非对称磁镜场电子回旋共振氧等离子体刻蚀化学气相沉积金刚石膜

分别应用郎缪尔双探针和离子灵敏探针对非对称磁镜场电子回旋共振氧等离子体的电子参数、空间分布和离子参数进行了测量,分析了气压对等离子体参数及空间分布的影响。利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀,并研究了刻蚀机理。结果表明:电子温度为5~10 eV,离子温度为1 eV左右,而等离子体数密度在1010cm-3数量级。随气压的升高,电子和离子温度降低,而电子数密度先增大后减小。在低气压下等离子体数密度空间分布更均匀,优化的刻蚀气压为0.1 Pa。刻蚀过程中,离子的回旋运动特性得到了加强,有利于平行于金刚石膜表面的刻蚀,有效地保护了金刚石膜的晶界和缺陷。     

氧回旋离子束刻蚀化学气相沉积金刚石膜

利用非对称磁镜场电子回旋共振等离子体产生的氧回旋离子束刻蚀了化学气相沉积金刚石膜,研究了工作气压和磁电加热电压对金刚石样品附近的离子温度和密度的影响,并分析了金刚石膜的刻蚀和机械抛光效果。结果表明:当工作气压为0.03 Pa,磁电加热电压为200 V时,离子温度和密度最大,分别为7.38 eV和 23.81010 cm-3 。在此优化条件下刻蚀金刚石膜4 h后,其表面粗糙度由刻蚀前的3.525 m降为2.512 m,机械抛光15 min后,表面粗糙度降低为0.517 m,即金刚石膜经离子束刻蚀后可显著提高机械抛光效率。     

Langmuir探针诊断低压氢等离子体电子密度与温度

为研究实验参数对螺旋波诱导的低压氢等离子体状态的影响,用Langmuir探针对等离子体伏安特性曲线进行了原位诊断,采用双曲正切函数的指数变换模型拟合曲线,根据Druyvesteyn方法得到状态参数电子密度、有效电子温度和电子能量几率函数,分析了它们随实验参数的变化规律。结果表明:射频输入功率、气压和约束磁场对等离子体状态有较大影响。随着射频射入功率增大,放电模式发生转变,电子密度跳跃增长;随着气压增大,电子密度先增大后减小,1.5 Pa为最佳电离气压,随约束磁场的增强呈线性增长;有效电子温度随功率和气压的增大而下降,随约束磁场的增强线性降低,电子能量几率函数曲线峰位和高能部分都向低能移动,与有效电子温度变化规律吻合。     

离子灵敏探针及其在磁镜装置中的应用

使用离子灵敏探针(ISP)对MM-2U简单磁镜装置中等离子体的离子温度和电子温度进行了测量。描述了这种静电离子探针的工作原理及主要的设计参数。对从探针特性曲线得到的离子温度及密度也予以讨论。     

p型半导体金刚石膜的磁阻效应

在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O₂等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词： 金刚石膜 异质外延 磁阻效应 电导率     

圆筒电极对离子磁电加热的影响

高效的磁电加热不仅能够提高电子回旋共振(ECR)等离子体的离子温度,还能改善离子的径向和轴向分布,促进ECR等离子体在化学气相沉积金刚石膜刻蚀中的应用.将磁电加热系统中的圆环电极改进为圆筒电极,研究了圆筒电极对离子磁电加热的影响,对比了圆筒和圆环电极加热离子的区别.结果表明:在同一阳极偏压下,圆筒比圆环电极更有利于提高离子温度,圆筒电极加热时各径向位置的离子温度升高的幅度较大,其中圆筒电极内部的离子温度径向分布差异较大,而圆筒下游的离子温度径向分布比较均匀;磁电加热对离子密度的影响很小;采用圆筒电极加热时,有利于离子向轴向下游的输运,改善了离子的轴向均匀性.     

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采用Langmuir探针法结合发射光谱法对螺旋波诱导的低压氢等离子体进行诊断,根据Druyvesteyn 方法和日冕模型分析电子能量几率函数(EEPF)、有效电子温度(Teff)、电子密度(ne)及激发态氢原子密度(nH*)随实验参数的变化规律.结果表明:随射频功率(Prf)、气压(p)和约束磁场(B)的增大,EEPF峰位由高能向低能移动,Teff 下降;当Prf从25W增大至35W左右时,ne发生跳跃增长,而nH*始终随Prf增大线性增长;随p增大,ne和nH*都呈现先增加后减小的变化规律;随B增强,ne线性增长,而nH*先增大后减小.     

ECR等离子体的磁电加热研究

在ECR等离子体装置上进行了磁电加热研究,利用离子灵敏探针(ISP)测量了磁电加热前后离子温度的变化,研究了电极环偏压、磁场强度、气压等参数对磁电加热过程以及加热效率的影响.结果表明:等离子体的整体加热是通过离子在电极环鞘层中的磁电加热及被加热的离子沿径向的输运来完成的.轴心处离子温度随电极环偏压的升高呈非线性增加.磁电加热效率随偏压的增大而增大,在电极环偏压为1000 V时,磁电加热效率为2%-2.5%,ECR等离子体中的离子温度能够提高20 eV以上.磁场强度在磁电加热过程中对离子的限制和加热起到重要作用,当磁场强度在6.3×10^-2-8.7×10^-2T之间变化时,磁电加热的效率随磁场强度的增大而增大.气压在0.02-0.8 Pa范围内,磁电加热的效率随气压的减小而增大. 关键词： ECR等离子体 磁电加热 离子温度     

基于数据采集系统的等离子体Langmuir探针诊断实验

 采用Langmuir探针、扫描电源和微机数据采集系统相结合,实时获得了等离子体的伏安特性曲线及参数计算结果。本数据采集系统是一个虚拟仪器系统,包括数据采集、分析测试和结果显示三部分,用来采集Langmuir探针的电流电压信号,并加以分析处理。整个测试过程非常快,可以在ms级的时间内完成,相对于手动测试,基于数据采集系统的Langmuir探针诊断实验得到的数据更为精确,电压测试范围更大,并能去除因为等离子体电位漂移而产生的曲线失真。根据所得的伏安曲线,讨论了等离子体的电子温度,离子密度等参数的计算方法。进一步研究发现电子温度随真空室气压增大而变小,离子密度随气压增大而变大。     

电子回旋共振等离子体特性及其对生长氮化镓晶膜的影响

为了解并优化在电子回旋共振等离子体辅助化学汽相沉积GaN晶膜的工艺研究中的等离子体特性,利用朗缪尔探针及法拉第筒系统地测量了离子密度(N_i)、等离子体势(V_p)、电子温度(T_e)及离子流强(J_i)等多个等离子体参量随微波功率(P_w)及沉膜室气压(p)变化的关系.给出了在P_w＝850W,p＝0.22Pa时,上述等离子体参量的轴向及径向分布.GaN晶膜的生长速率、电学及晶体学性能 关键词：     

基于双向偏振态激光诱导荧光方法的离子速度分布函数测量

为了评估利用发散磁场构型双电层效应的紧凑式螺旋波等离子体推力器的离子加速效果,探索了一种双向偏振态激光诱导荧光测量方法来对螺旋波等离子体源近出口端的离子速度分布函数进行测量。实验中采用Ar作为螺旋波等离子体源工质,中心波长为611.662 nm的激光以轴向方式注入等离子体,以激励一价Ar离子获得波长为461.086 nm的诱导荧光光谱。为了消除磁化等离子体中逆塞曼效应对激光诱导荧光光谱带来的分裂影响,通过四分之一波片将入射激光分别调制为左旋和右旋圆偏振态,并对其诱导光谱进行了分别测量,结果发现不同磁场强度下两次测量结果的偏移值与理论高度吻合,证明了双向偏振态激光诱导荧光测量方法的理论可行性。进一步,采用高斯型滤波器反卷积算法从测量光谱中去除自然展宽和能量饱和效应,再通过对两次相反偏振态测量结果进行平移处理消除逆塞曼效应,从而分离得到实际的多普勒效应。测量了射频能量600 W,不同轴向位置、磁场大小以及气体压力下的螺旋波Ar等离子体激光诱导荧光光谱,结果表明在该实验条件下离子并没有因双电层效应而达到期望值的加速效果,离子速度的形成可能只是一种磁约束作用下的双极电场所导致,并不能产生好的推力性能。     

高通鸟笼线圈激发螺旋波等离子体特性研究

研制了高通鸟笼线圈,使用氩气作为工质气体对射频天线的工作性能进行了初步评估。利用COMSOL5.4模拟出了鸟笼天线在13.56MHz的工作频率下,电场和磁场呈线性极化分布。对鸟笼线圈进行了电路结构解剖,推导出了其谐振频率计算公式。利用热耦合红外测温仪测试了正常工作状态下的鸟笼线圈外表温度明显低于传统射频天线,电容器最高温度仅65.8°。使用光谱仪对螺旋波等离子体放电光谱特性进行诊断。通过朗缪尔探针诊断了不同压强和磁场强度下螺旋波等离子体密度,在1.0Pa、600Gs、射频功率700W条件下等离子体密度达到1.62×10¹⁸m^-3。诊断了正向功率和反向功率对应的等离子体密度,其与磁滞现象变化趋势雷同。测试了螺旋波等离子体的径向密度分布,其在轴心处密度达到最高。探究了无磁场条件下等离子体特性,其密度值不会发生大幅度跃迁,纵向磁场是引发螺旋波等离子体放电的关键因素,低压条件下有利于得到更低的电子温度,最低达到2.67eV。表明鸟笼线圈低热耗、高馈入的特性使其在激发大体积的高密度螺旋波等离子体方面具有明显优势,可以投入到下一阶段氢气螺旋波等离子体的激...     

Characteristics of VHF H2 Plasma Produced at High Pressure

A VHF H₂ plasma was produced with the multi rod electrode at high pressure and the plasma parameters were measured as a function of pressure for different VHF powers at 60 MHz. It was found that when the pressure is increased, the ion saturation current peaks at certain pressure and finally decreases at high pressures, while the electron temperature is around 10 eV. The wall potential at high pressure was lower than the values estimated from the electron temperature using the probe theory. Furthermore, the anomalous reduction of the electron saturation current was observed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

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在非对称磁镜场微波ECR等离子体中引入了磁电加热系统,研究了电极环大小、轴向位置以及双环加热对离子温度的影响.结果表明,大小合适的电极环能有效提高离子的加热温度,且最优电极环尺寸主要取决于离子回旋半径.电极环轴向位置的选择主要与磁镜场位形有关,将电极环置于磁镜场中部的弱磁场位置时最有利于离子温度的提高.采用双电极环加热能进一步提高离子温度,并且其加热效果是单环加热的两倍.     

Energy transport in plasma etching of nanoporous dielectric materials

A Monte Carlo routine was developed to simulate the motion and energetics of ions in the pores of a xerogel material under plasma etching conditions. The simulation included the effects of an applied electric field and input conditions for the pore as a function of pressure and applied voltage in the plasma reactor. We were interested in the ion energy in a pore, the ion penetration depth and the effect of ion energy on etching.At low pressures the nanoporous material etches faster than dense silicon dioxide. This is to be expected given the decrease in density and increase in surface area that arises due to the porosity. However, as the pressure is increased, the etch rate decreases dramatically and, eventually, the dense oxide may etch faster than the porous material. CHF₃ was used as the etchant gas and, for this gas, we believe this behavior to be controlled by the ion energy and energy transport in the pores of the xerogel material. As the pressure in the plasma reactor is increased, the incoming ions switch over from etching activation to polymerisation activation. This agrees with the observed crossover in etch rate seen experimentally and with the cessation in etching as pressure is increased. The switch is affected by pore roughness and correlates with the average ion energy in the pore.     

Two-dimensional direct simulation Monte Carlo (DSMC) of reactiveneutral and ion flow in a high density plasma reactor

We present a two dimensional direct simulation Monte Carlo (DSMC) study of the rarefied reactive flow of neutrals and ions in a low pressure inductively coupled plasma reactor. The spatially-dependent rate coefficients of electron impact reactions and the electrostatic field were obtained from a fluid plasma simulation. Neutral and ion etching of polysilicon with chlorine gas was studied with emphasis on the reaction uniformity along the wafer. Substantial gradients in total gas density were observed across the reactor invalidating the commonly made assumption of constant gas density. The flow was nonequilibrium with differences in the species translational temperatures, and 100 K temperature jumps near the walls. When etching was limited by ions the etch rate was highest at the wafer center. When etching was limited by neutrals, the etch rate was highest at the wafer edge. In such case, the etch uniformity changed significantly depending on the reactivity of the ring surrounding the wafer. The ion angular distribution was several degrees off normal and it was different at the wafer edge compared to the rest of the wafer     

Coaxial Discharge and Transverse Magnetic Field

The study deals with the effect of an applied transverse magnetic field on the dynamics and parameters of the focused and expanded plasma in a coaxial discharge. The experimental results were found with a 3 kJ Plasma focus device of a Mather geometry. The discharge takes place in hydrogen gas with base pressure of 0.5 Torr. The experiments are conducted with a 10 kV bank voltage, which corresponds to 100 kA peak discharge current with rise time 8 μs. Helmholtz magnetic coils are placed outside the expansions chamber to produce a transverse magnetic field with intensity 280 G perpendicular to the plasma expanded from the coaxial electrodes. The investigations have shown that the plasma flow along the expansion chamber axis is restricted when applying the externally transverse magnetic field and the maximum axial velocity of the expanded plasma is decreased by 33%. X-ray probe has been used to measure the focused plasma electron temperature (T_e). The experimental results and the calculations showed that T_e is decreased from 2.2 keV to 800 eV with the application of a transverse magnetic field. The expanded plasma electron temperature and density have been measured by an electric double probe, the results cleared that the expanded plasma electron temperature is decreased by 2.6 times while its density is increased by 9 times, when a transverse magnetic field is applied.     

Electrostatic Probes for Studying Transport Properties in Tokamak Plasmas

Electrostatic probes for measuring the boundary plasma in tokamaks are reviewed and presented. Transport properties in JFT‐2, the ion temperature and the magnetic surface in JFT‐2M and floating potential fluctuations during the strong additional heating in JT‐60 are measured by several types of electrostatic probe the above‐mentioned purposes. The Langmuir probe including the double probe is applied to measure the spatial profile of boundary plasma in JFT‐2. The ion sensitive probe, the rotating cylindrical double probe, the asymmetric double probe and the differential double probe are applied to measure the ion temperature and magnetic surface in JFT‐2M. The reciprocating Langmuir probe applied to JFT‐2M observes the potential and density fluctuations and a new type probe is proposed for the quick diagnostic of core hot plasmas as a development of this probe. The fluctuation observed in JT‐60 is identified to be the ion cyclotron instability of the hot plasma caused by the strong anisotropy of the ion distribution function (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

外加磁场微波等离子推力器内流场数值模拟

为了提高微波等离子推力器性能，改善等离子体对电磁波能量的吸收状况，提高核心区温度，提出外加磁场的方案，并对热等离子体进行了数值模拟.假设局域热平衡条件，采用Navier-Stokes，Maxwell和Saha方程，利用压力修正的半隐格式和时域有限差分求解方法，建立了径向磁镜场下推力器内等离子体流场的数值计算模型.数值模拟结果表明：外加磁场后的磁感应强度小于0.5 T时，推力器内热等离子体核心区最高温度随磁感应强度的增加而迅速提高.外加磁场后的磁感应强度大于0.5 T时，核心区最高温度随磁感应强度的增加而缓慢提高.磁感应强度为0.5 T时，热等离子体核心区最高温度与不加磁场相比提高了24%.外加磁场对等离子体流场速度分布影响不大. 关键词： 等离子体模拟 等离子体相互作用 等离子体流动