Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime, carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.     

丝阵Z箍缩等离子体内爆过程单丝特性研究

研究了丝阵Z箍缩等离子体内爆过程中单丝行为、物理参数匹配、X射线发射情况。根据丝阵Z箍缩等离子体动力学一维模型研制了相关的计算程序，对单丝的内爆过程进行了数值模拟，对丝阵箍缩匹配关系进行了计算，给出了丝阵初始半径、电流脉冲宽度和峰值电流的匹配关系，同时对丝阵内的最小丝间距、材料的选择等问题进行优化研究。     

Thermal Properties of Materials Characterized by Scanning Electron-Acoustic Microscopy

A modified technique of scanning electron-acoustic microscopy is employed to determine thermal diffusivity of materials. Using the dependence of the electron-acoustic signal on modulation frequency of the electron beam, the thermal diffusivity of materials is characterized based on a simplified thermoelastic theory. The thermal diffusivities of several metals characterized by the modified scanning electron-acoustic microscopy are in good agreement with the referential values of the corresponding materials, which proves that the scanning electronacoustic microscopy can be used to characterize the thermal diffusivity of materials effectively. In addition, for micro-inhomogeneous materials, such as biological tissues, the macro-effective （average） thermal diffusivities are characterized by the technique.     

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal-oxide-semiconductor (CMOS) devices. In the present work, SRIM program and photocarrier radiometry (PCR) are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nm-level thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold (Y_ED) of 5.3×10¹⁵ cm^-3 are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.     

方波调制下自由载流子吸收测量半导体载流子输运参数的时域模型

本文建立了用于测量半导体载流子输运特性(载流子寿命、载流子扩散系数和前表面复合速度)的方波调制下自由载流子吸收(free carrier absorption,FCA)检测技术的时域理论模型.通过数值模拟,分析了在不同调制频率下时域曲线的变化趋势以及各个载流子输运参数对时域曲线的影响.结果表明方波调制下的自由载流子吸收的时域信号对各个参数都用较高的灵敏度,且参数值的测量范围大于频域测量范围.     

中国ITER氦冷固态实验包层模块电磁安全分析

在中国ITER固态增殖实验包层模块(CH HCSB-TBM)的最新优化设计基础上,应用ANSYS参数化设计语言编程方法,对ITER实验包层模块(TBM)的电磁安全特性进行了计算分析.计算结果表明:HCSB-TBM最新优化结构设计的电磁安全特性符合设计要求.     

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使用有限元分析方法,初步分析了中国ITER实验包层模块(CHHCSBTBM)在等离子体大破裂时的电磁安全特性。根据CHHCSBTBM设计结构建立了TBM及其子模块的电磁分析模型,模拟了等离子体大破裂情况下的电磁场边界条件,对CHHCSBTBM及其子模块进行了涡流、应力计算,得到了相应的感生涡流和应力分布。根据得到的应力分布,计算出在等离子体大破裂的不同时刻CHHCSBTBM及其子模块受到的电磁扭矩。用计算结果与材料的容许值相比较,确定了TBM设计的电磁安全性。     

聚变堆与聚变堆材料——ITER氦冷固态增殖剂实验包层模块初步设计

ITER将扮演第一次在聚变堆环境下进行包层实验的重要角色。对发展示范聚变堆的一些关键技术，如氚的自持、高等级热负荷的排出、设计标准的确定、安全需求和环境问题等将在ITER实验包层模块（test blanket module，TBM）中进行实验验证。     

Thermal diffusivity of light-emitting diode packaging material determined by photoacoustic piezoelectric technique

Thermal property is one of the most important properties of light-emitting diode (LED).Thermal property of LED packaging material determines the heat dissipations of the phosphor and the chip surface,accordingly having an influence on the light-emitting efficiency and the life-span of the device.In this paper,photoacoustic piezoelectric (PAPE) technique has been employed to investigate the thermal properties of polyvinyl alcohol (PVA) and silicon dioxide,which are the new and the traditional packaging materials in white LED,respectively.Firstly,the theory of PAPE technique has been developed for two-layer model in order to investigate soft materials;secondly,the experimental system has been set up and adjusted by measuring the reference sample;thirdly,the thermal diffusivities of PVA and silicon dioxide are measured and analysed.The experimental results show that PVA has a higher thermal diffusivity than silicon dioxide and is a better packaging material in the sense of thermal diffusivity for white LED.     

基于水下双目视觉的燃料组件变形检测系统

燃料组件变形状态是堆芯运行过程中的重要监测指标，基于水下双目视觉的变形检测系统不仅能获得燃料组件关键参数的三维尺寸，还可以测量组件的整体轮廓。根据水下大型燃料组件的高热、高辐射特点，研制了一种基于16台摄像单元的水下双目检测系统，并给出各组成模块的详细设计；通过联合Harris特征点和区域灰度互相关方法，实现辐射噪声干扰下的双目摄像模块的组内快速图像配准。经模拟水池和核电现场实验，验证系统局部参数测量精度优于0.2 mm，全局参数测量精度满足0.5 mm，为高热、高辐射的水下乏燃料组件的局部变形和整体弯曲等参数测量提供有力工具。