Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors

According to density functional theory （DFT） using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy （Vo） in a （Ti,Co）06 distorted octahedron on the spin density and magnetic properties of Co-doped rutile Ti02 dilute magnetic semiconductors. Our calculations suggest that the Vo location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the Vo is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6（t3g↑, t23g ↓） without any magnetic moment. However, if the Vo is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of Vo. Some positive spin polarization is induced around the adjacent O ions.     

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO₂ dilute magnetic semiconductors

According to density functional theory (DFT) using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy (VO) in a (Ti,Co)O 6 distorted octahedron on the spin density and magnetic properties of Co-doped rutile TiO2 dilute magnetic semiconductors. Our calculations suggest that the V O location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the V O is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6 (t3 2g ↑, t 3 2g ↓) without any magnetic moment. However, if the V O is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of V O . Some positive spin polarization is induced around the adjacent O ions.     

用从头算方法研究GeCl2分子的非谐振力场和光谱常数

用从头算方法的MP2和CCSD（T）方法结合cc-pVTZ基组计算了二氯化锗同位素（⁷⁰GeCl₂、⁷²GeCl₂和⁷⁶GeCl₂）分子的平衡结构、光谱常数和非谐振力场.二氯化锗的几何结构、转动常数、振转相互作用常数、谐频、非谐振常数、四次和六次离心畸变常数、三次和四次力常数的计算结果与实验结果符合较好,二氯化锗分子的同位素效应较小,可能的原因是Ge同位素的质量变化相对较小.两种方法计算的结果均与实验结果符合,但CCSD（T）方法比MP2计算结果的偏差稍大一些,可能的原因是CCSD（T）方法在描述过共价Cl原子的电子相关时不够充分.     

氧空位对Co掺杂TiO2稀磁半导体中杂质 分布和磁交换的影响

本文使用基于密度泛函理论的第一性原理方法研究了Co掺杂TiO₂稀磁半导体中氧空位对体系能量和磁性的影响. 通过对总能量的计算发现当引入氧空位后近邻杂质体系能量高于均匀掺杂体系, 同时氧空位易在Co近邻位置富集. 进而发现氧空位的存在及其占位可以影响Co离子间的磁交换, 近邻Co离子体系下氧空位的引入使Co离子间的铁磁耦合减弱; 非近邻Co离子体系下, 底面氧空位使Co离子间呈反铁磁耦合而顶点氧空位使Co离子间呈铁磁耦合. 总之, 氧空位的存在对Co掺杂TiO₂材料的能量及磁性都有较大影响.     

双层钙钛矿(La_(1-x)Gd_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.05)的相分离

采用传统固相反应法制备(La1-xGdx)4/3Sr5/3Mn2O7(x=0,0.05)多晶样品,并通过测量样品的磁化强度与温度的变化曲线(M-T曲线)、电子自旋共振谱(ESR谱)和电阻率与温度的变化曲线(ρ-T曲线),研究了x=0和x=0.05样品的相分离现象.研究结果表明,两样品在低温部分出现了反铁磁与铁磁相互竞争的现象,体现出团簇自旋玻璃态的特征.x=0和x=0.05样品分别在125—375 K和100—375 K范围内观察到类Griffiths相,同时发现掺杂使得三维铁磁有序温度(T3Dc0≈125 K和T3Dc1≈100 K)降低,而对类Griffiths温度(TG≈375 K)没有明显影响.在TG温度以上两样品均表现出纯顺磁特性.其电特性表明,x=0样品在整个测量范围内出现两次绝缘-金属转变,这是由钙钛矿锰氧化物共生现象所致.而x=0.05样品只出现一次绝缘-金属转变,表明掺杂能抑制共生现象的产生.通过对ρ-T曲线的拟合发现两样品在高温部分的导电方式基本都遵循三维变程跳跃的导电方式.     

An electron spin resonance study of Eu doping effect in La_(4/3)Sr_(5/3)Mn_2O_7 single crystal

The effect of Eu3+ion doping in the La sites of single-crystal La4/3Sr5/3Mn2O7was investigated. Electron spin resonance(ESR) was applied to La4/3Sr5/3Mn2O7and(La0.8Eu0.2)4/3Sr5/3Mn2O7single crystals. A phase separation and phase transitions were observed from the ESR spectra data. Between 350 K and 300 K, both paramagnetic resonance(PMR)and anisotropic ferromagnetic resonance(FMR) lines were observed in the ab plane and the c axis direction, suggesting a coexistence of the paramagnetic(PM) phase and the ferromagnetic(FM) phase. The magnetization measurement reveals a spin-glass-like behavior in single-crystal(La0.8Eu0.2)4/3Sr5/3Mn2O7below the temperature of spin freezing Tf(～ 29.5 K).