A method to select the optimal equivalent electrical circuit applied to study corrosion system of composite coating on magnesium alloy

Mg-Al layered double hydroxides/micro-arc oxidation (Mg-Al LDHs/MAO) composite coating on AZ31 magnesium alloy is fabricated by hydrothermal treatment. Corrosion system is described by ideal equivalent circuit, in which each layer or interface is regarded as the corresponding electronic component. The optimal equivalent circuit is determined by the minimum total error area of electrical parameters. Error areas of phase angle and modulus for experimental and fitting data are calculated for the selected four different kinds of circuit models such as EC1, EC2, EC3 and EC4. The results show that circuit model EC2 is the best because its total error is 1/2, 2/19 and 1/15 of error values for other three kinds of circuit models, respectively. This work reveals that the optimal equivalent electrical circuit can well reflect corrosion system of Mg-Al LDHs/MAO composite coating with the help of electrochemical impedance spectroscopy (EIS) and scanning electron microscope (SEM).     

Quantum Fluctuations of Current and Voltage for Mesoscopic Quartz Piezoelectric Crystal at Finite Temperature

The mesoscopic quartz piezoelectric crystal equivalent circuit is quantized by the method of damped harmonic oscillator quantization. It is shown that the quantum fluctuations of voltage and current of each loop are related to not only the equivalent circuit inherent parameter and squeezing parameter, but also the temperature, and decay according to exponent along with time in the thermal vacuum state, the thermal coherent state and the thermal squeezed state.     

介观压电石英晶体等效电路的量子化

借鉴阻尼谐振子作量子力学处理的研究思想,将介观压电石英晶体等效电路量子化,在此基础上研究了真空态和压缩真空态下,各支路电流和电压的量子涨落. 关键词： 介观压电石英晶体 等效电路 阻尼谐振子 量子涨落     

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We present an InP HEMT extrinsic parasitic equivalent circuit, in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_mgd are taken into account for the high-frequency magnetic field coupling between device electrodes. Based on the suggested parasitic equivalent circuit, through HFSS and advanced design system (ADS) co-simulation, the equivalent circuit parameters are directly extracted in the multi-step system. The HFSS simulation prediction, measurement data, and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit. The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.     

Study on the step-type circular ring ultrasonic concentrator in radial vibration

In this paper, the plane radial vibration of an isotropic metal thin circular rings is studied and its equivalent circuit model is obtained. Based on the equivalent circuit model, the step-type circular ring concentrator consisting of two metal thin circular rings in radial vibration is analyzed. Its compound equivalent circuit is derived and the resonance frequency equation is obtained. The relationship between the resonance frequency, the radial displacement amplitude magnification and the geometrical dimensions is analyzed. The resonance frequency of the step-type radial concentrator is calculated based on the resonance frequency equation. For comparison, the resonance frequency of the step-type radial concentrator is also obtained by using numerical method. It is illustrated that the resonance frequencies from these two methods are in a good agreement with each other.     

A 2D equivalent circuit of piezoelectric ceramic ring for transducer design

In this paper a 2D equivalent circuit of longitudinally polarized piezoelectric ceramic rings is established, which is obtained as an approximated analytical solution of 3D constitutive equations in the hypothesis of axial symmetry when the shearing stress and torsion are ignored. The mechanical part of the equivalent circuit can be divided into two branches; one branch characterizes the longitudinal extensional vibration, the other represents the radial vibration. The two branches, which are coupled to an electrical port by two transformers separately, mechanically couple to each other by some mechanical impedance at the same time. Similar circuit is also presented when piezoelectric disk is concerned. Based on this model it is able to compute all the relations between the input applied voltage and the output forces and velocities on every external surface analytically. Compared with the 1D equivalent circuits, the 2D equivalent circuit gives a more comprehensive predicts of the thickness and radial modes with sufficient accuracy when the ring or disk is thin. When the ring or disk is so thick that the 1D theory is not validated, an effective predict of the coupled vibration can also be presented. Comparisons with the experimental results show this model is rather accuracy in frequency calculation.     

Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

In this paper, a planar Schottky varistor diode is studied and modeled by equivalent circuit method and three dimensional full wave electromagnetic (3D-EM) method, respectively. The diode's equivalent circuit is extracted from millimeter-wave small-signal S-parameter measurements. Since the package of the diode influences the electromagnetic field distribution at millimeter and sub-millimeter wavelengths, a 3D-EM model and an improved equivalent circuit model is applied to describe the field precisely. The simulated results of equivalent circuit, improved equivalent circuit and 3D-EM model are compared with the measured results. In addition, the effects caused by silver paste conductive adhesive are considered in 3D-EM model and improved equivalent circuit model. The results show that both the 3D-EM model and improved equivalent circuit model have good S-parameter consistency with measured results.     

带状注速调管多间隙扩展互作用输出腔等效电路的研究

带状注扩展互作用速调管(SBEIK)结合了带状注速调管与扩展互作用速调管的优势,在微波和毫米波真空电子器件中具有显著的技术潜力.本文提出了应用于SBEIK的五间隙哑铃型扩展互作用耦合腔输出回路的等效电路模型,获得了建立复杂多间隙扩展互作用腔的等效电路理论的方法.通过推导出的理论,快速确定了五间隙扩展互作用耦合腔的工作模式、谐振频率及间隙阻抗矩阵,由间隙阻抗的频率特性曲线快速估算出各模式对应的带宽,分析研究了耦合系数k以及Q e对于多间隙腔模式频率间隔及带宽的影响.此外,利用三维PIC仿真软件对相应的SBEIK五间隙输出腔高频特性进行了粒子模拟,结果表明,三维仿真获得的工作模式带宽特性与等效电路法计算结果基本一致,证明了本文所建立的等效电路方法的准确性和有效性.     

磁绝缘传输线损失电流等效电路模型

在粒子模拟的基础上,结合经典空间电荷限制流、磁绝缘临界电流的理论公式,拟合得到磁绝缘传输线中空间电荷限制流的修正计算公式,并进一步建立磁绝缘传输线损失电流的插值计算模型。该模型不需要求解广义泊松方程,计算效率高。通过对长同轴磁绝缘传输线的等效电路模拟,得到了与全尺寸粒子模拟结果基本一致的负载电压波形,插值计算模型不仅正确地反映了磁绝缘传输线中的电流损失过程,而且其等效电路模拟计算效率比粒子模拟提高3000倍以上。     

Equivalent circuit with complex physical constants and equivalent-parameters-expressed dissipation factors of piezoelectric materials

The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components (equivalent circuit parameters) are connected to real and imaginary parts of complex physical coefficients of piezoelectric materials. Based on definitions of dissipation factors, three of them (dielectric, elastic and piezoelectric dissipation factors) are represented by equivalent circuit parameters. Since the equivalent circuit parameters are detectable, the dissipation factors can be easily obtained. In the experiments, the temperature and the stress responses of the three dissipation factors are measured.     

单相并联谐振变换器输出LC滤波器参数优化

采用在静止直角坐标系中构造虚拟正交电路的方法,推导了单相并联谐振变换器在直接正交(D-Q)旋转坐标系中的等效电路,求解了该等效电路的传递函数;通过仿真验证所推导的D-Q等效电路能够准确地代表原变换器电路。基于阻抗匹配的原则,通过D-Q等效电路的传递函数对单相并联谐振变换器的输出LC滤波器参数进行了优化,达到了输出脉冲电压上升沿时间小于50μs、过冲小于5%、调节时间小于100μs和纹波小于5%的预期指标,验证了采用该方法来优化并联谐振变换器输出LC滤波器参数的可行性。     

Dynamical characteristics of an HP memristor based on an equivalent circuit model in a chaotic oscillator

To develop real world memristor application circuits,an equivalent circuit model which imitates memductance(memory conductance) of the HP memristor is presented.The equivalent circuit can be used for breadboard experiments for various application circuit designs of memristor.Based on memductance of the realistic HP memristor and Chua's circuit a new chaotic oscillator is designed.Some basic dynamical behaviors of the oscillator,including equilibrium set,Lyapunov exponent spectrum,and bifurcations with various circuit parameters are investigated theoretically and numerically.To confirm the correction of the proposed oscillator an analog circuit is designed using the proposed equivalent circuit model of an HP memristor,and the circuit simulations and the experimental results are given.     

Lumped modeling with circuit elements for nonreciprocal magnetoelectric tunable band-pass filter

This paper presents a lumped equivalent circuit model of the nonreciprocal magnetoelectric tunable microwave bandpass filter.The reciprocal coupled-line circuit is based on the converse magnetoelectric effect of magnetoelectric composites,includes the electrical tunable equivalent factor of the piezoelectric layer,and is established by the introduced lumped elements,such as radiation capacitance,radiation inductance,and coupling inductance,according to the transmission characteristics of the electromagnetic wave and magnetostatic wave in an inverted-L-shaped microstrip line and ferrite slab.The nonreciprocal transmission property of the filter is described by the introduced T-shaped circuit containing controlled sources.Finally,the lumped equivalent circuit of a nonreciprocal magnetoelectric tunable microwave band-pass filter is given and the lumped parameters are also expressed.When the deviation angles of the ferrite slab are respectively 0° and45°,the corresponding magnetoelectric devices are respectively a reciprocal device and a nonreciprocal device.The curves of S parameter obtained by the lumped equivalent circuit model and electromagnetic simulation are in good agreement with the experimental results.When the deviation angle is between 0° and 45°,the maximum value of the S parameter predicted by the lumped equivalent circuit model is in good agreement with the experimental result.The comparison results of the paper show that the lumped equivalent circuit model is valid.Further,the effect of some key material parameters on the performance of devices is predicted by the lumped equivalent circuit model.The research can provide the theoretical basis for the design and application of nonreciprocal magnetoelectric tunable devices.     

“神龙二号”直线感应加速器加速腔电路模拟

针对神龙二号直线感应加速器所采用的非晶磁芯感应加速腔，建立了能够兼顾结构参数和磁芯性能的加速腔电路模型。对与加速腔结构相关的各集总电容参数进行了计算，并通过模拟波形与实验电压电流波形的对比，确定了加速腔磁芯模块的参数设定，实现了对非晶磁芯感应加速腔脉冲励磁过程较为准确的模拟。通过电路模拟，可以得到脉冲励磁时加速腔各部分的电压电流分布，为加速腔的结构优化和故障原因分析提供了有效的手段。     

荷控忆阻器等效电路分析模型及其电路特性研究

忆阻器是物理上新实现的具有记忆特性的基本二端电路元件. 根据φ-q关系式的泰勒级数形式构建了荷控忆阻器等效电路分析模型, 以三次非线性荷控忆阻器模型为例, 对不同参数条件下的荷控忆阻器进行了伏安关系、有无源性等电路特性的理论分析. 结果表明: 荷控忆阻器的伏安关系具有斜体“8”字形紧磁滞回线特性, 随其参数符号的不同, 荷控忆阻器呈现出无源性和有源性, 导致其电路特性发生相应的变化; 相比无源荷控忆阻器, 有源荷控忆阻器更适用于作为二次谐波信号产生电路使用. 制作了荷控忆阻器特性分析等效电路的实验电路, 实验测量结果很好地验证了理论分析结果. 关键词： 荷控忆阻器 等效电路 伏安关系 电路特性     

利用等效电路模型快速分析加载集总元件的微型化频率选择表面

为了提高频率选择表面(FSS)设计优化速度, 利用等效电路方法对基于集总元件加载的微型化FSS结构进行了分析. 根据FSS物理结构建立了相应的等效电路模型, 通过ADS软件对全波分析曲线进行拟合提取了等效电路模型参数, 通过延长曲线范围增加极值点个数提高拟合参数精度. 利用所提取的等效电路参数计算了不同LC 参数下FSS的传输特性, 与全波分析精确结果相对比, 电路模型计算的透过率略高, 中心频点及-3 dB带宽与全波分析结果的相对误差均小于10%. 证明了利用等效电路模型分析复杂FSS结构的可行性, 为FSS设计和快速优化提供了参考. 关键词： 频率选择表面 等效电路 集总元件     

一种新型Cymbal换能器的研究

提出并研究了一种新型的Cymbal换能器.与传统的Cymbal换能器相比,该换能器中的压电陶瓷圆盘由一个金属圆环和压电陶瓷圆盘的径向组合体所代替.论文首先探讨了压电陶瓷圆盘和金属圆环组合体的径向振动,用解析方法得出了其径向振动的机电等效电路.在此基础上,得出了新型Cymbal换能器的机电等效电路,并得出了其共振及反共振...     

PIN限幅器的高功率微波单脉冲效应研究

基于PIN限幅器的等效电路模型,构建了PIN限幅器HPM效应ADS等效电路仿真模型,利用HPM注入实验和等效电路仿真相结合的方法,研究了单个微波脉冲作用下PIN限幅器的响应规律,获取了HPM作用结束后限幅器限幅持续时间与注入脉冲功率、脉宽的对应关系,并对限幅器的限幅持续过程进行了分析。仿真与实验结果表明:PIN限幅器限幅持续时间随着微波脉冲功率和脉宽的增大而变大,实验和仿真结果趋势一致,该研究使用的ADS等效电路模型可以应用于PIN限幅器的高功率微波瞬态响应特性分析研究。     

An equivalent circuit model of a novel photodetector

An equivalent circuit model of a novel photodetector (PD) is proposed in this article. We use this model to describe the relation between the bias voltage and current (I–V), also the bias voltage and capacitance(C–V) of this kind of novel PD. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by circuit testing, we could find they are in good agreement, which proving the correctness of the equivalent circuit model. The signification of this equivalent circuit model is to design an optimal readout circuit (ROIC) for the novel PD.