Dissipation-driven quantum phase transitions in a Tomonaga-Luttinger liquid electrostatically coupled to a metallic gate

The dissipation induced by a metallic gate on the low-energy properties of interacting 1D electron liquids is studied. As a function of the distance to the gate, or the electron density in the wire, the system can undergo a quantum phase transition from a Tomonaga-Luttinger liquid to two kinds of dissipative phases, one of them with a finite spatial correlation length. We also define a dual model, which describes an attractive one-dimensional metal with a Josephson coupling to a dirty metallic lead.     

液相射流中中Al元素单双脉冲LIBS研究

为了综合比较单双脉冲激光诱导击穿光谱技术(LIBS)在液体中重金属元素的检测效果,利用自建的液相射流单-双脉冲LIBS技术装置,对AlCl₃水溶液中的Al元素LIBS特性进行测量和分析。实验中使用两台532 nm Nd∶YAG激光器作为激发光源,等离子体辐射信号通过光谱仪和ICCD进行采集。实验研究了单脉冲下Al(396.15 nm)发射谱线的谱线强度随激光能量、ICCD门延时、门宽之间的变化关系,获得了最优化实验参数激光能量为50 mJ,ICCD门延迟为1 200 ns,门宽为150 ns。在相同的实验条件下,实验考察了Al(369.15 nm)发射谱线的谱线强度随双脉冲之间的延时,激光总能量,ICCD门延时的变化关系,获得了最优化实验参数为两双脉冲之间的延时为1 000 ns,激光总能量为50 mJ,ICCD门延时为1 100 ns。单脉冲和双脉冲条件下获得重金属Al的LIBS检测限分别为26.79和10.80 ppm,双脉冲LIBS技术使元素检测限下降2倍多。实验结果表明双脉冲可以提升LIBS技术的探测灵敏度,为LIBS技术应用于水体中重金属快速检测提供了依据。     

Suppression of the unconventional metallic behavior by gate voltage in MWNT device

We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. Power-law behaviors in temperature and bias-dependent conductance, disappeared when a high gate voltage was applied, and conductance became temperature- and bias independent. This indicates a gate-induced transformation from the unconventional to the normal metallic states in MWNT.     

Reprint of : Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.     

Absorbing/emitting phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.     

Field emission of carbon nanotube array with normal-gate cold cathode

A hexagon pitch carbon nanotube (CNT) array vertical to the normal gate of cold cathode field emission displayer (FED) is simulated by solving the Laplace equation. The calculated results show that the normal gate causes the electric field around the CNT tops to be concentrated and emission electron beam become a column. The field enhancement factor and the emission current intensity step up greatly compared with those of diode structure. Emission current density increases rapidly with the decrease of normal-gate aperture. The gate voltage exerts a critical influence on the emission current.     

Field emission performances of CNTs bundles array

The field emission performances of normal-gate cold cathode, which is composed of different multi-wall carbon nanotubes (MWCNTs) bundles array are calculated. The device parameters such as the arrangement of bundles, array density, gate location, gate voltage, anode voltages and anode–cathode distance affect the field emission properties, which is discussed in detail. The results reveal that the hexagon bundles array needs a lower threshold voltage than square array to reach high field enhancement factor and large emission current density. The emission current density is two orders larger than that of the oxide emitter. The optimal bundles array densities of hexagon and square array to get field enhancement factor are 0.0063 and 0.00375 μm⁻², respectively. Meanwhile, the field emission performances are impacted critically by gate location and gate voltage. Field emission properties changed little while the anode–cathode distance varies within tens of micrometers, which increases the process-friendliness of CNTs field emission devices.     

Localized multiphoton emission of femtosecond electron pulses from metal nanotips

Intense multiphoton electron emission is observed from sharp (approximately 20 nm radius) metallic tips illuminated with weak 100-pJ, 7-fs light pulses. Local field enhancement, evidenced by concurrent nonlinear light generation, confines the emission to the tip apex. Electrons are emitted from a highly excited nonequilibrium carrier distribution, resulting in a marked change of the absolute electron flux and its dependence on optical power with the tip bias voltage. The strong optical nonlinearity of the electron emission allows us to image the local optical field near a metallic nanostructure with a spatial resolution of a few tens of nanometers in a novel tip-enhanced electron emission microscope.     

Influence of charge deposition in a field-emission display panel

Field-emission displays (FEDs) have been studied intensively in recent years as a candidate for flat-display panels in the future. In a FED, electrons emit from field emitters. Some electrons may impinge on the insulator surface between cathode and gate electrodes and cause charging of that surface because the yield of secondary electron emission is usually not equal to one. The charging of the insulator walls between cathode and gate electrodes is one of the important factors influencing the performance of a FED. In this paper, a simulation program is used to calculate this charge deposition, electric field distribution and electron trajectories. From the change of the electric field upon charge deposition in the triode region, it is shown that the insulator surface is negatively charged at a low gate voltage, e.g. 20 V. However, positive charge is deposited when the gate voltage is high, e.g. 100 V. The simulations also show that the emission current will increase even further after coating the dielectric with a thin film of a material with a high-secondary emission coefficient such as MgO. If a cone-shaped dielectric aperture is used in a triode, the emission current will decrease after charge deposition. However, the focus performance of the electron beam is improving in this case.     

Coulomb blockade of a noisy metallic box: a realization of Bose-Fermi Kondo models

We focus on a metallic quantum dot coupled to a reservoir of electrons through a single-mode point contact and capacitively connected to a back gate, by including that the gate voltage can exhibit noise; this will occur when connecting the gate lead to a transmission line with a finite impedance. The voltage fluctuations at the back gate can be described through a Caldeira-Leggett model of harmonic oscillators. For weak tunneling between the lead and the dot, exploiting the anisotropic Bose-Fermi spin model, we show that zero-point fluctuations of the environment can markedly alter the Matveev Kondo fixed point leading to an amplification of the charge quantization phenomenon.     

Field emission properties of silicon field emitter arrays with volcano-shaped gate structure

Field emission properties of silicon field emitter arrays (Si-FEAs) with sputtered gate structures were described and analyzed about two different tip structures surrounded by volcano-shaped gates. The resulted field emission characteristics showed that some of the emitted electrons are diverted to the gate structure because of the asymmetrical geometry of fabricated Si-FEAs with volcano-shaped gate structures. However, although the gate structures of fabricated FEAs had fragile and non-uniform edged shapes as a result of the shadow effect during sputtering and lift-off process in ultrasonic bath, it was possible to obtain stable field emission properties as a result of electrical aging effects on the edge of the non-uniform gate electrode as well as the surface of silicon tip after repeated measurements. From the Fowler–Nordheim (F–N) plots and F–N equations, it was confirmed that the field enhancement factor was abruptly changed through the electrical aging and was more influenced in case of the volcano-shaped lateral tip structure.     

Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.     

Optically gated resonant emission of single quantum dots

We report on the resonant emission in coherently driven single semiconductor quantum dots. We demonstrate that an ultraweak nonresonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically gated quantum dots systematically behave as ideal two-level systems in both regimes of coherent and incoherent resonant emission.     

The influence of chemically active gas on the light emission of metallic targets bombarded by positive ions

The introduction of oxygen in the vicinity of a metallic target surface, bombarded with positive argon ions of twenty kiloelectron-volts, increases the number of sputtered atoms in the excited state. This phenomenon of exaltation, very sensitive in the case of nickel and aluminum, is much less marked in the case of molybdenum. Moreover, the emission of excited particles, coming from the beam's ions, is not modified. A quantum-mechanical model of a kinetic emission process, which permits the interpretation of the clean metallic target's emission phenomena, seems insufficient to explain all of the results obtained in the presence of oxygen. In this last case one can therefore use a thermodynamic model in which excited metallic particles can be formed directly by chemical surface reactions of neutralization or reduction.     

High-speed scanning photocurrent imaging techniques on nanoscale devices

We report the characterization of individual carbon nanotube and Si nanowire field-effect transistors through high-speed scanning photocurrent microscopy with a scanning speed of 1 frame/s and a photocurrent sensitivity of less than 1 pA. This enables us to record photocurrent images that are free from hysteresis effects that modify the field configurations applied by the gate bias voltage. We can clearly resolve the photocurrent signals with polarity inversion near the metallic contacts under gate bias conditions which cause severe hysteresis effects in the nanowire devices. We also studied the dynamics of the hysteresis effects for different gate bias configurations. This high-speed photocurrent imaging technique is particularly useful for obtaining two-dimensional, localized optoelectronic characteristics and their correlation with overall device performance without encountering undesired dynamic responses.     

Renormalization of the Cyclotron Frequency in a Screened Two-Dimensional Electron System with Strong Retardation

JETP Letters - Resonant microwave absorption by two-dimensional electron systems based on GaAs/AlGaAs heterostructures with a metallic back gate is investigated. The regime where the velocity of a...     

A novel gate structure in large diagonal size printable CNT-FED

In the normal gate CNT-FED, the gate electrode is used to modulate and address the electron beam. Some electrons may bombard on the gate electrode, thus the luminant efficiency of CNT-FED decreases. This paper proposes a new gate structure, which is the metal mesh with cone funnels. MgO film and MgF₂ film are vaporized on the surface of the mesh and the funnels. When the primary electrons bombard on the gate electrode with initial energy, the secondary electrons and backscatters are generated. As results, more electrons can pass through the gate electrode and land on the anode. Consequently, the brightness of the novel triode structure CNT-FED can increase obviously. In the paper, we show the results of numerical simulation of the secondary electron emission process with Monte Carlo method. Some CNT-FED devices with the new type of gate structure are fabricated. The surface of the gate electrode is coated with MgO, MgF₂ and SiO₂ film, respectively. The results of emission experiments are also shown in this paper.     

Electronic border states in mesoscopic metallic cavities: their contribution to the orbital magnetism

We present a study of persistent currents (PC) in mesoscopic two-dimensional metallic cavities. The cavity is simulated with a gate potential that constrains the electrons to be in the regions of the sample. Varying the profile of the gate potential we can change the size and the geometry of the sample. We study non-single connected samples for which the typical current, I_typ, is substantially enhanced at half-filling, due to the existence of electronic border states near the Fermi level for this filling. These states have a large angular momentum and its response to the magnetic external flux is paramagnetic. We discuss the relevance of our results in relation to the, as yet, unexplained discrepancies between measurements of large values of PC in mesoscopic metallic rings and theoretical predictions.     

Fano Factor in Strained Graphene Nanoribbon Nanodevices

We investigate the Fano factor in a strained armchair and zigzag graphene nanoribbon nanodevice under the effect of ac fheld in a wide range of frequencies at different temperatures(10 K-70 K). This nanodevice is modeled as follows: a graphene nanoribbon is connected to two metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the graphene nanoribbon channel. The substances at the graphene nanoribbon/metal contact are controlled by the back gate. The photon-assisted tunneling probability is deduced by solving the Dirac eigenvalue differential equation in which the Fano factor is expressed in terms of this tunneling probability. The results show that for the investigated nanodevice, the Fano factor decreases as the frequency of the induced ac fheld increases, while it increases as the temperature increases.In general, the Fano factors for both strained armchair and zigzag graphene nanoribbons are different. This is due to the effect of the uniaxial strain. It is shown that the band structure parameters of graphene nanoribbons at the energy gap, the C-C bond length, the hopping integral, the Fermi energy and the width are modulated by uniaxial strain. This research gives us a promise of the present nanodevice being used for digital nanoelectronics and sensors.     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.