相互作用量子点系统中的场致自旋电流

从理论上研究了相互作用量子点在外部旋转磁场下的非平衡自旋输运性质，研究结果表明，量子点中的相干自旋振荡可以导致自旋电流的产生，当计入库仑关联相互作用后，近藤共振效应受外部进动磁场的影响很强，特别是当磁场的进动频率与塞曼能移满足共振条件时，每个自旋近藤峰就会劈裂为两个自旋共振峰的叠加，在低温强耦合区，这种近藤型共隧穿过程对自旋电流带来重要贡献。     

自旋对磁量子反点能谱和磁电导的影响

利用分区求解单粒子薛定谔方程的方法,研究了电子自旋对磁量子反点中电子能级和磁电导的影响.结果表明,电子自旋与非均匀磁场的相互作用使电子能级发生劈裂,其特征与均匀磁场中电子自旋引起的劈裂显著不同,磁量子反点中能级的劈裂与角动量量子数密切相关.电子共振隧穿到磁边缘态,导致了磁电导随磁场的非周期性振荡.考虑电子自旋与不考虑电子自旋相比,磁电导谱中谷的数目增多且深度减小. 关键词：     

量子阱中电子自旋注入及弛豫的飞秒光谱研究

采用飞秒脉冲的饱和吸收光谱方法研究了GaAs/AlGaAs多量子阱中电子自旋的注入和 弛豫特性，测得电子自旋极化弛豫时间为80±10ps.说明了电子自旋 轨道耦合相互作用引 起局域磁场的随机化，是导致电子的自旋极化弛豫的主要机理. 关键词： 自旋电子学 半导体量子阱 飞秒激光光谱 自旋 轨道耦合     

金刚石氮-空位色心单电子自旋的电场驱动相干控制

金刚石氮-空位(nitrogen-vacancy,NV)色心量子体系因在室温条件下具有可实现单自旋寻址与操控、长量子相干时间等独特优势,在固态量子计算、量子精密测量等领域展现了巨大的应用潜力,其中单自旋的精确操控技术对于NV色心应用的发展尤为关键.NV色心量子体系中常用的自旋操控方法都是通过共振的交变磁场来驱动和操控NV色心电子自旋.本文开展了利用交变电场对NV色心电子自旋进行调控的技术研究.通过电极所产生的交变电场成功驱动了NV色心自旋在|ms=-1>与|ms=+1>两个△ms=±2的磁禁戒能级间的跃迁,并观测到受控自旋在相关能级的布居度周期性变化而展现出的Rabi振荡现象.进一步的研究表明,电场驱动Rabi振荡的频率受驱动电场功率的调控,与驱动电场的共振频率无直接关系.将自旋电控制技术与磁控制技术方法相结合,能够实现对NV色心3个自旋能级间直接跃迁的全操控.自旋电控制技术的发展将进一步推动NV色心量子体系在量子模拟、量子计算、电磁场的精密测量等领域研究和应用的发展.     

金刚石中氮空位中心在外加磁场下的电子自旋共振

金刚石中单个氮空位中心的电子自旋在激光辐射下能够发出近红外的光致荧光,增加微波辐射可以对其进行量子调控,是室温条件下实现量子计算机的主要介质之一.本文利用激光共聚焦扫描显微系统观测到了金刚石晶体中氮空位中心的荧光二维扫描图,并通过二次相关函数测量验证了氮空位中心是单光子源.改变微波辐射频率得到了电子自旋共振谱,从而实现了对单个氮空位中心的量子调控.利用设计的可控静磁场研究了氮空位中心在不同磁场方向和大小时的光致荧光特性和自旋共振峰.实验结果表明两个电子自旋共振峰间的频率间距与静磁场的旋转角度成余弦函数关系,与理论分析结果一致.     

可控磁性量子点杂质引起的单电子自旋过滤器

本文提出一种基于电子-电子自旋交换相互作用获得自旋极化电流的模型. 该方案中, 需要两个距离相近的量子点. 其中一个是开放系统, 另一个是封闭系统. 开放系统能完成单电子输运, 封闭系统产生比较强的局域磁场, 两个系统之间有电子-电子自旋交换相互作用. 该相互作用会影响电子输运, 从而可以对电子输运产生自旋过滤效应. 我们用量子主方程描述开放系统的演化, 在有效哈密顿量的基础上, 可以得到解析结果. 结果显示, 在低温条件下, 交换相互作用足够强的时候, 系统给出的自旋过滤效率接近1 .     

量子点双链中电子自旋极化输运性质

利用非平衡格林函数方法, 研究了与单个量子点耦合的量子点双链中电子自旋极化输运性质. 由于系统中Rashba自旋轨道耦合产生的自旋相关的相位, 电子通过上下两种路径时, 自旋不同的电子干涉情况不同, 从而导致了电极中的自旋极化流. 左右两电极间的偏压使单个量子点中的自旋积聚在很大能量区域内能够保持较大的值. 由于系统结构的左右不对称, 正负偏压下自旋积聚情况完全不同. 这些计算结果将有助于实验上设计新型的自旋电子学器件.     

海森堡XYZ自旋链系统的热纠缠与局域量子不确定性研究

研究了热平衡温度，自旋交换相互作用，Dzyaloshinskii-Moriya(DM)相互作用及外加非一致性磁场对两比特海森堡XYZ自旋链量子系统的热纠缠与局域量子不确定度的影响，对比分析了并发度量子纠缠与局域量子不确定度描述自旋链系统量子关联的差别.结果表明自旋链系统的量子纠缠在热平衡温度，DM相互作用及外加磁场的非一致性参数的变化情况下均会出现纠缠突然死亡的再生现象，而自旋链系统的局域量子不确定度随着这些参数呈连续变化现象.并且，自旋交换相互作用，DM相互作用及外加横向磁场作用强度较小时，他们的变化对自旋链系统的量子纠缠与局域量子不确定度的影响有着明显的差别.     

T型量子点结构中的自旋极化输运过程

我们利用单杂质Anderson模型及运动方程等理论,通过求解格林函数的方法研究了通过T型量子点结构(耦合于铁磁电极和介观环量子点结构)的自旋极化输运过程.研究结果表明,与量子点相耦合的铁磁电极中的极化强度是控制量子点电子输运的重要参数,由此可以达到自旋阀效应.另外我们还发现与量子点相耦合的介观环中的磁通会影响电子自旋向上和自旋向下近藤共振峰的分裂程度,但若加入适当的外磁场,那么这样的分裂将被抵消。     

非晶硅纳米圆柱团超表面的双峰近完美吸收效应

利用非晶硅纳米圆柱团超表面,模拟实现了可见光波段的双峰近完美吸收效应.采用离散偶极子近似法,研究了电偶极、磁偶极和电四极对纳米圆柱团超表面散射截面的贡献.模拟分析了非晶硅纳米圆柱团超表面的透射、反射和吸收光谱和电场分布,调整电偶极、磁偶极和电四极米氏共振光谱使其重合并产生相干耦合作用,进而产生电场局域增强效应,实现可见光波段双峰近完美吸收效应,且其对入射角不敏感.非晶硅纳米圆柱团超表面双峰近完美吸收效应具有低损耗、角度不敏感等特性,有望被应用于光学隔离、能量采集等纳米光子学领域.     

Gate control of quantum dot-based electron spin–orbit qubits

We investigate theoretically the coherent spin dynamics of gate control of quantum dot-based electron spin–orbit qubits subjected to a tilted magnetic field under electric-dipole spin resonance (EDSR). Our results reveal that Rabi oscillation of qubit states can be manipulated electrically based on rapid gate control of SOC strength. The Rabi frequency is strongly dependent on the gate-induced electric field, the strength and orientation of the applied magnetic field. There are two major EDSR mechanisms. One arises from electric field-induced spin–orbit hybridization, and the other arises from magnetic field-induced energy-level crossing. The SOC introduced by the gate-induced electric field allows AC electric fields to drive coherent Rabi oscillations between spin-up and -down states. After the crossing of the energy-levels with the magnetic field, the spin-transfer crossing results in Rabi oscillation irrespective of whether or not the external electric field is present. The spin–orbit qubit is transferred into the orbit qubit. Rabi oscillation is anisotropic and periodic with respect to the tilted and in-plane orientation of the magnetic field originating from the interplay of the SOC, orbital, and Zeeman effects. The strong electrically-controlled SOC strength suggests the possibility for scalable applications of gate-controllable spin–orbit qubits.     

Optical nuclear spin polarization in quantum dots

Hyperfine interaction between electron spin and randomly oriented nuclear spins is a key issue of electron coherence for quantum information/computation. We propose an efficient way to establish high polarization of nuclear spins and reduce the intrinsic nuclear spin fluctuations. Here, we polarize the nuclear spins in semiconductor quantum dot(QD) by the coherent population trapping(CPT) and the electric dipole spin resonance(EDSR) induced by optical fields and ac electric fields. By tuning the optical fields, we can obtain a powerful cooling background based on CPT for nuclear spin polarization. The EDSR can enhance the spin flip–flop rate which may increase the cooling efficiency. With the help of CPT and EDSR, an enhancement of 1300 times of the electron coherence time can be obtained after a 10-ns preparation time.     

Field tuning the g factor in InAs nanowire double quantum dots

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control.     

Decoherence in solid-state qubits

The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.     

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields.A strong spin-polarized current can be obtained by changing the dc magnetic field.It is mainly due to the resonant tunnelling.But for the ferromagnetic right electrode,the electron spin resonance also plays an important role in transport.We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.     

Coherent single electron spin control in a slanting Zeeman field

We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudospin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Single-qubit rotations and the controlled-NOT operation can be realized. We estimated the relaxation (T1) and coherence (T2) times and the (tunable) quality factor. This scheme implies important experimental advantages for single electron spin control.     

Rashba effect in an asymmetric quantum dot in a magnetic field

We derive an expression for the total spin-splitting energy in an asymmetric quantum dot with ferromagnetic contacts, subjected to a transverse electric field. Such a structure has been shown by one of us to act as a spintronic quantum gate with in-built qubit readers and writers (Phys. Rev. B61, 13813 (2000)). The ferromagnetic contacts result in a magnetic field that causes a Zeeman splitting of the electronic states in the quantum dot. We show that this Zeeman splitting can be finely tuned with a transverse electric field as a result of nonvanishing Rashba spin–orbit coupling in an asymmetric quantum dot. This feature is critical for implementing a quantum gate.     

Computing with spins: from classical to quantum computing

This article reviews the use of single electron spins to compute. In classical computing schemes, a binary bit is represented by the bistable spin polarization of a single electron confined in a quantum dot and subjected to a weak magnetic field. The spin orientation can be either parallel or anti-parallel to the field, so that it becomes a binary variable which can encode logic 0 and logic 1. Coherent superposition of these two polarizations can represent a qubit for quantum computing. By engineering the exchange interaction between closely spaced spins in neighboring quantum dots, it is possible to implement either classical or quantum logic gates.     

基于应变锗空穴双量子点的可调耦合和自旋阻塞研究

应变锗空穴量子点是实现超大规模量子计算最有前景的平台之一.由于锗空穴不受超精细相互作影响，有着较长的自旋弛豫时间和量子退相干时间，且锗中本征的强旋轨道耦合和空穴载流子的低有效质量，使得全电场操控空穴自旋量子比特得以实现，极大地降低了器件加工难度，增加了量子点的可扩展性.本文介绍了一种使用应变锗异质结制备重叠栅空穴双量子点器件的方法，完成了应变锗异质结性质测量，空穴双量子点器件制作，单量子点输运性质和双量子点输运性质研究，双量子点耦合可研究调节性研究，以及外磁场存在下的漏电流性质研究和泡利自旋阻塞解除机制的研究.这些工作为未来实现高质量自旋量子比特制备和高保真度量子逻辑门操控提供了实验平台和基本参数.