Optimization of Passively Q-switched Lasers by Taking into Account Intracavity Laser Spatial Distribution

The intracavity photon density and the initial population-inversion density in the diode-pumped passively Q-switched lasers are assumed to be Gaussian spatial distributions. The space-dependent rate equations are solved numerically. The key parameters of an optimally coupled passively Q-switched laser under Gaussian approximation are determined, and a group of general curves are generated for the first time. These key parameters include the optimal normalized coupling parameter and the optimal normalized saturable absorber parameter that maximize the output energy, and the corresponding normalized energy, normalized peak power, and normalized pulse width. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium, the saturable absorber, and the resonator. In addition, the importance including the space variation is also shown. The optimal calculations for a diode-pumped passively Nd: YVO₄ laser are presented to demonstrate the use of the curves and the related formulas.     

Optimization of peak power of passively Q-switched lasers by taking into account intracavity laser spatial distribution

The intracavity photon density and the initial population-inversion density in the diode-pumped passively Q-switched lasers are assumed to be Gaussian spatial distributions. The space-dependent rate equations are solved numerically. The key parameters of an optimally coupled passively Q-switched laser under Gaussian approximation are determined, and a group of general curves are generated for the first time. These key parameters include the optimal normalized coupling parameter and the optimal normalized saturable absorber parameter that maximize the peak power, and the corresponding normalized energy, normalized peak power, and normalized pulse width. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium, the saturable absorber, and the resonator. In addition, the importance including the space variation is also shown. The optimal calculations for a diode-pumped passively Nd:YVO₄ laser are presented to demonstrate the use of the curves and the related formulas.     

Optimization of the pulse energy of GaAs saturable absorber Q-switched lasers

By taking into account the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs, the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, and the pumping and the spontaneous emission during the pulse formation, the new normalized rate equations of a GaAs saturable absorber Q-switched laser are solved. The key parameters of an optimally coupled GaAs saturable absorber Q-switched laser are determined, including the optimal normalized coupling parameter and the optimal normalized GaAs saturable absorber parameters, which can maximize the pulse energy, and a group of general curves are generated for the first time, which clearly show the dependence of the optimal key parameters on the parameters of the gain medium, the GaAs saturable absorber, and the resonator. In addition, the influence including the space variation, the pumping and the spontaneous emission is also shown. Sample calculations for a diode-pumped Nd³⁺:YVO₄ laser with a GaAs saturable absorber are presented to demonstrate the use of the curves and the relevant formulas.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Optimization of pulse width of double passively Q-switched lasers with GaAs and Cr-doped saturable absorbers

Compared with a single passively Q-switched laser, a double passively Q-switched laser with a GaAs saturable absorber and a Cr⁴⁺-doped saturable absorber can produce more symmetric and shorter pulses with high pulse peak power. New normalized coupled rate equations for a double passively Q-switched laser with both a GaAs saturable absorber and a Cr⁴⁺-doped saturable absorber are solved numerically, where the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined. The Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density are considered. The optimization of a double passively Q-switched laser to obtain the shortest pulse width is performed, and a group of general curves are generated for the first time. The curves clearly show the dependence of the optimal normalized parameters on the parameters of the gain medium, the GaAs saturable absorber, the Cr⁴⁺-doped saturable absorber and the spatial distributions of the intracavity photon density. Sample calculations for a diode-pumped Nd³⁺:YVO₄ laser with both a GaAs saturable absorber and a Cr⁴⁺:YAG saturable absorber are presented to demonstrate the use of the curves and the related formulas.     

Optimization of the passively Q-switched laser with a novel central semiconductor saturable absorption mirror (C-SESAM)

The diode-pumped passively Q-switched laser, realized with a novel central semiconductor saturable absorption mirror (C-SESAM), can obtain much higher repetition rate and shorter pulse duration which have been proved theoretically and experimentally. Therefore, it is essential to optimize this kind of lasers to achieve many of the desired properties. The normalized rate equations are solved numerically, when the direct band-gap absorption of the InGaAs thin layer, the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs substrate are simultaneously considered. Some new normalized parameters are introduced and the key parameters of an optimally passively Q-switched laser are determined, including the optimal normalized coupling parameter and the optimal normalized saturable absorber parameters, which can maximize the output energy. A group of general curves are generated, and sample calculations for a diode-pumped Nd³⁺:YVO₄ laser with a novel central semiconductor saturable absorption mirror (C-SESAM) are presented to demonstrate the use of the curves and the relevant formulas.     

Optimization of passively Q-switched laser with V:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched laser with V³⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively Q-switched laser with V³⁺:YAG at 1342 nm are determined. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched pulse. The optimal calculations for a diode-pumped passively Q-switched a-Nd:GdVO₄ laser with V³⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Optimization of the peak power of doubly Q-switched lasers with both an acousto-optic modulator and a GaAs saturable absorber

The key parameters of an optimally coupled doubly Q-switched laser are determined by maximizing the peak power. A group of general curves are generated by considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs, along with the Gaussian spatial distributions of the intracavity photon density, the initial population-inversion density and the influence of the acousto-optic (AO) Q-switch. These results are compared with the results obtained when maximizing the output energy of the doubly Q-switched laser, and the differences between these approaches are discussed. Sample calculations for a laser-diode-pumped Nd³⁺:YVO₄ laser with both an AO modulator and a GaAs saturable absorber are presented to demonstrate the use of the curves and the relevant formulas.     

Optimization of passively Q-switched and mode-locked laser with Cr:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with Cr⁴⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively QML laser are determined for the first time. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. The optimal calculations for a diode-pumped passively QML Nd:GdVO₄ laser with Cr⁴⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Laser–diode-pumped passively Q-switched Nd:NaY(WO4)2 laser with GaAs saturable absorber

A laser–diode-pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

激光二极管抽运的被动调QNd3+:YAG微晶片激光器及其稳定性

从理论和实验两个方面研究了连续激光二极管抽运的Cr~(4+):YAG被动调QNd~(3+):YAG微晶片激光器。考虑Cr~(4+):YAG饱和吸收体激发态吸收,推导了连续抽运的被动调Q微晶片激光器的速率方程,分析了微晶片参量对调Q脉冲半峰全宽和峰值功率的影响;提出了实现稳定脉冲输出的微晶片激光器设计原则。在饱和吸收体初始透过率较低(T_0≈40％)的情况下,获得了脉冲峰值功率不稳定性小于±0.7％、脉冲宽度不稳定性小于±1.0％、峰值功率高达千瓦量级的高重复频率激光输出。     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

Passive Q-switching of a laser-diode-pumped intracavity-frequency-doubling Nd:NYW/KTP laser with GaAs saturable absorber

Passive Q-switching of a laser-diode-pumped intracavity-frequency-doubling Nd:NYW/KTP laser has been realized with GaAs semiconductor saturable absorber. The dependence of pulse repetition rate, pulse energy, and pulse width on incident pump power are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

Diode-pumped doubly passively Q-switched Nd:LuVO4/KTP green laser with Cr:YAG and GaAs saturable absorbers

A diode-pumped doubly passively Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with Cr⁴⁺:YAG and GaAs saturable absorbers is demonstrated. This laser can generate the shorter pulse width with higher peak power compared with the singly passively Q-switched green laser with Cr⁴⁺:YAG or GaAs saturable absorber. The relations between the pulse symmetry and the ratio of the small-signal transmissions of two saturable absorbers are investigated. By reasonably choosing the small-signal transmissions of both saturable absorbers, the doubly passively Q-switched green laser can generate the much more symmetric pulse profile. The coupled rate equations are used to simulate the passively Q-switched process of the green laser by considering the Gaussian transversal and longitudinal distributions of the intracavity photon density. The numerical results of the equations are consistent with the experimental results.     

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.     

Optimization of the slowly actively Q-switched laser

By taking into account turnoff time of the slowly active Q-switch, the coupled equations of a slowly actively Q-switched laser are given. These rate equations are solved numerically. The key parameters of an optimally coupled actively Q-switched laser with the turnoff time are determined, and a group of general curves are generated for the first time. These key parameters include the optimal normalized coupling parameter which maximizes the output energy, and the corresponding normalized energy, normalized peak power and normalized pulse width. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium and the resonator. In addition, the importance of including turnoff time of the slowly active Q-switch is also shown. The optimal calculations for an actively Q-switched Nd:YVO₄ laser with acoustic–optic modulator are presented to demonstrate the use of the curves and the related formulas.     

氧化石墨烯被动调Q掺铒光纤激光器

报道了基于氧化石墨烯的被动调Q掺铒光纤激光器。激光器采用环形腔结构,调Q器件为自制的氧化石墨烯可饱和吸收镜。泵浦功率在81~505 mW范围内时,得到了重复频率68~124 kHz的稳定的调Q脉冲输出,脉宽为0.47~1.60 s。由于泵浦功率限制,激光器最大输出功率为10 mW, 相应单脉冲能量为80.6 nJ。此种基于氧化石墨烯可饱和吸收体的被动调Q光纤激光器体积小、成本低廉、结构简单、稳定性高、光束质量高,具有广阔的应用前景。     

Theoretical and experimental study of a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO4/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber

By considering the Gaussian transversal and longitudinal distributions of the intracavity photon density as well as the walk-off effect of KTP crystal, the coupled rate equations of the doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber are given. These equations are solved numerically and the doubly Q-switched green laser characteristics, such as the pulse width and the pulse symmetry, have been obtained. In the experiment, a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with AO and GaAs is presented. This doubly Q-switched green laser can generate the almost absolutely symmetric pulse profile with the shorter pulse width and the higher power than the singly Q-switched green laser. The experimental results are in agreement with the theoretically numerical calculations.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.