沉积条件对ZnTe/ZnTe:Cu薄膜结构及CdTe电池性能的影响

用共蒸发法沉积了ZnTe/ZnTe:Cu复合多晶薄膜，通过XRD，XPS，C-V，I-V等研究了沉积温度对薄膜结构、Cu浓度分布及电池性能的影响.结果表明，沉积温度对薄膜的结构影响不明显,薄膜呈立方相，经185 ℃退火后出现了六方相.对薄膜的剖析发现，Cu浓度分布呈现先上升到一极大值而后快速下降的趋势, 100 ℃沉积的ZnTe/ZnTe:Cu薄膜，ZnTe层起到了阻止Cu扩散作用，用这种薄膜制作的太阳电池X_D较大 关键词： ZnTe多晶薄膜 沉积温度 薄膜结构 器件性能

The influence of doposition conditions on the structrure of ZnTe/ZnTe:Cu thin films and the properties of CdTe cells

Polycrystalline film of ZnTe/ZnTe:Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by XRD,XPS, C-V and I-V analysis. The results indicate that, （1） the deposition temeperature has less effecton the structure of the film ZnTe/ZnTe:Cu, （2） the fact that the Cu concentration in the film deposited at 100℃ raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier （X_D）,smaller capacitance, better diode characteristic and larger conversion efficiency.