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785nm便携式光栅外腔可调谐半导体激光器的研制和输出特性
引用本文:王霏,吕雪芹,丁鼎,蔡丽娥.785nm便携式光栅外腔可调谐半导体激光器的研制和输出特性[J].光谱学与光谱分析,2017,37(2).
作者姓名:王霏  吕雪芹  丁鼎  蔡丽娥
作者单位:1. 厦门大学萨本栋微米纳米科学技术研究院,福建 厦门,361005;2. 厦门理工学院光电与通信工程学院,福建 厦门,361024
基金项目:国家自然科学基金项目,福建省自然科学基金计划项目
摘    要:针对移频激发拉曼光谱测试系统的小型化需求,在Littrow结构中,采用商用的785nm大功率激光二极管作为增益器件,构建了一款便携式光栅外腔可调谐半导体激光器。该激光器通过采用一种新型的波长调谐方法,即以改变半导体增益器件相对于准直透镜的水平位置来实现波长的连续调谐,实现了尺寸为140mm×65mm×50mm的小型化结构设计。相比于传统的旋转衍射光栅改变光线在光栅上的入射角来实现波长调谐的方式,该方法有效地缩减了增益器件的平移距离,从而有利于便携式外腔激光器波长的快速宽带调谐。实验结果表明,该激光器具有较宽的波长调谐范围,在340~900mA注入电流下均可实现10nm以上的波长调谐,尤其在900mA大注入电流下,其波长调谐覆盖779.40~791.07nm,调谐范围可达11.67nm,且激射线宽小于0.2nm,单波长输出功率最高可达280mW,放大的自发辐射抑制比大于25dB,呈现出较优异的输出性能,满足移频激发拉曼光谱检测系统对光源的基本要求。此外,该激光器可采用一微型压电陶瓷驱动器来实现波长的电动调谐,实验获得了1.35nm的波长调谐范围,证实了所制785nm便携式光栅外腔可调谐半导体激光器适合作为便携式移频激发拉曼光谱检测系统的光源用于减除原始拉曼光谱中的荧光背景。

关 键 词:便携式  光栅外腔半导体激光器  波长调谐  电动调谐  拉曼光谱

Development and Output Characteristics of 785 nm Portable Grating-Coupled External Cavity Tunable Semiconductor Laser
WANG Fei,L Xue-qin,DING Ding,CAI Li-e.Development and Output Characteristics of 785 nm Portable Grating-Coupled External Cavity Tunable Semiconductor Laser[J].Spectroscopy and Spectral Analysis,2017,37(2).
Authors:WANG Fei  L Xue-qin  DING Ding  CAI Li-e
Institution:WANG Fei,L(U) Xue-qin,DING Ding,CAI Li-e
Abstract:Aiming at the miniaturization requirement of shifted excitation Raman spectrosco py test system,a portable grating-coupled external cavity (EC) tunable semico nductor laser in Littrow configuration is designed and fabricated with a commerc ial 785 nm high-power laser diode as the gain device.By using a new wavelengt h tuning method,aiming to change the position of gain device relative to the collimating lens in the horizontal direction,a miniaturized device with the s ize of 140 mm×65 mm×50 mm is designed.Compared to the traditional wavelength tuning method which is to change the light incident angle by rotating the diffr action grating,this new tuning method reduces the translational distance of se miconductor gain device effectively,thus it is conductive to the fast and broa d wavelength tuning of portable EC laser.The experimental results show that th e EC laser has a wide wavelength tuning range.Under any injection current from340 to 900 mA,a wavelength tuning range of more than 10 nm can be realized.Especially at 900 mA,good performance including a 11.67 nm-wavelength tuning range from 779.40 to 791.07 nm,a less than 0.2 nm-spectral linewidth,an up to 280 mW-output power,and a more than 25 dB-amplified spontaneous emiss ion suppression ratio is presented,which fully meets the basic testing require ments of shifted excitation Raman spectroscopy.Moreover,1.35 nm-electric w avelength tuning range is achieved by applying a mini-piezoelectric actuator.This indicates that the home-made 785 nm portable grating-coupled EC tunable s emiconductor laser is suitable as the light source of portable shifted excitatio n Raman spectroscopy testing system to eliminate the fluorescence background of Ram an spectrum.
Keywords:Portable  Grating-coupled external cavity semiconductor laser  Wavelength tuning  Electric tuning  Raman spectroscopy
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