不同浓度掺铊碘化铯(CsI:Tl)晶体的光谱特性

对含有不同浓度Tl+激活剂的CsI:Tl晶体进行了光吸收光谱和荧光光谱测量,以研究CsI:Tl的光学吸收和发光特性.实验观察到,在紫外吸收谱中包含有三个特征结构峰297,273和247 nm,高浓度Tl+晶体的吸收结构峰比低浓度的峰明显加宽,其中A吸收峰297 nm红移20 nm.室温下不同能量紫外光激发的荧光带形状相同,不受Tl+浓度影响.分析认为,晶体中掺杂Tl+后品格畸变是导致吸收峰或荧光激发峰变化的主要原因,但对发光带峰宽和峰位影响不明显.     

CsI(Tl)晶体的辐照损伤研究

本文报道CsI(Tl)晶体辐照损伤的实验研究,结果表明,CsI(Tl)晶体具有辐照损伤效应.对被辐照损伤过的CsI(Tl)晶体作恢复研究.表明在200℃下加热4小时,可使辐照操作的CsI(Tl)晶体得到恢复.     

X光高分辨探测用CsI(Tl)晶体的蒙特卡罗模拟研究

提出了一种基于CsI(Tl)闪烁晶体和面阵CCD器件、采用光纤和光纤面板进行光耦合及传输、以扇形束线阵扫描方式实现对X光高分辨探测的方案。CsI(Tl)晶体的尺寸大小将直接影响到晶体的发光效率及X光的高分辨探测,据此开展了蒙特卡罗模拟研究。模拟研究了X射线能量、X射线源到探测晶体的距离(源距)、CsI(Tl)晶体的厚度与X射线能量分布、全能峰效率与CsI(Tl)闪烁晶体转换效率之间的关系。结果表明,当X射线能量为120~450 keV,CsI(Tl)晶体尺寸厚度为0~1.5 cm变化时,全能峰效率的变化范围为31.34~96.74%,CsI(Tl)闪烁晶体的转换效率的变化范围为12.8~97.43%。可见,X射线的能量及CsI(Tl)闪烁晶体尺寸的厚度,是决定X光高分辨探测的重要参量,这对优化X光高分辨探测用CsI(Tl)晶体的尺寸设计具有一定的参考价值。     

γ-辐照对纯Y_2SiO_5和Eu~(3+)∶Y_2SiO_5晶体光谱性能的影响

研究了γ-辐照前后纯Y2SiO5和Eu3+掺杂的Y2SiO5晶体吸收光谱的变化,辐照后,未退火和氢气退火的纯Y2SiO5晶体在260~270 nm和320 nm波段产生了附加吸收峰,分别是由F心和O-心的吸收引起的;经过空气退火的纯YSO晶体中,由于消除了氧空位,因此辐照后没有出现色心吸收峰。在Eu3+∶Y2SiO5晶体中,不但有相同的F心和O-心吸收峰,而且还有Eu2+离子在300 nm和390 nm的吸收峰。随着辐照剂量的增加,色心附加吸收峰增强。空气退火能减少Eu3+∶Y2SiO5晶体中的色心,而氢气退火能增加色心。     

2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙的光谱特性

合成了一种新型的蓝光发射材料2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙,并利用红外光谱、X射线衍射谱、DSC热分析、UV-vis吸收谱、荧光激发光谱和荧光发射光谱研究了其结构、晶态、热稳定性以及光学特性,分析了它的能态结构和发光机理。结果表明,2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙的热稳定性较高,是一种多晶粉末发光材料,禁带宽度2.93eV,在紫外光的激发下,固态荧光发射峰在449.7nm处,在乙醇溶液体系中的荧光发射峰在491nm处,均为蓝色荧光,色纯度高,荧光量子效率高,其荧光发射主要来源于长波吸收带,最大波长吸收带对荧光发射贡献最大。     

掺铋BaF2晶体的制备及其近红外发光研究

通过温度梯度法制备了Bi₂O₃:BaF₂以及BiF₃:BaF₂晶体.在Bi₂O₃:BaF₂晶体中观察到了发光峰位于961 nm,半高宽202 nm的超宽带红外发光.在BiF₃:BaF₂晶体中检测到Bi²⁺和Bi³⁺可见区的发光,但是没有观察到红外发光.通过γ射线辐照实现了BiF₃:BaF₂晶体的近红外发光, 发光峰位于1135 nm,半高宽192 nm.讨论了Bi₂O₃和BiF₃掺杂BaF₂晶体的红外发光的机理. 关键词： 近红外发光 铋 氟化钡晶体 γ辐照     

X射线辐照后BaFC1中缺陷性质的研究

未掺Eu2+的BaFCl粉末样品在80K下经X射线辐照后,在不同的温度条件下(从80K副273K),用580nm的光波激励样品时观测到310nm和380nm的发光峰.经分析认为,样品经X射线辐照后,在晶体中形成两种卤素离子的F-H''心对.当用F心吸收带的光波激励样品时,两种F—H心对衰变成相应的自陷激子态并复合发光.310nm和380nm分别对应于F-离子和Cl-离子的自陷激子的发光,并且它们的发光强度强烈地依赖于温度的变化。     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

γ射线辐照与O2退火对Bi∶CdWO4单晶体光谱性能的影响

用500和800℃,在氧气下,对掺Bi钨酸镉晶体进行热退火处理,测定了处理后晶体的吸收光谱与发射光谱。随退火处理温度的升高晶体的吸收强度降低,吸收边带发生蓝移。在373与980nm的光激发下,分别观察到发光中心为528nm的CdWO4晶体本征发光与发光中心为1 078nm的Bi 5+发光。晶体样品通过高温氧气处理,发光中心为528nm的荧光带强度增强,但发光中心为1 078nm的荧光带强度变弱。这可能是由于氧退火使Bi 5+转化成Bi 3+所致。经退火处理后,晶体的颜色逐渐变浅,透光率明显提高,这是由于晶体中氧空位减少所致。经γ射线辐照处理后,528nm处的发光增强,而1 078nm处的发光减弱,这可能是由于γ射线辐照后导致Bi 5+变成Bi 3+。     

国产CsI(TI)晶体辐照损伤实验研究

研究了CsI(Tl)晶体在1.3GeV e^－束形成的电磁辐射场和⁶⁰Co γ辐射场照射后的辐照损伤,测量了晶体光输出和透射率的变化,以及辐射损伤的自然恢复和加热恢复效应.     

Vacuum ultraviolet spectroscopy of U:LiF, Cu, and U:NaF, Cu crystals

Luminescence and excitation spectra of doped LiF and NaF crystals are studied by time-resolved optical and luminescent vacuum ultraviolet (VUV) spectroscopy (2–40 eV energy range, T=10–295 K) with the use of synchrotron radiation of the X-ray and the VUV ranges and pulsed electron beams. Spectral kinetic parameters of luminescence and energies of excited states of U⁶⁺ ions are determined. The dominant role of the electron-hole mechanism for energy transfer to impurity centers is established. The effect of multiplication of electronic excitations is clearly manifested for E > 25 eV in NaF:U, Cu crystals and determines their high scintillation yield (137% relative to Tl:CsI when detected in the current regime).     

Comparisons of spectral properties of CsI:T1 crystals with various Tl(+)-doped concentrations

Absorption Spectra and Photoluminescence (PL) spectra of CsI: T1 crystals with various T1+-concentrations were measured for absorption and luminescent research in CsI: T1. Their UV absorption spectra contained three peaks at 297, 273 and 247 nm. The experiments were demonstrated that the peaks in the high T(1+)-concentration CsI: T1 crystals are broader than ones in the low T(1+)-concentration crystals and their absorption A-peak shift by 20 nm, but their PL with UV excitations are similar. It was suggested that lattice distortions in the high T1+-concentration CsI: T1 lead to the changes in absorption or fluorescence excitation peaks, but no changes in the fluorescence band widths and locations at room temperature.     

Electron excitations in LiB3O5 crystals with defects: Low-temperature time-resolved luminescence VUV spectroscopy

The dynamics of electron excitations and luminescence of LiB₃O₅ (LBO) single crystals was studied using low-temperature luminescence vacuum ultraviolet spectroscopy with a subnanosecond time resolution under photoexcitation with synchrotron radiation. The kinetics of the photoluminescence (PL) decay, the time-resolved PL emission spectra, and the time-resolved PL excitation spectra of LBO were measured at 7 and 290 K, respectively. The PL emission bands peaking at 2.7 eV and 3.3 eV were attributed to the radiative transitions of electronic excitations connected with lattice defects of LBO. The intrinsic PL emission bands at 3.6 and 4.2 eV were associated with the radiative annihilation of two kinds of self-trapped electron excitations in LBO. The processes responsible for the formation of localized electron excitations in LBO were discussed and compared with those taking place in wide-gap oxides.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Low-temperature time-resolved vacuum UV spectroscopy of potassium pentaborate crystals

For the first time, subnanosecond time resolution is attained in the low-temperature (at 7 K) measurements of the photoluminescence (PL) spectra (2–6 eV), the PL excitation spectra (4–32 eV), the PL kinetics, and the reflection spectra (4–21 eV) of undoped potassium pentaborate KB₅O₈·4H₂O (KB5) crystals under selective photoexcitation by synchrotron radiation. The PL peaks associated with the intrinsic defects of the KB5 lattice are detected. The PL bands resulting from radiative annihilation of the localized and self-localized electron excitations are singled out; these excitations are most efficiently photogenerated at the fundamental absorption edge in the region where the free exciton formation is expected. The difference between the PL spectra of the fast and slow components is revealed. An effective low-temperature energy transport over the KB5 hydrogen sublattice is deduced from a drop in efficiency of PL excitation in the interband-transition region as a result of nonradiative energy loss. Long-term vacuum UV irradiation of a KB5 crystal at 7 K gives rise to defects in the hydrogen sublattice, which facilitate localization of the electron excitations and reduce the effective length of their diffusion. This leads to a decrease in the nonradiative energy loss, thus enhancing the efficiency of the PL photoexcitation in the band-to-band transition region.     

Luminescence and electronic excitations in crystals K<Subscript>2</Subscript>Al<Subscript>2</Subscript>B<Subscript>2</Subscript>O<Subscript>7</Subscript> with defects

This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL) decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K; the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation and decay of electronic excitations in K₂Al₂B₂O₇ crystals have been discussed.     

Low-temperature time-resolved vacuum ultraviolet spectroscopy of self-trapped excitons in KH<Subscript>2</Subscript> PO<Subscript>4</Subscript> crystals

A complex investigation of the dynamics of electronic excitations in potassium dihydrophosphate (KDP) crystals is performed by low-temperature time-resolved vacuum ultraviolet optical luminescence spectroscopy with subnanosecond time resolution and with selective photoexcitation by synchrotron radiation. For KDP crystals, data on the kinetics of the photoluminescence (PL) decay, time-resolved PL spectra (2–6.2 eV), and time-resolved excitation PL spectra (4–24 eV) at 10 K were obtained for the first time. The intrinsic character of the PL of KDP in the vicinity of 5.2 eV, which is caused by the radiative annihilation of self-trapped excitons (STEs), is ascertained; σ and π bands in the luminescence spectra of the STEs, which are due to singlet and triplet radiative transitions, are resolved; and the shift of the σ band with respect to the π band in the spectra of the STEs is explained.     

Luminescence of LaBr3: Ce,Hf crystals under photon excitation in the ultraviolet,vacuum ultraviolet,and X-ray ranges

This study has been carried out using synchrotron radiation, time-resolved luminescence ultraviolet and vacuum ultraviolet spectroscopy, optical absorption spectroscopy, and thermal activation spectroscopy. It has been found that, in scintillation spectrometric crystals LaBr₃: Ce,Hf characterized by a low hygroscopicity, along with Ce³⁺ centers in regular lattice sites, there are Ce³⁺ centers located in the vicinity of the defects of the crystal structure. It has also been found that the studied crystals exhibit photoluminescence (PL) of new point defects responsible for a broad band at wavelengths of 500–600 nm in the PL spectra. The minimum energy of interband transitions in LaBr₃ is estimated as E _g ～ 6.2 eV. The effect of multiplication of electronic excitations has been observed in the range of PL excitation energies higher than 13 eV (more than 2E _g ). Thermal activation studies have revealed channels of electronic excitation energy transfer to Ce³⁺ impurity centers.     

Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F₂, 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ=1.2±0.1 ns for the range of temperatures 16-150 K. The blue band decay possesses fast and slow components. The fast component of the blue band decay is about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant equal to 17±1 μs within the temperature range 16-200 K. deviations from exponential decay were observed as well and explained by influence of nearest interstitial OH groups on the luminescence center. The UV band was not detected for F₂ laser excitation. For the case of KrF laser only a structure less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination process with two components having characteristic time about 1 and 60 μs. For blue band recombination luminescence decay is lasting to ms range of time with power law decay ∼t⁻¹.For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K. such an effect does not take place in the case of photoexcitation with lasers. The activation energies for both cases are different as well. Average value of that is 0.03±0.01 eV for the case of X-ray luminescence and it is 0.15±0.05 eV for the case of PL. So, the processes of thermal quenching are different for these kinds of excitation and, probably, are related to interaction of the luminescence center with OH groups.Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on destruction of luminescent defects.The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen deficient silica glass and induced by radiation luminescence of α-quartz crystal presumes similar nature of centers in those materials.     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.