Phonons in Quantum-Dot Quantum Well

Phonon modes of A1As/GaAs/A1As and GaAs/A1As/metal Pb quantum-dot quantum wells (QDQW‘s) with the whole scale up to 90 A^О are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AlAs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (Г)-like modes of QDQW‘s that have maximum bulk GaAs-LO (Г) parentages in all modes covering thewhole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting thestructure parameters. In A1As/GaAs/A1As, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/A1As/metal Pb QDQW‘s show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model The frequency spectra in both GaAs-like andAlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A^О Defects at metal/A1As interface have significant influence to AlAs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.     

Phonons in Quantum-Dot Quantum Well

Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW‘s)with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AMs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (F)-like modes of QDQW‘s that have maximum bulk GaAs-LO (F) parentages in all modes covering the whole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting the structure parameters. In AlAs/GaAs/AlAs, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/AMs/metal Pb QDQW‘s show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model. The frequency spectra in both GaAs-like and AlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A. Defects at metal/AlAs interface have significant influence to AMs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.     

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes as well as the corresponding Fro^ehlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-well wire (QWW) are derived and studied. Numerical calculations on GaAs/AlzGa1-x As cylindrical QWW are performed. Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersion frequencies of IO or SO phonon modes sensitively depend on the Al mole fraction x in AlzGa1-x As material and the wavevector in z direction, kz. With the increasing of kz and quantum number m, the frequency of each IO mode approaches one of the two frequency values of the single GaAs/AlxGa1-x As heterostructure, and the electrostatic potential distribution of the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the coupling between the electron-IO and -SO phonons becomes weaker.     

GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction(TJ) with using tellurium(Te) and magnesium(Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy(MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 m A/cm2, but a low open-circuit voltage range of1.4 V~1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy(SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended Ga As n++/p++junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ~ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening,which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell.     

Broadband nonlinear optical response of graphdiyne for mid-infrared solid-state lasers

Graphdiyne(GDY), a novel all-carbon nanomaterial, is considered the most easily synthesized and stable carbon allotrope,positioning it as a promising photoelectric material. Herein, we successfully fabricated a high-quality GDY saturable absorber and saturable absorber mirror. Both broadband nonlinear saturable absorption and ultrafast relaxation dynamic properties in midinfrared region of the GDY were investigated. All solid-state diode-pumped short and ultrashort pulsed lasers were realized using the GDY absorber at wavelengths of 2 and 2.8 μm, respectively. The results were then theoretically analyzed. This is the first presentation of ultrashort pulsed lasers in the mid-infrared region with GDY absorbers. These results resolutely confirm that GDY could be an optional broadband SA for all solid-state mid-infrared pulsed lasers, and they evidence its promising applications in mode-locked ultrafast lasers.     

Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.     

Effects of confined longitudinal and interface optical phonons on excitons in an asymmetric quantum well

The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga 1 x Al x As/GaAs/Ga 0.7 Al 0.3 As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energ...     

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.     

Electron self-energy and effective mass in a single heterostructure

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Greenfunction method. Numerical calculations of the electron self-energy and effective mass for GaAs/A1As heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.     

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I--V (current--voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors.     

Elastic behavior of disclination dipole near nanotube with surface/interface effect

In this paper, we present an analytical solution of the interaction of the nanotube （NT） with a wedge disclination dipole in nanotube-based composites. The corresponding boundary value problem is solved exactly by using complex potential functions. The explicit expression of the force exerted on disclination dipole is given by using the generalized Peach- Koehler formula. As a numerical illustration, both the equilibrium position and the stability of the disclination dipole are evaluated for different material combinations, relative thickness of an NT, surface/interface effects, and the features of the disclination dipole. The results show that as the thickness of the NT layer increases, the NT has a relatively major role in the force acting on the disclination dipole in the NT-based composite. The cooperative effect of surface/interface stresses and the NT becomes considerable as the increase of NT layer thickness. The equilibrium position may occur, even more than one, due to the influences of the surface/interface stress and the NT thickening. The influences of the surface/interface stresses and the thickness of the NT layer on the force are greatly dependent on the disclination angle.     

Practical absorption limits of MPP absorber

The construction and properties of microperforated panel (MPP) absorber are discussed. The absorption limit of the absorber had been shown that low values of the perforate constant k = d(f/10)1/2 and the orifice diameter d (in mm) are essential for MPP to have high absorption in wide frequency band. To find the exact limits, take 1 for k as a start, because both specific resistance and high absorption require k around one. And the orifice diameter d is chosen as 0.1 mm, so that the peak absorption coefficient (resonance absorption) is at 1000 Hz, and high sound frequency may be in the absorption region. Is it possible for a single layer of such an MPP to cover the whole absorption region required in practice? The half-absorption limit is not a good criterion, because low absorption comes in also in some cases. The 0.5 absorption coefficient limit is suggested for practical region, as a standard for comparison. Absorption curves were drawn for different load resistances, of absorption coefficients versus frequency. Ordinary MPP absorber absorbs in slightly over two octaves, and the new absorber with r = 1 (specific resistance equal to the characteristic impedance in air)is slightly better than these, 2.5 octaves. The new absorbers with r > 1, are much better than these, and some satisfies high absorption in broad frequency range. Realization of these will mean great progress of MPP absorbers.     

Fabrication and Characterization of C60-Based Organic Schottky Diodes

We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.     

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes aswell as the corresponding Frohlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-wellwire (Q WW) are derived and studied. Numerical calculations on GaAs/AlxGa1-xAs cylindrical QWW are performed.Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersionfrequencies ofIO or SO phonon modes sensitively depend on the Al mole fraction x in Alx Ga1-x As material and the wave-vector in z direction, kz. With the increasing of κz and quantum number m, the frequency of each IO mode approaches oneof the two frequency values of the single GaAs/Alx Ga1-xAs heterostructure, and the electrostatic potential distributionof the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the couplingbetween the electron-IO and -SO phonons becomes weaker.     

Strain Field in GaAs/GaN Wafer-Bonding Interface and Its Microstructure

The strain fields in a wafer-bonded GaAs/GaN structure are measured by electron backscatter diffraction （EBSD）. Image quality （IQ） of EBSD Kikuchi patterns and rotation angles of crystal lattices as strain sensitive parameters axe employed to chaxacterize the distortion and the rotation of crystal lattices in the GaAs-interface-GaN structure, as well as to display the strain fields. The results indicate that the influence region of the strains in the wafer-bonded GaAs/GaN structure is mainly located in GaAs side because the strength of GaAs is weaker than that of GaN. The cross-sectional image of transmission electron microscopy （TEM） further reveals the distortion and the rotation of crystal lattices induced by strains systematically.     

Two-dimensional ring-type photonic crystals in the near-infrared region

We propose a ring photonic crystal working in the near infrared region, where the air holes in the background material GaAs are arranged to form a series of rings. We find that the band gaps do not depend on the incident direction, and only a small number of rows are needed to create a frequency gap in the transmission spectrum. The transmission spectra of both P and S polarizations show that there is a complete bandgap in the hexagonal ring photonic crystals and the ratio of gap width to mid-gap frequency is as high as 11%.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

Experimental study of the acoustic characteristics of micro-perforated functional absorbers

Micro-perforated panels have been widely used as fiber-free acoustical material for decades in the form of wall or ceiling covering with some air space behind. This paper presents the test study on the acoustical characteristics of two different types of functional absorbers, panel type and tube type, constructed with micro-perforated metal or PVC (polyvinyl chloride) sheets. Acoustical measurements of such functional absorbers in reverberation chamber demonstrate the merit of good absorption as expected. They are not only cost effective in construction and installation, but also appealing esthetically for architectural interior design.     

Experimental study of the plasma window

The plasma window is an advanced apparatus that can work as the interface between a vacuum and a high pressure region. It can be used in many applications that need atmosphere-vacuum interface, such as a gas target, electron beam welding, synchrotron radiation and a spallation neutron source. A test bench of the plasma window is constructed in Peking University. A series of experiments and the corresponding parameter measurements have been presented in this article. The experiment result indicates the feasibility of such a facility acting as an interface between a vacuum and a high pressure region.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.