共查询到19条相似文献,搜索用时 125 毫秒
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N-DBR和双氧化限制层对VCSEL电、光、热特性的影响 总被引:1,自引:1,他引:0
根据增益波导垂直腔面发射激光器直接耦合的准三维理论模型,通过有限差分法对注入电流密度、载流子浓度、光场和热场分布方程求自洽解.研究了垂直腔面发射激光器的电、热和光波导特性,同时提出了一种具有双氧化限制层的增益波导垂直腔面发射激光器结构,并通过对比研究了N-型分布布喇格反射镜和双氧化限制层对增益波导垂直腔面发射激光器特性的影响.计算结果表明,如果忽略N-型分布布喇格反射镜的影响将与实际的垂直腔面发射激光器有较大偏差;双氧化限制层结构对激光器特性有较大的改善,它为增益波导垂直腔面发射激光器提供了一种降低阈值,抑制高阶横模的方法. 相似文献
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结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构.
关键词:
量子点
垂直腔面发射激光器
微分增益
3 dB带宽 相似文献
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基于微纳机械技术设计得到了可调谐垂直腔面发射激光器结构,将具有Al0.8Ga0.2As牺牲层结构的DBR反射镜制备成微纳光机电系统,并与多量子阱有源区光纵向耦合结构相结合.其中,微纳光机电DBR结构不再是简单的分布布拉格反射镜,而是对光波具有高调制作用的可动微纳机械反射镜系统,并在静电力作用下可以动态调谐VCSEL谐振腔的激射波长.实验结果显示,当激光器调谐电压从0 V增加到7 V时,对应激射波长将从968.8 nm蓝移到950 nm,整个调谐范围达到了18.8
关键词:
垂直腔面发射激光器
微纳光机械
波长可调谐 相似文献
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径向桥电极高功率垂直腔面发射激光器 总被引:1,自引:0,他引:1
为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。 相似文献
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Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure 下载免费PDF全文
The 850-nm oxide-confined vertical-cavity surface-emitting lasers with petal-shape holey structures are presented.An area-weighted average refractive index model is given to analyse their effective index profiles,and the graded index distribution in the holey region is demonstrated.The index step between the optical aperture and the holey region is obtained which is related merely to the etching depth.Four types of holey vertical-cavity surface-emitting lasers with different parameters are fabricated as well as the conventional oxide-confined vertical-cavity surface-emitting laser.Compared with the conventional oxide-confined vertical-cavity surface-emitting laser without etched holes,the holey vertical-cavity surface-emitting laser possesses an improved beam quality due to its graded index distribution,but has a lower output power,higher threshold current and lower slope efficiency.With the hole number increased,the holey vertical-cavity surface-emitting laser can realize the single-mode operation throughout the entire current range,and reduces the beam divergence further.The loss mechanism is used to explain the single-mode characteristic,and the reduced beam divergence is attributed to the shallow etching.High coupling efficiency of 86% to a multi-mode fibre is achieved for the single-mode device in the experiment. 相似文献
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依据增益导波垂直谐振腔顶面发射半导体激光器热区特点与室温连续波运行条件建立了一个优化的全解析热模型,对AlInGaAs/AlGaAs垂直谐振腔激光器的横向温度效应进行了详细的解析计算分析,其完全的解析表达展示了更加清晰的横向热场物理图像,对于器件内部热场变化规律的理论预期与实验结果完全符合. 该解析模型及其结果对于研究热稳态下的垂直谐振腔激光器热动力学特性,优化器件结构和控制激光器的阈值电流与功率温度饱和效应,特别是二维面阵器件中的横向热叠加效应提供了一个有用的工具.
关键词:
半导体面发射激光器
热效应
解析计算模型. 相似文献
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研究了光子晶体波导对垂直腔面发射激光器(VCSEL)光束远场形貌的调控.采用三层对称平板波导模型分析了影响光子晶体VCSEL(PC-VCSEL)远场发散角的参数.研究表明,PC-VCSEL中光子晶体的填充比(空气孔直径和光子晶体周期的比值)以及空气孔的刻蚀深度控制了光束的发散角,低填充比和浅刻蚀的PC-VCSEL有利于获得低发散角的光束.设计并制作了两种不同结构参数的PC-VCSEL,这两种器件中光子晶体的填充比和空气孔的刻蚀深度不同.实验结果表明,低填充比和浅刻蚀的PC-VCSEL的发散角更低,与理论分析符合得很好. 相似文献
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《Superlattices and Microstructures》1998,23(2):427-439
The critical design issues for unipolar silicon quantum-well intersubband lasers are investigated in this paper. Group IV lasing at near-infrared and middle-infrared wavelengths is analyzed for surface-emitting and edge-emitting geometries. Calculations show feasibility of SiGe/Si and SiGe/Si lasing. Silicon-on-insulator structures are proposed for index-guided lasers, vertical-cavity lasers and micro-cavity lasers 相似文献
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Y.-K. Kuo J.-R. Chen M.-L. Chen B.-T. Liou 《Applied physics. B, Lasers and optics》2007,86(4):623-631
The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting
lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities,
transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing
a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP
vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is
mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.
PACS 42.55.Px; 78.20.-e; 78.20.Bh; 78.30.Fs 相似文献
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Low-frequency fluctuations, which are typical irregular oscillations in edge-emitting semiconductor lasers, are experimentally observed for the y-polarization mode (y is the direction along the optical axis of a laser material) in a vertical-cavity surface-emitting laser with optical feedback. 相似文献
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The polarization properties of vertical-cavity surface-emitting lasers (VCSELs) subject to optical feedback are studied experimentally. It is thereby demonstrated that polarization-selective optical feedback can be utilized to entirely eliminate VCSEL polarization switching over the entire device operating range. 相似文献
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Blokhin S. A. Bobrov M. A. Maleev N. A. Kuz’menkov A. G. Ustinov V. M. 《Optics and Spectroscopy》2020,128(8):1174-1181
Optics and Spectroscopy - Results of investigation of static characteristics of the vertical-cavity surface-emitting lasers (VCSEL) of the 850-nm spectral range based on strained InGaAs/AlGaAs... 相似文献
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Optical crossbar switches were fabricated using multiwavelength vertical-cavity surface-emitting lasers and free-space microoptics. Four-channel optical switches with 10-nm wavelength intervals were successfully demonstrated. 相似文献