首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2篇
  免费   0篇
物理学   2篇
  2011年   1篇
  2004年   1篇
排序方式: 共有2条查询结果,搜索用时 31 毫秒
1
1.
High-resolution neutron scattering experiments on optimally doped La2-xSrxCuO4 (x=0.16) reveal that the magnetic excitations are dispersive. The dispersion is the same as in YBa2Cu3O6.85, and is quantitatively related to that observed with charge sensitive probes. The associated velocity in La2-xSrxCuO4 is only weakly dependent on doping with a value close to the spin-wave velocity of the insulating (x=0) parent compound. In contrast with the insulator, the excitations broaden rapidly with increasing energy, forming a continuum at higher energy and bear a remarkable resemblance to multiparticle excitations observed in 1D S=1/2 antiferromagnets. The magnetic correlations are 2D, and so rule out the simplest scenarios where the copper oxide planes are subdivided into weakly interacting 1D magnets.  相似文献   
2.
SnO2 nanowires mixed nanodendrites for high ethanol sensor response   总被引:1,自引:0,他引:1  
Mixed morphology of SnO2 nanowires and nanodendrites was synthesized on the gold-coated alumina substrates by carbothermal reduction of SnO2 in closed crucible. The products were characterized by scanning electron microscopy, x-ray diffractometer, and transmission electron microscopy. Results showed the SnO2 nanowires and the SnO2 nanodendrites branched out from the main nanowires. Both SnO2 nanostructures were pure tetragonal rutile structure. The nanowires were grown in [101] and directions with the diameter of 50–150 nm and the length of a few 10 μm. The nanodendrites were about 100–300 nm in diameter. The growth mechanism of the SnO2 nanostructures was also discussed. Characterization of ethanol gas sensor, based on the mixed morphology of the SnO2 nanostructures, was carried out. The optimal temperature was about 360 °C and the sensor response was 120 for 1000 ppm of ethanol concentration.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号