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1.
通过半导体激光器两端的放大自发荧光辐射可以获取器件的光学增益信息. 本文利用这一新的增益实验测量方法, 开展了对连续运行的808nm GaAs/AlGaAs量子阱激光器横向电场 (TE)与磁场(TM)偏振增益特性的实验研究. 通过将实验结果与理论增益曲线对比, 分析了非应变GaAs量子阱TE和TM极化偏振对应的空穴子能带随注入电流的变化规律, 以及激光器在连续运行状态下的实际增益状态和影响因素.
关键词:
半导体激光器
增益测量
偏振
量子阱和能带 相似文献
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利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率. 相似文献
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为满足半导体光放大器(SOA)在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明:当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。 相似文献
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实验与理论研究了外光注入种子脉冲有效压缩增益开关DFB激光器光谱线宽的注入时间窗口.发现只有在增益开关光脉冲建立之前约100 ps的时间窗口内,注入种子脉冲方可以有效压缩增益开关DFB半导体激光器光谱线宽, 并且线宽随着注入光强度的增加而减小,可产生低啁啾的近变换极限的超短光脉冲.实验证实,在此时间窗口内注入种子脉冲,增益开关DFB激光器的光谱线宽从0.46 nm压缩至0.08 nm,时间带宽积从2.46降低至0.70.同时理论研究了增益开关DFB半导体激光器的光谱线宽压缩与种子脉冲的注入时间及强度的关系. 相似文献
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针对主和副垂直腔表面发射激光器构成的外部注入激光器系统的偏振转换及其非线性动力学行为, 利用周期性极化铌酸锂晶体中准相位匹配线性电光调制, 本文提出了一种新的操控方案并且探索了其控制规律. 研究结果发现, 受到平行光注入或正交光注入的副激光器输出偏振度随外加电场成周期性振荡变化, 其振荡波峰轨迹包络曲线为正弦曲线, 而振荡波谷轨迹包络曲线为余弦曲线; 选取一定的主激光器偏置电流, 通过对来自主激光器的光进行电光调制, 受到两种方式注入的副激光器可以输出任意偏振模, 并且其非线性动力行为经历不同的演变. 另外, 副激光器的偏振度仅依赖于外加电场, 与副激光器的偏置电流无关. 相似文献
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采用增益开关半导体激光器作为注入种子光源来降低另一个增益开关DFB或Fabry-Perot(FP )半导体激光器的脉冲抖动.相位噪声测量技术表明:增益开关FP激光器在外部脉冲光注入 下,激光脉冲抖动(均方值)由1.2ps降低至830fs;增益开关DFB半导体激光器在外脉冲注 入下,脉冲抖动由12ps降低至1.8ps.
关键词:
半导体激光器
光脉冲产生
时间抖动
光子注入 相似文献
8.
依据导电介质的稳态电场理论建立了一种对增益导波型垂直腔半导体激光器注入电流矢量分析的三维解析模型. 计算研究了电流密度空间分布及其与顶面电注入环参量之间的相互关联性. 结果显示在两极之间存在一个载流子径向分布中心极大的区域. 由于激光功率与注入电流之间存在线性关系,因此,要使器件能够获得基模或中心均匀的光强输出以及尽可能低的阈值,应使激光有源层与载流子均匀分布的临界层重合. 计算结果对顶发射与底发射结构以及不同环参数下的载流子分布情况及对近场模式形成的影响进行了分析和讨论.
关键词:
垂直谐振腔激光器
注入电流
激光模式 相似文献
9.
分析了单量子阱(SQW)、多量子阱(MQW)和分别限制异质结构量子阱(SCH-SQW)半导体激光器的阈值.求出了表示光增益随注入载流子密度变化的方程.利用这个结果,得到了上述三种量子阱半导体激光器的阈值电流密度的表达式. 相似文献
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采用第一性原理方法对Ti掺杂CrSi2的几何结构、电子结构、复介电函数、吸收系数、反射谱、折射率和光电导率进行了计算,对Ti置换Cr原子后的光电特性变化进行了分析.结果表明:Ti置换Cr原子后,晶格常数a,b和c均增大,体积变大;Ti的掺入引入了新的杂质能级,导致费米能级插入价带中,Cr11TiSi24变为p型半导体,带隙宽度由未掺杂时的0.38eV变为0.082eV,价带顶和导带底的态密度主要由Cr-d和Ti-d层电子贡献;与未掺杂CrSi2相比,Cr11TiSi24的介电峰发生了红移,仅在1.33eV处有一个峰,而原位于4.53eV处的峰消失;吸收系数,反射率和光电导率明显降低. 相似文献
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采用局域密度泛函理论和第一性原理的方法,计算四方结构和六角结构硅酸锌的平衡晶格常数、电子态密度和能带结构。计算结果表明,四方结构硅酸锌的平衡晶格常数为0.71048nm,六角结构为1.40877nm,两者与实验值的误差均在1%左右。态密度图显示,主要电子态分布在-7.18~0.00eV和2.79~10.50eV两个能量区域;同时,不同元素电子对导带和价带有不同贡献,其中氧的p态电子对价带顶贡献最大,锌的s态电子对导带底贡献最大。能带计算表明,四方与六角结构硅酸锌均为直接带隙半导体,禁带宽度分别为2.66,2.89eV。 相似文献
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Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets are functions of strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical gain and the threshold current density. Under the condition of zero net strain, the values of the well width, cavity length and relative threshold carrier density and threshold current density are determined for realization of 1.55 m wavelength emission. 相似文献
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采用紧束缚方法计算了石墨烯的价带(π)和导带(π*),考虑了非正交基矢下重叠矩阵效应,重叠积分参量s越小,导带越靠近费米面,而价带越远离费米面.在重叠积分参量s≤0.1时,基本保持了原子在实际空间中重叠所引起的能带的改变,太大(s=0.4)则会导致物理上失效.计算了石墨烯的能态密度,在费米面ε=0处(对应Dirac点)的能态密度为零,并且在Dirac点附近呈线性变化. 相似文献
16.
Yuki Obukuro Hiroyuki Nakamura Kenji Obata Shigenori Matsushima Masao Arai Kenkichiro Kobayashi 《Journal of Physics and Chemistry of Solids》2011,72(12):1477-1481
The electronic structure of Sr2Bi2O5 is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr2Bi2O5 is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states. 相似文献
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直接带隙Ge$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Sn$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;本征载流子浓度研究 下载免费PDF全文
通过合金化改性技术, Ge可由间接带隙半导体转变为直接带隙半导体. 改性后的Ge半导体可同时应用于光子器件和电子器件, 极具发展潜力. 基于直接带隙Ge1-xSnx半导体合金8带Kronig-Penny模型, 重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度, 旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考. 研究结果表明: 直接带隙Ge1-xSnx合金导带有效状态密度随着Sn组分x的增加而明显减小, 价带有效状态密度几乎不随Sn组分变化. 与体Ge半导体相比, 直接带隙Ge1-xSnx合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级; 直接带隙Ge1-xSnx合金本征载流子浓度随着Sn组分的增加而增加, 比体Ge半导体高一个数量级以上.
关键词:
1-xSnx')" href="#">Ge1-xSnx
直接带隙
本征载流子浓度 相似文献
18.
Cross-sectional scanning tunneling microscopy and spectroscopy have been used to probe the unreconstructed (1 1 0) surface of a commercially available buried heterostructure laser in ultra high vacuum. Complex re-growth above the non-linear blocking layers is shown to induce tensile strain in the device. Spectroscopic measurements show an increase in both the density of filled valence band states and empty conduction band states as a result of the strain, with a particularly large increase at −3.1 V. Current imaging tunneling spectroscopy measurements show an increase in the tunneling current in to and out of the strained regions at both gap voltage polarities, consistent with the spectroscopy. Moving towards tensile strain, InP is known to maintain much the same bandgap, with the split-off level and lower lying states being drawn up towards the valence band edge, consistent with the data. 相似文献
19.
Ying-bo Lv Ying Dai Kesong YangZhenkui Zhang Wei WeiMeng Guo Baibiao Huang 《Physica B: Condensed Matter》2011,406(20):3926-3930
Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm. 相似文献
20.
External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K. 相似文献