短沟道金属-氧化物半导体场效应晶体管的散粒噪声模型

随着金属-氧化物半导体场效应晶体管(MOSFET)器件的尺寸进入到纳米量级,器件的噪声机理逐渐开始转变.传统的热噪声与漏源电流模型精度出现下降,散粒噪声成为器件噪声不可忽略的因素.本文通过求解能量平衡方程,推导了短沟道MOSFET器件的沟道电子温度和电子速度表达式,由此建立了漏源电流模型;基于漏源电流模型建立了适用于40 nm以下器件的散粒噪声模型和热噪声模型.研究了n型金属-氧化物半导体场效应晶体管(NMOSFET)器件在不同偏置电压下,器件尺寸对散粒噪声抑制因子和噪声机理的影响.研究表明:已有的热噪声模型与散粒噪声模型的精度随着器件尺寸的减小而下降,导致相应的散粒噪声抑制因子被高估.当NMOSFET器件的尺寸减小到10 nm时,器件的噪声需由热噪声与受抑制的散粒噪声共同表征.本文建立的短沟道器件散粒噪声模型可应用于纳米尺寸NMOSFET器件噪声性能的分析与建模.     

强反型区下纳米MOSFET的射频噪声机理分析

为了有效地表征纳米MOSFET强反型区下的射频噪声特性,研究了其噪声建模的方法。在分析45 nm MOSFET射频小信号等效电路参数提取结果的基础上,建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45 nm器件噪声机理的三个组成部分:本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时,还表明:45 nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声,并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。     

介观物理系统中的噪声

描述了介观物理系统中噪声的研究现况. 对热噪声和散粒噪声的物理起源做了详细介绍，热噪声是系统的能态占据数发生涨落引起的，而散粒噪声源于载流子传输的微粒特性. 还介绍了研究噪声的主要理论——散射理论，并给出了其在马鞍形半导体量子线和铁磁/绝缘体/半导体双异质结两种介观系统中的应用，指出了噪声研究的实际物理意义. 关键词： 介观物理 热噪声 散粒噪声 散射理论     

准弹道输运纳米MOSFET散粒噪声的抑制研究

目前研究准弹道输运纳米MOSFET散粒噪声的抑制时, 采取了完全不考虑其抑制, 或只强调抑制的存在而并未给出抑制公式的方式进行研究. 本文基于Navid模型推导了准弹道输运纳米MOSFET散粒噪声, 并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子. 在此基础上, 对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究. 两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合, 从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.     

10 nm金属氧化物半导体场效应晶体管中的热噪声特性分析

随着金属氧化物半导体场效应晶体管(MOSFET)器件等比例缩小至纳米级的较小尺寸,一方面导致的短沟道效应已严重影响热噪声;另一方面使栅、源、漏区及衬底区的热噪声占有比越来越高,而传统热噪声模型主要考虑较大尺寸器件的沟道热噪声,且其模型未考虑到沟道饱和区.本文针对小尺寸纳米级MOSFET器件,并根据器件结构特征和热噪声的基本特性,建立了10 nm器件的热噪声模型,该模型体现沟道区、衬底区及栅、源、漏区,同时考虑到沟道饱和区的热噪声.在模型的基础上,分析沟道热噪声、总热噪声随偏置参量及器件参数之间的关系,验证了沟道饱和区热噪声的存在,并与已有实验结果一致,所得结论有助于提高纳米级小尺寸MOSFET器件的工作效率、寿命及响应速度等.     

用电路噪声测量玻尔兹曼常量和电子电荷

设计并搭建热噪声和散粒噪声测试电路系统,利用锁相放大器,从极强的背景噪声中提取微弱待测电信号,输入参考信号实现频谱搬移测量法,测定了玻尔兹曼常量k和电子电荷e.该实验能够加深学生对电路噪声特性的理解,掌握锁相放大器技术和微弱信号测量方法.     

电子器件散粒噪声测试方法研究

本文分析了超导量子干涉器(SQUID)和超导-绝缘-超导(SIS)约瑟夫森结散粒噪声测试方法的应用局限性,提出了常规器件的散粒噪声测试方案.针对常规电子器件散粒噪声特性,研究了噪声测试基本条件,并建立了低温测试系统.通过采用双层屏蔽结构和超低噪声前置放大器,实现了较好的电磁干扰屏蔽和极低的背景噪声.在10 K温度下对常规二极管散粒噪声进行了测试,通过理论和测试结果对比分析,验证了测试系统的准确和可信性. 关键词： 散粒噪声 电子器件 噪声测试     

谐振式集成光学陀螺噪声分析与实验研究

针对目前谐振式集成光学陀螺(IORG)输出检测精度与其理论极限灵敏度存在两个数量级差别的情况,分析了IORG系统中存在的主要噪声源;搭建了基于单光路锁频和单光路输出的IORG噪声分离系统;分别对无光情况下信号检测系统中各部分的噪声以及陀螺静态频率锁定情况下各部分的噪声影响进行了测试与分析;得到了系统的噪声分布情况。实验结果表明:光路噪声以及包括探测器热噪声和散粒噪声的电路固有噪声为系统的主要噪声源。     

相干介观系统中散粒噪声的Monte Carlo模拟方法研究

根据电荷通过低温量子导体时具有的二项分布导致散粒噪声这一结论,结合Landauer电流公式的物理内涵建立了相干介观系统中的散粒噪声模型,并通过Monte Carlo模拟方法产生了散粒噪声时间序列.介观系统中散粒噪声的抑制来源于电子输运时的相关性,传输本征值双峰分布导致量子混沌腔和无序金属中的散粒噪声抑制.根据这两个结论,通过Monte Carlo模拟定性地分析了传输本征值分布与电子输运相关性之间的关系. 关键词： 散粒噪声 Landauer公式 介观系统     

铁磁-超导隧道结中的散粒噪声

考虑到铁磁层中的自旋极化效应与粗糙界面散射效应,利用散射理论,讨论铁磁超导隧道结中的散粒噪声.计算表明:磁交换作用可以抑制隧道结系统的平均电流与散粒噪声功率,而粗糙界面散射可以增强系统的平均电流与散粒噪声功率 关键词： 铁磁 超导 隧道结 散粒噪声     

Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET

Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows.(i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise.(ii) In the middle inversion region, it is almost full of shot noise.(iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.     

Magnetization noise in magnetoelectronic nanostructures

By scattering theory we show that spin current noise in normal electric conductors in contact with nanoscale ferromagnets increases the magnetization noise by means of a fluctuating spin-transfer torque. Johnson-Nyquist noise in the spin current is related to the increased Gilbert damping due to spin pumping, in accordance with the fluctuation-dissipation theorem. Spin current shot noise in the presence of an applied bias is the dominant contribution to the magnetization noise at low temperatures.     

纳米器件电流噪声的散射理论统一模型研究

传统散射理论在研究器件噪声特性时,并没有考虑非相干输运和库仑作用对散粒噪声的抑制,而在实际纳米器件中这两种效应不可忽略.本文基于散射区等效接触端模型推导了考虑上述两种效应的电流噪声散射理论统一模型,该模型适用于从相干输运到非相干输运的整个输运区,并同时考虑了泡利不相容原理和库仑作用对散粒噪声的抑制.本文也提出了一种基于统一模型的电流噪声数值模拟方法,该方法所得散射区特性与散射区等效接触端模型特性一致. 关键词： 电流噪声 散射理论 统一模型     

Performance of All-optical WDM Network in Presence of Four-wave Mixing, Optical Amplifier Noise, and Wavelength Converter Noise

The article investigates the effect of four-wave mixing (FWM), amplified spontaneous emission (ASE) noise, and wavelength converter noise on the performance of WDM all-optical networks. Analysis for the evaluation of probability of error has been carried out (a) when only thermal and shot noise are present; (b) when thermal, shot, FWM, and ASE noise are present; and (c) when thermal, shot, FWM, ASE, and wavelength converter noise are present. Numerical results are presented in the graphical forms for the practical values of parameters.     

纳米尺度金属-氧化物半导体场效应晶体管沟道热噪声模型

随着CMOS工艺的发展,热载流子效应对沟道热噪声的影响随着器件尺寸的降低而增大,传统热噪声模型未能准确表征沟道的热噪声.本文通过解能量平衡方程,得到电子温度表达式,并结合沟道漏电流表达式,建立了沟道热噪声模型.利用建立的电子温度表达式,该热噪声模型考虑了热载流子效应的影响,并且在计算热噪声的过程中考虑了电子温度对迁移率降低的影响以及温度梯度对热噪声的影响.通过分析与计算,结果显示,随着器件尺寸的减小,温度梯度对电子温度产生显著影响,使得热载流子效应的影响增大,热载流子效应对热噪声的增长作用超过了迁移率降低对热噪声的减小作用,最终导致热噪声增大.本文建立的沟道热噪声模型可应用于纳米尺寸金属-氧化物半导体场效应晶体管器件的噪声性能分析及建模.     

Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic transport. We predict that when the local thermal energy of the junction is larger than its lowest vibrational mode energy eV(c), the inelastic contribution to shot noise (conductance) increases (decreases) with bias as V (sqrt[V]). The corresponding Fano factor thus increases as sqrt[V]. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for V > V(c), is independent of bias. These predictions can be readily tested experimentally.     

Noise in a coupling electromagnetic detecting system for high frequency gravitational waves

This paper discusses the basic categories of noise in detecting high frequency gravitational waves in the microwave band (～0.1--10 GHz), which contain shot noise from the laser and the thermal radiation photons, thermal noise from statistical fluctuation of the thermal photons and fluctuation of the temperature, radiation press noise on the fractal membrane, the noise caused by the scattering of the Gaussian Beam (GB) in the detecting tube and noise in the microwave radiometers. The analysis shows that a reasonable signal-to-noise ratio may be achieved for a detecting device with the fixed power of GB (10⁵ W), only when the temperature of the environment is no more than T=1 K, and the optimal length of the microwave radiometers is about 0.3 m.     

Cryogenics and Einstein Telescope

The dominant noises which limit the present sensitivity of the gravitational wave detectors are the thermal noise of the suspended mirrors and the shot noise. For the third generation of gravitational wave detectors as the Einstein Telescope (ET), the reduction of the shot noise implies to increase the power stored in the detector at 1 MW level and, at the same time, to compensate the huge optic distortion due to induced thermal lensing. At low temperature it is possible to reduce both these effects. However, lowering the temperature of the test masses without injecting vibration noise from the cooling system is a technological challenge. We review here the thermal noise impact on the ultimate ET sensitivity limit and we discuss possible cryogenic configurations to cool the mirror.