(Ni0.81Fe0.19)1－xCrx作为种子层对NiFe/PtMn双层膜交换偏置的影响

将NiFe/PtMn双层膜生长在(Ni_0.81Fe_0.19)_1-xCr_x种子层材料上，通过改变种子层中Cr的原子含量，系统的研究了NiFe/PtMn双层膜中PtMn晶粒尺寸和织构对交换偏置的影响.对退火270℃，5h后的NiFe/PtMn双层膜磁性的研究表明,PtMn织构强弱对交换偏置场的影响不明显，而PtMn的晶粒尺寸是影响交换偏置场的主要因素，PtMn颗粒的相干长度在11.3nm左右时得到了较大的交换偏置场. 关键词： NiFe/PtMn双层膜 交换偏置场     

NiFe/FeMn双层膜交换偏置的形成及热稳定性研究

研究了在铁磁(NiFe)/反铁磁(FeMn)双层膜之间，交换偏置的形成过程和热稳定性，特别是NiFe/FeMn的交换偏置作用与FeMn层晶粒尺寸的关系.和以前作者不同的是，本文方法采用非磁性Ni-Fe-Cr合金作缓冲层材料，改变Cr的含量就可以获得不同晶粒尺寸的反铁磁FeMn层.实验表明，晶粒尺寸较小的FeMn产生较强的铁磁/反铁磁交换偏置场；但是，对于较大晶粒的FeMn层，出现交换偏置作用所要的临界厚度较小.这符合Mauri提出的理论模型.交换偏置场的热稳定性实验表明，具有较大晶粒尺寸的FeMn层给出较 关键词： 交换偏置 热稳定性 反铁磁 晶粒尺寸     

Ta,Ta/Cu缓冲层对NiFe/Fe Mn双层膜交换偏置场的影响

采用磁控溅射方法制备了分别以Ta和Ta/Cu作为缓冲层的一系列NiFe/FeMn双层膜.实验发现,以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Ta/Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大.测量了这两种双层膜的织构、表面粗糙度和表面成分.结果表明,以Ta/Cu为缓冲层时,Cu在NiFe层的上表面偏聚是造成NiFe/FeMn双层膜交换偏置场降低的重要原因. 关键词： NiFe/FeMn 交换偏置场 织构 表面粗糙度     

分子束外延生长Fe/Fe50Mn50双层膜的交换偏置

利用表面磁光克尔效应和铁磁共振对分子束外延生长的Fe/Fe₅₀Mn₅₀双层膜的交换偏置场和矫顽力进行了研究,实验结果表明,当反铁磁层厚度小于55nm时 ,不出现交换偏置,而当大于这一厚度时,出现交换偏置;大约在7nm时,达到极大值.随着 反铁磁层厚度的继续增大,偏置场和矫顽力随Fe₅₀Mn₅₀膜厚的增大 而下降.铁磁共振实验结果表明样品的磁性存在单向各向异性.并对上述结果进行了讨论. 关键词： 分子束外延 50Mn₅₀')" href="#">Fe/Fe₅₀Mn₅₀ 双层膜 交换偏置     

NiFe/FeMn双层膜的交换耦合

采用平面霍尔效应测量方法，对NiFe/FeMn双层膜的交换耦合进行了研究. 结果表明，在NiFe/FeMn体系中不存在spin-flop模型给出的单轴各向异性场. 而导致交换耦合场可逆与不可逆测量结果之间较大差异的原因是反铁磁颗粒的不稳定性或铁磁层的分畴现象. 关键词： 反铁磁/铁磁双层膜 交换偏置场 可逆与不可逆测量     

(Ni0.81Fe0.19)1-xCrx作为种子层对NiFe/FeMn交换偏置的影响

采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进 关键词： 交换偏置 晶粒尺寸 织构 种子层     

BiFeO3/Ni81Fe19磁性双层膜中的交换偏置及其热稳定性研究

研究了磁场诱导生长的BiFeO₃/Ni₁₈Fe₁₉磁性双层膜中 的交换偏置及其热稳定性. 结果表明: BiFeO₃/Ni₁₈Fe₁₉双层膜中的交换偏置场H_ex未表现出明显的磁练习效应. 在负饱和磁场等待过程中, BiFeO₃/Ni₁₈Fe₁₉双层膜磁滞回线的前支和后支曲 线都随着在负饱和磁场中等待时间t_sat的增加向正场方向偏移. 交换偏置场H_ex的大小随着等待时间t_sat的增加而减小, 矫顽力H_c基本不变. 交换偏置场H_ex的大小随测量温度T_m的升高变化不明显, 表现出良好的热稳定性; 但矫顽力H_c随T_m的升高而显著减小. 良好的热稳定性应该来源于铁电性和反铁磁性间的共同耦合作用. 关键词： 多铁性 磁性薄膜 交换偏置 热稳定性     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

Ni81Fe19/Cr82Al18双层膜中的交换偏置

研究了直流磁控溅射法制备的Ni₈₁Fe₁₉/Cr₈₂Al₁₈双层膜中的交换耦合.样品的室温矫顽力与1/t^{3/2_FM(t_FM为铁磁层厚度）近似成正比例关系,从而表明在Ni₈₁Fe₁₉/Cr₈₂Al₁₈中交换耦合为铁磁/反铁磁界面的随机相互作用.另外还讨论了反铁磁层厚度对交换偏置的影响. 关键词：}     

退火对IrMn基磁隧道结多层膜热稳定性的影响

采用磁控溅射方法制备了结构为IrMn/CoFe/AlO_x/CoFe的磁性隧道结多层膜,样品置于真空磁场中进行退火处理. 将在不同温度退火的磁隧道结结构多层膜置于负饱和场中等待,研究退火温度对样品热稳定性的影响. 结果表明:退火提高了多层膜反铁磁层的单轴各向异性能,增加了样品的交换偏置;随着负饱和场等待时间的延长,被钉扎层的磁滞回线向正场偏移,交换偏置单调减小,但退火减弱了这种趋势. 关键词： 磁隧道结 交换偏置 磁化反转     

The structures and magnetic properties of Cr/Fe and Mn/Fe thin films

Cr_1-x Fe _x and Mn_1-x Fe _x films were prepared at room temperature by thermal coevaporation at a deposition rate of about 25 Å/min. It was found that an amorphous phase can be obtained for Cr_1-x Fe _x (0.25<x<0.60) films, while a metastable-Mn-type phase was observed for Mn_1-x Fe _x (x<0.70) films. The influence of the structure on the magnetic properties has been studied. The amorphization ability of the two systems was discussed in terms of thermodynamic considerations.     

脉冲激光沉积法制备的Ni1-xFexO稀磁半导体的结构和磁性研究

利用脉冲激光沉积方法制备出了具有室温铁磁性的Ni_1-xFe_xO(x=0.02,0.05)稀磁半导体.X射线衍射(XRD)结果表明Ni_1-xFe_xO的晶体结构为NaCl结构,并且在Fe含量较高的Ni_0.95Fe_0.05O中出现了少量的α-Fe₂O₃物相.X射线吸收近 关键词： 1-xFe_xO')" href="#">Ni_1-xFe_xO XANES 脉冲激光沉积方法     

NiFeNb种子层对坡莫合金磁滞回线的影响

以NiFeNb为种子层，制备(Ni₇₉Fe₂₁)_1-xNb_{x(5nm)/(Ni79Fe21) (20nm)/Ta(3nm)系列膜，并对其颗粒大小、 磁滞回线及表面粗糙度等进行测量，探讨种子层中Nb含量x对坡莫合金磁滞回线的影响.结果 表明，以NiFeNb作种子层能更好地改善坡莫合金的微结构. Nb含量为23％时的磁滞回线有最 小的最大磁能积、矫顽力.种子层影响坡莫合金磁滞回线的一个重要原因是脱附激活能等因 素造成种子层具有不同的表面粗糙度，进而使坡莫合金具有不同的微结构和磁性能. 关键词： NiFeNb种子层 坡莫合金 磁滞回线 粗糙度}     

A study on electrodeposited Ni x Fe1−x alloy films

Ni _x Fe_1−x (0.22 ≤x ≤ 0.62) alloy films were grown by electrodeposition technique. A shift in diffraction peaks of NiFe and Ni₃Fe was detected with increasing Ni content. The highest positive magnetoresistance ratio was detected as 5% in Ni0.₅₁Fe0.₄₉. Positive and negative anisotropic magnetoresistance were observed in longitudinal and transverse geometries respectively. The highest anisotropic magnetoresistance ratio of 9.8% was also detected in Ni0.₅₁Fe0.₄₉. The angular variation of magnetoresistance was studied. Magnetisation loop curves show that NiFe alloy films have a linear decreasing anisotropy constant with increasing Ni deposit content and show a decreasing behavior of coercivity which indicates soft magnetic property with increasing Ni deposit content     

电弧炉制备的Sm2Fe17-xCrx化合物的结构与磁性

通过X射线衍射、磁测量等手段对电弧炉制备的不同热处理条件的Sm₂Fe_17-xCr_x（x=1—3）化合物的结构和磁性进行了研究.结果表明1050 ℃下退火5 d的Sm₂Fe_17-xCr_x（x=1—3）化合物具有菱方相的Th₂Zn₁₇型结构,同样温度下退 关键词： 2Fe_17-xCr_x化合物')" href="#">Sm₂Fe_17-xCr_x化合物 磁体积效应 居里温度 磁晶各向异性     

铁基Heusler合金Fe2Co1-xCrxSi的结构、磁性和输运性质的研究

基于多种实验手段和能带计算的方法, 对四元合金Fe₂Co_1-xCr_xSi的晶体结构、 磁性、输运性质及能带结构进行了研究. 研究发现, 随着Cr的增加, 合金Fe₂Co_1-xCr_xSi保持了高度有序结构, 逐渐从Hg₂CuTi结构的Fe₂CoSi 过渡到L2₁结构的Fe₂CrSi; 由于次晶格网络的破坏, 居里温度逐渐下降; 系列合金的分子磁矩呈现线性下降, 符合半金属特性; 剩余电阻比率与原子占位有序程度密切相关, 呈现两端大、 中间小的特点. 在Cr替代Co的过程中, 材料半金属能隙逐渐打开, 表现半金属特征. 同时费米能级从Fe₂CoSi半金属能隙的价带顶上移至Fe₂CrSi能隙的导带底. 最大的能隙宽度出现在x= 0.75处, 这表明四元合金有可能成为具有更高自旋极化率和更强抗干扰能力的自旋电子学材料.     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

A study of the properties and microstructure of Ni81Fe19 ultrathin films with MgO

The anisotropic magnetoresistance (AMR) of a Ta (5 nm)/MgO (3 nm)/Ni₈₁Fe₁₉ (10 nm)/MgO (2 nm)/Ta (3 nm) film with MgO-Nano Oxide Layer (NOL) increases dramatically from 1.05% to 3.24% compared with a Ta (5 nm)/Ni₈₁Fe₁₉ (10 nm)/Ta (3 nm) film without the MgO-NOL layer after annealing at 380 °C for 2 h. Although the MgO destroys the NiFe (1 1 1) texture, it enhances the specular electron scattering of the conduction electrons at the NOL interface and suppresses the interface reactions and diffusion at the Ta/NiFe and NiFe/Ta interfaces. The NiFe (1 1 1) texture was formed after the annealing, resulting in a higher AMR ratio. X-ray photoelectron spectroscope results show that Mg and Mg²⁺ were present in the MgO_x films.     

Ionic liquid gating control of magnetic anisotropy in Ni0.81Fe0.19 thin films

Voltage control magnetism is one of the most energy efficient pathway towards magnetoelectric (ME) device. Ionic liquid gating (ILG) method has already shown impressive manipulation power at the IL/electrode interface to influence the structure, orbital as well as spin of the electrode materials. As key material in anisotropy magnetoresistance sensor and spin valve heterostructure, the permalloy Ni_0.81Fe_0.19 was utilized as the electrode to investigate the ILG induced magnetic anisotropy change. In this work, we realized magnetic anisotropy control in Au/[DEME]⁺[TFSI]^-/Ni_0.81Fe_0.19 (2.5 nm)/Ta heterostructure via ILG caused electrostatic doping. This is evidenced in situ reversible ferromagnetic field (H_r) shift with electron spin resonance (ESR) spectrometer. Aiming at the question whether the charge accumulation at the ionic liquid interface is the main control mechanism at low voltage, we carefully tested the relationship between the change of resonance field and the amount of surface charge. It was found that these two had a good linear relationship between −1 V and +1 V. Defining the linear parameter as A whose value is 28.7 mT m²/Col. Unlike previously reported chemical regulation of Co, this article used ionic liquids to physically regulate NiFe, which has not been studied in the previous ionic liquid regulation. And NiFe has a narrower resonance line width for easy reference to microwave devices. In addition, It also has a stronger ferromagnetic signal than Co, which can be more easily detected as a sensor device. Therefore, this system is more promising. The ILG control NiFe may lead to a new kind of magnetoelectric sensor devices and path a new way to low energy consumption spintronics.