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1.
We theoretically investigate properties of the ground state of a closed dot-ring system with a magnetic flux in the Kondo regime by means of a tight-banding Anderson Hamiltonian, using the Slave-Boson mean-field approach. The persistent current shows interesting dependences on the parity and on the size of the system. The signature of Kondo resonance at ζk/L = 0.15 is expected to be observed experimentally in the future. With the intensity of the coupling tD changes from weak to strong, the properties of the system changes largely, which are different from the in-line one because of the attached dot.  相似文献   
2.
使用双杂质的Anderson模型的哈密顿量,从理论上研究了一个嵌入耦合量子点的介观Aharonov-Bohm环系统处在Kondo区时的基态性质, 并用slave-boson平均场方法求解了哈密顿量. 结果表明, 在这个系统中, 宇称效应和复杂的电流 相位关系的出现反映了两个量子点可以相干耦合. 关键词: 持续电流 耦合量子点 宇称效应 Kondo效应  相似文献   
3.
The properties of the ground state of a closed dot-ring system with a magnetic flux in the Kondo regime are studied theoretically by means of a one-impurity Anderson Hamiltonian. The Hamiltonian is solved by means of the slave-boson mean-field theory. It is shown that at T=0, a suppressed Kondo effect exists in this system even when the mean level spacing of electrons in the ring is larger than the bulk Kondo temperature. The physical quantities depend sensitively on both the parity of the system and the size of the ring; the rich physical behaviour can be attributed to the coexistence of both the finite-size effect and the Kondo screening effect. It is also possible to detect the Kondo screening cloud by measuring the persistent current or the zero field impurity susceptibility χ_{imp} directly in future experiments.  相似文献   
4.
采用slave-boson平均场近似方法,通过对嵌入不同耦合强度的串联双量子点铁磁臂系统中的自旋反转输运这一问题的研究,发现无论双量子点系统处于弱耦合还是强耦合状态,Kondo共振峰都会出现不同结构的分裂,这主要是由于自旋反转作用改变了量子点的能级以及量子点间的耦合使得Kondo共振峰发生分裂。这些新奇的分裂现象使得这一双量子点系统的物理特性更有意义,它们将有助于解释自旋电子学中的电子强关联问题。  相似文献   
5.
我们利用单杂质Anderson模型及运动方程等理论,通过求解格林函数的方法研究了通过T型量子点结构(耦合于铁磁电极和介观环量子点结构)的自旋极化输运过程.研究结果表明,与量子点相耦合的铁磁电极中的极化强度是控制量子点电子输运的重要参数,由此可以达到自旋阀效应.另外我们还发现与量子点相耦合的介观环中的磁通会影响电子自旋向上和自旋向下近藤共振峰的分裂程度,但若加入适当的外磁场,那么这样的分裂将被抵消。  相似文献   
6.
邹承役  吴绍全  赵国平 《物理学报》2013,62(1):17201-017201
使用双杂质安德森模型的哈密顿量,从理论上研究了串型耦合双量子点系统处于自旋阻塞区时的磁输运性质,并用主方程近似方法求解了哈密顿量.结果表明,自旋轨道耦合作用导致的双量子点间的自旋反转隧穿能够解除系统的自旋阻塞.同时也研究了超精细相互作用导致的在量子点内自旋反转和双量子点之间的自旋关联对系统的磁输运性质的影响,取得了一些有价值的结果,并对相关的物理问题进行了讨论.  相似文献   
7.
We theoretically investigate the Kondo effect of a three-terminal transport quantum dot (QD) embedded in an Aharonov-Bohm ring in the Kondo regime by means of the one-impurity Anderson Hamiltonian. The Hamiltonian is solved by means of the slave-boson mean-field theory. We find that in this system, the Kondo effect depends sensitively oil the parity and size of the ring; the Kondo screening cloud can be tuned by tuning the coupling strength of the reservoir-dot. Thus this model might be a candidate for future device applications.  相似文献   
8.
We have investigated the persistent current in a mesoscopic ring with a side-coupled quantum dot. The problems are probed by using the one-impurity Anderson Hamiltonian and are treated with the slave boson mean field theory. It is shown that the persistent current in this system has the spin fluctuations, and the charge transfers between the two subsystems are suppressed in the limit of Δ/T_K^0〈〈1. The minimum value of the persistent current for ξ_K/L=5 of the odd parity system provides an opportunity to detect the Kondo screening cloud.  相似文献   
9.
利用格林函数并借助于双杂质Anderson模型的哈密顿量,研究了嵌入平行耦合量子点的非平衡介观环路的磁极化电流性质. 结果表明:在零温环境中,随着双量子点耦合强度的增加,系统的Kondo效应被削弱.在低温环境中,人为控制和调节一定的电路参数,极化电流会发生方向的反转,从而可实现对介观环路的极化. 关键词: 极化电流 耦合量子点 Kondo效应 温度效应  相似文献   
10.
We theoretically study the properties of the ground state of a series-coupled double quantum dot embedded in a mesoscopic ring in the Kondo regime by means of the two-impurity Anderson Hamiltonian. The Hamiltonian is solved by means of the slave-boson mean-field theory. It is shown that two dots can be coupled coherently,which is reflected in the appearance of parity effects and the complex current-phase relation in this system. This system might be a possible candidate for future device applications.  相似文献   
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