Modulated Pulse Generations in a Laser-diode-pumped Passively Q-switched Intracavity-frequency-doubling Nd:YVO4 Laser

The investigative results of modulated pulse output from an LD end-pumped passively Q-switched intracavity-frequency-doubling Nd:YVO4/KTP laser with Cr4+:YAG saturable absorber are presented. The numerical stimulations of these modulated pulses are carried out basing on the rate equations. It indicated that the modulations are attribute to the frequency beating of two eigenstates of the resonant polarized modes. The theoretical calculations are in good agreement with the experimental observations.     

高重复频率1.34μm调Q锁模Nd:YVO_4激光器

报道了基于V:YAG可饱和吸收体的1.34μm被动调Q锁模Nd:YVO4激光器。采用直腔结构,使用透过率为10%的输出镜,在LD端面泵浦的情况下,实现了重复频率高达2.6GHz的1.34μm调Q锁模运转。Nd:YVO4晶体中,Nd3+离子掺杂质量分数为0.2%,V:YAG晶体的初始透过率为83%。在泵浦功率为11 W时,1.34μm调Q锁模激光的最大平均输出功率为308mW,光-光转换效率为2.8%。     

Modulated Pulse Generations in a Laser-diode-pumped Passively Q-switched Intracavity-frequency-doubling Nd∶YVO4 Laser

The investigative results of modulated pulse output from an LD end-pumped passively Q-switched intracavity-frequency-doubling Nd∶YVO4/KTP laser with Cr4+∶YAG saturable absorber are presented. The numerical stimulations of these modulated pulses are carried out basing on the rate equations. It indicated that the modulations are attribute to the frequency beating of two eigenstates of the resonant polarized modes. The theoretical calculations are in good agreement with the experimental observations.     

Analysis of a laser-diode end-pumped passively Q-switched Nd:GdVO4 laser with V3+:YAG saturable absorber

By considering both the transversal and longitudinal Gaussian spatial distribution of the intracavity photon density, a couple of rate equations describing a laser-diode end-pumped passively Q-switched Nd:GdVO₄ laser with V³⁺:YAG saturable absorber have been proposed. Solving these space-dependent rate equations numerically, we obtain the dependences of pulse width, pulse repetition rate, single-pulse energy and peak power on pump power. In the experiment, a laser-diode end-pumped Nd:GdVO₄ laser passively Q-switched by a V³⁺:YAG saturable absorber has been realized, and the experimental results are consistent with the theoretical calculations.     

AlGaInAs半导体饱和吸收体调Q特性的理论与实验研究究

利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808 nm LD泵浦的Nd:YVO₄键合晶体进行被动调Q,获得了波长为1.06 mm的激光脉冲,测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化。当泵浦功率为10.57 W时,激光平均输出功率为3.45 W,斜效率为39 %,重复频率达到最大值101 kHz。当泵浦功率为8.07 W时,脉冲宽度达到最小值1.76 ns。利用速率方程对该激光器进行理论分析,计算出输出脉冲能量、峰值功率、脉冲宽度和重复频率的理论值,实验结果和理论结果基本一致。     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

Passively Q-switched laser performance of the mixed crystals Nd:Lu0.15 Y0.85 VO4, Nd:Lu0.5 Y0.5 VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 with GaAs saturable absorber

By using the mixed crystals Nd:Lu_0.15 Y_0.85 VO₄, Nd:Lu_0.5Y_0.5VO₄ and Nd:Lu_0.33Y_0.37Gd_0.3VO₄ as laser media, the LD pumped passively Q-switched mixed lasers with GaAs saturable absorber are realized. The average output power, the pulse width etc. have been measured and compared. The experimental results show that the passively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power due to broader fluorescence line-width. Under Gaussian spatial distribution approximation, the rate equations for LD pumped passively Q-switched lasers of the mixed crystals with GaAs saturable absorber are given. The numerical solutions of the equations are in agreement with the experimental results.     

Single output LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror

A quarter-wave plate and the thin film polarizer(TFP) are used for the LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror(SESAM) to obtain a single beam output with a total power of 4.8 W.An optical-optical efficiency is achieved to be 24% for a stable CW mode-locking operation at 1064 nm,with a pulse repetition rate of 70 MHz and pulse width of 16 ps.The multipulse in the pulse sequence is eliminated for reaching a peak power as high as 4 kW.     

Diode-pumped doubly passively Q-switched Nd:LuVO4/KTP green laser with Cr:YAG and GaAs saturable absorbers

A diode-pumped doubly passively Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with Cr⁴⁺:YAG and GaAs saturable absorbers is demonstrated. This laser can generate the shorter pulse width with higher peak power compared with the singly passively Q-switched green laser with Cr⁴⁺:YAG or GaAs saturable absorber. The relations between the pulse symmetry and the ratio of the small-signal transmissions of two saturable absorbers are investigated. By reasonably choosing the small-signal transmissions of both saturable absorbers, the doubly passively Q-switched green laser can generate the much more symmetric pulse profile. The coupled rate equations are used to simulate the passively Q-switched process of the green laser by considering the Gaussian transversal and longitudinal distributions of the intracavity photon density. The numerical results of the equations are consistent with the experimental results.     

Diode end-pumped passively Q-switched Nd:YAG ceramic laser with Cr4+:YAG saturable absorber

We report on a diode end-pumped passively Q-switched Nd:YAG ceramic laser. By using a Cr⁴⁺:YAG single crystal with an 80% initial transmission as the saturable absorber, stable Q-switched pulses with a 126-μJ pulse energy, a 12-ns pulse width, and an 8.4-kHz pulse repetition rate have been obtained. The Q-switching performance of the laser under different saturable absorption strengths and output couplings was experimentally investigated.     

激光二极管抽运的Nd:GdVO4激光器

用高亮度激光二极管作抽运源 ,研究了连续、腔内倍频和被动调 Q Nd:Gd VO4 激光器的输出特性。在抽运功率为 881m W时获得了 119m V的连续绿光输出 ,光 -光转换效率 13.5%。用Cr4 :YAG作可饱和吸收体实现了 Nd:Gd VO4 激光器的被动调 Q运转 ,脉冲宽度为 116～ 2 4 ns,重复频率在 50 0 k Hz～ 1.8MHz范围内可调。     

Multi-watt Q-switched Nd:YVO_4 laser with GaAs output coupler

A passively Q-switched operation of a diode-pumped Nd.YVO_4 laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveQ-switching dynamics of GaAs is presented.     

Passively Q-switched and mode-locked laser performance of the mixed crystals with GaAs saturable absorber

By using the mixed crystals Nd:Lu_0.33Y_0.37Gd_0.3VO₄, Nd:Lu_0.5Y_0.5VO₄ and Nd:Lu_0.15Y_0.85VO₄ as laser media, the LD pumped passively Q-switched and mode-locked (QML) lasers with GaAs saturable absorber are realized. The average output power, the pulse width and the repetition rates have been measured and compared. The experimental results show that the passively Q-switched and mode-locked Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power due to broader fluorescence line-width. By considering the Gaussian distribution of the intracavity photon density and the influence of the continuous pump rate, the coupled rate equations for QML lasers with GaAs saturable absorber are given. The theoretical solutions of the equations are in agreement with the experimental results.     

Optimization of passively Q-switched and mode-locked laser with Cr:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with Cr⁴⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively QML laser are determined for the first time. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. The optimal calculations for a diode-pumped passively QML Nd:GdVO₄ laser with Cr⁴⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Laser–diode-pumped passively Q-switched Nd:NaY(WO4)2 laser with GaAs saturable absorber

A laser–diode-pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

被动调Q自拉曼Nd∶GdVO4激光器

对激光二极管(LD)抽运的自拉曼Nd∶GdVO4被动调Q激光器进行了详细的理论和实验研究。实验中采用Nd∶GdVO4晶体同时作为激光介质和拉曼晶体,分别用了两块不同初始透射率的Cr4 ∶YAG晶体,得到并比较了采用不同初始透射率的Cr4 ∶YAG晶体时被动调Q自拉曼激光器的性能。测量了平均输出功率、脉冲宽度和脉冲重复率随抽运功率的变化关系。当Cr4 ∶YAG的初始透射率为0.91,输入功率是5.7 W时,得到的拉曼光的最高功率为244.6 mW,相应的转换效率为4.3%。通过数值求解基频光和拉曼光空间分布的速率方程并应用到被动调Q自拉曼Nd∶GdVO4激光器。获得的理论结果与实验结果大致相符。     

LD抽运Cr4+∶YAG高重复率被动调Q Nd∶YVO4激光器

采用Cr4+∶YAG晶体作为可饱和吸收体，实现连续激光二极管（LD）端面抽运的Nd∶YVO4激光器的高重复率被动调Q.在注入抽运功率为8.8 W时，得到重复频率23.8 kHz、平均功率1.21 W的调Q脉冲序列；每个脉冲能量为51 μJ、脉宽为25 ns、峰值功率达到2.03 kW.实验上研究了脉冲重复频率、平均输出功率、脉冲宽度、单脉冲能量与抽运功率、输出镜透过率的关系.实验结果表明，当抽运功率较大时，脉冲重复频率和输出平均功率随着抽运功率的增加而减小，对此进行了合理的理论解释.     

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.     

Diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

A diode end-pumped passively Q-switched Nd:YVO₄ laser with a transmission-type single-walled carbon nanotube saturable absorber is first demonstrated in this paper. The maximum continuous wave (CW) output power of 477 mW is obtained at the incident pump power of 1490 mW with the output transmission T = 10%, resulting in slope efficiency of 41.3%. For Q-switching operation, the measured pulse duration of 332 ns, the pulse energy of 326 nJ and the peak power of 982 mW are respectively obtained.