调制自由载流子吸收测量半导体载流子输运参数的三维理论

推导出用于测量半导体载流子输运特性(载流子寿命、载流子扩散系数和前表面复合速度)的调制自由载流子吸收(modulated free carrier absorption, MFCA)检测技术的三维理论模型,给出了调制自由载流子吸收检测信号与调制频率和抽运-探测光相对距离的关系.定性分析了在不同调制频率时各个载流子输运参数对径向位置扫描曲线(信号与两束光相对距离的关系)的影响,结果表明调制自由载流子吸收检测信号对各个参数的灵敏度随抽运-探测光相对距离的增加而增加.仿真和实验结果表明,通过拟合不同调制频率时调 关键词： 调制自由载流子吸收 载流子输运特性 径向位置扫描     

调制激光致硅晶圆载流子辐射扫描成像试验研究

建立了调制激光诱发硅晶圆少数载流子密度波一维模型, 仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响. 利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究. 通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图. 该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符; 分析了划痕对载流子输运参数造成的影响, 与光电导方法比较, 该方法可以测量不同位置的全部载流子输运参数且分辨率高.     

硅太阳能电池的调制载流子红外辐射动态响应与参数分析

建立了调制激光诱发硅太阳能电池的少数载流子密度波数学模型,并利用光致载流子辐射检测掺杂浓度、阻抗及载流子输运参数. 对频域响应曲线中的双弯曲效应进行了研究,构建了小交流信号作用的太阳能电池等效电路拓扑结构,仿真分析了不同掺杂浓度、阻抗电阻和载流子传输参数对频响曲线拐点的影响. 通过光致载流子辐射频域扫描实验与多参数拟合检测了单晶硅太阳电池的施/受主浓度、并联电阻和载流子输运参数. 结果表明：光致载流子辐射技术检测大面积太阳能电池频响曲线的双弯曲是由电容效应所引起的,建立的数学模型可定量描述和预测检测结果,并用于测量太阳能电池的掺杂浓度、电阻和载流子输运参数. 关键词： 调制自由载流子辐射 扫频检测 PN结电容 参数测量     

方波调制下自由载流子吸收测量半导体载流子输运参数的时域模型

本文建立了用于测量半导体载流子输运特性(载流子寿命、载流子扩散系数和前表面复合速度)的方波调制下自由载流子吸收(free carrier absorption,FCA)检测技术的时域理论模型.通过数值模拟,分析了在不同调制频率下时域曲线的变化趋势以及各个载流子输运参数对时域曲线的影响.结果表明方波调制下的自由载流子吸收的时域信号对各个参数都用较高的灵敏度,且参数值的测量范围大于频域测量范围.     

双波长自由载流子吸收技术测量半导体载流子体寿命和表面复合速率

提出了采用双波长自由载流子吸收技术同时测量半导体材料载流子体寿命和前表面复合速率的方法.通过数值模拟,定性分析了不同载流子体寿命和前表面复合速率对信号的影响,同时对测量参数的可接受范围和不确定度进行计算并与传统频率扫描自由载流子吸收方法测量结果进行比较.结果表明：提出的双波长自由载流子吸收方法可明显减小载流子体寿命和前表面复合速率的测量不确定度,提高参数测量精度;表面杂质和缺陷越多的样品,其前表面复合速率测量不确定度越小.进一步分析表明,此现象与不同波长激光抽运产生的过剩载流子浓度分布不同有关.     

光子重吸收对硅片的光载流子辐射特性影响的理论研究

光载流子辐射技术已广泛应用于半导体材料性能的表征,本文基于一种包含光子重吸收效应的光载流子辐射理论模型,对单晶硅中光子重吸收效应对光载流子辐射信号的影响进行了详细的理论分析.分析结果表明,光子重吸收效应对光载流子辐射信号的影响主要取决于样品掺杂浓度、过剩载流子浓度和过剩载流子的分布.由于过剩载流子浓度及其分布与材料电子输运特性密切相关,电子输运参数的变化将导致光子重吸收效应的影响随之变化.进一步分析了光子重吸收效应对具有不同电子输运特性的样品的电子输运参数的影响,并提出了减小光子重吸收效应影响的方法.     

TDLAS波长调制压力测量法参数优化

使用TDLAS技术进行动态压力测量已经成为压力测量领域的研究热点。波长调制法实验装置较为复杂,需要对多个参数进行设置,选择出最优的预设参数能够取得更好的实验效果,获得更高的测量精度。目前波长调制法的实验参数设置基本凭借个人经验,使用Matlab程序仿真结合波长调制法的TDLAS测量技术,能够对实验中需要进行预设的重要参数进行了分析。通过计算4990cm-1波段和6330cm-1波段附近的多条吸收峰,发现4990.09cm-1波段处的吸收峰更适合作为波长调制法的测量波段。以4990.09cm-1处的吸收峰为研究对象,进行了波长调制法压力测量仿真建模,计算了调制度、调谐频率和调制频率对二次谐波幅值和对称性的影响并深入地分析了影响因素,总结了其变化规律。在综合考虑抗噪性能和测量精度的情况下,选择了调制度为2.5,调谐频率30Hz,调制频率5kHz为最佳实验参数。基于Matlab的仿真模型能够快速计算大量参数点,更加直观地分析出对参数的影响趋势,为实验仪器和预设参数的选择提供依据。     

GaAs在光通讯波段的超快非线性光学研究

采用Z-扫描和泵浦-探测技术,在光通讯波段对砷化镓(GaAs)单晶进行了非线性动力学以及非线性光学的实验研究.飞秒泵浦-探测实验结果表明,三阶非线性光学效应源于砷化镓单晶对飞秒激光的瞬态双光子吸收,而五阶非线性光学效应源于砷化镓单晶双光子吸收诱导的自由载流子吸收效应.通过Z扫描实验,得到了关于GaAs单晶所有的非线性光学参数,包括双光子吸收系数、三阶非线性折射系数、双光子吸收诱导的自由载流子吸收截面以及双光子吸收诱导的自由载流子折射截面.结果表明,砷化镓单晶在制造光限幅器件和光电探测器方面具有良好的发展前景.     

n-Hg0.80Mg0.20Te界面积累层中二维电子气的输运特性研究

通过变磁场霍耳测量研究了MBE生长的Hg_0.80Mg_0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析,由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg_1-xMgxTe-CdTe的界面积累层或Hg_1-x关键词： 变磁场霍耳测量 界面积累层 二维电子气 1-xMg_xTe')" href="#">Hg_1-xMg_xTe     

蒙特卡洛方法计算材料表面激发参数

电子非弹性散射平均自由程（IMFP）是用表面电子能谱进行表面化学定量分析时极为重要的一个参数,它可以用测量的弹性峰电子能谱分析以及蒙特卡洛模拟来确定.为了更加精确地确定电子非弹性散射平均自由程,必须对弹性峰电子能谱中的表面激发效应进行修正,通常使用介电响应理论方法计算得到的表面激发参数.然而,通过理论计算得到的表面激发参数不能包含电子在材料内部输运过程中弹性散射的影响,进而影响所测的电子非弹性散射平均自由程的准确度.在这个工作中,我们采用蒙特卡洛方法来确定包含弹性散射效应时的表面激发参数.所得到的表面激发参数在不同能量、角度情况下,尤其是在弹性散射效应显著的60°以上的大角度入射、出射情况下,都与实验测量值符合得非常好.基于这些新确定的表面激发参数,可以在弹性峰电子能谱测量中获得更为准确的电子非弹性散射平均自由程数据.     

Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers

Sensitivity analysis of electronic transport property measurement of silicon wafers with modulated free carrier absorption (MFCA) technique and multi-parameter fitting procedure is performed. The sensitivity of the multi-parameter estimate employing the dependences of the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies covering an appropriate range is theoretically compared with that employing only the dependences of the MFCA amplitude and phase on the modulation frequency. Simulation results show that the dependences of the MFCA amplitude and phase on the pump-probe beam separation are more sensitive to the electronic transport properties of silicon wafers than the frequency dependences. The electronic transport properties of the silicon wafers determined with the two-beam separation dependence are therefore more accurate than that determined with the frequency dependence. Comparative experiments with a silicon wafer are performed and the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity are determined simultaneously and unambiguously with both techniques.     

Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers

A time-domain modulated free-carrier absorption (MFCA) is developed both experimentally and theoretically to investigate the photo-carrier dynamics of silicon wafers illuminated by a square-wave-modulated super-band-gap laser beam. An explicit three-dimensional (3-D) theoretical expression for the temporal behavior of the MFCA signal is obtained by solving a 3-D carrier-diffusion equation The time-domain MFCA model is used to fit the experimental MFCA signals of p- and n-type Si wafers via a multi-parameter fitting procedure to determine simultaneously the electronic transport properties, that is, the bulk lifetime, the ambipolor diffusivity, and the front surface recombination velocity. The uncertainties of the fitted parameter values are estimated.     

Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime, carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.     

低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究

制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO₂作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane （OTS）,phenyltrimethoxysilane （PhTMS）,来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V 关键词： 有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压     

Demonstration of phase correlation in multiwavelength mode-locked semiconductor diode lasers

Wideband spectral phase correlation is demonstrated from a multiwavelength mode-locked semiconductor laser. By use of frequency-resolved optical gating techniques, significant phase correlation was observed between multiple intracavity oscillating wavelengths, with wavelength separations of ~1 nm . The resultant temporal characteristics show a substantial modulation owing to the spectral coupling induced by intracavity-generated four-wave mixing. This result may lead to novel methods for directly generating ultrafast subpicosecond optical pulse sequences with spectrally tailored amplitude and phase characteristics from actively mode-locked semiconductor lasers.     

A high-precision magnetoencephalographic study of human auditory steady-state responses to amplitude-modulated tones

The cerebral magnetic field of the auditory steady-state response (SSR) to sinusoidal amplitude-modulated (SAM) tones was recorded in healthy humans. The waveforms of underlying cortical source activity were calculated at multiples of the modulation frequency using the method of source space projection, which improved the signal-to-noise ratio (SNR) by a factor of 2 to 4. Since the complex amplitudes of the cortical source activity were independent of the sensor position in relation to the subject's head, a comparison of the results across experimental sessions was possible. The effect of modulation frequency on the amplitude and phase of the SSR was investigated at 30 different values between 10 and 98 Hz. At modulation frequencies between 10 and 20 Hz the SNR of harmonics near 40 Hz were predominant over the fundamental SSR. Above 30 Hz the SSR showed an almost sinusoidal waveform with an amplitude maximum at 40 Hz. The amplitude decreased with increasing modulation frequency but was significantly different from the magnetoencephalographic (MEG) background activity up to 98 Hz. Phase response at the fundamental and first harmonic decreased monotonically with increasing modulation frequency. The group delay (apparent latency) showed peaks of 72 ms at 20 Hz, 48 ms at 40 Hz, and 26 ms at 80 Hz. The effects of stimulus intensity, modulation depth, and carrier frequency on amplitude and phase of the SSR were also investigated. The SSR amplitude decreased linearly when stimulus intensity or the modulation depth were decreased in logarithmic steps. SSR amplitude decreased by a factor of 3 when carrier frequency increased from 250 to 4000 Hz. From the phase characteristics, time delays were found in the range of 0 to 6 ms for stimulus intensity, modulation depth, and carrier frequency, which were maximal at low frequencies, low intensities, or maximal modulation depth.     

(InAs)1/(GaSb)1超晶格纳米线第一原理研究

半导体纳米线作为纳米器件的作用区和连接部分具有理想的形状, 把电子运动和原子周期性限制在一维结构当中.通过体材料的已知特性, 有效地选择材料组分使纳米线的低维结构优点更加突出.此外, 还可以通过其他方式来调整纳米线特性, 如控制纳米线直径、晶体学生长方向、结构相、表面晶体学晶面和饱和 度等内部或固有的特性;施加电场、磁场、热场和力场等外部影响. 体材料InAs和GaSb的晶格常数非常相近, 因此InAs/GaSb异质结构晶格失配很小, 可生长成为优良的红外光电子材料.另外, 体材料InAs在二元III---V化合物半导体中具有最低的有效质量, 这使得电子限制在InAs层的InAs/GaSb超晶格具有良好的输运特性. 本文通过第一原理计算研究轴线沿[001]和[111]闪锌矿晶体学方向的 (InAs)₁/(GaSb)₁超晶格纳米线(下标表示分子或双原子单层的数量) 的结构、电子和力学特性, 以及它们随纳米线直径(线径约为0.5---2.0 nm)的变化规律.另外, 分析了外部施加的应力对电子特性的影响, 考察了不同线径(InAs)₁/(GaSb)₁超晶格纳米线的电子带边能级随轴向应变的变化, 从而确定超晶格电子能带的带边变形势.     

Surface state control of III–V semiconductors using molecular modification

An attempt to control surface electronics of III–V semiconductor using wet chemical processes has been performed. Here, we report results on the use of self-assembled monolayers (SAMs) of organic molecules on (0 0 1) GaAs surface. Octadecanethiol (ODT) and benzenethiol (BT) have been the choice in the present study.GaAs wafers were modified by thiol molecules on the flat surface after the native oxide layers are removed by chemical etching under optimized conditions. The change in the electronic properties was measured in terms of transport properties via the SAM layer by conductive probe atomic force microscopy. The current–voltage characteristics thus obtained show that ODT functions as a tunnel barrier while BT is conductive due to the presence of π-electrons. As a result, we can control the electronic states of GaAs–molecule interface for realizing novel device structures by the selection of functional molecules.