Cd1-xZnxTe在高压下的电学性质、状态方程与相变

 在金刚石压砧装置上,采用电阻和电容测量方法研究了Cd_1-xZn_xTe（x=0.04）在室温下、17 GPa内的电阻、电容与压力的关系。实验结果表明,它在3.1 GPa左右和5 GPa左右发生了两次电子结构相变,而在3.1 GPa以上和5.7 GPa左右发生了两次晶体结构相变。同时,还在活塞-圆筒测量装置上研究了Cd_1-xZn_xTe（x=0.04）在室温下、4.5 GPa内的p-V关系。实验结果表明它在3.8 GPa左右发生了相变。本工作还给出了它在相变前后的状态方程,以及它的Grüneisen参数γ₀、体弹模量B₀ 与B₀ 的压力导数B₀′。     

偏硼酸钡低温相晶体在高压下的电学性质与相变

 在金刚石压砧装置上，采用电容和电阻测量方法研究了偏硼酸钡低温相晶体（β-BaB₂O₄）在室温下和16 GPa内的电容、电阻与压力的关系。实验结果表明，它的电容在2.1、4.6、6.4、8、9.5、10.7 GPa左右都有一个突变。这说明β-BaB₂O₄内部的结构状态在这些压力下都发生了变化，可能发生了相变。还发现β-BaB₂O₄样品在较高压力下已发生了非晶化转变，而且是不可逆的，在卸压后被保留下来。这个非晶化转变的压力大约在11~12 GPa。     

高压下Sr2FeMoO6的电学性质与相变

 采用电阻和电容测量方法,在金刚石压砧装置上研究了Sr₂FeMoO₆多晶粉末在室温下和20 GPa内的电阻、电容和压力的关系。实验结果表明,样品的电阻和电容在约2.1 GPa的压力下都产生了突然的变化,发生了金属化相变。这些变化可能是由高压下Sr₂FeMoO₆的电子结构相变引起的。     

名义成分为La1.0Ca2.0Mn2O7锰氧化物的压阻效应

 利用低温高压电阻原位测量装置（自箝铍青铜活塞-圆筒式压砧），在0~1.05 GPa静水压力范围内，对以层状钙钛矿结构为主相、名义成分为La_1.0Ca_2.0Mn₂O₇的锰氧化物样品进行了压阻效应研究。实验观测到异常的压阻效应。在低温5~150 K范围内，压力为0.55 GPa时，样品呈现出高达40%的压阻效应，而且，金属-绝缘体相变温度在低压范围内随压力的增加而增加，但随着压力的进一步增加而减小。     

1.3μm场助TE光阴极In1-xGaxAsyP1-y/InP的能带计算及外延层的设计

本文首先简述了1.3μm场助TE光阴极InP(衬底)/In_1-xGa_xAs_yP_1-y(光吸收层)/InP(发射层)/Ag/CsO的工作原理,并对其能带结构进行了计算,得到了In_1-xGa_xAs_yP_1-y(光吸收层)/InP(发射层)的势垒高度、掺杂、InP发射层厚度、组份、渐变区宽度,偏压及耗尽层宽度间的定量关系。并由此出发,对光阴极各参数的设计进行了分析讨论。     

高压下LiB3O5晶体-非晶体相变的研究

 采用X射线粉末衍射和同步辐射能散X射线衍射技术，对LiB₃O₅（LBO）晶体进行了压致非晶化相变的研究，压力达45.1 GPa。实验结果表明，LBO存在两个中间相变，压力分别为5 GPa和15.8 GPa。而当压力增加到25~31.6 GPa时，LBO出现非晶态，这个非晶化相变是不可逆的。     

Spin Splitting in In0.53Ga0.47As/InP Heterostructures

Spin-orbit coupling in a gate-controlled In_0.53Ga_0.47As/InP quantum well isinvestigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In_0.53Ga_0.47As.     

BaCuO2.5在高压下的状态方程与电学性质

 在活塞-圆筒式高压装置上研究了BaCuO_2.5在4.5 GPa内的p-V关系,给出了其状态方程、Grüneisen参数γ₀、零压体弹模量B₀以及B₀的压力导数B′₀。并在金刚石压砧装置（DAC）上测量了样品的电阻、电容随压力变化的关系,结果表明在0~20 GPa内没有发生相变。     

Pb0.8Sn0.2Te晶体高压相变的X射线衍射研究

 利用X射线粉末衍射方法，在室温高压下观察到了Pb_0.8Sn_0.2Te晶体的压致相变现象。实验是在DAC高压装置上完成的，压力从零逐步加至25.2 GPa。在常温常压下，Pb_0.8Sn_0.2Te具有fcc结构。从实验结果看到，有两个结构相变存在，分别在压力为6.1 GPa和14.9 GPa附近。我们认为，前一个结构相变与Pb_0.8Sn_0.2Te晶体的金属化有密切关系。实验分别从10.0 GPa和25.2 GPa降压至零，发现相变均是可逆的。     

巨磁阻材料Sr2CrWO6高压下的结构稳定性和电学特性

 采用金刚石压砧高压装置，研究了双钙钛矿结构化合物Sr₂CrWO₆在室温下、34.5 GPa压力内的同步辐射X射线衍射谱，发现在9.6 GPa的压力点样品的结构有所变化。结合室温下20 GPa内电阻和电容随压力的变化，证明样品在9 GPa附近发生了晶体结构相变，而在2~5 GPa的压力范围内样品发生了电子结构相变。     

Effect of GaInP intermediate barrier in 1.3 μm compressive-strained GaInAsP/GaInAsP multiple-quantum-wells laser diodes

In this article, 1.3 μm Ga_0.27In_0.63As_0.67P_0.33/Ga_0.11In_0.89As_0.24P_0.76 compressive-strain multiple-quantum-wells (CS-MQWs) with Ga_0.09In_0.91P intermediate barrier (IB) laser diodes (LDs) have been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The photoluminescence (PL) measurement indicates that the CS-MQWs with 20 Å Ga_0.09In_0.91P IB have the narrowest full width at half maximum (FWHM) of 43.9 meV. The 55-μm-width metal contact and 900-μm cavity length as-cleaved broad-area LDs with the Ga_0.09In_0.91P IB have the better performance than those of LDs without Ga_0.09In_0.91P IB, including a threshold current density of 0.86 kA/cm², a differential quantum efficiency of 25.6%, an internal quantum efficiency of 50%, and an internal optical loss of 25 cm⁻¹. Finally, the GaInAsP/GaInAsP CS-MQWs with the Ga_0.09In_0.91P IB LDs were processed as 4-μm-width ridge and an as-cleaved 600-μm-cavity length. It exhibits a threshold current of 38.5 mA, a slope efficiency of 0.16 W/A, a characteristic temperature of 80.5 K, a maximum operating temperature up to 80 °C without power saturation, and a red-shift rate of 0.38 nm/°C, and a relaxation frequency response of 5.8 GHz. The 3-dB bandwidth for the LDs with GaInP IB is as high as 9 GHz without considering the damping factor and coupling loss.     

Recombination in tensile-strained In0.3Ga0.7As quantum well on InP

Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In_0.3Ga_0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In_0.3Ga_0.7As on In_0.53Ga_0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity.     

Simulation of Transferred Electron Devices with Linearly Graded Composition of 3-5 Threefold Semiconductor in Active Zone

Two-level, displaced-maxwellian approach model of transfer electron effect in variband semiconductors has been created. With the help of the model research of TED based on variband semiconductor compounds In _x(z) Ga _1–x(z) As, Al _x(z) As, InP _1–x(z) Ga _1–x(z) As _x(z) has been done. Composition of the semiconductors x(z) in the active zone of TED depends linearly on the coordinate. It has been proved that work of TED with variband active zone is defined by dependence of relaxation frequency of electrons concentration in -valley upon coordinate. If the frequency is decreasing function dipole domains transit in the diode, but if the frequency is not decreasing function, so accumulation layers transit in the diode. Critical generation frequencies, power and frequencies characteristics of TED's based on semiconductor compounds In _x(z) Ga _1–x(z) As, Al _x(z) As, InP _1–x(z) Ga _1–x(z) As _x(z) have been defined.     

GaInP材料生长及其性质研究

用常压MOCVD在半绝缘GaAs衬底上生长了Ga_xIn_1-xP(x=0.476～0.52)外延层,对外延层进行了X光双晶衍射、Hall和光致发光(PL)测试.77K下电子迁移率达3300cm²/V.s(浓度为1.4×10¹⁶cm^-3).载流子浓度随生长温度升高,随Ⅴ/Ⅲ比的增大而降低,并提出P空位(V_p)是自由载流子的一个重要来源,17KPL谱中,Ga_0.5In_0.5P(Tg=650℃,Ⅴ/Ⅲ=70)的峰能为1.828eV,半峰宽为19meV.另外,在1.849eV处还有一较弱的峰,GaInP峰能和其计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关.     

Flexible Cu（In,Ga）Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process

The electrical and structural properties of polycrystalline Cu（In, Ga）Se2 films grown on polyimide （PI） substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra （XRD）, scanning electron microscopy （SEM） and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the （In0.68Ga0.32）2Se3 and Cu（In0.7Ga0.3）2Se. It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of （In0.68Ga0.32）2Se3, Cu2-xSe and Cu（In0.7Ga0.3）2Se. High net carrier concentration and sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400℃, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated （active area 0.16cm^2）.     

Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well

Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.     

Internal second harmonic generation in InGaAsP DH lasers

Self induced second harmonic generation (SHG) accompanying 1.3 μm lasing radiation was first observed in fundamental transverse mode InGaAsP DH lasers. Sum frequency generation by two lasing longitudinal modes was observed, which has a conversion factor of four times greater than that for SHG by a single lasing longitudinal mode and predicts the simultaneous laser oscillation of the several longitudinal modes. The estimated second order nonlinear susceptibility of In_0.76Ga_0.24As_0.55 P_0.45 was about 5 × 10^-20 in rotationalized MKS unit, which is at least an order of magnitude greater than that of GaAs.     

Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well （MQW） ultraviolet light-emltting diodes （UV-LEDs） at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.     

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Influence of Ga(Al)As substrates on surface morphology of InGaAs quantum dots and critical thickness of In_0.5Ga_0.5As film grown by molecular beam epitaxy is investigated. The In_0.5Ga_0.5As quantum dots are grown on (001) surfaces of GaAs and Al_0.25Ga_0.75 A at 450 °C, scanning tunneling microscope images show that the size of quantum dots varied slightly for 10 ML of In_0.5Ga_0.5As grown on GaAs and Al_0.25Ga_0.75As surfaces. Reflection high energy electron diffraction (RHEED) is used to monitor the growth of 4 monolayers (ML) In_0.5Ga_0.5As on Al_0.25Ga_0.75As and GaAs surfaces during deposition. The critical thickness is theoretically calculated by adding energy caused by surface roughness and heat from substrate. The calculations show that the critical thickness of In_0.5Ga_0.5As grown on GaAs and Al_0.25Ga_0.75As are 3.2 ML and 3.8 ML, respectively. The theoretical calculation agrees with the experimental results.     

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

In the present paper, a comprehensive computer simulation is used to determine optimal structure of the InP-based GaInNAs quantum-well (QW) active region and to investigate a possibility of reaching room-temperature (RT) continuous-wave (CW) single-fundamental-mode 2.33-μm operation of vertical-cavity surface-emitting laser (VCSEL) with such an active region. From among various considered InP-based active regions, the one with the Ga_0.15In_0.85N_0.015As_0.985/Al_0.138Ga_0.332In_0.530As QW, i.e. with barriers lattice matched to InP, seems to be optimal for the 2.33-μm VCSEL performance. Its QW material is chosen for the required long-wavelength emission whereas its barrier is expected to ensure promising laser performance at room and higher temperatures. The latter is mostly connected with the QW conduction band offset equal in the above active region to as much as 413 meV, which is much larger than those of its possible lattice matched to InP competitors, e.g. 276 meV for the Ga_0.47In_0.53As barrier and 346 meV for the Ga_0.327In_0.673As_0.71P_0.29 one. Our simulation reveals that from among various considered structures, a VCSEL with a 4-μm-diameter tunnel junction and two 6-nm Ga_0.15In_0.85N_0.015As_0.985/Al_0.138Ga_0.332In_0.530As QWs exhibits the lowest calculated threshold current of 0.88 mA. Its promising RT CW performance suggests that it may represent a very interesting alternative to GaSb-based VCSELs.