Interaction of Magnetization Centers of Different Signs as the Cause of the Nonmonotonic Field Dependence of the Domain Wall Velocity in Synthetic Pt/Co/Ir/Co/Pt Ferrimagnets

The purpose of the work is to find the dependence of growth rate of magnetization centers of various types on their surrounding by other nucleation centers in a synthetic Pt/Co/Ir/Co/Pt ferrimagnet with perpendicular magnetic anisotropy. The following four types of nucleation centers exist in a sample with two ferromagnetic layers of different thicknesses: P+ centers correspond to the regions where the magnetizations of the thick and thin Co layers are directed along an applied field (↑↑); P– centers are the regions where the magnetizations of the layers are opposite to an applied field (↓↓); and AP+ and AP– centers correspond to the regions where the magnetizations of the thick and thin Co layers are opposite to each other and the total magnetic moment is along (↑↓) or opposite to (↓↑) an applied field, respectively. P– nucleation centers are found to be surrounded by AP+ regions in any field and exhibit a monotonic field dependence of their boundary. The field dependence of the growth rate of AP– nucleation centers is nonmonotonic since, as the field increases, they are surrounded by AP+ nucleation centers, AP+ and P– regions, and only P– nucleation centers in strong fields.     

Four quasi-particle level at 2256 keV in182Re

In-beam nuclear spectroscopic studies of¹⁸²Re, following the reaction¹⁸¹Ta(α, 3n)¹⁸²Re have been made using gamma-ray and internal conversion electron techniques.K-conversion coefficients for several transitions have been measured and the multi-polarities of the various transitions assigned. In particular, the spin and parity of the four-quasi-particle isomeric level at 2256 keV were determined to be 16⁻. Theg-factor of this level has been measured to beg = 0·32 ± 0·05. On the basis of theg-factor and the decay pattern of this level, a configuration {v9/2⁺ [624↑]v7/2⁻ [514↓]v7/2⁻ [503↑]π9/2⁻ [514↑]} _k ^x = 16⁻ has been assigned to this level. The nature of the retardation of the gamma transitions deexciting this level is discussed. It is argued that the measured retardation factors can be explained if the nucleus has a triaxial shape.     

Addition and spin exchange rate constants by longitudinal field μSR: The Mu+NO reaction

The addition reaction Mu+NO+M→MuNO+M and the spin exchange reaction Mu(↑) +MO(↓)→Mu(↓)+NO(↑) have been measured by longitudinal field μSR at room temperature in the presence of up to 58 atm of N₂ as inert collider. The pressure dependence of the longitudinal relaxation rate due to the addition reaction (λ_c) demostrates that the system is still in the low pressure regime in this pressure range. The corresponding termolecular rate constant has been determined ask _0,Mu =(1.10±0.25)×10⁻³² cm⁶ molecules⁻² s⁻¹, almost 4 times smaller than the corresponding H atom reactionk _0,H=3.90×10⁻³² cm⁶ molecules⁻² s⁻¹ [I.M. Campbell et al., J. Chem. Soc. Faraday Trans. 1.71 (1975) 2097]. The average value of the spin exchange rate constants in the 2.5–58 atm pressure range,k _SE=(3.16±0.06)×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, is in good agreement with previous values obtained by transverse field μSR [D.G. Fleming et al., J. Chem. Phys. 73 (1980) 2751].     

Magneto transport on the surface of a topological insulator spin valve

The effects of the magnetization on the transport properties of a ferromagnet/barrier/ferromagnet spin valve fabricated with a topological insulator are studied. We consider two types of junctions, (i) an F₁/normal barrier (NB)/F₂ junction and (ii) an F₁/magnetic barrier (FB)/F₂ junction. The junctions in both cases lie in the xy-plane with the magnetizations in both ferromagnetic regions, F₁ and F₂ aligned in the z-direction. The charge carriers in the topological insulator have a Dirac like energy spectrum of a massive relativistic particle with the magnetization M playing the role of the mass. The gap opening is a special magneto feature of topological insulators. In an anti parallel alignment of the two magnetizations, the mass of the carriers is negative in the region where M is in the negative direction. The negative mass leads the behaviors of the magneto transport properties and the tunneling magneto resistance of these junctions to be quite different from those of graphene-based spin values.     

Influence of local spin polarization to the Kondo effect

We use the spin non-degenerate single impurity Anderson model to investigate the influence of the local spin polarization to the Kondo effect. By using the Schrieffer-Wolff transformation, we obtain a generalized s-d exchange Hamiltonian, which describes the interaction between a polarized local spin and conduction electrons. In this case, the singlet is no longer an eigenstate as shown by variational calculations where the splitting of the local energy Δ = ɛ _d↑ − ɛ _d↓ can be arbitrarily small. The local spin polarization generates the instability of the singlet ground state of the S = 1/2 s-d exchange model.      

Magnetic reconstructions at the surface of the B2 FeV alloy

We present an ab initio study of the magnetic surface reconstructions of the B2 FeV alloy using a self-consistent tight-binding linearized muffin tin orbital method developed in the atomic spheres approximation. For (001) and (111), the surface reconstruction stabilizes configurations unstable in the bulk alloy. When Fe is at the (001) surface, a c(2×2) in-plane antiferromagnetic order is found to be the ground state with magnetic moments of -2.32 and 2.27. A p(1×1) ↓ ferromagnetic order is displayed in case of V toplayer with a magnetic moment of -1.83. At the (111) surface, we obtain for Fe toplayer two solutions p(1×1)↑ and p(2×1). The configuration p(1×1)↑ is found to be the ground state with a magnetic moment per atom of 2.34. For V toplayer, only the p(1×1) ↓ solution is obtained with a moment of -0.84. In all cases, the Fe-V coupling is always antiparallel like in the bulk. Our results are discussed and compared to experiments. Received 11 August 2000 and Received in final form 8 June 2001     

Spin transistor in the EuO:Fe/GaAs contact

Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact.     

The Sr content influence on the positive magnetoresistance in La1-xSrxMnO3/Si heterojunctions

<正>We fabricated La_(1-x)Sr_xMnO_3/Si(LSMO/Si) heterojunctions with different Sr doping concentrations(x = 0.1, 0.2,0.3) in LSMO and studied the Sr content influence on magnetoresistance(MR) ratio.The hetero junctions show positive MR and high sensitivity of MR ratio in a low applied magnetic field.The MR ratio is dependent on Sr content and the low Sr doping in LSMO causes a large positive MR in LSMO/Si junctions.The MR ratio for 0.1 Sr doping in the LSMO/Si heterostructure is 116%in 100 Oe(1 Oe=79.5775 A/m) at 210 K.The mechanism for the positive MR dependence on the doping density is considered to be the competition between the tunneling rate of electrons in e_g~1↑to t_(2g)↓band and that to e_g~2↑band at the interface region of LSMO.The experimental results are in agreement with those observed in La_(0.9)Sr_(0.1)MnO_3/SrNb_(0.01)Ti_(0.99)O_3 p-n junction.The results indicate that choosing low doping concentration to improve the low field sensitivity of the heterojunction devices is a very efficacious method.     

Even harmonics of AC susceptibility in some sintered pellets of high temperature superconductors

The real (χ′ _n) and imaginary (χ″ _n) parts of even harmonic susceptibility (n⩽6) are measured as a function of external DC field (H _dc) in the field increasing (H↑) and decreasing (H↑) cycle. Hysteresis is observed betweenH↑ andH↓ cycles. In theH↓ cycle, at a field,H _comp=4·2G, bothχ′ andχ″ of all the even harmonics vanish indicating a true cancellation of fields in the intergrain region (H _eff≈0) caused by the balance betweenH _dc and the remanent magnetization of the grains. The position of the extrema and the zero of the various harmonics undergo a shift proportional to the remanent magnetization of the grains at that particular field.     

LargeP T P−P collisions to probe the gluonic and sea spin distribution in the proton

We parametrise the polarised gluon and sea distribution functions incorporating the interpretation of the EMC experiment that, due to the axial anomaly the observed quark contribution to proton spin at Q ²>=10.7 GeV². Typical processes to isolate the gluonic and sea content of the proton studied here are the largeP _T direct photon production processes (a) using single polarized protonPPX and (b) polarized beam and target protonPPX. In both the above process the dominant contribution comes from the Compton subprocess and so can be used as a clean probe of the gluonic content of the proton. LargeP _T muon pair production PP(^+–)X are also studied and we find that the annihilation subprocess dominates, but not much larger than the Compton subprocess and so may not be a clean probe of the sea content of the proton. The effect of two loop corrections to the parametrisation and asymmetries are also considered, and are found to be negligible.     

Optical studies of phase transitions in the (NH4)3VO2F4 crystal

(NH₄)₃VO₂F₄ crystals were grown, and polarization-optical studies and measurements of birefringence were conducted on crystal plates of various cuts over a wide temperature range. Phase transitions were detected at temperatures T _1↑ = 417 K, T _3↑ = 211 K, and T _4↑ = 205 K (on heating) and at T _1↓ = 413 K, T _3↓ = 210 K, and T _4↓ = 200 K (on cooling). The transitions are accompanied by anomalies of the birefringence and by twinning. The sequence of changes in the phase symmetry is assumed to be as follows: cubic Fm m ↔ orthorhombic Immm (I222₁) ↔ monoclinic 112/m) ↔ triclinic P . Near temperatures T ₂ ≈ 240–250 K, an additional anomaly of the birefringence is observed, with the crystal retaining the orthorhombic symmetry. Original Russian Text ? S.V. Mel’nikova, A G. Kocharova, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 562–564.     

Spin-dependent transport of holes in microstructures periodically modulated by diluted magnetic semiconductor sections

We study spin transport of holes through microstructures modulated periodically by diluted magnetic semiconductor (DMS) sections, stubless or stubbed. The stubs are symmetric or asymmetric and the magnetizations of consecutive DMS sections are parallel or antiparallel. The transmission coefficients of holes with spin up (T⁺) or down (T^-) are drastically different since the spins feel different potential profiles in the DMS sections. As a result, nearly square-wave patterns, or wide plateaus and oscillations, can be obtained for the transmission and the spin polarization as functions of the incident energy or of various parameters of the periodically repeated unit. Results for simple and composite units with and without deviations from perfect periodicity are reported. Some of the structures considered exhibit a strong spin-filtering behavior.     

Radiation-induced conductivity of alkali halide crystals in strong electric fields under X-ray and photoexcitation

A study is undertaken into radiation-induced conductivity of alkali halide crystals under X-ray excitation and sequential excitation with X-ray and laser pulses within the absorption band of F-and F ⁻-centers. The basic conduction parameters (concentration and lifetime of carriers upon X-ray and photoexcitation) are estimated. The possible processes responsible for the nonlinearity of the current-voltage characteristics are discussed. It is shown that an increase in the conductivity in strong electric fields may be due to a decrease in the spatial localization of electrons in the conduction band of the insulator.     

Current-induced spin injection and surface torque in ferromagnetic metallic junctions

The joint influence of two current-induced effects, namely, longitudinal nonequilibrium spin injection and surface torque, on spin-valve-type ferromagnetic metallic junctions is considered theoretically. The current flows normally to layer boundaries. The analysis is based on solving a system of coupled equations of motion for mobile electron and lattice magnetizations. The boundary conditions for the equations of motion are derived from the continuity condition for the total magnetization flux in these subsystems. A dispersion relation is derived for spin wave fluctuations depending on the current through the junction. The fluctuations become unstable at currents exceeding some threshold value (usually, 10⁶?3 × 10⁷ A/cm²). The joint action of longitudinal spin injection and torque lowers the instability threshold. Current-induced spin injection decreases spin wave frequencies near the threshold and can strengthen magnetization pinning at the injecting contact.     

Normal state of highly polarized Fermi gases: The bound state

We consider a highly polarized Fermi gas with a single ↓ atom within a Fermi sea of ↑ atoms. We extend a preceding many-body analysis to the case where a bound state is formed between the ↓ atom and an ↑ atom.     

First-principles electronic-structure calculation on the spin distribution and the half-metallic properties of the mixed valence iron compound Ba2F2Fe1.5S3

The first principles within the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) approach were applied to study the new mixed valence compound Ba₂F₂Fe_1.5S₃. The density of states, the electronic band structure and the spin magnetic moment are calculated. The calculations reveal that the compound has an antiferromagnetic interaction between the Fe^III and Fe^II ions arising from the bridging S atoms, which validate the experimental assumptions that there is a low-dimensional antiferromagnetic interaction in Ba₂F₂Fe_1.5S₃. The spin magnetic moment mainly comes from the Fe^III and Fe^II ions with smaller contribution from S anion. By analysis of the band structure, we find that the compound has half-metallic property.     

Electronic correlation effects on the properties of an half-filled octahedron cluster in a magnetic field

The present study focuses on electronic correlation effects on magnetic energy, the spin-spin correlation function of an octahedron cluster in the (3↑, 3 ↓) electronic configuration threaded by a magnetic field. Some other spin configurations are also discussed and various field directions are considered. An accurate diagonalisation technique has been used to solve the Hubbard Hamiltonian. A result is analysed on a linear energy stabilisation at low magnetic flux. Moreover, two types of antiferromagnetic transition versus the flux occurring for a correlation term larger than a critical one have been observed, i.e. the likelihood of a charge excitation before the antiferromagnetic transition. Finally, a comparison between the results obtained from the exact diagonalisation and the Gutzwiller method has been carried out, leading to a suggested modification of the Gutzwiller approach in order to improve it. Received 23 June 1999 and Received in final form 28 July 2000     

Application of Boltzmann Equation on Spin Diffusion of Ferromagnetic Superfluid <Superscript>3</Superscript>He: Near Critical Temperature

Different scattering processes of quasiparticles containing a binary process, a coalescence process and a decay process in transition probabilities are taken into account. In the meantime, interaction between Bogoliubov quasiparticles as well as that between normal and superfluid components (spin up-spin down quasiparticles) of ferromagnetic superfluid ³He-A ₁ are considered. Pfitzner procedure is used in the calculation of triplet and singlet quasiparticle scattering amplitude existing in transition probabilities of the collision integral of standard Boltzmann equation at melting pressure. Pfitzner procedure is extended beyond s-p approximation by adding higher angular momentum components. Then, using the results of Boltzmann equation and considering smallness of the gap close to T _c↑, the change of the spin diffusion coefficients tensor of the A ₁-phase of superfluid ³He close to critical temperature and melting pressure is calculated. Temperature dependence of the spin diffusion coefficient change, i.e., δD _xyxy /D⌈=(3/2)(δD _xzxz /D)⌉, is −0.71(1−(T/T _c↑))^1/2. It is also shown that interaction between normal and Bogoliubov quasiparticles (normal-superfluid components interaction) is very important to transport properties such as spin diffusion close to critical temperature. Furthermore, using s-p approximation, the prefactor of δD _xyxy /D is plotted in terms of pressure; hence, the pressure dependence of δD _xyxy /D is also determined.     

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors

According to density functional theory （DFT） using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy （Vo） in a （Ti,Co）06 distorted octahedron on the spin density and magnetic properties of Co-doped rutile Ti02 dilute magnetic semiconductors. Our calculations suggest that the Vo location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the Vo is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6（t3g↑, t23g ↓） without any magnetic moment. However, if the Vo is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of Vo. Some positive spin polarization is induced around the adjacent O ions.     

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

A novel high-voltage light punch-through(LPT) carrier stored trench bipolar transistor(CSTBT) with buried p-layer(BP) is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored(N-CS) layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage(BV) significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer(NN CS) to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop(Vce(sat)) can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 1015 cm-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.