分散良好的二氧化锡纳米团簇制备以及离子液体诱导金属绝缘相变调控研究（英文）

本文利用气相纳米团簇设备实现SnO_2纳米团簇的可控制备.高分辨透射电子显微镜用来分析SnO_2纳米团簇形貌及微观结构,结果表明制备的SnO_2纳米团簇分散良好,尺寸均匀(5～7 nm).通过门电压控制的离子液体实现对SnO_2纳米团簇金属绝缘转变的调控.结合第一性原理,从氧空位诱导电子占据角度系统分析了相应的调控机制.     

密排纳米团簇薄膜应变传感器的响应特性及其与团簇覆盖率的相关性

本文通过在PET薄膜上的叉指电极间沉积Pd纳米团簇制备了柔性应变传感器件.传感器通过测量纳米团簇薄膜的电导随PET薄膜形变的变化而产生对应变的响应,不仅具有高的仪表因子,而且具有宽的量程.实验发现,由于密排纳米团簇阵列的电子输运具有渗流特征,造成应变传感器的响应特性与纳米团簇的覆盖率紧密相关.通过控制纳米团簇的沉积过程,制备了由覆盖率接近有效渗流阈值的纳米团簇点阵构成的应变传感器.从最低应变探测限到0.3%应变之间,传感器件具有线性响应且仪表因子高达55.在更高的应变时,仪表因子进一步达到200.纳米团簇薄膜甚至还可以对达到8%应变的巨大形变产生响应,对应的应变因子达到惊人的3500.     

超小金纳米团簇的电催化氧还原性质（英文）

本文合成了含有2～4个Au原子的超小金纳米团簇并测试了其电催化氧还原性能.通过将前驱AuPPh_3Cl暴露在氨水中一个星期制备了超小的金纳米团簇.运用了ESI质谱、X射线精细结构吸收谱、X射线光电子能谱来测试这些超小金纳米团簇,表明这些超小金纳米团簇含有三苯基膦、羟基和吸附氧分子.将这些超小金纳米团簇负载到玻碳电极上,并用循环伏安法和线性伏安法测试其电催化氧还原性能.循环伏安结果表明,这些超小金纳米团簇电催化氧还原反应的起始电势为0.87 V(相对可逆氢电极),转移的电子数为4.     

密排纳米团簇薄膜应变传感器的响应特性及共与团簇覆盖率的相关性（英文）

本文通过在PET薄膜上的叉指电极间沉积Pd纳米团簇制备了柔性应变传感器件.传感器通过测量纳米团簇薄膜的电导随PET薄膜形变的变化而产生对应变的响应,不仅具有高的仪表因子,而且具有宽的量程.实验发现,由于密排纳米团簇阵列的电子输运具有渗流特征,造成应变传感器的响应特性与纳米团簇的覆盖率紧密相关.通过控制纳米团簇的沉积过程,制备了由覆盖率接近有效渗流阈值的纳米团簇点阵构成的应变传感器.从最低应变探测限到0.3%应变之间,传感器件具有线性响应且仪表因子高达55.在更高的应变时,仪表因子进一步达到200.纳米团簇薄膜甚至还可以对达到8%应变的巨大形变产生响应,对应的应变因子达到惊人的3500.     

光子晶体对非晶纳米团簇辐射特性的影响

用有限时域差分法研究了非晶ZnO纳米团簇的辐射频谱,结果显示频谱呈自发辐射的特性. 为了对非晶纳米团簇的辐射输出进行有效的控制和利用,提出了利用光子晶体来控制纳米团簇的自发辐射,使之向所需要的频率内辐射的理论设计;并构想了一种制备简单、成本较低的实现方法,依据这种设想构建了一个二维系统,对其辐射特性进行数值模拟,结果显示光被有效地控制. 为制备可嵌入到集成光路中的、具有良好可加工性能的低阈值微型激光器提供了一条新途径. 关键词： 有限时域差分法 光子晶体 非晶纳米团簇 辐射特性     

离子注入Zn的Si(001)基片热氧化制备纳米ZnO团簇及其生长行为研究

采用离子注入技术将Zn离子注入Si（001）基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO₂非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的（101）衍射峰强度逐渐增强.当热氧化温度高于800 ℃以后,ZnO与SiO₂之间开始发生化学反应形成Zn₂SiO₄. 关键词： ZnO纳米团簇 离子注入 微观结构 形貌分析     

C36团簇自组装的分子动力学研究

提出了利用C36团簇在气相条件下自组装制备新纳米团簇的设想，并利用分子动力学方法模 拟了包括真实氦气氛作用的碳团簇生长过程，发现环境气体温度是影响最后所生成的团簇结 构的关键因素：C36团簇在1000?K到2000?K的温度范围内，自组装形成保持C36线径特征的 蚕茧状新纳米团簇；在高于2000?K的温度下，最后形成的团簇趋于球状. 关键词： 分子动力学模拟 纳米碳团簇     

聚集诱导发光增强型金属纳米团簇在生物医学领域的研究进展

近年来,具有聚集诱导发光(Aggregation-induced emission, AIE)增强性质的金属纳米团簇由于其高光学稳定性和良好的发光性能在生物医学、环境科学等领域展现出广阔的应用前景。然而,当前对于AIE金属纳米团簇的研究还处于起步阶段,其复杂的表面/界面结构和增强发光机理尚不明晰,对其合理的调控制备仍是重要研究挑战之一。本文基于已成功合成的具有高AIE性能金属纳米团簇的研究报道,综述了硫醇修饰的表面修饰机理和策略;主要介绍了金、银、铜几种AIE金属纳米团簇在分析传感及生物医学领域的应用,并对其他配体修饰的铱配合物的AIE特性及其应用进行了论述;最后阐述了对AIE金属纳米团簇研究现状的看法及展望,旨在为AIE金属纳米团簇未来的研究发展提供思路与参考。     

纳米氧化锡负极材料锂化反应机理的原位透射电镜研究

二氧化锡(SnO_2)材料因具有储量丰富、理论容量高、嵌脱锂电位安全等一系列优点,在锂离子电池负极材料研究中受到广泛关注.然而, SnO_2纳米材料在锂化反应过程中的机理,尤其是第一步转化反应是否可逆尚存在争议.本文利用常规水热法成功制备了平均粒径为4.4 nm的SnO_2纳米颗粒,并在透射电子显微镜中构建了微型锂离子电池原型器件,对SnO_2纳米颗粒在充放电过程中的微观形貌和物相演变进行原位表征.实验结果表明, SnO_2纳米颗粒在嵌锂过程中率先生成了纳米尺寸的中间相Sn,随后发生了合金化反应转变为Li_(22)Sn_5相.脱锂反应后, Li_(22)Sn_5相转变为SnO_2.分析认为,纳米晶界阻碍了Sn颗粒的聚集长大,使得Sn和Li_2O能够充分接触,进而使脱锂反应能够完全进行,生成SnO_2.研究结果对于如何提高SnO_2基电极材料可逆比容量和循环性能具有一定的指导意义.     

湿化学法合成Co掺杂ZnO薄膜的微结构及发光特性

采用湿化学法在ITO玻璃衬底上制备了纳米棒结构的Co掺杂ZnO薄膜.XRD结果表明Co掺杂的ZnO没有出现杂相.SEM结果表明掺杂样品是由ZnO纳米棒团簇结构组成,且团簇的密度随着Co掺杂浓度的增大而增大.光致发光光谱表明Co掺杂导致薄膜的带隙发生红移.     

F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

Synthesis and field-emission of aligned SnO2 nanotubes arrays

Aligned tin dioxide (SnO₂) nanotubes have been synthesized by high-frequency inductive heating. Nanotubes with high yield were grown on silicon substrates in less than 5 min, using SnO₂ and graphite as the source powder. Scanning electron microscopy and transmission electron microscopy showed nanotube with diameters from 50 to 100 nm and lengths up to tens of mircrometers. The SnO₂ nanotubes synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.64 V/μm. The samples show good field-emission properties with a fairly stable emission current. This type of SnO₂ nanotubes can be applied as field emitters in displays as well as vacuum electric devices.     

Hydrothermal synthesis and optical characteristics of Eu in Zn2SnO4 nanocrystals

Zn₂SnO₄:Eu³⁺ nanocrystals were one-step synthesized by hydrothermal method for the first time. All the products were systematically characterized by powder X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), electron probe X-ray microanalyzer (EPMA), photoluminescence (PL) and photoluminescent excitation (PLE). The characteristic peak of Eu³⁺-doped in Zn₂SnO₄ nanocrystals was also detected. The luminescent properties of blank and Eu³⁺-doped Zn₂SnO₄ nanocrystals were reported.     

SnO2微纳米材料的合成及其生长机理研究

利用简单的化学气相沉积法,以Sn粉为源材料合成不同形貌的一维SnO₂纳米棒、纳米线和纳米花等纳米结构,并通过减小载气中的氧含量获得新颖的SnO₂亚微米环状结构.通过调节Sn粉的量和载气中的氧含量、升温速率等试验条件,有效实现SnO₂一维纳米结构的控制生长.采用扫描电子显微镜、能谱仪和X射线衍射仪表征产物形貌、成分和物相结构,并探讨了SnO₂微纳米材料的生长机理. 关键词： 2')" href="#">SnO₂ 纳米结构 亚微米环 生长机理     

Effects of interface between SnO2 thin film and Si substrate on growth time

SnO₂ thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO₂ thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ? as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO₂ layer was observed at between the SnO₂ thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film.     

SnO2 nanowires mixed nanodendrites for high ethanol sensor response

Mixed morphology of SnO₂ nanowires and nanodendrites was synthesized on the gold-coated alumina substrates by carbothermal reduction of SnO₂ in closed crucible. The products were characterized by scanning electron microscopy, x-ray diffractometer, and transmission electron microscopy. Results showed the SnO₂ nanowires and the SnO₂ nanodendrites branched out from the main nanowires. Both SnO₂ nanostructures were pure tetragonal rutile structure. The nanowires were grown in [101] and directions with the diameter of 50–150 nm and the length of a few 10 μm. The nanodendrites were about 100–300 nm in diameter. The growth mechanism of the SnO₂ nanostructures was also discussed. Characterization of ethanol gas sensor, based on the mixed morphology of the SnO₂ nanostructures, was carried out. The optimal temperature was about 360 °C and the sensor response was 120 for 1000 ppm of ethanol concentration.     

Low-temperature photoluminescence of ion-implanted SiO2:Sn+ films and glasses

Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is applied to study the regularities of excitation and relaxation of both point defects and nanoparticles formed by tin implantation into SiO₂ films and glasses. It has been found that tin implantation followed by air and nitrogen annealing yields the formation of α-Sn nanoclusters and nonstoichiometric SnO _x nanoparticles, while a stable phase of SnO₂ does not appear. Alternative channels of luminescence excitation are revealed for nanoclusters, including energy transfer from excitons and electron-hole pairs of the host SiO₂ matrix.     

Chemical synthesis of nanocrystalline SnO2 thin films for supercapacitor application

Nanocrystalline SnO₂ thin films were deposited by simple and inexpensive chemical route. The films were characterized for their structural, morphological, wettability and electrochemical properties using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy techniques (SEM), transmission electron microscopy (TEM), contact angle measurement, and cyclic voltammetry techniques. The XRD study revealed the deposited films were nanocrystalline with tetragonal rutile structure of SnO₂. The FT-IR studies confirmed the formation of SnO₂ with the characteristic vibrational mode of Sn-O. The SEM studies showed formation of loosely connected agglomerates with average size of 5-10 nm as observed from TEM studies. The surface wettability showed the hydrophilic nature of SnO₂ thin film (water contact angle 9°). The SnO₂ showed a maximum specific capacitance of 66 F g⁻¹ in 0.5 Na₂SO₄ electrolyte at 10 mV s⁻¹ scan rate.     

Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp

The film-under-gate field emission arrays (FEAs) have been fabricated on the glass substrates by conventional photolithography, anodic oxidation and lift-off method. SnO₂ emitters were deposited on the cathode electrodes of under-gate triode by screen printing. The image of film-under-gate field emission arrays with SnO₂ emitters was measured by the optical microscopy and field emission scanning electron microscopy (FESEM). The electric field distributions and electron trajectories of film-under-gate triode were simulated in the same anode voltage and different gate voltage by ANSYS. I-V characteristics of film-under-gate triode with SnO₂ emitters were investigated. It indicated that the SnO₂ emitters by screen printing uniformly distributed on the surface of cathode electrodes. The maximum anode current in this triode structure could come to 385 μA and the highest lightness was approximately 270 cd/m² as the gate and anode voltage was 140 V and 2000 V, respectively, at the anode-cathode spacing of 1100 μm. Moreover, the emission current fluctuation was less than 5% for 8 h. It showed that the fabricated device has a good stability of field emission performance and long lifetime, which may lead to practical applications for field emission electron source based on flat lamp for back light units (BLUs) in liquid crystal display (LCD).     

Study of the synthesis and Cl2 gas-sensing properties of nanometer HNO3-doped SnO2

We focused on the effects of the inorganic acid HNO₃ on the gas-sensing properties of nanometer SnO₂ and prepared the powders via a dissolution-pyrolysis method. Furthermore, the powders were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectra (EDS). Several aspects were surveyed, including the calcining temperature, concentration of nitric acid and the working temperature. The results showed that the gas response of 3 wt% HNO₃-doped SnO₂ powders (calcined at 500 °C) to 10 ppm Cl₂ reached 316.5, at the working temperature 175 °C. Compared with pure SnO₂, appropriate HNO₃ could increase the gas sensitivity to Cl₂ gas more significantly.