Al-Cu-Ge合金的热物理性质与快速凝固规律研究

Al-Cu-Ge合金是典型的三元共晶体系,在工业上有重要的应用价值,对其进行研究有助于了解该合金的热物理性质和提高该合金的结构性能.本文选择了Al55Cu10Ge35,Al70Cu10Ge20和Al80Cu10Ge10三种成分合金作为研究对象,对合金的固态比热和热膨胀系数进行了测量,并对比分析了合金在近平衡凝固和落管快速凝固条件下的组织特征和凝固路径.研究发现,合金比热随Al含量的增大和Ge含量的减少而增大.这三种成分合金的软化温度均为666 K,物理热膨胀系数α在370—650 K温度范围内基本一致,约为1.5×10-5K-1.近平衡凝固条件下合金凝固过程中最后一步反应生成的均为(Al)+(Ge)二相共晶而不是三元共晶,这表明(Al)、(Ge)和CuAl2相在这三种成分的Al-Cu-Ge合金中难以同时形核并协同生长.然而,在快速凝固条件下,初生相的形核和生成受到抑制,合金中更易于形成二相共晶和三元共晶组织.     

Structural and physicomechanical properties of directionally crystallized aluminum-silicon alloys

Aluminum-silicon alloys (from 8 to 25 wt % Si) have been prepared by directional crystallization of shaped samples by the Stepanov growth at a solidification rate of 10³ μm s^?1. The dependences of the microhardness, Young’s modulus, internal friction, yield stress, and ultimate tensile stress of the alloys on the silicon content have been studied. It has been shown that the ultimate tensile stress has a maximum, and the yield stress has a kink at 15 wt % Si; the composition corresponds to the eutectic composition at the solidification rate used. The silicon content in the eutectics increases with an increase in the solidification rate. The increase in the ultimate tensile stress is explained by an increase in the volume fraction of the more strength fine-crystalline structure of the eutectics as a result of the decrease in the volume fraction of more plastic dendrites of the primary crystals of the α-Al solid solution. The decrease in the ultimate tensile stress of the hypereutectic alloy is determined by the increase in the volume fraction of brittle primary silicon crystals of various shapes.     

Elasticity,anelasticity, and microplasticity of directionally crystallized aluminum-germanium alloys

The structure, Young’s modulus defect, and internal friction in aluminum-germanium alloys have been studied under conditions of longitudinal elastic vibrations with a strain amplitude in the range of 10^?6?3 × 10^?4 at frequencies about 100 kHz. The ribbon-shaped samples of the alloys with the germanium content from 35 to 64 wt % have been produced by drawing from the melt by the Stepanov method at a rate of 0.1 mm/s. It has been shown that the dependences of the Young’s modulus defect, logarithmic decrement, and vibration stress amplitude on the germanium content in the alloy at a constant strain amplitude have an extremum at 53 wt % Ge. This composition corresponds to the eutectic composition. The dependences of the Young’s modulus defect, the decrement, and vibration stress amplitude at a constant microstrain amplitude have been explained by the vibrational displacements of dislocations, which depend on the alloy structure.     

Kinetics of silicon precipitation in a directionally crystallized binary aluminum-silicon alloy

The precipitation of silicon atoms in aluminum in an Al-Si alloy has been studied using differential scanning calorimetry. The alloys containing 8, 13, and 15 wt % silicon were obtained by directional solidification of a ribbon pulled from the melt through a shaper by the Stepanov method at a rate of about 10³ μm/s. From the characteristics of the exothermic effects observed in the temperature range 430–650 K, it has been found that the precipitation process leading to the formation of the Guinier-Preston zones occurs with the effective activation energy of 75 kJ/mol, and its intensity decreases with increasing silicon content in the alloy from 8 wt % to the eutectic content. The effect correlates with a decrease in the volume fraction of dendrites of the primary α-Al crystals in the alloy. It can be assumed that the precipitation occurs in the dendrite primary crystals of the solid solution. Based on this assumption, it has been concluded that, during directional solidification of an aluminum-silicon alloy at a rate of 10³ μm/s, the metastable solid solution of silicon in aluminum, in which silicon atoms of the metallic lattice are transformed into clusters with covalent bonding forces, is formed during the dendrite growth of the primary crystals.     

Structure and strength of Al-Si alloys obtained by the Stepanov method

Al-Si alloy samples with a silicon content from 8 to 15 wt % were obtained by the Stepanov method at solidification rates of 10² and 10³ µm s^?1. Tensile and bending strain diagrams were studied at a strain rate of about 10^?4 s^?1. The microstructure of the samples was investigated. It was found that the silicon content in the eutectic structure of the alloy grows as the solidification rate increases. The yield stress and the tensile strength increase as the silicon content grows.     

Structure and physicomechanical properties of Al-Si alloys

Al-Si alloy samples with a silicon content of 8–15 wt % are grown by the Stepanov method at a solidification rate of 10² and 10³ μm/s. The microstructure of the samples is examined, and the stress-strain curves obtained during tension and bending at a strain rate of 10^?4 s^?1 are studied. The behavior of Young’s modulus, the modulus defect, and ultrasonic attenuation is investigated. The silicon content in a eutectic structure is found to increase with the solidification rate. The yield strength and the ultimate tensile strength increase with the silicon content up to a eutectic composition. The quality index (which characterizes the strength and plasticity of the material) of Stepanov-grown samples is higher than the quality indices of traditional modified ingots.     

In-situ monitoring and control of hydrogenated amorphous silicon–germanium band-gap profiling during plasma deposition process

In-situ germanium content monitoring and its characteristics in SiH₄/GeH₄/H₂ plasmas was studied during hydrogenated amorphous silicon–germanium (a-SiGe:H) film depositions. Since an appropriate band-gap profiling in a-SiGe:H deposition is very important to achieve high efficiency solar cell, the accurate monitoring and control of Ge contents are required. In this work, we found the spectral intensity ratio of silicon atom (288.2 nm) and germanium atom (303.9 nm) emission has strong relation with Ge content in plasmas. In typical, band-gap energy of films was decreased with the increasing of gas flow ratio GeH₄/SiH₄. However, at different total flow rate of GeH₄, the band-gap was different for same gas flow ratio cases because the Ge content in plasmas was changed due to the changes of electron temperature by hydrogen dilution. On the other hand, the emission intensity ratio Ge/Si detected the band-gap variation. Using this method, therefore, we measured and control Ge/Si to make a U-shape band-gap profile which was proved by an ellipsometer and Auger electron spectroscopy depth profile analysis.     

深过冷液态Al-Ni合金中枝晶与共晶生长机理

在自由落体条件下实现了液态Al-4 wt.%Ni亚共晶、Al-5.69 wt.%Ni共晶和Al-8 wt.%Ni过共晶合金的深过冷与快速凝固. 计算表明, (Al+Al₃Ni)规则纤维状共晶的共生区是4.8–15 wt.%Ni成分范围内不闭合区域, 且强烈偏向Al₃Ni相一侧. 实验发现, 随液滴直径的减小, 合金熔体冷却速率和过冷度增大, (Al)和Al₃Ni相枝晶与其共晶的竞争生长引发了Al-Ni 共晶型合金微观组织演化. 在快速凝固过程中, Al-4 wt.%Ni亚共晶合金发生完全溶质截留效应, 从而形成亚稳单相固溶体. 当过冷度超过58K时, Al-5.69 wt.%Ni 共晶合金呈现从纤维状共晶向初生(Al) 枝晶为主的亚共晶组织演变. 若过冷度连续增大, Al-8 wt.%Ni过共晶合金可以形成全部纤维状共晶组织, 并且最终演变为粒状共晶.     

强磁场对Al-Si合金凝固组织中硅分布的影响

为了揭示强磁场对金属凝固组织的影响规律，本文研究了Al-14.98%Si(质量分数)和Al-9.2%Si(质量分数)合金在强磁场作用下凝固组织的变化趋势，分析了强磁场对合金凝固组织中Si分布的影响.研究发现，均恒磁场和梯度磁场分别通过洛伦兹力和磁化力的作用对合金的凝固组织产生影响，强磁场可以显著改变初晶硅在合金中的分布状况.在均恒磁场作用条件下初晶硅在合金中均匀分布；在梯度磁场条件下，由于磁化力和浮力的共同作用，初晶硅在试样的上部或下部聚集.同时，磁化力也改变了共晶体在合金中的组织形态，使试样上部和下部共晶体的层片间距明显不同.理论和实验分析表明，Al-Si合金在强磁场中凝固时，磁场能作用于凝固过程，使共晶体中的Al含量增大，共晶点向左偏移. 关键词： 强磁场 凝固过程 共晶组织 Al-Si合金     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

锗在高压下固化时的相演化及动力学成因

 报道了锗在高压下固化时亚稳相的形成和转化。通过原位观测锗在高压下固化过程中的电阻变化、差热信号，并结合X射线衍射分析，详细讨论了锗在高压下固化时的相演化行为。在我们所进行的实验条件下，当压力大于4 GPa时，熔态锗首先固化成金属锗，然后再向GeⅠ或GeⅢ相转变。还讨论了压力对锗的固化动力学参数的影响。     

Solidification mechanisms of unmodified and strontium-modified hypereutectic aluminium–silicon alloys

The effects of strontium on the solidification mode of hypereutectic aluminium–silicon alloys have been studied. Samples were prepared from an aluminium–17?wt% silicon-based alloy and strontium was added at several different concentrations. The development of the microstructure was investigated by cooling curve analysis, interrupted solidification experiments and optical and scanning electron microscopy. It was found that nucleation of primary silicon is suppressed by additions of strontium. The suppressed nucleation results in supersaturation of the liquid prior to nucleation, and an increased growth rate after nucleation. As a result, the silicon crystals become less faceted and more dendritic with increasing strontium additions. Increasing the strontium concentration slightly refined the eutectic spacing and introduced a small amount of fibrous silicon. Electron back-scatter diffraction measurements were performed to determine the crystallographic relation between the primary and eutectic silicon phases. The eutectic silicon in the unmodified alloy does not have any crystallographic relationship with the primary silicon crystals. In contrast, the eutectic silicon crystals in the strontium-modified alloys often share an identical or twin relationship with nearby primary silicon crystals. The incidence of twinning within primary silicon crystals was relatively low and did not appear to increase with strontium additions.     

On the use of the thermal lens effect as a thermo-optical spectroscopy of solids

The annealing behaviour of C-, N-, Mg-, Al- and P-implanted Si and Ge has been investigated by the (p,γ) resonance broadening method. In the cases of C- and Mg-implanted Ge, and N- and Al-implanted Si, fast out-diffusion and blocking of the implanted atoms at the sample surface was observed. Partial out-diffusion and blocking of nitrogen implanted in Ge took place. In the cases of Mg-implanted silicon and P-implanted germanium no blocking occurred and a decrease in the number of implanted atoms took place. In C-implanted Si retarded surface enrichment was observed, whereas in P-implanted Si clear diffusion into the bulk took place and no out-diffusion was observed.     

Effect of Enhanced Gravity on the Microstructure and Mechanical Properties of Al0.9CoCrFeNi High-Entropy Alloy

The influence of enhanced gravity on the microstructure and mechanical properties of the Al_0.9CoCrFeNi high-entropy alloy, which was solidified under normal gravity (acceleration 1 g) and enhanced gravity (acceleration 140 g, acceleration 210 g, and acceleration 360 g) conditions is reported in this paper. Its solidification under enhanced gravity fields resulted in refinement of the columnar nondendritic grain structure and an increase in the area fraction of the body-centered cubic (BCC) structure phases. The mass transfer strengthened by enhanced gravity promoted element diffusion and enrichment, which caused changes in the composition and microstructure that, in turn, affected the mechanical properties of the alloy. The compressive strength and plasticity of the sample solidified at acceleration 360 g were equal to 2845 MPa and 36.4%, respectively, which are the highest values reported to date for Al_0.9CoCrFeNi alloy.     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits

Optical interconnect in integrated optoelectronic circuits is one of the promising next-generation technologies for replacing metalized interconnect. Efforts have been made to use silicon (Si)-compatible materials such as germanium (Ge) and Ge-buffered III–V compound semiconductors, along with Si, as optical sources for Si and group-IV integrated optoelectronic systems. This opens the possibility that higher fraction of Ge with its high refractive index (n) can be incorporated in Si waveguide for optical interconnect and the graftability between Si and group-IV or III–V materials would be improved in silicon photonics. In this work, advantageous features of nano-structured silicon germanium (Si_1−xGe_x) optical waveguide with different Ge fraction (x) were evaluated by both optical simulations and theoretical calculations, which are mainly found in the enhanced optical confinement and better interfacing capability. Along with the SiGe waveguide, performance of Si_1−xGe_x microring resonator under material loss in the effect of extinction coefficient (k) has been investigated to suggest the necessity of optimizing the Ge content in Si_1−xGe_x passive devices. While carrying out the establish design criteria, n and k have been modelled in closed-form functions of Ge fraction at 1550 nm. Furthermore, by examining high-resolution transmission electron microscopy (HR-TEM) images, process compatibility of Ge with either group-IV alloys or III–V compound semiconductors is confirmed for the monolithically integrated photonic circuits.     

Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al₂O₃ substrate is no lower than 420, 500, and 77 K, respectively.     

在铝镁合金的疲劳载荷过程中溶质原子与位错的交互作用

本文进行了淬火状态的、含0.52,0.91,3.46和5.15％Mg的铝合金的扭转疲劳试验,测定了相应的ΔE-N曲线和T_m-N曲线。实验结果指出,对于含镁量为0.52,0.91％的试样来说,当表面扭应变较小时,ΔE在起始时,随着应力循环数的增加而下降。当表面扭应变增大时,ΔE-N曲线始而变平,继而上升,直至达到一较高值才稳定下来。当试样中的含镁量为3.46％时,在扭应变不太大时,ΔE-N曲线的变化情况与Al-4％Cu合金的相象,不过当扭应变足够大时,ΔE起始时上升,并且经过一个峯值又下降。当含镁量增至5.15％时,ΔE-N曲线的表现已完全与Al-4％Cu合金的相象,在所用的最高表面扭应变下也并不表现出明显的峯值。对于所用的各种成分的试样来说,最大抗扭矩T_m起始总是上升的。上述结果都可以根据溶质镁原子在疲劳过程中渐渐进入位错,形成气团来解释。可以认为,在铝镁合金的情形,产生ΔE的因素以及影响ΔE的大小的因素,对于疲劳载荷的起始阶段来说,可能都主要是由于气团的作用。当含镁量较低时,对于足够高的表面扭应变来说,气团较为松动,位错能够拖着气团运动,从而需要作功,使ΔE和T_m都上升。但当合镁量较高时,或表面扭应变不太大时,在疲劳一起始就形成了能够对于位错起钉扎作用的足够浓的气团。继续进行疲劳时,进入位错的溶质原子将使位错的动性进一步降低,导致ΔE起始下降,T_m起始上升。此外,还对于经过不同时效处理的Al-0.52％Mg和Al-3.46％Mg合金进行了疲劳试验,观测到应变时效现象,这与上述的溶质原子气团模型相合。     

Effect of germanium addition on the physical properties of Se–Te glassy semiconductors

The effect of germanium addition on the physical properties, i.e. density, molar volume, compactness, number of lone-pair electrons, average coordination number, heat of atomization, mean bond energy, cohesive energy and glass-transition temperature, of (Se₈₀Te₂₀)_{100? x} Ge _x (x = 0, 2, 4, 6) bulk glassy alloys was investigated. The density of the glassy alloys is found to decrease with increasing Ge content. The molar volume and compactness of the structure of the glass were determined from the measured density. The mean bond energy is proportional to the glass-transition temperature. The cohesive energy of the samples has been calculated using a chemical bond approach and is correlated with an increase in the optical energy gap with increase in the Ge content. The heat of atomization was also calculated and correlated with the optical energy gap. The glass-transition temperature has been estimated using different methods and is found to increase with an increase of Ge content.     

压力淬火过程中锗的相结构研究

 应用高压原位差热方法，直接测量了压力下锗的固化参数─—固化温度与过冷度。高压差热信号表明，当压力大于3 GPa时，锗在凝固过程中可能发生结构相变。X射线结构分析表明，在最终的样品中除GeⅠ相外，还形成GeⅢ相和GeⅣ相。