共查询到19条相似文献,搜索用时 109 毫秒
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《物理学报》2017,(6)
在黑硅表面制备的微结构可以使其获得多种表面功能,这些功能在太阳能、探测器等领域具有广泛的应用.因此,黑硅微结构的形成机理及制备条件优化一直是研究关注的焦点.本文的研究发现,随着激光辐照量(提高单脉冲能量或增加积累脉冲数)的增加会遇到形貌尺寸生长的瓶颈效应:过多的能量累积对微结构的优化和控制并没有进一步的作用.理论计算结果表明,产生这一现象的原因是前序飞秒激光脉冲诱导产生的微结构形貌对当前激光脉冲能量的吸收产生了调制,使当前激光脉冲的有效烧蚀效率降低.根据这一飞秒激光烧蚀规律,提出了一种优化表面形貌的新方案——在辐照激光总能量一定的条件下,通过改变激光能量的分配方式(单脉冲能量与脉冲数的组合)可实现表面形貌的优化.这一新的工作方式不但可以提高黑硅的制备效率,而且还有助于减少飞秒加工过程带来的表面缺陷及损伤,并降低加工过程中的能源消耗.这一研究成果对黑硅性能的进一步提升及其工程应用具有重要的意义. 相似文献
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利用钛宝石飞秒激光脉冲对单晶硅在SF6、空气和真空环境中进行了累积脉冲辐照,研究了硅表面微结构的演化。在SF6气氛中,在激光辐照的初始阶段,硅表面形成了1维的波纹结构,随着辐照脉冲数的增加,波纹结构演化成了2维凹凸结构。累积600个脉冲后,硅表面产生了准规则排列且具有大纵横比的锥形尖峰结构。该结构呈现高度相对较低、锥形尖端小球不明显的特征,分析认为主要与环境气压的大小有关。对比空气、SF6和真空中的微结构发现,尖峰的数密度依次减小;SF6中形成的尖峰高度最大,其次为真空,再次为空气。研究结果表明,真空、SF6和空气3种环境下微结构的形成及表面形貌主要由激光烧蚀、化学刻蚀和氧化决定。 相似文献
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利用Nd:YAG纳秒激光脉冲,在能量密度为1~10 J/cm2范围内辐照单晶硅,形成了表面锥形微结构,在SF6气氛和空气环境下均形成了锥形尖峰表面微结构。SF6气氛下产生的锥形尖峰顶端都有小球,部分锥形上还有二次尖峰形成,空气中纳秒激光诱导的锥形尖峰微结构顶端和边缘有由液滴固化形成的粒状物质,不同于利用准分子纳秒激光诱导的细长须状结构和飞秒激光辐照下产生的具有表面枝蔓状纳米结构的锥形微结构。实验结果表明,这种尖峰微结构的形成与辐照激光的波长和脉冲持续时间有关。对空气中微构造硅的辐射反射的初步研究表明,在500~2 400 nm范围内的光辐射反射率不高于20%。 相似文献
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在一定条件SF6气体氛围中,硅可在飞秒激光辐照区产生m量级的尖峰结构。针对不同尖峰高度的微构造硅,在不同温度下退火,采用电子蒸发的方法在正反面分别镀上铝电极,制备出了飞秒激光微构造光电二极管,并测试了其光电响应。实验结果表明:飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3~4 m的样品在973 K温度退火30 min后,响应度可达0.55 A/W。即使在1100 nm波长处,这种新型的硅光电二极管的响应仍可高达0.4 A/W。 相似文献
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采用波长800nm的飞秒激光对硬质合金YG6表面进行多脉冲加工,利用光学显微镜测量微凹坑损伤形貌及损伤直径,研究了飞秒激光在不同能量密度和脉冲数下硬质合金YG6的损伤阈值和损伤直径的变化规律及其损伤机制.试验结果表明:硬质合金YG6的多脉冲损伤阈值随着脉冲数增加而降低,呈现明显的累积效应.试验得到了多脉冲飞秒激光加工YG6的损伤阈值、损伤直径与脉冲数及中心能量密度的定量关系,YG6多脉冲损伤阈值主要与脉冲数相关,由单脉冲损伤阈值和累积系数共同决定,试验得到YG6单脉冲损伤阈值为1.14±0.06J/cm2,累积系数为0.84±0.02.损伤直径主要与光束中心能量密度和脉冲数相关,由光束束腰半径,单脉冲损伤阈值和累积系数共同决定.试验采用多组平均功率和脉冲数对YG6进行烧蚀,验证了单脉冲损伤阈值和累积系数的可靠性. 相似文献
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《光子学报》2021,50(6)
利用飞秒激光双光束干涉技术,结合柱透镜线扫描技术,在30 s内制备了面积为10 mm×10 mm的微米-纳米复合结构,极大地提升了激光加工效率。飞秒激光刻蚀后的硅表面包含双光束干涉引起的长周期微米结构,以及飞秒激光诱导的纳米周期结构。微米-纳米复合结构极大地提升了表面粗糙度,在毛细效应的作用下,硅在空气中显示出超亲水性,接触角从40°降为0°。测量烧蚀前后硅表面的X射线光电子能谱,发现激光加工后硅表面的Si-OH和H_2O分子的含量分别增加22.3%和13.6%,这进一步增强了硅表面的亲水性。随着激光照射功率的增加以及扫描速度的下降,硅表面接触角逐步下降。本文研究为高效制备大面积超亲水结构提供了新方法,在热传导、生物芯片等领域具有潜在的应用价值。 相似文献
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飞秒激光形成的半导体低维结构与发光 总被引:1,自引:0,他引:1
采用飞秒激光辐照硅和硅锗样品,用扫描电子显微镜(SEM)观察样品同,发现样品上产生了某低维结构.用飞秒激光作用产生等离子体相干驻波对硅和硅锗表面的融蚀模型来解释低维结构的形成机制,发现硅的表面周期约为400 nm的光栅结构在波长719 nm处有较强的光致荧光(PL)峰.该光致荧光的发光强度较小,其机制可从激光的脉宽和重复率两个方面来分析.当激光辐照的能量明显超过硅的融蚀阈值时,光栅形状消失,另一种锥状结构开始形成.控制加工条件,可以获得用于衍射和微分束的纳米光栅. 相似文献
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Wang Fang Chen Changshui He Huili Liu Songhao 《Applied Physics A: Materials Science & Processing》2011,103(4):977-982
Black silicon, which is obtained by irradiating the surface of a Si wafer with femtosecond laser pulses in the presence of
a sulfur-bearing gas, holds great promise in the preparation of high-performance intermediate band silicon solar cells. Using
a three-level model, the enhanced usefulness of sunlight of the microstructured silicon was firstly analyzed. A detailed study
on the relationship between the light loss, the ionization energy of doped impurities in silicon and the impurity band width
were given. Then the effect of the position of intermediate band within the forbidden gap of silicon on the theoretical conversion
efficiency for the corresponding solar cell is discussed using the Detailed Balance Theory. Finally problems need to be resolved
in making intermediate band solar cells based on femtosecond laser microstructured silicon are pointed out with great emphasis. 相似文献
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The atomic, charge and energy distributions of ions in expanding femtosecond laser plasmas have been studied by means of time-of-flight mass–charge spectroscopy. High-energy negative and positive ions with energies of up to 35 keV have been detected during the interaction of 200-fs laser pulses (I2×1016 W/cm2) with silicon, titanium and other solid targets. A high correlation between negative and positive single-charged ions of the identical atomic number is shown. Negative ions are produced as a result of collisions of fast single-charged ions and neutrals with molecules of residual gas. PACS 52.50.Jm; 52.70.Nc; 52.38.Ph 相似文献
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半绝缘6H型碳化硅(6H-SiC)具有高电阻率性质,在可见光照射下进行光电导测量时,通常光生电流很小;然而经过飞秒激光辐照改性之后,发现在可见光波段的光电导有明显的增益.本文利用紫外-可见-近红外吸收谱、X射线光电子能谱和发光光谱测量分析了激光改性之后碳化硅样品的光谱吸收、发射和晶体元素比例变化情况.分析认为碳化硅光电导增益的原因是飞秒激光辐照过程改变了碳化硅表面的硅碳元素的原子浓度比,形成新的物质结构形式,从而导致了表面光电导性能的提高. 相似文献
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We microstructured silicon surfaces with femtosecond laser irradiation in the presence of SF6. These surfaces display strong absorption of infrared radiation at energies below the band gap of crystalline silicon. We report the dependence of this below-band gap absorption on microstructuring conditions (laser fluence, number of laser pulses, and background pressure of SF6) along with structural and chemical characterization of the material. Significant amounts of sulfur are incorporated into the silicon over a wide range of microstructuring conditions; the sulfur is embedded in a disordered nanocrystalline layer less than 1 m thick that covers the microstructures. The most likely mechanism for the below-band gap absorption is the formation of a band of sulfur impurity states overlapping the silicon band edge, reducing the band gap from 1.1 eV to approximately 0.4 eV. PACS 78.68.+m; 81.15.Fg; 81.40.Tv; 81.65.Cf; 85.60.Gz 相似文献
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Optical trapping (also called optical tweezers) is a widespread technique, with a large number of applications in biology and other fields. Taking femtosecond laser pulses as a sampling of CW light, we theoretically demonstrate the feasibility of femtosecond laser tweezers and present the formulae of the induced forces which femtosecond laser pulses exert on micrometer-sized spheres. We also demonstrate the stability condition for femtosecond laser tweezers. As an example, we present the numerical results for a sphere with a radius of 10 mm. 相似文献
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Juergen Reif Olga Varlamova Sebastian Uhlig Sergej Varlamov Michael Bestehorn 《Applied Physics A: Materials Science & Processing》2014,117(1):179-184
We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples. 相似文献
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S. Baudach J. Bonse W. Kautek 《Applied Physics A: Materials Science & Processing》1999,69(7):S395-S398
Some applications of polymer films require the microstructuring of partly uneven substrates. This cannot be achieved by conventional photolithography, usually performed with ultraviolet short-pulse lasers (excimer, fourth harmonic Nd:YAG). When processing thermally sensitive or undoped polymers with low optical absorption, the use of femtosecond laser pulses can improve the ablation precision, also reducing the heat-affected zone. Therefore, a Ti:sapphire laser system was employed to perform ablation experiments on polyimide (PI). The irradiated areas were evaluated by means of optical and scanning electron microscopy. Highly oriented ripple structures, which are related to the polarization state of the laser pulses, were observed in the cavities. The relationship between the ablation threshold fluence and the number of laser pulses applied to the same spot is described in accordance with an incubation model. 相似文献