Continuous-wave and Q-switched laser operation of Nd:Gd0.18Y0.82VO4 mixed crystal

Efficient continuous-wave (cw), passively Q-switched, and actively Q-switched laser operations are demonstrated with a mixed vanadate crystal of Nd:Gd_0.18Y_0.82VO₄ under diode pumping. In a cw operation, an output power of 8.25 W is obtained at a maximum available incident pump power (P_in) of 15 W, with a slope efficiency of 56%. Using a Cr⁴⁺:YAG crystal of initial transmission of 62% as the saturable absorber for Q-switching, an average output power of 3.05 W is generated at pulse repetition frequency (PRF) of 16.7 kHz when the laser is pumped with the same maximum P_in. The pulse energy, pulse duration, and peak power are 183.3 μJ, 6.0 ns, and 30.6 kW, respectively. When actively Q-switched by an acousto-optic modulator, the laser produces an average output power of 5.5 W at PRF of 30 kHz with 16.2 W of pump power incident upon the laser crystal. The pulse energy, duration, and peak power are measured to be 183 μJ, 10.5 ns, and 17.5 kW, respectively.     

Actively Q-switched laser performance comparison between Nd:Lu0.15Y0.85VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 mixed crystals

By using acousto-optic (AO) modulator as active Q-switch, the diode-pumped actively Q-switched Nd:Lu_0.15Y_0.85VO₄ and Nd:Lu_0.33Y_0.37Gd_0.3VO₄ lasers are realized. The average output power and the pulse width under different AO repetition rates are measured. The actively Q-switched laser performances for two kind mixed crystals are compared for the first time. The experimental results show that the actively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power in comparison with the actively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser. Due to broader fluorescence line-width, the triple-mixed crystal Nd:Lu_0.33Y_0.37Gd_0.3VO₄ is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Diode-pumped doubly passively Q-switched Nd:LuVO4/KTP green laser with Cr:YAG and GaAs saturable absorbers

A diode-pumped doubly passively Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with Cr⁴⁺:YAG and GaAs saturable absorbers is demonstrated. This laser can generate the shorter pulse width with higher peak power compared with the singly passively Q-switched green laser with Cr⁴⁺:YAG or GaAs saturable absorber. The relations between the pulse symmetry and the ratio of the small-signal transmissions of two saturable absorbers are investigated. By reasonably choosing the small-signal transmissions of both saturable absorbers, the doubly passively Q-switched green laser can generate the much more symmetric pulse profile. The coupled rate equations are used to simulate the passively Q-switched process of the green laser by considering the Gaussian transversal and longitudinal distributions of the intracavity photon density. The numerical results of the equations are consistent with the experimental results.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO4/KTP green laser with AO and GaAs

By simultaneously using both active and passive Q-switches in the same cavity, a diode-pumped doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs semiconductor saturable absorber is realized. A comparison between c-cut and a-cut Nd:GdVO₄ crystals shows that the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate narrower pulse and higher peak power when the incident pump power is higher than 4.4 W. In addition, the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate more symmetric and shorter pulse in comparison with singly AO- or GaAs-Q-switched laser. The coupled rate equations are used to simulate the process of these lasers.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Compact and efficient Kerr-lens mode-locked diode-pumped actively Q-switched YVO4-Nd:YVO4 laser

By using a simple linear configuration, a stable and efficient YVO₄-Nd:YVO₄ laser, actively Q-switched by an acousto-optic modulator and passively mode-locked by KLM is realized, from which the great average output power, the high efficiency are obtained and the mode-locked pulse inside the Q-switched pulse has a repetition rate of 470 MHz. The nearly 100% modulation depth of the Q-switched mode-locked pulses can be obtained at any pump power over the threshold. Considering the Kerr-lens effect of laser medium and Q-switching by an acousto-optic modulator, we have analyzed the self-mode-locked YVO₄-Nd:YVO₄ laser by using the nonlinear ABCD propagation matrix and the hyperbolic fluctuation mechanism. The numerical solutions are in good agreement with the experimental results.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

Passively Q-switched self-frequency doubling Nd:Ca4GdO(BO3)3 laser with Cr:YAG saturable absorber

Nd³⁺ : Ca₄GdO(BO₃)₃, known as Nd : GdCOB, is a new self-frequency doubling laser crystal. Using Cr⁴⁺ : YAG as passive Q-switch, we have realized the Q-switched laser running at 0.53 μm with an Nd : GdCOB crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under different small-signal transmission of Cr⁴⁺ : YAG and different pump conditions are measured and the numerical solutions of the coupling wave rate equations agree with the experimental results.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

Theoretical and experimental study of a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO4/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber

By considering the Gaussian transversal and longitudinal distributions of the intracavity photon density as well as the walk-off effect of KTP crystal, the coupled rate equations of the doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber are given. These equations are solved numerically and the doubly Q-switched green laser characteristics, such as the pulse width and the pulse symmetry, have been obtained. In the experiment, a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with AO and GaAs is presented. This doubly Q-switched green laser can generate the almost absolutely symmetric pulse profile with the shorter pulse width and the higher power than the singly Q-switched green laser. The experimental results are in agreement with the theoretically numerical calculations.     

Passively Q-switched Nd:GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO₄ laser operating at 1.06 μm with In_0.25Ga_0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 μJ and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Characteristics of a passively Q-switched Nd:NaY(WO4)2 laser with Cr:YAG saturable absorber

By using xenon flash lamp as pump source and Cr⁴⁺:YAG as passive Q-switcher, we have performed the Q-switched laser operation at 1.06 μm with an Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under different small-signal transmissions of Cr⁴⁺:YAG and different reflectivities of output reflector are measured, and the numerical solutions of the coupling wave rate equations agree with the experimental results.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Diode-pumped doubly Q-switched YVO4/Nd:YVO4 laser with BBO electric-optic Q-switch and Cr4+:YAG saturable absorber

In the experiment, we have demonstrated the performance of a laser-diode, end-pumped, doubly Q-switched YVO₄/Nd:YVO₄ laser with both a BBO electric-optic (EO) Q-switch and Cr⁴⁺:YAG saturable absorber. At a maximum incident pump power of 15 W and an EO Q-switch repetition rate of 8 kHz, the stable laser pulses with the pulse duration 5.28 ns, the single pulse energy 0.14 mJ, and the pulse peak power 26 kW are obtained. The experimental results show that the double Q-switched laser with EO and Cr⁴⁺:YAG can generate the shorter pulse and the higher peak power in comparison to singly Q-switched laser with EO.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.