基于二维囚禁离子实现受控非门、交换门和相位门

研究了二维囚禁离子与光场相互作用系统中几种基本量子逻辑门的实现方案.通过适当选取激光场与离子内部跃迁频率的失谐量,简化了系统的哈密顿量,并进一步推导出受控非门(C-NOT门)、交换门与相位门的实现方法.在此过程中,系统需满足Lamb-Dicke极限,并要求光场的Rabi振荡频率远远小于离子的振动频率. 关键词： 囚禁离子 受控非门(C-NOT门) 交换门 相位门     

Effects of discharge frequency on plasma characteristics andetching characteristics in high density Cl2 plasma:comparison of ultrahigh-frequency plasma and radio-frequency plasma

We investigated the effects of discharge frequency on the characteristics of polycrystalline-silicon etching rates and on the etching selectivity on the gate oxide (SiO₂). An ultrahigh-frequency (UHF) plasma excited at 500 MHz was found to possess a wider process window for highly selective polycrystalline silicon etching than did an inductively coupled plasma excited at 13.56 MHz. The ionization rate in the UHF plasma is nearly constant at discharge pressures from 3-20 mtorr because the discharge frequency is higher than the electron-collision frequency in that plasma     

Far infrared emission from plasma oscillations of Si inversion layers

We observed narrow-band far infrared emission from Si-MOSFETs with metallic gratings fabricated on the optically semitransparent gate. The gate voltage dependence of the emission frequency, analyzed by a magnetic field tuned detector, shows that it results from radiative decay of the two-dimensional metallic grating.     

Fast and accurate single-island charge pump: implementation of a cooper pair pump

We introduce a Cooper pair "sluice" for the implementation of a frequency-locked current source. The device consists of two mesoscopic SQUIDs and of a single superconducting island with a gate. We demonstrate theoretically that it is possible to obtain a current as high as 0.1 nA at better than ppm accuracy via periodically modulating both the gate charge and the effective Josephson coupling. We find that the device is tolerant against background charge noise and operates well even in a dissipative environment. The effect of the imperfect suppression of the Josephson coupling and the finite operating frequency are also investigated.     

Gate-voltage control of oxygen diffusion on graphene

We analyze the diffusion of oxygen atoms on graphene and its dependence on the carrier density controlled by a gate voltage. We use density functional theory to determine the equilibrium adsorption sites, the transition state, and the attempt frequency for different carrier densities. The ease of diffusion is strongly dependent on carrier density. For neutral graphene, we calculate a barrier of 0.73 eV; however, upon electron doping the barrier decreases almost linearly to reach values as low as 0.15 eV for densities of -7.6×10(13) cm(-2). This implies an increase of more than 9 orders of magnitude in the diffusion coefficient at room temperature. This dramatic change is due to a combined effect of bonding reduction in the equilibrium state and bonding increase at the transition state and can be used to control the patterning of oxidized regions by an adequate variation of the gate voltage.     

High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves

We report on an experimental investigation of the direct current induced by transmitting a surface acoustic wave (SAW) with frequency 2.7 GHz through a quasi-one-dimensional (1D) channel defined in a GaAs - AlGaAs heterostructure by a split gate, when the SAW wavelength was approximately equal to the channel length. At low SAW power levels the current reveals oscillatory behaviour as a function of the gate voltage with maxima between the plateaux of quantized 1D conductance. At high SAW power levels, an acoustoelectric current was observed at gate voltages beyond pinch-off. In this region the current displays a step-like behaviour as a function of the gate voltage (or of the SAW power) with the magnitude corresponding to the transfer of one electron per SAW cycle. We interpret this as due to trapping of electrons in the moving SAW-induced potential minima with the number of electrons in each minimum being controlled by the electron - electron interactions. As the number of electrons is reduced, the classical Coulomb charging energy becomes the Mott - Hubbard gap between two electrons and finally the system becomes a sliding Mott insulator with one electron in each well.     

Adiabatic charge pumping in carbon nanotube quantum dots

We investigate charge pumping in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that, at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency, and direction and develop a model in which our results can be understood as resulting from adiabatic charge redistribution between the leads and quantum dots on the nanotube.     

Interacting quantum wires: A possible explanation for the 0.7 anomalous conductance

We investigate an effective one-dimensional conducting channel considering both the contact umklapp and the Coulomb electron-electron interaction. We show that, at low electronic density, the proximity to the Wigner crystal reproduces the anomaly in conductance at 0.7G₀. The crucial ingredient of our theory is the fact that the gate voltage acts as a bias controlling the intensity of the umklapp term. At large gate voltages, the umklapp vanishes and we obtain a conducting quantum wire with a perfect conductance. At low gate voltages, the Wigner crystal is pinned by the umklapp term, giving rise to an insulating behavior with vanishing conductance. This crossover pattern has a transition point which can be identified with the anomalous conductance around 0.7G₀. This picture is obtained within the framework of a renormalization group calculation. The conductance static regime is achieved by taking first the limit of finite length and then the limit of zero frequency.     

Robust pulses for high fidelity non-adiabatic geometric gate operations in an off-resonant three-level system

We propose a method to design pulses in a resonant three-level system to enhance the robustness of non-adiabatic geometric gate operations. By optimizing the shape of the pulse envelope, we show that the gate operations are more robust against frequency detuning than they are with Gaussian and square pulses. Our method provides a way to design pulses that can be employed in a system where robustness against frequency variations or inhomogeneous broadening is required, and may be extended to ensure robustness against other physical imperfections such as intensity fluctuations and random noises.     

NOR and NAND gates using two photon absorption in silicon wire waveguide

Ultrafast all-optical NOR gate based on two photon absorption (2PA) process in SOI waveguide is already established. We have designed NAND gate also based on this process with a novel waveguide coupler structure. Power attenuation due to 2PA process and the working of these gates is developed with FDTD simulation. Dominant 2PA process is incorporated in FDTD update equations and it is shown that the influence of high intensity pump pulses on a different frequency continuous probe beam can be utilized to form NOR as well as NAND gates.     

Standing Friedel waves: a quantum probe of electronic states in nanoscale devices

We report a theoretical study of the dynamic response of electrons in a metallic nanowire or a two-dimensional electron gas under a capacitively coupled "spot gate" driven by an ac voltage. A dynamic standing Friedel wave (SFW) is formed near the spot gate and near edges and boundaries, analogous to the static Friedel oscillations near defects. The SFW wavelength is controlled by the ac voltage frequency and the device's Fermi velocity, whereby the latter can be measured. In addition, the SFW amplitude exhibits resonant behavior at driving frequencies that are related to eigenenergy spacings in the device, allowing their direct measurement.     

Current enhancement with alternating gate voltage in the Coulomb-blockade regime of a single-wall carbon nanotube

We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at V_DS=100 mV, 13 MHz of gate voltage (V_p-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube. PACS 61.46.+w; 73.23.Hk; 73.63.Fg; 81.07.De; 85.35.Kt     

石墨烯射频器件研究进展

石墨烯因具有优良的电学特性,在半导体行业中受到广泛关注,特别因其具有超薄的结构和极高的载流子迁移率,为解决短沟道效应提供了可能,并且在高速电子领域具有应用前景.近年来,使用石墨烯作为沟道材料制备射频晶体管及射频电路是发挥石墨烯材料优势的一个重要研究方向.制造高性能的射频器件,首先要制备出高性能的石墨烯材料.在金属衬底上沉积均匀的单层石墨烯材料或者在绝缘衬底上外延生长单层、双层石墨烯材料都是获得高质量石墨烯材料的常用方法.器件结构及工艺流程的设计也是提升晶体管射频性能的重要因素,多指栅结构、T型栅结构、埋栅结构以及自对准工艺的发展能够有效改善石墨烯射频晶体管的截止频率及最大振荡频率.石墨烯晶体管独特的电学特性使得其除了可以构造与其他半导体材料电路相似的射频电路结构,还可以构造出功能完整并且结构更加简单的新型射频电路结构.     

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g_m) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f_T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.     

部分耗尽结构绝缘体上硅器件的低频噪声特性

针对部分耗尽结构绝缘体上硅(silicon-on-insulator, SOI)器件低频噪声特性展开实验与理论研究. 实验结果表明, 器件低频噪声主要来源于SiO₂-Si界面附近缺陷态对载流子的俘获与释放过程; 基于此理论可提取前栅和背栅氧化层界面附近缺陷态密度分别为8×10¹⁷ eV^-1·cm^-3和2.76×10¹⁷ eV^-1·cm^-3. 基于电荷隧穿机理, 在考虑隧穿削弱因子、隧穿距离与时间常数之间关系的基础上, 提取了前、背栅氧化层内缺陷态密度随空间的分布情况. 此外, SOI器件沟道电流归一化噪声功率谱密度随沟道长度的增加而线性减小, 这表明器件低频噪声主要来源于沟道的闪烁噪声. 最后, 基于电荷耦合效应, 分析了背栅电压对前栅阈值电压、沟道电流以及沟道电流噪声功率谱密度的影响.     

Two quantum oscillators coupled with a planar radio frequency ion trap

In this scheme,two quantum oscillators in a planar radio frequency ion trap are coupled by the trap electrodes.The ions motional states encode the quantum bits (qubits),and a swap gate could be achieved.Under different conditions of the experiments,the intensity of the coupling between two quantum oscillators and the dissipation of the system are calculated.We compute fidelities for a quantum swap gate and discuss experimental issues.     

Current to frequency conversion in a Josephson circuit

The voltage oscillations which occur in an ideally current-biased Josephson junction were proposed to make a current standard for metrology. We demonstrate similar oscillations in a more complex Josephson circuit derived from the Cooper pair box: the quantronium. When a constant current I is injected in the gate capacitor of this device, oscillations develop at the frequency f(B)=I/2e, with e the electron charge. We detect these oscillations through the sidebands induced at multiples of f(B) in the spectrum of a microwave signal reflected on the circuit, up to currents I exceeding 100 pA. We discuss the potential interest of this current-to-frequency conversion experiment for metrology.     

Ballistic field-effect transistor with negative-effective-mass current carriers in the channel

We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscillation frequency, amplitude, turning on and off).     

Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG–HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper.     

周期性极化铌酸锂波导全光开关特性分析

从理论方面研究了基于和频与差频级联二阶非线性效应的周期性极化铌酸锂波导全光开关的特性,给出了耦合模方程在满足相位匹配条件下小信号近似的解析表达式.用数值方法求解耦合模方程,讨论了相位失配情况下输出的信号光功率与控制光功率的关系.分析了全光开关器件的极化反转光栅周期、晶体温度、控制光波长等参量的容差特性与相互作用长度和晶体温度的关系 关键词： 级联二阶非线性 光开关 准相位匹配 周期性极化铌酸锂