Penning阱中离子运动的分析

根据Penning离子阱结构及电磁场分布特点,列出阱内离子运动方程并进行求解,对其中沿z轴运动和在xy平面上的运动进行详细分析,最后得到比荷为m/q的离子在Penning阱内的运动为沿磁场方向的简谐振动、绕磁感线旋转的回旋运动和垂直于z轴及径向绕z轴的漂移运动的叠加.     

Paul阱中离子运动及稳定性分析

Paul离子阱由于没有外加磁场所引起的塞曼效应的影响,已成为离子存储及研究离子的重要装置.根据在实验中所采用的Paul离子阱结构及电场分布特点,列出阱内离子运动方程并进行求解,对其中各种运动进行分析,同时还分析了离子存储稳定性.最后对所作的研究进行总结,得到如下结论:阱中离子的运动为谐振运动、基频微运动和高阶微振动.     

Paul阱中存储离子的研究

根据Paul离子阱结构及电场分布特点,列出阱内离子运动方程并求解,对其中离子运动、硅团簇离子碰撞解离反应进行了分析.     

Paul 阱中共面三离子的量子力学问题

对Paul阱中共面三离子体系作了研究,通过分析其总角动量L=2时的情形单体密度和形状密度,确定了体系的结构和内部运动情况,并与总角动量L=0和经典情形进行了比较。     

激光脉冲作用下囚禁离子的规则与混沌运动

研究驻波型激光脉冲作用下，失谐量足够大时，囚禁于Paul阱中的单离子系统的久期运动.通过分析和数值计算相结合的方法，导出系统的精确解及其描述的时间演化性质，得到系统的规则和混沌运动轨道以及阱频很小时系统进入整体混沌的临界条件,并提出了控制系统共振失稳的方法. 关键词： 激光脉冲 囚禁离子 规则与混沌运动 精确解 稳定性     

反馈方法在离子阱Doppler冷却中的应用研究

离子阱中离子的快速有效冷却在量子信息处理、光频标等领域都有重要的意义.基于Steixner 等提出的量子反馈模型,将反馈方法应用于离子的Doppler冷却.首先理论分析了该模型下离子运动信息的获取方式以及反馈对离子运动的影响,并推导出了存在反馈时离子运动所满足的方程,然后进行了仿真计算. 计算结果表明,利用量子反馈可以明显的提高离子冷却速率.还分析了反馈参数对离子冷却效率的影响. 关键词： 离子阱 Doppler冷却 量子反馈     

线型离子阱中钙离子库仑晶体结构和运动轨迹模拟

离子阱中囚禁的离子在满足库仑耦合条件下,会形成库仑晶体,其结构分布和运动轨迹由离子阱的参数和离子种类决定.本文采用分子动力学模拟软件LAMMPS和(py)LIon程序包,仿真了⁴⁰Ca⁺在线型离子阱中库仑晶体的形成过程,以及不同位置离子的微运动和宏运动轨迹.另外,本文还对混入少量同位素离子(⁴⁴Ca⁺)和氢化钙离子(CaH⁺)后的⁴⁰Ca⁺晶体结构进行了仿真,并对混入前后形成的库仑晶体结构变化进行对比和分析,期望能对离子阱实验中形成的暗离子进行识别和处理.     

Penning阱中离子谱的优化及Hn^＋离子的分析

根据Penning阱存储离子的探测原理,系统分析了阱内离子信号及信号本身的噪声、实验仪器及探测电路的噪声干扰,采用适当的品质因数和电子束流,得到较高信噪比和分辨率的离子谱.并对Hn+离子的形成机制和结构进行了分析.     

线型离子阱中空间电荷效应的理论分析

线型离子阱中的离子在射频场作用下做宏观的久期运动,久期运动频率与实验参数有关.但当离子阱中囚禁大量同种电荷的离子时,空间电荷效应会导致离子间存在相互排斥的库仑力,使离子的运动频率发生漂移.本文通过求解泊松方程计算了空间电荷产生的附加电场的解析表达式,在小振动近似下理论计算了该附加电场对久期运动频率的影响,模拟了不同离子云中心密度下久期频率的漂移,讨论了离子云的数目、温度与实验参数之间的关系.对用离子阱进行的频标实验、碰撞实验和其他方面的研究都具有重要的指导意义.     

非谐射频阱中离子云系统的精确周期解

射频阱中离子云与检测场的相互作用由周期驱动的Duffing方程描述.本文报道了该方程的一个精确的周期解,它描述了阱参数和外场对离子云周期运动的影响.结果表明,在各参变量满足周期解条件时,离子的运动频率为外场频率的三分之一,运动振幅分别与外场频率、振幅以及阱频正相关,与离子阱的非谐参数反相关.     

Measurement of the secular motion frequency and the space charge density in the linear ion trap

This paper reports that a cloud of laser-cooled 40 Ca + is successfully trapped and manipulated in the home-built linear ion trap constructed for quantum information processing (QIP).The frequency of the secular motion and the space charge density of the ion cloud are measured,which help knowing the characteristic of the trapping potential and are the prerequisite of QIP with the trapped ions.     

Octupolar excitation of ion motion in a penning trap

The excitation of the motion of ions in a Penning trap at twice their cyclotron frequency, 2ν _c , by means of an azimuthal octupolar RF field has been studied with the LEBIT facility at the NSCL. The possibility of such an RF octupolar excitation has been verified. Compared to ion excitation at ν _c by means of quadrupolar fields an increased resolving power is observed in the cyclotron resonance curves, which may have important implications for Penning trap mass measurements. Numerical simulations have been used to characterize important properties of this type of excitation in detail and to predict the behavior of the ion motion under realistic conditions. Good agreement with the experimental results is observed.      

Characteristics of electrical field and ion motion in surface-electrode ion traps

In this article, we calculated the potential function of the surface-electrode ion trap (SEIT) by using Green's function method, optimized trap size, obtained the coefficients of the multipoles and analyzed ion trajectories in the RF potential. The optimized SEIT not only increases its trapping well depth by a factor of about 15, but also has relatively good linearity of the field (or large quadrupole component). The current design of SEIT can work well either as the ion guide for ion transmission or as the ion trap for ion confinement. Our research can be used to calculate the potential function in the SEIT with different device parameters, understand ion motions in the traps and optimize instrument performance. The method for calculating potential function can be expanded to planar and halo ion traps.     

Penning阱中Hn+团簇离子的检测与确认

报道了在Penning阱中检测与确认Hn 团簇离子的方法,介绍了离子在阱中的运动,重点分析了离子存储条件、离子的产生与探测、离子信号的放大与检波以及离子谱的分辨.     

Secondary ion emission from Si under nitrogen ion bombardment

The yield and energy distribution of positive secondary ions emitted from Si under N₂⁺ ion bombardment were measured. The obtained mass peaks correspond to three types of secondary ion species, that is, physically sputtered ions (Si⁺, Si₂⁺), chemically sputtered ions (SiN⁺ Si₂N⁺) and doubly charged ions (Si²⁺). The dependence of secondary ion emission on the primary ion energy was studied in a range of 2.0–20.0 keV. The yields of physically and chemically sputtered ions were almost independent of the primary ion energy. The yield of the doubly charged ion strongly depended on the primary ion energy. The energy distribution of secondary ions of the three types showed the same dependence on the primary ion energy. The most probable energy of the distribution increased with the primary ion energy. On the other hand, for the energy distribution curves of sputtered ions, the tail factors N in E^?N were constant and showed a m/e dependence.     

Influence of ion species ratio on grid-enhanced plasma source ion implantation

Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N_2^+ and atomic ions N^+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N_2^+ was considered. Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N^+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.