Development of rf plasma sputtered Al2O3-TiO2 multilayer broad band antireflecting coatings and its correlation with plasma parameters

TiO₂/Al₂O₃/TiO₂/Al₂O₃ multilayer structures were obtained at different oxygen:argon gas ratios of 20:80, 30:70, 50:50 and 60:40 sccm and constant rf power of 200 W using reactive magnetron sputtering. Grain size and elemental distribution in the films were studied from AFM image and XPS spectra respectively. The deposited grain size increased with increasing oxygen:argon gas ratio. The optical band gap, refractive index, extinction coefficient were calculated from UV-vis transmittance and reflectance spectra. It was observed that the value of refractive index, extinction coefficient and band gap increased with increasing oxygen. These variations are due to the defects levels generated by the heterostructure and explained by the PL spectrum. The antireflecting (AR) efficiency of the films was estimated from the reflectance spectra of the films. Broad band antireflecting coating for the visible range was achieved by varying oxygen content in the film. The plasma chemistry controlled the antireflecting property by the interface interdiffusion of atoms during layer transition in multilayer deposition. The in situ investigation of the plasma chemistry was performed using optical emission spectroscopy. The plasma parameters were estimated and correlated with the characteristics of the films.     

Infrared suppression by hybrid EUV multilayer--IR etalon structures

We have developed a multilayer mirror for extreme UV (EUV) radiation (13.5?nm), which has near-zero reflectance for IR line radiation (10.6?μm). The EUV reflecting multilayer is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the IR radiation allowed the integration of the multilayer coating in a resonant quarter-wave structure for 10.6?μm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the IR radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5?nm, with a bandwidth at FWHM being 0.284?nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.     

Fast acquisition of reflectance spectra using wide spectral lines

We analyze a recently proposed technique for fast acquisition of the two-dimensional (2D) spatial distribution of reflectance spectra to figure out how much its ability of distinguishing almost similar spectra declines with increase of the spectral line bandwidth of the light source. This analysis was carried out using the experimentally measured reflectance spectra of four metameric samples and simulating the system response to an illumination by spectral lines with variable bandwidth. It was shown that the metameric samples are distinguishable even when the bandwidth of illuminating lines is 20–30 nm. A wider bandwidth allows implementation of simultaneous illumination of an object that leads to a diminution of the acquisition time of 2D-multispectral images due to both faster operation in the parallel mode of Light-emitting diodes (LEDs) switching and higher output power.     

单发实验测量软X射线多层膜反射镜反射特性

 提出了一种单发实验测量软X射线波段多层膜反射镜反射特性的简易方法。实验采用激光等离子体软X射线源作为光源,用平焦场光栅谱仪分光,在光路中引入掠入射镜以消除高级次谱的影响,用软X光CCD记录,在一发激光打靶实验中,测量了设计中心波长为13.9 nm的Mo/Si多层膜反射镜的反射特性。     

激光入射角度对薄膜热场分布影响的数值分析

在多层介质薄膜中，激光的入射方式是影响薄膜抗损伤能力的关键因素之一.提出了一种模拟锥角高斯光入射多层介质薄膜后电场和热场分布的方法.该方法能够分析薄膜中高斯光各个角谱分量叠加形成的电场分布，进而得到由于薄膜本征吸收产生的热量沉积以及薄膜内部的温度场分布.针对中心波长为4.3 μm的中红外高反膜进行了分析，给出了高反膜系的温升峰值随激光入射角度和偏振态的变化.结果表明：对于s偏振光，斜入射时膜系的最高温升峰值高于垂直入射峰值，而p光的结果则相反.此种模拟方法克服了原有方法对激光入射角度的限制，较好地反映出斜入射情况下激光偏振态对薄膜损伤的影响. 关键词： 多层介质薄膜 高斯光 热过程 数值分析     

Local-field effects in reflectance anisotropy spectra of the (001) surface of gallium arsenide

Characteristic reflectance anisotropy spectra of the naturally oxidized (001) surfaces of GaAs undoped crystals and Ga_0.7Al_0.3As epitaxial films are measured in the energy range 1.5–5.7 eV. The spectra are interpreted in the framework of the microscopic model proposed for a GaAs(001)/oxide interface and the reflectance anisotropy (difference) theory developed for a multilayer medium with a monolayer of atomic dipoles located near one of the interfaces. The anisotropy of dipole polarizability and the anisotropy of the plane lattice formed by dipoles are taken into account within the unified Green function approach of classical electrodynamics. A good agreement between the measured and calculated reflectance anisotropy spectra of the oxidized GaAs(001) surfaces shows that the local field effects at the semiconductor-oxide interface make the main contribution to these spectra.     

Amplitude-phase reflectance spectra of amorphous silicon-based Bragg structures

Amplitude-phase spectra of light reflection from distributed Bragg reflectors and Fabry-Pérot microcavities based on a-Si: H/a-SiO_x: H thin films have been studied. The frequency dependence of the phase difference between the amplitude p-and s-light reflection coefficients within the photonic band gap is measured. The phase spectrum exhibits predominantly a monotonic, close-to-linear frequency behavior, except for spectral regions near the stop band edges and near the singularities related to the microcavity eigenmodes. The experimental spectra are compared with theoretical calculations based on the transfer matrix method and approximate analytical relations. A method based on analyzing amplitude-phase reflectance spectra is proposed for structural characterization of multilayer microcavity systems.     

On the angular dependence of gaps in 1-D Si/SiO2 periodic structures

A multilayer of silicon and silicon dioxide was used to study the angular dependence of reflectance maxima originating from interference and bulk optical properties. Silicon dioxide has a lattice resonance in the infrared causing an interval of high reflectance for wavelengths around 9 μm. The multilayer was designed such that the interference maxima do not overlap/interact with the material related reflectance maximum. In this way the different angular behavior for the two types of reflectance maxima can be studied simultaneously. Experimental and calculated reflectance spectra for s- and p-polarized light for angles of incidence between 0° and 90° collected for every 5° are presented. The reflectance features caused by interference generally move to shorter wavelengths with increasing angle of incidence, and the materials related peak is widened for (s-polarized light) and excitation of the longitudinal modes was observed for p-polarized light.     

低温分子束外延生长的GaMnAs反射光谱的低能振荡现象

通过傅里叶变换红外光谱和光调制反射光谱技术测量了不同Mn含量的低温分子束外延生长在GaAs衬底上的GaMnAs样品的反射光谱.在低于Ga(Mn)As带边的红外反射光谱和光调制反射光谱上观测到低能振荡现象.通过分析振荡产生的原因并使用双层界面反射模型拟合了红外反射光谱的低能振荡过程,拟合结果与实验相符.研究表明,反射光谱的低能振荡是由于GaMnAs中空穴浓度的变化导致GaMnAs中的折射率发生变化,GaMnAs与衬底GaAs之间的折射率差导致了不同Mn含量的GaMnAs材料的反射谱的低能振荡现象.测量了不同 关键词： GaMnAs 反射光谱 空穴浓度 折射率     

Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.     

Realization of a three-functional-layer negative-index photonic metamaterial

We modify a recently theoretically suggested multilayer negative-index photonic metamaterial design and fabricate corresponding structures with up to three functional layers (seven actual layers) for the first time to our knowledge. Measured transmittance and reflectance spectra agree well with theory.     

Ultraviolet photoemission and 4d core reflectance spectra of SmSe(100)

Ultraviolet photoemission (UPS) and inner core reflectance spectra have been measured on SmSe(100) surface with synchrotron radiation. Besides the multiplet structures observed in UPS spectra for the Sm 4f, 5p and 5s excitations, the reflectance spectrum has revealed a multiplet structure associated with the Sm 4d→4f excitation. Each band of the UPS spectra has shown remarkably different hν dependence and the resonant behavior of the cross section. Sm 4f- and Se 4p-derived valence band features are unambiguously identified by the angle resolved UPS.     

Analysis of restriction factors of widening diffraction bandwidth of multilayer dielectric grating

In order to design a multilayer dielectric grating with wide-bandwidth diffraction spectrum, the restriction factors of both the reflection bandwidth of multilayer dielectric high-reflectivity mirror and the guided-mode resonance phenomenon are studied in detail. The reflection characteristics of high-reflectivity mirror in zeroth and 1st transmitted diffraction orders are quantitatively evaluated. It is found that the reflection bandwidth of high-reflectivity mirror in 1st transmitted diffraction order, which determines the final diffraction bandwidth of multilayer dielectric grating, is evidently compressed. Furthermore, it is demonstrated that the reducing of grating period is an effective approach to the elimination of guided mode resonance over a required broad band range both spectrally and angularly. In addition, the expressions for calculating the maximum period ensuring no guided mode resonance in the required bandwidth are derived. Finally, two high-efficiency pulse-compression gratings with broad-band are presented.     

Multilayer structures with optical characteristics controlled by a magnetic field

The consideration of the gyromagnetic properties of multilayer structures with one or more magnetically active components shows that the application of a magnetic field to such structures imparts magnetically controlled optical properties to them. The effect of a magnetic field on the reflection coefficient of the multilayer structures manifests itself in two phenomena: a shift of the maximum of the spectral curve of the resonant reflection coefficient and a change (increase or decrease) in the bandwidth of this curve. The more pronounced of these two effects is the change in the bandwidth of the spectral curve of the reflection coefficient. The orientation (transverse or longitudinal) of the magnetic field applied to the multilayer structure determines important specific features of these effects. Calculation performed for two types of multilayer structures (Y₃Fe₅O₁₂?Gd₃Ga₅O₁₂ and Y₃Fe₅O₁₂?SiO₂) shows the possibility of their practical use, for example, in fiber optics.     

HfO2中ZrO2含量对266nm HfO2/SiO2多层膜反射率的影响

用两种不同纯度的HfO2材料与同一纯度的SiO2材料组合,沉积Λ／4规整膜系(HL)^11H形成266nm的紫外反射镜,发现反射率相差0．7％左右。用X光电子能谱法分析了高反膜中表层HfO2中的成分,发现ZrO2的含量相差一个数量级左右。为确定形成这种差别的原因,用辉光放电质谱法测定了这两种HfO2材料中锆(Zr)及其钛(Ti)、铁(Fe)的含量,发现Zr是其中的最主要的杂质,两种HfO2材料中Zr含量有一个数量级的差别。说明在266nm波段,HfO2中ZrO2的含量会对HfO2／SiO2高反膜的反射率造成影响。根据HfO2单层膜的光谱曲线,推算出了这两种材料的消光系数的差别,并用Tfcalc膜系设计软件进行理论和镀制结果的模拟,得到与实验测试一致的结果。     

Dispersive mirrors designed with mixed metal multilayer dielectric stacks

A different approach to construct dispersive mirrors (DMs) for ultrafast applications is proposed based on the high reflectivity and constant phase property of a novel metal in ultrawide spectral band. A 200- nm bandwidth DM, a high dispersive DM, and a complementary DM are designed with mixed metal multilayer dielectric stacks. The results show that the mixed-metal multilayer dielectric DMs (MMDMs) have much less layers and total thickness compared with an all-dielectric DM under the case of comparable performance. Such an approach will save manufacturing time and remarkably improve the stress of the DM.     

金属平板前等离子体的电磁波功率反射系数计算分析

把金属平板前非均匀等离子体层简化为分层均匀的平板模型，采用等效输入阻抗方法，计算大气或真空边界入射波的总功率反射系数，分析其影响因素.计算结果表明：电子数密度大 小、等离子体层厚度、入射波频率和入射角是功率反射系数的主要影响因素，适当调整其中任何一个，都可以达到降低功率反射系数的效果.在低频段，电子数密度的分布对功率反射系数几乎没有影响；在高频段，电子数密度的分布对功率反射系数有影响.等离子体厚度、入射波频率、电子数密度分布对功率反射系数的影响几乎与波的极化方向无关. 关键词： 等离子体 电磁波 传输     

不同含水量黑土土壤光谱反射率半经验模型构建

土壤含水量的变化情况与时空分布对热量平衡、农业墒情等具有显著的影响。利用反射率光谱信息反演土壤含水量的研究,可为实现土壤含水量速测、揭示土壤含水量时空变异规律提供科学依据。构建不同含水量黑土土壤反射率光谱半经验模型,深入探究土壤重量含水量与反射率光谱的关系。 制备了12种不同湿度的土壤样品。 采用ASD Field Spec Pro 3地物波谱仪对制备的不同湿度梯度的黑土土壤进行反射率光谱测量。 利用菲涅耳反射率建立土壤表面反射模型;在以往的研究中,Kubelka-Munk (KM)模型中的漫反射率R_∞通常被视为对于给定材料和照明波长的常数或需要反演的参数。通过研究发现,漫反射率R_∞不仅与材料和波长有关,还与土壤含水量相关。利用与土壤含水量相关的吸收系数及散射系数描述了土壤含水量与漫反射率R_∞的关系,并基于KM理论对体散射分量进行建模;进而构建不同含水量黑土土壤反射率光谱半经验模型。 根据实际测量数据选用最小二乘算法对模型参数进行反演,并通过分析反演参数简化模型。最后,将未参与建模的不同含水量梯度的数据代入模型中,验证模型的有效性。结果表明：对比不同含水量土壤反射率光谱的模拟值与实测值在400～2 400 nm波段范围内的模拟精度发现,含水量为200 g·kg-1的土壤反射率光谱的均方根误差最大,为0.008,含水量为40 g·kg-1的土壤反射率光谱的均方根误差最小,为0.000 6,不同含水量下土壤样品反射率光谱的均方根误差的均值是0.005 1。在400～2 400 nm波段范围内,不同波长下黑土土壤反射率光谱的预测均方根误差基本低于0.008,1 920 nm波长处的预测均方根误差最小,为0.002 062。采集长春地区的土壤检验模型的可靠性,配制15个不同含水量样品并对其进行反射率光谱测量。选取9个样品数据用于建模,6个样品数据用于验证。结果表明：在400～2 400 nm波段范围内,不同波长下的长春土壤反射率光谱的预测均方根误差基本低于0.015,525 nm波长处的预测均方根误差最小,为0.000 922 5。综上所述,所建立的模型具有很高的预测精度,可很好地适用于不同含水量黑土土壤反射率光谱的模拟。     

Super Narrow Bandpass Filter Using Fractal Cantor Structures

In this paper, we present a new photonic crystal structure, which is composed of fractal Cantor multilayer with a defect embedded in its middle. Optical transmission matrix method is used to calculating the transmittance and reflectance. Compared with general Cantor multilayer, we find the new structure has wider stopband and shows a super narrow band in the middle of wider stopband. It can be served as a super narrow bandpass filter. The pass band obtained can be less than 0.6nm near the infrared 1530 nm. The optical transmission is the center wavelength is higher than 99 %. This means a very low insert loss. It is more superior to other kind narrow band filters. This kind of photonic crystal super narrow band optical filter may find applications in super dense wavelength division multiplexing for optical communications and precise optical measurement.     

Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is characterized by atomic force microscopy (AFM), room temperature photoluminescence (PL), Raman spectroscopy and optical reflectance measurements. AFM imaging reveals that the porous GaAs layer is consisted of a pillar-like of few nm in width distributed between more-reduced size nanostructures. In addition to the “infrared” PL band of un-etched GaAs, a strong “green” PL band is observed in the etched sample. The broad visible PL band of a high-energy (3.82 eV) excitation is found to compose of two PL band attributed to excitons confinement in two different sizes distribution of GaAs nanocrystals. The quantum confinement effects in GaAs nanocrystallites is also evidenced from Raman spectroscopy through the pronounced appearance of the transverse optical (TO) phonon line in the spectra of the porous sample. Porosity-induced a significant reduction of the specular reflection, in the spectral range (400–800 nm), is also demonstrated.