Dual-Material Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors with Asymmetric Halo

Asymmetrical halo and dual-material gate structure are used in the sub-100 nm surrounding-gate metal oxidesemiconductor field effect transistor （MOSFET） to improve the performance. Using three-region parabolic potential distribution and universal boundary condition, analytical surface potential and threshold voltage models of the novel MOSFET are developed based on the solution of Poisson＇s equation. The performance of the MOS- FET is examined by the analytical models and the 3D numerical device simulator Davinci. It is shown that the novel MOSFET can suppress short channel effect and improve carrier transport efficiency. The derived analytical models agree well with Davinci.     

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric application. TiOxNy exhibits polycrystalline properties after the standard thermal process for MOS device fabrication, showing the preferred orientation at [200]. Superior electrical properties of TiOxNy can be maintained before and after the annealing, probably due to the nitrogen incorporation in the oxide bulk and at the interface. Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.     

Effect of TiO2 Nanotubes on Polymer-Fullerene Bulk Heterojunction Solar Cells

We investigate the photovoltaic properties of hybrid organ/c solar cell based on the blend of poly[2-methoxy-5-（2- ethylhexoxy-l,4-phenylenevinylene） （MEH-PPV）, C60 and titanium dioxide （TiO2） nanotubes. In comparison of the composite devices with different TiO2：[MEH-PPV ＋C60] weight ratios of lw$.% （D1-1）, 2wt.% （D1-2）, 3wt.% （D1-3）, 5wt.% （D1-4）, 10wt.% （D1-5） and 20wt.% （D1-6）, it is found that the device Dl-a exhibits the best performance. The conversion efficiency is improved by a factor of 3 compared with the MEH-PPV：C60 device.     

Electronic Structure and Optical Properties of La-Doped SrTiO3 and Sr2TiO4 by Density Function Theory

The effect of La doping on the electronic structure and optical properties of SrTiO₃ and Sr₂TiO₄ is investigated by the first-principles calculation of plane wave ultrasoft pseudopotential based on the density function theory (DFT). The calculated results reveal that the electron doping in the case of Sr_0.875La_0.125TiO₃ and Sr_1.875La_0.125TiO₄ can be described within the rigid band model. The La³⁺ ions fully acts as electron donors in Sr_0.875La_0.125TiO₃ and Sr_1.875La_0.125TiO₄ systems and the Fermi level shifts further into the conduction bands (CBs) for Sr_1.875La_0.125TiO₄ compared to Sr_0.875La_0.125TiO₃. The two systems exhibit n-type degenerate semiconductor features. At the same time, the density of states (DOS) of the two systems shift towards low energies and the optical band gaps are broadened. The Sr_1.875La_0.125TiO₄ is highly transparent with the transmittance about 90% in the visible range, which is larger than that of Sr_0.875La_0.125TiO₃(85%). The wide band gap, small transition probability and weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the optical transparency of the films...     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.     

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max） stress. It is found that the degradation of device parameters exhibits saturating time dependence under the two stresses. We concentrate on the effect of these two stresses on gate-induced-drain leakage （GIDL） current and stress induced leakage current （SILC）. The characteristics of the GIDL current are used to analyse the damage generated in the gate-to-LDD region during the two stresses. However, the damage generated during the LGVS shows different characteristics from that during Isub stress. SILC is also investigated under the two stresses. It is found experimentally that there is a linear correlation between the degradation of SILC and that of threshold voltage during the two stresses. It is concluded that the mechanism of SILC is due to the combined effect of oxide charge trapping and interface traps for the ultra-short gate length and ultra-thin gate oxide LDD NMOSFETs under the two stresses.     

A Power Interruption Technique for Investigation of Temperature Difference in Stabilized Low Direct-Current Arc Burning in Pure Argon on Atmospheric Pressure

Plasma of argon stabilized arc column, in a current range 3-11 A, is investigated using emission spectrometric diagnostic techniques. Temperatures are evaluated using several methods： argon line to adjacent recombinational continuum intensity ratio, absolute emissivity of argon line, measurement of electron number density, and power interruption. Electron number density is evaluated from absolute emissivity of recombinational continuum. The difference between electron Te and heavy particle Th temperature ranged from 4500 K for 3 A to 2300 K for 11A arc current. By comparing the present with the previously obtained results, using the same arc device but with the introduction of water aerosol, it is concluded that water aerosol reduces the difference Te - Th and brings plasma closer to the partial thermodynamic equilibrium state.     

Synthesis,Characterization of 9, 9＇-Bianthracene and Fabrication of 9, 9＇-Bianthracene Field-Effect Transistors

We synthesize and purify 9, 9＇-bianthracene with the purity up to 96.4%. The electronic and crystallographic structures of 9, 9＇-bianthracene are studied. The results of a joint experimental investigation based on a combination of x-ray diffraction （XRD） spectra, hydrogen nuclear magnetic （HNMR） spectra, infrared absorption （FT-IR） spectra, and mass spectra （MS） of 9, 9＇-bianthracene are obtained. The uniform compact film is observed by an atomic-force microscope （AFM）. Organic field effect transistors （OFETs） with an active layer based on the synthesized 9, 9＇-bianthracene are fabricated for the first time. Its field-effect mobility is as large as 0.067 cm^2 /（V·s） and the on/off ratio is above 5 ×10^4. The result demonstrates that the oligomerization of a small semiconductor molecule is an effective method to develop high-mobility organic semiconductors.     

Finding a Probe for Extracting Information on the Momentum Dependent-Interaction in Heavy Ion Collisions

The effect of momentum-dependent interaction on the kinetic energy spectrum of the neutron-proton ratio （ （n/p）gas）b（ Ek ） for 64Zn ＋64Zn is studied. It is found that （ （n/p）gas）b（ Ek ） sensitively depends on the momentumdependent interaction and weakly on the in-medium nucleon-nucleon cross section and symmetry potential. Therefore （ （n/p）gas）b（ Ek ） is a possible probe for extracting information on the momentum-dependent interaction in heavy ion collisions.     

Adsorption and Reaction of CO on （100） Surface of SrTiO3 by Density Function Theory Calculation

Adsorption and reaction of CO on two possible terminations of SrTiO3 （100） surface are investigated by the first-principles calculation of plane wave ultrasoft pseudopotentiai based on the density function theory. The adsorption energy, Mulliken population analysis, density of states （DOS） and electronic density difference of CO on SrTiO3 （100） surface, which have never been investigated before as far as we know are performed. The calculated results reveal that the Ti-CO orientation is the most stable configuration and the adsorption energy （0.449eV） is quite small. CO molecules adsorb weakly on the SrTiO3 （100） surface, there is predominantly electrostatic attraction between CO and the surface rather than a chemical bonding mechanism.     

Element Substitution Effect in Transition Metal Oxypnictide Re(O1-xFx)TAs (Re=rare earth, T=transition metal)

Different element substitution effects in transition metal oxypnictide Re(O_1-xF_x)TAs, with Re=La, Ce, Nd, Eu, Gd, Tm, T=Fe, Ni, Ru, are studied. Similarto the La- or Ce-based systems, we find that the pure NdOFeAs shows a strong resistivity anomaly near 145K, which is ascribed to the spin-density-wave instability. Electron doping by F increases T_c to about 50K. While in the case of Gd, Tc is reduced below 10K. The tetragonal ZrCuSiAs-type structure could not be formed for Eu or Tm substitution in our preparing process. For the Ni-based case, although both pure and F-doped LaONiAs are superconducting, no superconductivity is found when La is replaced by Ce in both the cases, instead a ferromagnetic ordering transition is likely to form at low temperature in the undoped sample. We also synthesize LaO_1-xF_xRuAs and CeO_1-xF_xRuAs compounds. The metallic behaviour is observed down to 4K.     

Reversibility of Temperature-Induced Liquid Transition in Pb26Sn42Bi32 Melt: Experimental Evidence with Electrical Property

Exploring nature of liquid structures and properties is becoming more interesting in various fundamental and applied fields. With different resorts including the resistivity method, temperature-induced liquid-liquid structure transitions （TI-LLST） have been suggested and verified to occur in some liquid alloys, while the reversibility of TI- LLST has rarely been examined as yet. Unlike some other investigated liquid alloys, here we show that electrical resistivity of Pb26Sn42Bi32 melt exhibit an anomalous change in the first heating run and a reversible change in the following cooling and heating cycles. Taking account of the structural sensitivity of electrical resistivity, the abnormal patterns suggest two sorts of TI-LLST that are irreversible and reversible in the liquid ternary alloy, respectively. This interesting phenomenon together with other growing evidence imply that liquid structures and their change characteristics are multiform and complex.     

Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate

La_0.8Sr_0.2AlO₃ (LSAO) thin films are grown on SrTiO₃ (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.     

First-Principles Study of Li Doping in a Double-Wall Carbon Nanotube

By performing first-principles calculations, we study Li doping in a double-wall carbon nanotube where a （5,0） tube is confined inside a （14,0） tube. There are three possible sites for Li doping and two of them are energetically favorable. The change of energy band structure is closely related to the doping sites and the charge transfer is investigated. Bader charge analysis indicates that Li prefers to donate its electron to the inner （5,0） tube. Moreover, the Li capacity of the system can reach LIC4.75 which makes it a promising candidate for Li-ion battery materials.     

Correlation between Light Emissions from Amorphous-Si：H/SiO2 and nc-Si/SiO2 Multilayers

We investigate the properties of light emission from amorphous-Si：H/SiO2 and nc-Si/SiO2 multilayers （MLs）. The size dependence of light emission is well exhibited when the a-Si：H sublayer thickness is thinner than 4 nm and the interface states are well passlvated by hydrogen. For the nc-Si/Si02 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.     

Influence of Substrate on the Transportation Properties of Co/Alq3 Granular Films on a Si Wafer

A series of Co0.48 （Alq3）0.52 granular films were deposited on silicon substrates using the co-evaporating technique. A crossover of magnetoresistance （MR） from negative to positive was observed in the samples, due to conducting channel switching. The transport properties of samples are greatly influenced by hydrofluoric acid pretreatment, as a result, positive MR decreases drastically and the temperature dependence of resistance changes a lot near room temperature. The result indicates that the native oxide layer plays an important role in the transport mechanism. Moreover, different resistivities of Si substrates influence the current distribution of conducting channels, leading to different transport behaviors accordingly.     

Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation

Temperature-dependent characteristics of SiGeC p-i-n diodes axe analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.     

Theoretical Studies on Defects of Kaolinite in Clays

Using the first-principles methods, we study the formation energeties and charge doping properties of the extrinsic substitutional defects in kaolinite. Especially, we choose Be, Mg, Ca, Fe, Cr, Mn, Cu, Zn as extrinsic defects to substitute for Al atoms. By systematically calculating the impurity formation energies and transition energy levels, we find that all group-Ⅱ defects introduce the relative shallow transition energy levels in kaolinite. Among them, MgAl has the shallowest transition energy level at 0.08 eV above the valence band maximum. The transition- elemental defects FeAl, CrAl, and MnAl are found to have relative low formation energies, suggesting their easy formation in kaolinite under natural surrounding conditions. Our calculations show that the defects CuAl and ZnAl have the high formation energies and deep transition energy levels, which exclude the possibility of their formation in natural kaolinite.