Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots |
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| Institution: | 1. Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University Guiyang, 550025, China;2. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;3. Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;4. School of Information, Guizhou University of Finance and Economics, Guiyang 550025, China |
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| Abstract: | Influence of Ga(Al)As substrates on surface morphology of InGaAs quantum dots and critical thickness of In0.5Ga0.5As film grown by molecular beam epitaxy is investigated. The In0.5Ga0.5As quantum dots are grown on (001) surfaces of GaAs and Al0.25Ga0.75 A at 450 °C, scanning tunneling microscope images show that the size of quantum dots varied slightly for 10 ML of In0.5Ga0.5As grown on GaAs and Al0.25Ga0.75As surfaces. Reflection high energy electron diffraction (RHEED) is used to monitor the growth of 4 monolayers (ML) In0.5Ga0.5As on Al0.25Ga0.75As and GaAs surfaces during deposition. The critical thickness is theoretically calculated by adding energy caused by surface roughness and heat from substrate. The calculations show that the critical thickness of In0.5Ga0.5As grown on GaAs and Al0.25Ga0.75As are 3.2 ML and 3.8 ML, respectively. The theoretical calculation agrees with the experimental results. |
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| Keywords: | Quantum dots Critical thickness |
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