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忆阻器是物理上新实现的具有记忆特性的基本二端电路元件. 根据φ-q关系式的泰勒级数形式构建了荷控忆阻器等效电路分析模型, 以三次非线性荷控忆阻器模型为例, 对不同参数条件下的荷控忆阻器进行了伏安关系、有无源性等电路特性的理论分析. 结果表明: 荷控忆阻器的伏安关系具有斜体“8”字形紧磁滞回线特性, 随其参数符号的不同, 荷控忆阻器呈现出无源性和有源性, 导致其电路特性发生相应的变化; 相比无源荷控忆阻器, 有源荷控忆阻器更适用于作为二次谐波信号产生电路使用. 制作了荷控忆阻器特性分析等效电路的实验电路, 实验测量结果很好地验证了理论分析结果.
关键词:
荷控忆阻器
等效电路
伏安关系
电路特性 相似文献
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Mapping equivalent approach to analysis and realization of memristor-based dynamical circuit 下载免费PDF全文
A novel mapping equivalent approach is proposed in this paper, which can be used for analyzing and realizing a memristor-based dynamical circuit equivalently by a nonlinear dynamical circuit with the same topologies and circuit parameters. A memristor-based chaotic circuit and the corresponding Chua’s chaotic circuit with two output differentiators are taken as examples to illustrate this approach. Equivalent dynamical analysis and realization of the memristor-based chaotic circuit are performed by using Chua’s chaotic circuit. The results indicate that the outputs of memristor-based chaotic circuit and the corresponding outputs of Chua’s chaotic circuit have identical dynamics. The proposed approach verified by numerical simulations and experimental observations is useful in designing and analyzing memristor-based dynamical circuits. 相似文献
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我们知道,对于可导函数求极值问题。首先求导,让导数为0,求出可疑极值点.但有些函数的导函数为超越函数,其零点(可疑极值点)很难求出, 相似文献
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