飞秒激光制备黑硅的光谱特性

本文采用飞秒激光在空气中对单晶硅进行扫描处理,在硅表面制备出平行排列并具有微尺度沟槽的黑硅材料。在扫描电子显微镜下,观察到了黑硅的纳米尺度的二级结构。通过黑硅的反射光谱发现,在250~1000nm光谱区域的反射率明显降低,且沟槽越深,反射率越低。同时,对沟槽深度与反射率的关系以及二级纳米结构的形貌进行了讨论。通过黑硅的拉曼光谱发现,飞秒激光处理后的硅片没有发生成分和结构上的变化,黑硅的成分依然是单晶硅。     

Few-layer graphene film fabricated by femtosecond pulse laser deposition without catalytic layers

The films of few-layer graphene are formed through laser exfoliation of a highly ordered pyrolytic graphite(HOPG), without a catalytic layer for the growth process. The femtosecond(fs) laser exfoliation process is investigated at different laser fluences and substrate temperature. For fs laser exfoliation of HOPG, the few-layer graphene is obtained at 473 K under an optimal laser fluence. The formation of few-layer graphene is explained by removal of intact graphite sheets occurred by an optimal laser fluence ablation. The new insights may facilitate the controllable synthesis of large area few-layer graphene.     

纳秒激光单脉冲烧蚀硅表面的超快成像研究

利用ICCD可以在纳秒时间尺度下成像的特点,以飞秒准连续激光产生的超短脉冲光为探测光,对纳秒激光单脉冲烧蚀硅靶表面的演化过程进行动态监测。在能量密度为50J／cm^2时,捕获了纳秒单脉冲激光烧蚀硅靶面过程中等离子体演化的时间分辨图像。图像表明,纳秒激光烧蚀硅靶产生的等离子体开始时密度大,膨胀速度快,当纳秒激光脉冲过后,等离子体不再产生,并且其膨胀速度不再增加,直至完全消失。