反向衬底偏压下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生电流特性研究

研究了反向衬底偏压V_B下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生(GMG)电流I_GMG特性, 发现I_GMG曲线的上升沿与下降沿随着|V_B|的增大向右漂移. 基于实验和理论模型分析, 得出了V_B与这种漂移之间的物理作用机制, 漂移现象的产生归因于衬底偏压V_B 调节了表面电势φ_s在栅电压V_G 中的占有比重: |V_B|增大时相同V_G下φ_s会变小, φ_s 的变化继而引发上升沿产生率因子g_r减小以及下降沿产生率因子g_f增大. 进一步发现I_GMG 上升沿与下降沿的最大跨导G_MR, G_MF 在对数坐标系下与V_B成线性关系, 并且随着|V_B|增加而增大. 由于漏电压V_D在I_GMG 上升沿与下降沿中的作用不同, 三种V_D下G_MR-V_B曲线重合而G_MF-V_B曲线则产生差异. 增大V_D 会增强g_f 随V_G的变化, 因此使得给定V_B 下的G_MF变大. 同时这却导致了更大V_D下G_MF-V_B 曲线变化的趋势减缓, 随着V_D从0.2 V变为0.6 V, 曲线的斜率s从0.09减小到0.03. 关键词： 产生电流 表面势 衬底偏压 N沟道金属氧化物半导体场效应晶体管     

不同堆砌层数煤系石墨的拉曼光谱表征及其表面石墨化均匀程度

采用多激发波长（325,405,514,633和785 nm）以及显微拉曼面扫描技术对不同芳香层片平均堆砌层数的煤系石墨及其表面石墨化均匀程度进行表征。结果表明：对无序石墨,石墨微晶的尺寸较小并任意取向,随着平均堆砌度及堆砌层数增加,石墨微晶边缘的拉曼光谱特征显现。在无序结构向有序转化的同时,石墨微晶缺陷逐渐消亡,拉曼光谱一级模中D3、D4峰逐渐不显著或消失,但是其倍频峰均微弱出现,尤其2D1峰强度逐渐增大。将I_D1/I_D2参数的含义进一步引申为缺陷类型及平均定向性,且无烟煤的I_D1/I_D2极大,随着石墨微晶尺寸增大（d₀₀₂＜0.344 0 nm）,至三维有序结构的石墨时I_D1/I_D2最小。在不同激发波长下G峰半高宽总是随着无序度的减小而减小,D1峰和2D1峰等均显示较强的色散效应,各峰强度随激发光能量的增大而增大,在紫外激发下,D1和G峰峰位差显著小于可见光激发。随激发波长的增加,D1峰向着低波数方向移动,2D1峰色散约为D1峰的两倍。高煤级煤石墨化过程中,非定向的芳香碳经历一系列的物理、化学结构演变产生各种中间相态,如残留煤岩显微组分（变镜质组和变惰质组）和新生的石墨组分（热解炭等）共存,因此采用(I_G-I_D1)/(P_G-D1)≥0.3,I_D1/I_G＜0.4,A_D1/A_(D1+G)＜0.45等作为石墨和半石墨的界线,利用平面扫描区域成像来表征样品石墨化的表面均匀程度,取频数分布置信区间≤0.9来综合判定样品表面石墨化度为84.16%~86.40%,平均为85.49%,与利用X射线衍射(XRD)参数估计的石墨化度相当。     

高偏压金属─绝缘体─金属结的光发射

我们制作了一种可在6-11V偏压范围内均匀发射可见光的新型金属-绝缘体-金属结型发光器件,其内层结构是Al-Al₂O₃-MgF₂-An(Cu),其承受偏压、单位面积发光功率及相应的外量子效应高过迄今已知的M-O-M遂道结型发光器件.本文首次报导并论证了这一由Schottky热电子所激发的光发射及其物理图象:Schottky热电子在AO(Cu)-真空界面激发表面等离极化激元(SPP);Au(Cu)-真空界面的SPP通过表面粗糙度与外光子耦合.这一图象与该器件的电流-电压(I-V)、电流-温度(I-T)关系及其发射光谱的主要特征一致.     

表面等离激元——机理、应用与展望

等离激元光子学(plasmonics)的研究内容是金属纳米结构独特的光学性质及其应用.随着纳米科技的进步,等离激元光子学已经迅速发展成为一门新兴学科,在生物、化学、能源、信息等领域具有重要的应用前景.文章主要介绍表面等离激元(surface plasmons,SPs)的一些基本物理性质,包括局域的表面等离激元(localized surface plas-mon,LSP)和传导的表面等离激元(propagating surface plasmon polariton,SPP),文章还介绍了表面等离激元的几个重要的应用方向,例如生物/化学传感器、表面等离激元激光、光开关器件以及表面等离激元光逻辑运算,等等.     

金膜上亚波长小孔阵列表面等离激元颜色滤波器偏振性质

金属薄膜上制备的表面等离激元颜色滤波器具有很强的颜色可调性. 在200 nm厚的金膜上, 通过聚焦离子束刻蚀, 制备一系列周期逐渐变化的圆形、方形、矩形亚波长尺寸小孔方阵列表面等离激元颜色滤波器, 改变入射光的偏振方向, 观察其超透射滤波现象. 研究发现: 对于矩形小孔阵列, 其透射光颜色随入射光偏振方向的变化而改变; 而对于圆形、方形的小孔阵列, 其透射光颜色对入射光的偏振方向并不敏感. 分析表明, 对于金膜上刻蚀的小孔结构, 虽然结构的周期性导致的表面等离激元极化子会对透射光的颜色变化产生一定影响, 但是随小孔形状变化的局域表面等离激元共振才是影响透射光颜色的决定性因素. 如果入射光没有在小孔中激发出局域表面等离激元, 则表面等离激元极化子对透射光的影响也会消失. 根据不同形状小孔周期结构透射光颜色随入射光的偏振变化特点, 制备出了包含两种小孔形状的复合周期结构. 随着入射光偏振方向的改变, 该结构会显示出不同的颜色图案. 关键词： 表面等离激元极化子 局域表面等离激元 颜色滤波器 亚波长小孔阵列     

表面等离激元辅助反应及其表征研究进展

金属纳米结构的表面等离激元共振效应能够显著提高金属对光的吸收。表面等离激元效应在金属表面产生增强电场的同时,产生大量的热和高于费米能级的热电子。这些效应可以极大的提高表面化学反应速率,甚至提高选择性,实现传统方法难以实现的反应。本文回顾了表面等离激元辅助反应中各种效应(包括光电场、热和热电子)对反应的作用,总结了高效表面等离激元辅助反应的原则。等离激元增强拉曼光谱由于具有既能通过表面等离激元引发反应,又能通过光谱观测反应的特点,因此在表征等离激元辅助反应方面具有独特的优势。最后从原位表征、界面调控和多外场协同等方面提出了展望。     

沉积条件对ZnTe/ZnTe:Cu薄膜结构及CdTe电池性能的影响

用共蒸发法沉积了ZnTe/ZnTe:Cu复合多晶薄膜,通过XRD,XPS,C-V,I-V等研究了沉积温度对薄膜结构、Cu浓度分布及电池性能的影响.结果表明,沉积温度对薄膜的结构影响不明显,薄膜呈立方相,经185 ℃退火后出现了六方相.对薄膜的剖析发现,Cu浓度分布呈现先上升到一极大值而后快速下降的趋势, 100 ℃沉积的ZnTe/ZnTe:Cu薄膜,ZnTe层起到了阻止Cu扩散作用,用这种薄膜制作的太阳电池X_D较大 关键词： ZnTe多晶薄膜 沉积温度 薄膜结构 器件性能     

后退火处理对铟锡氧化物表面等离激元共振特性的影响

近年来,表面等离激元光子学发展迅速,并取得了众多新成果.重掺杂半导体材料的表面等离激元共振性质的研究,也得到了人们越来越多的关注.本文通过纳米球刻印技术制备准三维二氧化硅纳米球阵列,在阵列上沉积铟锡氧化物薄膜,通过不同条件下的后退火处理改变铟锡氧化物薄膜的载流子浓度和载流子迁移率,并研究随着材料性质的改变其相应表面等离激元共振特性的变化规律.结果表明：退火处理均使铟锡氧化物薄膜的晶粒长大,光学透过率增加;在空气中退火会导致铟锡氧化物薄膜的载流子浓度减少,其表面等离激元共振峰红移;而真空退火则使铟锡氧化物薄膜的载流子浓度增加,共振峰蓝移.这些研究结果可为后续铟锡氧化物表面等离激元材料及器件的研究提供科学依据和实际指导.     

热退火诱导纳米银膜形貌变化对表面等离激元共振特性的影响

采用磁控溅射技术制备并通过不同温度的快速热退火得到了不同表面形貌的纳米银膜。利用XRD,SEM和紫外-可见-近红外透射光谱等技术研究了纳米银膜的结构、表面形貌与光学性质。实验结果表明,随着退火温度的升高,银膜开口面积分数、银岛(纳米粒子)间距增大,长宽比减小,银岛由各向异性的蠕虫状变成各向同性的纳米球;表面等离激元共振带发生连续的蓝移,半高宽变窄。分析表明,纳米银膜的表面等离激元共振特性可以通过热退火诱导的表面形貌变化实现调整。     

D3h和D4h等离激元超分子的Fano共振光谱的 子集合分解解释

针对D_3h和D_4h对称构型金属纳米多颗粒集合即等离激元超分子表面等离激元共振光谱的子集合分解及其相对应的Fano共振光谱低谷的产生机理, 本文运用群论的方法做出了详细的分析研究. 运用与群论中求解分子简正振动模式类似的方法, 推导证实了在线偏振光入射时, D_nh环形多颗粒只有2个电偶极表面等离激元共振模式, 增加中心颗粒会使模式增加1个. 对D_3h和D_4h等离激元超分子的表面等离激元共振模式进行不可约表示基向量正交分解分析表明, Fano共振光谱低谷是由于两个起主要作用的相邻模式包含有共同的正交基向量, 并形成相消干涉而产生. 这进一步验证了Fano共振光谱低谷的起源除传统观点(即源自于宽频超辐射亮模式和窄频低辐射暗模式之间的耦合)之外的另一种解释视角.     

Direct growth of graphene films without catalyst on flexible glass substrates by PECVD

A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed. The quality of the prepared graphene films is evaluated by scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, and electrochemical measurements. In a radio frequency(RF) power range of50 W–300 W, the graphene growth rate increases with RF power increasing, while the intensity ratio of D-to G-Raman peak(ID/IG) decreases. When the RF power is higher than 300 W, the ID/IGrises again. By optimizing experimental parameters of hydrogen plasma etching and RF power, the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency, good electrical conductivity, and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.     

Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation

We report an abnormal phenomenon that the source-drain current (I_D) of AlGaN/GaN heterostructure devices decreases under visible light irradiation. When the incident light wavelength is 390 nm, the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of I_D. Based on the UV light irradiation, a decrease of I_D can still be observed when turning on the visible light. We speculate that this abnormal phenomenon is related to the surface barrier height, the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level. For visible light, its photon energy is less than the surface barrier height of the AlGaN layer. The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN. The electrons trapped in ionized donor-like surface states show a long relaxation time, and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas (2DEG) channel at AlGaN/GaN interface, which causes the decrease of I_D. For the UV light, when its photon energy is larger than the surface barrier height of the AlGaN layer, electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly, which cause the increase of I_D.     

65 nm互补金属氧化物半导体场效应和晶体管总剂量效应及损伤机制

对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制.     

高煤级煤石墨化轨迹阶段性的XRD和Raman光谱表征

为了研究石墨化过程中煤的分子结构有序化轨迹,选取湖南、陕西19个不同变形-变质程度高煤级煤为研究对象,采用工业分析、元素分析、X射线衍射分析（XRD）和拉曼光谱分析（Raman）等手段,结合分峰拟合的数学方法,对系列样品分子结构参数（XRD结构参数,如石墨化度、延展度L_a、堆砌度L_c及面网间距d₀₀₂等;Raman参数,如P_G,P₁,R₁,R₂等）进行了统计与计算。研究结果表明：煤化作用阶段H/C随变质程度增加而逐渐减小,但在石墨化阶段以物理变化为主,其趋势变缓或不显著;XRD参数d₀₀₂,L_a,L_c,N及L_a/L_c等随变质程度呈现非线性连续（阶跃性）变化,拐点大致对应R_m=7.0%,d₀₀₂=0.338 nm,拐点之前L_a,L_c及N变化较小（或平稳增大）,拐点之后石墨晶体结构快速形成,微晶尺寸增大,拼叠作用开始并逐渐增强;L_a/L_c变化亦反映石墨化过程由缩合作用向拼叠作用转变。高煤级煤石墨化轨迹可按有序化增加的三阶段模型来表述,无定形碳（无烟煤）至变无烟煤阶段,G峰位、峰位差P₁变化显著,I_D1/I_G在表达无序程度时不服从TK关系;变无烟煤至半石墨阶段,即从石墨化开始结构演化轨迹呈现不同方向,R₁随着有序的增加呈现截然相反的轨迹,部分石墨组分演化服从TK关系,R₂在石墨化度为45%时呈现截然相反的轨迹;石墨阶段温、压作用导致微晶尺寸急剧增加（或阶跃）,I_D1/I_G减小服从TK关系。当不同石墨化程度的新生组分共存时,d₀₀₂不足以代表样品最大的演化程度,但其作为平均度量来标度高煤级煤石墨化过程中结构演化特征仍为较优的选择,且(002)和(γ)峰半峰宽能较好地区分石墨化煤的变质类型,H/C,I_D1/I_G亦随d₀₀₂演化轨迹不同,需利用d₀₀₂＜0.344 0 nm,R₁＜2.0,H/C＜0.12等综合指标判别石墨化的开始。由此可以看出,采用XRD和Raman光谱分析技术可以表征高煤级煤石墨化轨迹阶段性以及结构的差异性。     

Temperature effects in directional elastic peak electron spectroscopy for the Cu(011) face: observation of the surface roughening transition

Polar profiles of directional elastic peak electron spectroscopy (DEPES) and directional Auger electron spectroscopy (DAES) were measured for the Cu(011) face in the vicinity of particular close-packed directions in the sample and for sample temperatures of 400<T<1200 K. For all directions investigated, the ln C versus T curve, where C is the contrast: C = 2(I_max−I_max)/(I_max + I_max) for a particular maximum in the polar profile, is composed of three linear parts. The slope of this particular part is different for the different maxima investigated but the breaks between the linear parts occur always at the temperatures T₁ ≈ 700 K and T₂ ≈ 1000 K. The former break is ascribed to the appearance of anharmonic thermal vibrations while the latter one indicates the surface roughening transition.

DEPES was applied for the first time in the investigation of the surface roughening transition and it was found to be a very convenient and effective method. The surface roughening temperature T_R ≈ 1000 K was found for the Cu(011) face, in an excellent agreement with theoretical predictions.     

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors(HEMTs) with L_G= 1 μm~20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm~20 μm, and their breakdown voltages are in a range of 140 V–156 V.     

静电纺丝法制备聚丙烯腈/银纳米粒子复合纳米纤维及其SERS特性

利用静电纺丝技术制备了一种聚丙烯腈/银纳米粒子复合纳米纤维的表面增强拉曼光谱基底。通过调节聚丙烯腈溶液的浓度可得到不同直径、不同厚度的纤维薄膜,将聚丙烯腈的N,N-二甲基甲酰胺溶液与硝酸银溶液混合得到聚丙烯腈/Ag种子溶液,然后利用静电纺丝技术制备聚丙烯腈/Ag种子/AgNO₃复合纳米纤维;加入AgNO₃并利用水合肼二次还原后可制备适合拉曼检测的聚丙烯腈/Ag纳米粒子复合纤维膜,聚合物纤维表面和内部的金属纳米粒子的密度可调节。通过调节不同的纳米粒子的密集程度,可构筑出具有较高的电磁场增强效果的特殊的“热”结构(高局域强电磁场的亚波长区域)。而聚合物纤维内部的银纳米粒子可通过溶胀作用吸附更多的探针分子,提高拉曼检测的灵敏度。该基底有很好的SERS信号,并且可大规模制备。     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.