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1.
采用赝势法近似密度泛函理论的方法研究了重元素Ba置换钙钛矿型氧化物CaMnO_3的稳定性及电子结构.结果表明,Ba置换引入晶格畸变,且具有各向异性.Ba置换钙钛矿型氧化物CaMnO_3呈现明显的半导体特性,且其稳定性降低.Ba置换Ca位之后,钙钛矿型氧化物CaMnO_3仍然呈间接带隙型能带结构,自旋向上和自旋向下的电子能带带隙宽度分别减小到0.659 eV和0.655 eV,且经过Ba置换之后向导体转变.Ba置换CaMnO_3晶体中的电子主要在-37.5 eV,-18 eV,-16 eV,-5 eV~0 eV,1 eV附近形成能带,能级数量在-18 eV,-16 eV,-0.7 eV三个极值点依次降低.Ba置换钙钛矿型氧化物CaMnO_3价带中和导带中的电子能级弥散性不同,表明它们具有不同的有效质量.Mn p,O p和Mn d电子对钙钛矿型氧化物CaMnO_3费米面态密度具有较大的贡献,它们决定CaMnO_3材料的导电过程.  相似文献   

2.
在平面波和赝势法基础上研究了Ca位Na掺杂的钙钛矿型CaMnO_3晶体材料的晶体结构、电子结构和光吸收性质,分析了Na掺杂CaMnO_3晶体材料的电输运过程。结果表明,Na掺杂Ca位使CaMnO_3的晶胞三轴长度均增大,Na掺杂在CaMnO_3中引入了晶格畸变,且晶格畸变是各向异性的。Na掺杂之后,CaMnO_3晶体材料内的O-Mn-O形成的八面体逐步向两个O顶点方向拉长和扭曲。未掺杂和Na掺杂CaMnO_3带隙宽度分别为0.713eV和0.686eV,均呈现明显的半导体特性。在费米能级附近,s态电子对CaMnO_3的态密度贡献最小,p态电子对费米能级以下的态密度贡献最大,d态电子对费米能级以上的态密度贡献最大。Mnp态电子对费米能下方能级形成贡献较大,而Mnd态电子对费米能上方能级形成贡献最大,Op态电子对费米能下方能级形成贡献较大,而Op态电子对费米能上方能级形成贡献最小。与未掺杂CaMnO_3相比,Na掺杂CaMnO_3晶体材料吸收能量向低能量移动,且存在两个强吸收峰,其在6.15eV附近的吸收最强。  相似文献   

3.
在众多热电材料中,SnTe具有与PbTe相同的晶体结构且不含重金属Pb,近年来引起了人们的广泛关注。目前,本征SnTe的热电性能并不特别优异,存在以下问题:大量本征Sn空位导致载流子浓度过高,从而降低了电输运性能;价带中的轻带与重带能量劈裂较大,且带隙过窄,不利于通过重带参与电运输提高Seebeck系数;晶格热导率较大。利用高温高压方法快速合成了Ge掺杂的SnTe合金,系统研究了不同Ge含量对SnTe的微观结构和热电性能的影响。结果表明:Ge掺杂能够有效地调控SnTe材料的电运输性能;Ge掺杂使样品的微观结构发生变化,样品晶粒细化,且析出纳米第二相,晶界和纳米相对声子的散射作用降低了热导率;样品Ge0.2Sn0.8Te在700 K时的热电优值达到0.35。  相似文献   

4.
用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38.  相似文献   

5.
无铅硫族化合物SnTe因与PbTe具有相似的晶体结构和能带结构,近些年受到广泛关注,然而其较低的Seebeck系数、本征高Sn空位浓度以及高的热导率导致本征热电性能较差.本文通过高温高压结合热压烧结的方式制备了 Mn,In,Cu共掺杂的SnTe基热电材料.Mn带来的能带收敛和In引入的共振能级的共同作用提高了材料整个温度范围内的Seebeck系数,优化了材料的功率因子.此外,Mn合金化带来的点缺陷和Cu引入的间隙缺陷增强了声子散射,有效降低了材料的晶格热导率.多种策略结合下材料的电性能与热性能同时得到优化,其中Sn_(0.89)Mn_(0.15)In_(0.01)Te(Cu_2Te)_(0.05)样品在873 K时获得最大zT ≈ 1.45,300—873 K的平均zT达到0.76.多策略协同调控SnTe基热电材料时仍能较好地保持单策略所发挥的优异特性,这为进一步改进SnTe基热电材料性能提供了可能.  相似文献   

6.
晶粒细化是提高Bi2Te3基热电材料力学性能的重要方法,但晶粒细化过程中伴随的类施主效应严重劣化了材料的热电性能,并且一旦产生类施主效应,就很难通过简单的热处理等工艺消除.本文系统研究n型Bi2Te3基化合物烧结前粉体颗粒尺寸对材料类施主效应和热电性能的影响规律.随着颗粒尺寸减小,氧诱导的类施主效应明显增强,载流子浓度从10 M烧结样品的3.36×1019 cm-3急剧增加到120 M烧结样品的7.33×1019 cm-3,严重偏离最佳载流子浓度2.51×1019 cm-3,热电性能严重劣化.当粉体颗粒尺寸为1—2 mm时,烧结样品的Seebeck系数为–195 μV/K,载流子浓度为3.36×1019 cm-3,与区熔样品沿着ab面方向的Seebeck系数为–203 μV/K和载流子浓度为2.51×1019  相似文献   

7.
本文采用Sn自熔剂法,制备Mg掺杂Sn基单晶笼合物Ba8Ga16-XMgXSn30(0 X 1.5),并对其结构及电传输性能进行研究.结果表明所制备化合物为具有空间群Iˉ43m的VIII型单晶笼合物,随Mg掺杂量的增加,对应化合物的熔点略有升高,晶格常数减小,掺杂样品中填充原子Ba的实际含量低于理想值8.0,其在十二面体空洞中的占有率约为0.93(Mg的名义含量X=1.5时).所有样品均表现为n型传导,Mg的掺入对材料的能带结构有一定影响,Mg掺杂后,样品的载流子浓度降低,Seebeck系数的绝对值、电阻率增加,Mg的名义含量X=1.5时,样品的功率因子在430 K附近取得最大值1.26×10-3W·m-1·K-2.  相似文献   

8.
此文用基于密度泛函理论(DFT)的第一性原理计算方法,分别研究了本征、掺Cd、掺Sr的Mg2Ge的能带结构、电子态密度和光学性质.研究结果表明,本征Mg2Ge是一种间接带隙半导体,带隙值为0.228eV.Sr的掺入使其变成带隙为0.591 eV的直接带隙半导体,Cd掺杂Mg2Ge后表现出半金属性质.掺杂后的主要吸收峰减小,吸收谱范围增加.在可见光能量范围内,掺杂的Mg2Ge有更低的反射率,对可见光的利用率增强.此外,掺杂还提高了高能区的光电导率.  相似文献   

9.
采用高压合成技术,在1.5 GPa,900 K的合成压力和温度条件下成功合成出了系列Fe置换掺杂型方钴矿化合物FexCo4-xSb12 ,其中x= 0,0.2,0.6,0.8. 详细研究了FexCo4-xSb12 样品在300 K ~ 700 K温度范围内的电阻率、Seebeck系数和功率因子(S2σ)随温度和Fe掺杂量的变化关系. 研究结果表明:在测试温度范围内,随着温度的升高,样品的电阻率和Seebeck系数逐渐增大. 随着Fe含量的增加,样品的电阻率和Seebeck系数先增加后减小. 与常压下相同样品比较,高压合成方法制备的样品的电学输运特性有了明显的提高. 上述研究结果表明,高压合成技术在制备热电材料方面能够有效地提高样品的电输运特性.  相似文献   

10.
采用离子束溅射技术交替沉积Sb-Te-Sb多层薄膜后进行高真空热处理,直接制备Sb2Te3薄膜.利用X射线衍射(XRD)仪、霍尔系数测试仪、薄膜Seebeck系数测量系统对所制备的薄膜特性进行表征.XRD测量结果显示,薄膜的主要衍射峰与Sb2Te3标准衍射峰相同,在[101]/[012]晶向取向明显,存在较多的Te杂质峰;霍尔系数测试结果表明,薄膜为p型半导体薄膜,薄膜电阻率较低,其电导率接近于金属电导率,载流子浓度量级为1023cm-3,具有良好的电学性能;Seebeck系数测量结果显示,薄膜具有良好的热电性能,在不同条件下制备的薄膜的Seebeck系数在7.8—62μV/K范围;在所制备的薄膜中,退火时间为6h、退火温度为200℃的薄膜其Seebeck系数达到最大,约为62μV/K,且电阻率最小.  相似文献   

11.
阮璐风  王磊  孙得彦 《物理学报》2017,66(18):187301-187301
采用基于密度泛函理论的第一性原理计算方法,系统地研究了La_(1-x)Sr_xMnO_3层中Sr的掺杂方式和掺杂量对4La_(1-x)Sr_xMnO_3/3LaAlO_3/4SrTiO_3(LSMO/LAO/STO)异质结构原子和电子结构的影响.结果表明:对于相同的Sr掺杂量,掺杂方式的差异对体系电子结构的影响微弱,不会导致体系发生金属-绝缘体转变;掺杂量的不同对体系电子结构有着显著的影响,当Sr的掺杂量较少时,LAO/STO界面处存在着准二维电子气,当Sr的掺杂量高于1/3时,LAO/STO界面处准二维电子气消失.我们相信,Sr的引入以及通过Sr掺杂量的改变可以对LSMO覆盖层极化进行调控,这也是导致体系LAO/STO界面处金属-绝缘体转变的可能原因,进一步为极化灾变机制导致的界面处电子重构提供了证据.  相似文献   

12.
刘莉  王守宇  殷子  刘卫芳  徐训岭  张闯  李秀  杨佳斌 《中国物理 B》2016,25(9):97801-097801
Multiferroic material as a photovoltaic material has gained considerable attention in recent years.Nanoparticles(NPs)La_(0.1)Bi_(0.9-x)Sr_xFeO_y(LBSF,x = 0,0.2,0.4) with dopant Sr~(2+)ions were synthesized by the sol–gel method.A systematic change in the crystal structure from rhombohedral to tetragonal upon increasing Sr doping was observed.There is an obvious change in the particle size from 180 nm to 50 nm with increasing Sr substitution into LBFO.It was found that Sr doping effectively narrows the band gap from~2.08 e V to~1.94 e V,while it leads to an apparent enhancement in the electrical conductivity of LBSF NPs,making a transition from insulator to semiconductor.This suggests an effective way to modulate the conductivity of BiFeO_(3-)based multiferroic materials with pure phase by co-doping with La and Sr at the A sites of BiFeO_3.  相似文献   

13.
Structural studies on the electron doped Ca1−xYxMnO3 are presented. At 300 K, orthorhombic O-phase was observed in all cases, associated to low electric resistivity and high Curie–Weiss temperature. For samples with x>0.07, structural phase transitions to more distorted orthorhombic and monoclinic phases were found at T<170K. In these phases only weak ferromagnetic interactions were observed.  相似文献   

14.
Mengwu Huo 《中国物理 B》2022,31(10):107401-107401
Superconductivity has been realized in films of La1-xSrxNiO2. Here we report synthesis and characterization of polycrystalline samples of La1-xSrxNiO3 and La1-xSrxNiO2 (0 ≤ x ≤ 0.2). Magnetization and resistivity measurements reveal that La1-xSrxNiO3 are paramagnetic metal and La1-xSrxNiO2 exhibit an insulating behavior. Superconductivity is not detected in bulk samples of La1-xSrxNiO2. The absence of superconductivity in bulk La1-xSrxNiO2 may be due to the generation of hydroxide during reduction, a small amount of nickel impurity, or incomplete reduction of apical oxygen. The effect of interface in films of La1-xSrxNiO2 may also play a role for superconductivity.  相似文献   

15.
A criterion used for the determination of first- and second-order magnetic phase transitions from purely magnetic methods is applied to manganese perovskites of formula La2/3(Ca1−xSrx)1/3MnO3. A crossover from first- to second-order character at a tolerance factor t=0.92 is found, which also brings about several variations in other physical properties. At t=0.92 a change from orthorhombic to rhombohedral symmetry also takes place. The impossibility of establishing static cooperative Jahn–Teller distortions in the rhombohedral symmetry is suggested as being responsible for the observed behaviour.  相似文献   

16.
张成国  章晓中 《物理学报》2008,57(11):7126-7131
运用原子模拟技术考察了La1-xCaxMnO3(x≤1/3)中Ca的分布,发现低温下掺杂的Ca离子倾向于团簇化分布,形成纳米尺度的团簇.对加压和温度下团簇的稳定性也进行了研究,发现这种团簇在3 GPa和120 K下是稳定的.这种化学相分离可能是造成La1-xCaxMnO3中结构和电磁性质不均匀的原因之一. 关键词: 原子模拟技术 锰氧化物 团簇 相分离  相似文献   

17.
The exchange interactions in polycrystalline samples of Ca1−xLaxMnO3 (0.00x0.05) are studied by means of Raman scattering and electron paramagnetic resonance. Dramatic reductions in the spin-phonon interactions and magnetic correlations are observed for La doping levels as small as 2–3%. These results show that the charge carriers play an important role in the overall exchange coupling in the electron-doped manganites, even at very low doping levels.  相似文献   

18.
Oxide ion conductivity of the pure and aliovalent ion substituted rare-earth pyrohafnates in the series RE2−xSrxHf2O7 and RE2Hf2−xAlxO7 (RE=Gd and Nd; x=0–0.2) has been explored in the temperature range 400°C–700°C for the first time. It is seen that, conductivity is enhanced by doping 5 atom% Sr at the rare–earth site in these systems. Well defined impedance plots due to grain interior and grain boundary resistances were obtained in the Gd pyrohafnate with Sr substitution. The results of the conductivity variation for the pure, Sr and Al doped phases are explained on the basis of pyrochlore structure.  相似文献   

19.
The Cu site substitution effects on the Hall coefficient RH and the electrical resistivity have been studied for La2−xSrxCuO4. In a small x region, RH decreases largely with Zn doping and increases with Ni doping. In the Ni doped samples, shows the characteristic temperature dependence similar to those of the unsubstituted samples where the decrease of the slope of vs. T curve is observed for x<0.1 above 600K but in the Zn doped samples, the change of the slope of becomes smaller,i.e. the temperature dependence of below 600K becomes smaller. These results indicate that the origin of the change of the slope of around 600K for x<0.1 is magnetic and the spin correlation or the electronic state is rather different below and above 600K. The unusual Zn doping dependences of RH and are naturally explained by considering that the electronic state at high temperatures above 600K which has a small Hall coefficient expected for the large Fermi surface comes down to lower temperatures by the Zn doping.  相似文献   

20.
Experimental evidence shows that in the magnetoresistive manganite Ca1−xYxMnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF) background, as a result of the doping with yttrium. This hypothesis is supported in this work by classical Monte Carlo calculations performed on a model where FM double exchange and AF superexchange compete.  相似文献   

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