准一维半导体量子点中电偶极自旋共振的物理机理

半导体量子点中的电子自旋具有较长相干时间以及可扩展性的特点, 在近十几年来引起了人们的广泛兴趣. 人们常常利用电子自旋共振技术来对单个自旋进行操纵. 这样不但需要一个静磁场来使电子产生赛曼劈裂, 同时还需要一个与之垂直的局域振荡磁场. 但是, 在实验上产生足够强且具有固定频率的局域磁场是比较困难的. 后来人们发现, 局域的振荡电场也可以操纵单个电子自旋, 也就是所谓的电偶极自旋共振. 众所周知, 自旋只有自旋磁矩, 不会与电场有任何直接的相互作用. 所以, 电偶极自旋共振的发生必须依赖于某些媒质. 这些媒质包括：量子点材料中的自旋轨道耦合作用, 量子点中的局域磁场梯度, 以及量子点中电子自旋与核自旋的超精细相互作用. 这些媒质能诱导出自旋与电场之间间接的相互作用, 从而外电场操纵单个电子自旋得以实现. 本文总结归纳了目前半导体量子点系统中发生电偶极自旋共振的三种主要物理机理.     

抛物量子点中强耦合磁双极化子内部激发态性质

基于Lee-Low-Pines幺正变换,采用Pekar类型变分法研究了抛物量子点中强耦合磁双极化子的内部激发态性质,当考虑自旋和外磁场影响时,推导出二维量子点中强耦合磁双极化子基态的能量E0,声子平均数ˉN0以及第一激发态的能量E1,声子平均数ˉN1随量子点受限强度ω0,介电常数比η,电子-声子耦合强度α和磁场的回旋共振频率ωC的变化规律.结果表明,磁双极化子的基态能量E0和第一激发态能量E1由两电子的单粒子能量E E,两电子间库仑相互作用能E C,电子自旋与磁场相互作用能E s和电子-声子相互作用能E e-ph四部分组成;单粒子"轨道"运动与磁场相互作用导致了第一激发态能级E1分裂为E(1+1)1,E(1-1)1两条,而电子自旋-磁场相互作用的效应又使基态和第一激发态的各能级均产生了三条"精细结构";ˉN0和ˉN1随ω0,α和ωc的增加而增大,E e-ph的取值总是小于零,其绝对值随α,ω0和ωc的增加而增大;电子-声子相互作用的效应是束缚态磁双极化子形成的有力因素,而限定势和电子之间的库仑排斥能的存在不利于束缚态磁双极化子的形成;能量为E(1-1)1的磁双极化子要比能量为E(1+1)1的磁双极化子更容易且更稳定地处于束缚态.     

极向Kerr效应对电子自旋交换劈裂的依赖性

用量子理论处理了单原子四能级跃迁模型,研究了自旋交换劈裂对磁光Kerr旋转的影响.结果表明,磁光Kerr转角与电子自旋交换劈裂能之间关系一般是非线性的,仅当交换劈裂能很小时才有线性关系存在 关键词： Kerr转角 磁性 交换作用 劈裂     

低维介观系统中磁边缘态输运特性

低维介观系统中,当存在垂直方向磁场时,磁边缘态的形成、存在和其固有的特性对系统的量子相干输运过程起着至关重要的作用。本文通过求解相关的单电子的薛定谔方程,来演示准一维量子线中磁边缘态的形成,讨论磁边缘态波函数的一般性质和规范变换及坐标旋转变换下边缘态的变换形式。简单介绍耦合平行双量子线的磁致输运特性,此时色散关系中出现能级交叉、劈裂、和振荡结构,并导致方波型振荡的磁电导谱。最后,简单介绍一维和有限宽度的介观环中持续电流和色散关系。     

低维介观系统中磁边缘态输运特性

低维介观系统中，当存在垂直方向磁场时，磁边缘态的形成、存在和其固有的特性对系统的量子相干输运过程起着至关重要的作用。本文通过求解相关的单电子的薛定谔方程，来演示准一维量子线中磁边缘态的形成，讨论磁边缘态波函数的一般性质和规范变换及坐标旋转变换下边缘态的变换形式。简单介绍耦合平行双量子线的磁致输运特性，此时色散关系中出现能级交叉、劈裂、和振荡结构，并导致方波型振荡的磁电导谱。最后，简单介绍一维和有限宽度的介观环中持续电流和色散关系。     

电子自旋交换作用对极向磁光Kerr效应的影响——能带跃迁模型

用微观量子理论和能带跃迁模型,研究了极向磁光Kerr效应对电子自旋交换劈裂能依赖性.结果表明,磁光Kerr转角θ_K与自旋劈裂能Δ之间仅当Δ很小时才有线性关系;θK的展开式中只出现Δ奇次项而不出现偶次项.     

In0.53Ga0.47AS/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In0.53 Ga0.47 As/In0.52AI0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.     

纵向极化与磁化叠层复合材料磁电效应理论及计算

基于纵向极化压电材料及纵向磁化磁致伸缩材料的压电和压磁方程与磁电元件运动方程,给出磁电元件开路电压表达式;鉴于压电材料高输出阻抗的特点,考虑测试仪器的有限输入阻抗和传输信号引线电缆电容,通过建立等效电路模型推出了非开路情况下磁电电压计算式,取不同材料参数对磁电电压进行了数值计算.研究表明,材料参数、电路参数对输出电压均产生影响.对磁伸材料两端面受非均匀偏置磁场产生外力的非自由边界磁电效应进行研究发现,恒外力作用使压电元件产生不可检测的稳恒电压. 关键词： 纵向极化 磁电效应 磁电元件 层叠材料     

T型量子点结构中的自旋极化输运过程

我们利用单杂质Anderson模型及运动方程等理论,通过求解格林函数的方法研究了通过T型量子点结构(耦合于铁磁电极和介观环量子点结构)的自旋极化输运过程.研究结果表明,与量子点相耦合的铁磁电极中的极化强度是控制量子点电子输运的重要参数,由此可以达到自旋阀效应.另外我们还发现与量子点相耦合的介观环中的磁通会影响电子自旋向上和自旋向下近藤共振峰的分裂程度,但若加入适当的外磁场,那么这样的分裂将被抵消。     

In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的 关键词： 二维电子气 正磁电阻 子带散射     

Theory of Faraday rotation beats in quantum wells with large spin splitting

Spin dynamics of conduction electrons in a quantum well with a zinc blende structure is considered theoretically for the case where spin splitting exceeds the collisional broadening of energy levels. It is shown that, under certain conditions, the spin density component normal to the quantum well plane may oscillate with time even in the absence of an external magnetic field. These oscillations can be excited and detected using nonlinear two-pulse spectroscopy. Contrary to the case of small spin splitting, the external transverse magnetic field strongly affects spin dynamics in this regime.     

Interacting electrons in a two-dimensional disordered environment: effect of a zeeman magnetic field

The effect of a Zeeman magnetic field coupled to the spin of the electrons on the conducting properties of the disordered Hubbard model is studied. Using the determinant quantum Monte Carlo method, the temperature- and magnetic-field-dependent conductivity is calculated, as well as the degree of spin polarization. We find that the Zeeman magnetic field suppresses the metallic behavior present for certain values of interaction and disorder strength and is able to induce a metal-insulator transition at a critical field strength. It is argued that the qualitative features of magnetoconductance in this microscopic model containing both repulsive interactions and disorder are in agreement with experimental findings in two-dimensional electron and hole gases in semiconductor structures.     

Spin edge states in two-dimensional electron systems in the presence of Zeeman effect

We study the spin edge states, induced by the combined effect of Bychkov-Rashba spinorbit and Zeeman interactions or of Dresselhaus spin-orbit and Zeeman interactions in a twodimensional electron system, exposed to a perpendicular quantizing magnetic field and restricted by a hard-wall confining potential. We derive an exact analytical formula for the dispersion relations of spin edge states and analyze their energy spectrum versus the momentum and the magnetic field. We calculate the average spin components and the average transverse position of electron. It is shown that by removing the spin degeneracy, spin-orbit interaction splits the spin edge states not only in the energy but also induces their spatial separation. Depending on the type of spin-orbit coupling and the principal quantum number, the Zeeman term in the combination with spin-orbit interaction increases or decreases essentially the splitting of bulk Landau levels while it has a weak influence on the spin edge states.     

New polaron effect in magnetooptic phenomena in a quantum well

It is predicted that resonance coupling between two discrete electron energy levels corresponding to different size-quantization quantum numbers and different Landau quantum numbers can occur in a quantum well in a quantizing magnetic field. The resonance coupling is due to the interaction of an electron with LO phonons and results in the formation of polaron states of a new type. It is shown that for a certain value of the magnetic field, which depends on the splitting of the electron size-quantization levels, the absorption peak and the two-phonon resonance Raman scattering peak split into two components, the separation between which is determined by the electron-phonon coupling constant. The resonance coupling between size-quantization levels with the same Landau quantum numbers is also studied. The splitting of the peaks in this case is virtually independent of the magnetic field and can be observed in much weaker fields. The experimental observation of the effect will make it possible to determine the relative position of the electronic levels and the electron-phonon coupling constant. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 7, 511–515 (10 April 1997)     

Rashba effect of the bound magnetopolaron in an asymmetry quantum well

Using Pekar variational method, we studied the Rashba effect of the bound magnetopolaron in an asymmetry quantum well. The expression of the ground state energy of the bound magnetopolaron is obtained by theoretical derivation. Due to the influence of the Rashba effect, the ground state energy of the bound magnetopolaron splits into two branches. This phenomenon fully demonstrates that the influence of orbit and spin interaction in different directions on the energy of the polaron is not negligible. Because the contribution of the magnetic field cyclotron resonance frequency to the Rashba spin–orbit splitting is a positive value, the energy spacing becomes larger as the magnetic field cyclotron resonance frequency increases. Due to the presence of impurities, the polaron is more stable than the bare electron state, and the energy splitting is more stable.     

HgMnTe磁性二维电子气自旋-轨道和交换相互作用研究

通过分析不同温度下HgMnTe磁性二维电子气Shubnikov-de Hass（SdH）振荡的拍频现象，研究了量子阱中电子自旋 轨道相互作用和spd交换相互作用.结果表明：（1）在零磁场下，电子的自旋 轨道相互作用导致电子发生零场自旋分裂；（2）在弱磁场下，电子的自旋-轨道相互作用占主导地位，并受Landau分裂和Zeeman分裂的影响，电子的自旋分裂随磁场增加而减小；（3）在高磁场下，电子的spd交换相互作用达到饱和，电子的自旋分裂主要表现为Zeeman分裂.实验证明了当电子的Zeeman分裂能量与零场 关键词： 磁性二维电子气 Zeeman分裂 Rashba自旋分裂     

Electric field control of spin splitting in III–V semiconductor quantum dots without magnetic field

We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.     

Magnetic Field Effects on Quantum-Dot Spin Valves

We study the magnetic field effects on the spin-polarized transport of the quantum dot (QD) spin valve in the sequential tunneling regime. A set of generalized master equation is derived. Based on that, we discuss the collinear and noncollinear magnetic field effects, respectively. In the collinear magnetic field case,we find that the Zeeman splitting can induce a negative differential conductance (NDC), which is quite different from the one found in previous studies. It has a critical polarization in the parallel arrangement and will disappear in the antiparallelconfiguration. In the noncollinear magnetic field case, the current shows two plateaus and their angular dependence is analyzed. Although sometimes the two current plateaus have similar angular dependence, their mechanisms are different. Our formalism is also suitable for calculating the transport in magnetic molecules, in which the spin splitting is induced not by a magnetic field but by the intrinsic magnetization.     

Shape-dependence of magnetotransport through quantum dots

Magnetotransport through quantum dot structures is investigated numerically via a scattering matrix technique. The results for two typical structures show that the magnetoconductance is strongly dependent on the quantum dot geometry. For the symmetric quantum dot structure, it is found that the magnetoconductance profiles exhibit irregular structures and the magnetic field plays a similar role to that of disorder in the electron transport. For the T-shaped quantum dot structure, the oscillations in the conductance are found to be completely suppressed and the quantized conductance plateaus are recovered in a strong magnetic field, which is attributed to the asymmetry of the structure geometry with respect to the right- and left-moving edge states.     

Spin Splitting in Different Semiconductor Quantum Wells

We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work.