AlInGaAs垂直谐振腔顶面发射半导体激光器横向温度效应的解析热模型及其表征

依据增益导波垂直谐振腔顶面发射半导体激光器热区特点与室温连续波运行条件建立了一个优化的全解析热模型，对AlInGaAs/AlGaAs垂直谐振腔激光器的横向温度效应进行了详细的解析计算分析，其完全的解析表达展示了更加清晰的横向热场物理图像，对于器件内部热场变化规律的理论预期与实验结果完全符合. 该解析模型及其结果对于研究热稳态下的垂直谐振腔激光器热动力学特性，优化器件结构和控制激光器的阈值电流与功率温度饱和效应，特别是二维面阵器件中的横向热叠加效应提供了一个有用的工具. 关键词： 半导体面发射激光器 热效应 解析计算模型.

Analytical thermal model and characterization of lateral thermal effects in AlInGaAs vertical-cavity top-emitting lasers

An optimized comprehensively analytical thermal model was developed in accordance with interior heating characteristics of a gain-guided, top-emitting vertical-cavity surface-emitting laser with c.w. operation under room temperatures. Lateral thermal effects in AlInGaAs/AlGaAs vertical-cavity surface-emitting lasers were calculated analytically in detail. The comprehensively analytical solutions exhibited a clearer physical picture of the lateral heat-flux diffusion. The theoretical predicts of the interior thermal variation within the device were consistent with the experimental results as well. The work provides a useful tool for investigation of thermodynamic properties of the vertical-cavity surface-emitting lasers under thermal steady state, optimization of the device structure and control of the threshold current and power saturation effect, especially for the lateral thermal crosstalk in 2-dimensional arrays.