镓原子集团结构的第一性原理分子动力学研究

用第一性原理分子动力学方法和模拟退火技术研究了镓原子集团(n≤8)的平衡结构,并与可得到的实验数据进行了比较。随着原子数的增加,发现在n=5时结构发生了从二维到三维的变化。所有集团可看作为由镓分子和原子链两种结构单元所构成,这两种结构单元分别出现在固相α-Ga和亚稳相β-Ga中。 关键词：     

Diffusion of an Extra Ga Atom in GaAs(001)(2*4) Rich-As Surface

采用键序势计算了单个镓原子在GaAs(001) fi2(2￡4)富砷表面的迁移的势能面,发现了一些低能量的吸附位,这些吸附位与实验观测的结果一致. 同时也发现了多个可能的迁移路径,并根据迁移路径上的相对能量指出单个镓原子更优先在表面上平行于砷二聚体的两条路径上迁移. 这一结果可由吸附的镓原子所导致的应变予以理解. 此外,有限温度下单个镓原子迁移的动力学模拟结果支持了所计算的势能面.     

镓原子的Stark能级结构

里德堡原子的Stark效应在偶极偶极相互作用、量子信息和量子调控等方面具有潜在的应用前景. 本文首先根据零场时镓原子的能级数据, 通过非线性拟合方法获得了镓原子各态的量子亏损, 仔细分析了量子亏损随主量子数的变化特征; 然后利用Numerov算法计算了镓原子的径向波函数; 最后采用矩阵对角化方法, 数值计算了镓原子高里德堡态在场强范围F=0-3000 V·cm^{- 1}时n=7和n=18附近的Stark能级结构. 结果显示在主量子数n=7多重态以上的能级结构中, (n+1)P态的能级接近并大于nD态的能级, 在n=7多重态以下的能级结构中, (n+1)P态的能级接近并小于nD态的能级. 这一现象不同于通常的碱金属原子的Stark结构, 论文对该现象及其他Stark能级结构特征进行了详细分析, 为相关研究工作提供了重要参考价值.     

PbTiO3价电子结构和铁电性的经验电子理论计算

应用固体与分子经验电子理论(EET)计算了铁电材料PbTiO3的价电子结构,根据得到的价电子结构,提出计算原子有效价电子数的近似公式和计算自发极化强度的方法,并计算了PbTiO3在铁电相的自发极化,计算结果与实验数据进行了对比分析,指出该经验理论用于研究铁电现象的可行性和有效性.     

锑与铟的解析原子波函数

E.C.Ridley曾计算了In~(3+)与Sb~(3+)离子的电子波函数;以作为固体电子结构研究的起点。但是,当以化学键的图象来研究固体时,则需要知道组成固体的原子的价电子的波函数。为了便利于计算,它们最好是解析形式的。在这篇短文中,报告了我们对In与Sb的原子波函数的计算结果。     

铝土矿中微量镓的分析方法进展

综述了近几年国内铝土矿中镓分析方法的研究进展,叙述了用于微量镓分析测定的光度法、伏安法、原子吸收光谱法、电感耦合等离子体-原子发射光谱法、电感耦合等离子体-质谱法、X射线荧光光谱法等分析方法,对方法的优缺点进行了评述,并对今后微量镓分析测定方法进行了展望.     

GaN中与C和O有关的杂质能级第一性原理计算

用局域密度泛函线性丸盒轨道大型超原胞方法(32个原子),对纯纤锌矿结构的GaN用调节计算参数(如原子球与“空球”的占空比)在自洽条件下使Eg的计算值(323eV)接近实验值(35eV).然后以原子替代方式自洽计算杂质能级在Eg中的相对位置.模拟计算了六角结构GaN中自然缺陷以及与C和O有关的杂质能级位置,包括其复合物.计算结果表明,单个缺陷如镓空位VGa、氮空位VN、氧代替氮ON、炭代替氮CN、炭代替镓CGa等与已有的计算结果基本一致.计算结果表明杂质复合物会导致单个杂质能级位置的相对变化.计算了CNON,CGaCN,CNOV和CGaVGa,其中CNON分别具有深受主与浅施主的特征,是导致GaN黄光的一种可能的结构. 关键词： GaN 杂质能级 电子结构     

PbTiO3价电子结构和铁电性的经验电子理论计算

应用固体与分子经验电子理论（EET）计算了铁电材料PbTiO3的价电子结构，根据得到的价电子结构，提出计算原子有效价电子数的近似公式和计算自发极化强度的方法，并计算了PbTiO3在铁电相的自发极化，计算结果与实验数据进行了对比分析，指出该经验理论用于研究铁电现象的可行性和有效性．     

石墨炉原子吸收法测定镓的原子化机理及基体改进剂增敏机理的研究

本文给出了在不同炉管和不同平台炉以及采用硝酸镍和抗坏血酸作基体改进剂条件下镓的原子化温度曲线。提出了石墨炉原子吸收法测定镓时原子化机理,探讨了基体增敏作用的机理。     

解联立方程组法校正火焰原子吸收光谱干扰

本文用解联立方程组法校正了火焰原子吸收分析中镓４０３．３０ｎｍ谱线对锰４０３．３１ｎｍ谱线的重叠干扰。实验结果表明：解联立方程组法是解决原子吸收光谱干扰的可能方法，该法在应用于合成的锰和镓测定中结果令人感到满意。     

碳纳米管中α-Ga和β-Ga纳米线相对稳定性的理论研究

采用密度泛函理论研究了碳纳米管中填充的金属镓纳米线的稳定性.结果表明,无论是在碳纳米管内的受限空间,还是在自由空间,较大尺寸的β-Ga纳米线都要比α-Ga纳米线稳定.通过对镓纳米线的平均能量和镓纳米线与碳纳米管间的结合能的分析,揭示了实验中观测到碳纳米管中金属镓会存在β-Ga相而无α-Ga相的物理原因. 关键词： 碳纳米管 纳米线 密度泛函理论     

Bonding in the metallic molecular solid α-Gallium

ABSTRACT

Solid, liquid and alloyed phases of gallium play a role in a variety of important technological applications. While many of the gallium phases involved in these applications are metallic, some have been proposed or are known to contain covalently bound Ga dimers. Thus, understanding the nature of bonding in Ga is crucial to the development of Ga-based materials. The solid phase of gallium at ambient conditions, α-Ga, is metallic and composed of molecular dimers, and can serve as a testing ground for studying gallium bonding with electronic structure calculations. We use density functional theory-based molecular dynamics simulations in conjunction with maximally localised Wannier functions to examine the nature of chemical bonding in α-Ga. We propose a geometric criterion for defining various bonding environments, which enables the quantification of covalent and weak bonds in solid gallium. We additionally connect the bonding structure of α-Ga to its phonon density of states and discuss similarities and differences with diatomic halogen crystals.     

Peculiarities of gallium crystallization in confined geometry

The freezing and melting phase transitions for gallium embedded into a porous glass with a pore size of about 8 nm were studied using acoustic, NMR, and x-ray techniques. It was shown that the broadened solidification and melting transitions upon deep cooling up to complete freezing at 165 K were due to the formation of β-Ga within pores. The offset of confined β-Ga melting was lowered by about 21 K compared to the bulk β-Ga melting point. Both melting and freezing in pores were irreversible. The fulfillment of some special thermal conditions led to gallium crystallization into other modifications. The role of heterogeneous crystallization in freezing of confined gallium is discussed.     

Acoustic studies of melting and crystallization of indium-gallium alloy in porous glass

Temperature dependences of the velocity of the longitudinal ultrasonic waves in a nanocomposite on the basis of porous glass filled with gallium-indium alloy have been measured. Acoustic anomalies due to crystallization and melting of the alloy in nanopores have been revealed for the complete and partial cooling-heating cycles. A two-step temperature hysteresis loop between the curves of the velocity change upon cooling and heating has been found, the existence of which is related to the formation in pores of two types of mixtures, with α- and β-Ga. Stabilization of β-Ga in nanopores has been observed. It was shown that the conditions of confined geometry lead to a shift to low temperature of the melting regions for both mixtures in comparison with the regions of the coexistence of the liquid and solid phases in bulk alloy.     

Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长

为获得高质量的β-Ga2O3薄膜,将c面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga2O3/GaN/蓝宝石模板,进而在模板上利用金属有机化学气相沉积(MOCVD)工艺进行了β-Ga2O3薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明,该方法获得的β-Ga2O3薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件,得到了质量较高的β-Ga2O3薄膜。与蓝宝石上或GaN薄膜上异质外延得到的β-Ga2O3薄膜相比,薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程,发现该方法成功地将β-Ga2O3薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga2O3/GaN/蓝宝石模板上的同质外延,有效地减小了β-Ga2O3薄膜和蓝宝石、GaN之间较大的晶格失配和热失配,有利于提高β-Ga2O3薄膜的晶体质量。     

Synthesis and characterization of silicon-doped gallium oxide nanowires for optoelectronic UV applications

Silicon-doped gallium oxide nanowires have been synthesized by thermal methods using either a mixture of gallium oxide and silicon powders or metallic gallium with silicon powder as precursor materials. The growth mechanism has been found to be a vapour–liquid–solid (VLS) or vapour–solid (VS) process, respectively, depending on the precursor used. In the former case, silicon oxide droplets at the end of the nanowires have been observed. Their possible role during the growth of the nanostructures is discussed. Structural and morphological characterization of the doped nanowires has been performed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show a high crystalline quality and a uniform distribution of silicon along the nanowires. Room temperature cathodoluminescence (CL) in the SEM shows that slight variations in the composed UV–blue emission band appear due to the influence of Si impurities in the oxygen vacancy defect structure.     

Metastable phases in Gallium-Indium eutectic alloy particles and their size dependence

In this paper, submicrometer-sized Ga-In eutectic alloy particles were dispersed into polymethylmethacrylate (PMMA) matrix by ultrasonic vibration and sedimentation method. The solidification and melting processes of Ga-In eutectic alloy particles were studied by differential scanning calorimeter (DSC). Four endothermal peaks with the onset temperature located at 16, −11, −22, and −27 °C were observed in DSC heating curves, which corresponded to the melting process of the stable Ga-In phase α-Ga(In) and three metastable phases of β-Ga(In), δ-Ga(In) and γ-Ga(In), respectively. The stable phase α-Ga(In) can only be formed when the size of alloy particle was larger than 0.58 μm. Conversely, metastable phases β-Ga(In), δ-Ga(In) and γ-Ga(In) are mainly formed. The result shows that phase structures in Ga-In eutectic alloy are size dependent.     

Solubility of gallium in tin in the solid state

Conclusions It has been shown by X-ray diffraction and metallographic investigation that a solid solution of gallium in tin is formed when liquid gallium is placed on the surface of solid tin or when a tin-gallium alloy is produced artifically by mixing the metals in the liquid state. The solid solution grains are not etched by some reagents in the same way as the grains of tin, and the microhardness of the solid solution is 42 ± ± 8 kg/mm² compared with 12 ± 2 kg/mm² for pure tin. Calculations on 24 X-ray reflections showed that the lattice constants of the tin decreased when the solid solution was formed: Constanta decreased from 5.818 to 5.777 Å, i.e., by 0.70%, and constant c decreased from 3.183 to 3.164 Å, i.e., by 0.60%. The direction of the changes in the lattice constants agree well with the cyrstallographic and chemical data on the ionic radii of tin and gallium.In conclusion the author wishes to express his gratitude to E. D. Shchukin, A. V. Pertsov, and N. V. Pertsov for contributing to the discussion of the results and to L. L. Krapivin for help in carrying out the experiments.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究（英文）

β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用.用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外-可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响.退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°.退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强.表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主.     

Peculiarities of the interaction of polycrystalline aluminum with aqueous solutions of gallium

We study the effect of gallium-containing aqueous solutions on polycrystalline aluminum. The procedure for kinetic studies of the selected system is described. It is found that in the reaction of polycrystalline aluminum with gallium-containing aqueous solutions, gallium penetrates along the aluminum grain boundaries, which, upon the application of external stress, leads to failure of the sample. It is found that gallium can penetrate along the aluminum grain boundaries both in the liquid and solid state; the rates of penetration of gallium in the liquid and solid states are determined.