N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究

采用射频磁控溅射法在富氧环境下制备ZnO薄膜, 继而结合N离子注入及热退火实现薄膜的N掺杂及p 型转变, 借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性. 结果表明, 在 600 ℃温度下退火120 min可获得性能较优的p-ZnO: N薄膜, 其空穴浓度约为2.527×10¹⁷ cm^-3. N离子注入ZnO引入了三个附加拉曼振动模, 分别位于274.2, 506.7和640.4 cm^-1. 结合电学及拉曼光谱的分析发现, 退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.     

氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响

采用低压化学气相沉积(LPCVD)在玻璃衬底上制备了B掺杂ZnO(BZO)薄膜,研究了氢气气氛退火对BZO薄膜光学性能和电学性能的影响。结果表明:在氢气气氛下退火后,BZO薄膜的物相结构和透光率基本无变化,但BZO薄膜的导电能力却明显提高。Hall测试结果表明:在氢气下退火时载流子浓度基本保持不变,但迁移率却明显提高。实验结果可为进一步提高BZO薄膜的光学电学综合性能提供借鉴。     

MgxZn1-xO/Au/MgxZn1-xO夹层透明导电薄膜的制备及光电性质研究

采用操作简单的溶胶-凝胶法和射频磁控溅射法在石英衬底上分别制备了MgxZn1-xO薄膜和MgxZn1-xO/Au/MgxZn1-xO夹层结构的透明导电薄膜并对样品进行退火处理。利用紫外-可见分光光度计、X射线衍射仪、光致发光、霍尔效应测试对在不同退火温度下薄膜的晶体结构、光学和电学性质进行表征分析,并研究退火温度对其影响。测试结果表明:所制备的薄膜样品均具有良好的c轴(c-axis)取向并呈现出六角纤锌矿结构。Mg组分的增加使得ZnO基薄膜的光学带隙逐渐增大,PL发光谱和吸收光谱的谱线出现了明显的蓝移现象,但薄膜的电学特性有所降低。而在MgxZn1-xO/Au/MgxZn1-xO夹层结构的薄膜样品中,Au夹层的存在使薄膜的光学性质变差,在紫外区域透光率约为60%。但薄膜的电学性质得到明显改善,相比MgxZn1-xO薄膜,其电阻率和迁移率显著提高。此外通过高温退火处理可以有效提高所制备薄膜的晶体质量,进一步提高样品电学特性,其中经过500℃退火后的薄膜迁移率达到了40.9cm2·Vs-1,电阻率为0.005 7Ω·cm。但随着退火温度的进一步升高,薄膜晶体尺寸从25.1nm增大到32.4nm,从而降低了该薄膜的迁移率。因此该夹层结构的MgxZn1-xO/Au/MgxZn1-xO薄膜对于促进ZnO基透明导电薄膜在深紫外光学器件中的应用有重要作用。     

氮等离子体辅助脉冲激光沉积生长p型ZnO:N薄膜的光学和电学性质

通过氮气等离子体辅助脉冲激光沉积(PLD)技术制备了氮掺杂氧化锌(ZnO:N)薄膜.经过低温快速热退火(RTA)处理后,ZnO:N薄膜呈现p型导电特性.利用X射线光电子能谱(XPS)、光致发光(PL)和霍尔测量对ZnO:N薄膜中N的化学状态及其光学和电学性质进行了系列的研究.结果表明:所制得的p型ZnO:N薄膜为高度补...     

溶胶-凝胶法制备Li-N双掺p型ZnO薄膜的结构、光学和电学性能

采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N（摩尔比）为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是：电阻率为0.34 Ω·cm,霍尔迁移率为16.43 cm²/V·s,载流子浓度为2.79×10¹⁹ cm^{-3关键词： Li-N双掺 p型ZnO薄膜 溶胶-凝胶 性能}     

退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响

采用射频磁控溅射法在石英玻璃衬底上制备了ZnO:Mn薄膜, 结合N⁺ 注入获得Mn-N共掺ZnO薄膜, 进而研究了退火温度对其结构及室温铁磁性的影响. 结果表明, 退火后ZnO:(Mn, N) 薄膜中Mn²⁺和N^3-均处于ZnO晶格位, 没有杂质相生成. 退火温度的升高 有助于修复N⁺注入引起的晶格损伤, 同时也会让N逸出薄膜, 导致受主(N_O)浓度降低. 室温铁磁性存在于ZnO:(Mn, N)薄膜中, 其强弱受N_O浓度的影响, 铁磁性起源可采用束缚磁极化子模型进行解释.     

CVD法制备p-ZnO薄膜/n-Si异质结发光二极管及其性能研究

利用简单的化学气相沉积方法, 首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜, 并在此基础上制作了p-ZnO/n-Si异质结发光二极管．对制备的Sb掺杂ZnO薄膜 在800 ℃下进行了热退火处理, 发现退火后样品的晶体质量和表面形貌都得到明显提高, 并且薄膜呈现的电导类型为p型, 载流子浓度为9.56× 10¹⁷ cm^-3. 此外, 该器件还表现出良好的整流特性, 正向开启电压为4.0 V, 反向击穿电压为9.5 V. 在正向45 mA的注入电流条件下, 器件实现了室温下的电致发光. 这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现, 这为ZnO基光电器件的材料制备提供了一种简单可行的方法. 关键词： CVD p-ZnO 异质结 电致发光     

MSM结构ZnO/Cu薄膜的接触特性

利用脉冲激光沉积(PLD)法在Si(111)衬底上分别生长了ZnO薄膜和Cu薄膜, 用Cu薄膜作电极,研究了ZnO薄膜与Cu薄膜的接触特性。分别用X射线衍射仪、扫描电子显微镜和I-V测试的方法对样品的晶体质量、结构和电学性质进行了测试。结果表明:样品中ZnO薄膜和Cu薄膜均具有高度的择优取向;当Cu和 ZnO直接接触时,样品的I-V特性是非线性的;当Cu和 ZnO之间通过ZnO:Cu层间接接触时形成良好的欧姆接触,而且退火后欧姆接触性能明显提高,电阻率降低约2/3。本研究为价格低廉的Cu电极成为ZnO基器件的欧姆电极提供了一定的依据。     

退火温度对硼掺杂纳米金刚石薄膜微结构和p型导电性能的影响

采用热丝化学气相沉积法制备硼掺杂纳米金刚石 (BDND) 薄膜, 并对薄膜进行真空退火处理, 系统研究退火温度对BDND薄膜微结构和电学性能的影响. Hall效应测试结果表明掺B浓度为5000 ppm (NHB) 的样品的电阻率较掺B浓度为500 ppm (NLB) 的样品的低, 载流子浓度高, Hall迁移率下降. 1000 ℃退火后, NLB和NHB 样品的迁移率分别为53.3和39.3 cm²·V^-1·s^-1, 薄膜的迁移率较未退火样品提高, 电阻率降低. 高分辨透射电镜、紫外和可见光拉曼光谱测试结果表明, NLB样品的金刚石相含量较NHB样品高, 高的硼掺杂浓度使薄膜中的金刚石晶粒产生较大的晶格畸变. 经1000 ℃退火后, NLB和NHB薄膜中纳米金刚石相含量较未退火时增大, 说明薄膜中部分非晶碳转变为金刚石相, 为晶界上B扩散到纳米金刚石晶粒中提供了机会, 使得纳米金刚石晶粒中B浓度提高, 增强纳米金刚石晶粒的导电能力, 提高薄膜电学性能. 1000 ℃退火能够恢复纳米金刚石晶粒的晶格完整性, 减小由掺杂引起的内应力, 从而提高薄膜的电学性能. 可见光Raman光谱测试结果表明, 1000℃退火后, Raman谱图中反式聚乙炔 (TPA) 的1140 cm^-1峰消失, 此时薄膜电学性能较好, 说明TPA减少有利于提高薄膜的电学性能. 退火后金刚石相含量的增大、金刚石晶粒的完整性提高及TPA含量的大量减少有利于提高薄膜的电学性能. 关键词： 硼掺杂纳米金刚石薄膜 退火 微结构 电学性能     

退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响(英文)

采用脉冲激光沉积技术在Si/蓝宝石衬底上制备了ZnO薄膜,结合快速退火设备研究了不同退火温度(500~900℃)及退火气氛(N2,O2)对薄膜的结构及其发光性能的影响。并优化条件得到具有最小半峰全宽及最大晶粒尺寸的薄膜。X射线衍射(XRD)结果表明:氮气氛下退火的ZnO薄膜最佳退火温度为900℃;氧气氛下退火的ZnO薄膜最佳退火温度为800℃。红外(IR)光谱中,退火后Zn-O特征振动峰红移,说明在退火过程中,原子重新排布后占据较低能量位置;同样的退火温度下,氮气氛下退火的薄膜质量更优。同步辐射光电子能谱(synchrotron-based XPS)分别表征了未退火及N2,O2下900℃退火的ZnO薄膜,分峰拟合结果表明氧气氛下退火产生更多的氧空位。结构表征结合光致发光(PL)谱表明绿光的发光峰与氧空位有关。     

p型ZnO薄膜的制备及特性

采用射频磁控溅射在Si片上制备ZnO薄膜，通过离子注入对样品进行N掺杂，在不同温度下进行退火并实现了p型转变.用扫描电子显微镜、X射线衍射和Hall测量对薄膜进行了表征，结果表明薄膜具有良好的表面形貌和高度c轴择优取向，退火后p型ZnO薄膜的最高载流子浓度和最低电阻率分别为1.68×10¹⁶cm^-3和41.5Ω·cm.讨论并分析了退火温度和时间对ZnO薄膜p型转变的影响.     

Li掺杂ZnO纳米棒的导电和发光特性(英文)

利用气相输运方法,在(111)面硅衬底上制备了名义上原子数分数为2%的Li掺杂的ZnO纳米棒(样品A)。作为比较,我们在相同的生长条件下制备了没有任何掺杂的ZnO纳米棒(样品B)。XRD分析测试表明:样品A和样品B中的ZnO纳米棒具有纤锌矿六边形结构,没有其他氧化物,例如Li2O。Hall效应测量表明:样品A导电类型为p型,空穴载流子浓度为6.72×1016cm-3,空穴载流子迁移率为2.46 cm2.V-1.s-1。样品B为n型,电子载流子浓度为7.16×1018cm-3,电子载流子迁移率为4.73 cm2.V-1.s-1。低温光致发光光谱测试表明,样品A和样品B发光峰明显的区别是位于3.351 eV(样品B)和3.364 eV(样品A)处。根据文献报道,在没有掺杂的ZnO中,3.364 eV发光峰源于施主束缚激子发光。通过变温光致发光光谱的测试,证明了在样品A中,位于3.351 eV的发光峰源于受主束缚激子发光,其光学受主能级位于价带顶142meV处。     

铟磷共掺杂p型氧化锌薄膜形成机理和性质

利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO ∶ In,P),所用靶材为掺杂五氧化二磷(P₂O₅)和氧化铟(In₂O₃)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O₂的混合气体。原生ZnO薄膜是绝缘的, 600 ℃退火5 min后导电类型为n型,而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm, 1.6×10¹⁷ cm^-3 和3.29 cm²·V^-1·s^-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且P_Zn与2个锌空位(V_Zn)形成P_Zn-2V_Zn复合受主,薄膜表现为p型。     

MOCVD法生长Ga、P掺杂的ZnO薄膜

采用金属有机化学气相沉积法在蓝宝石衬底上制备Ga、P掺杂的ZnO薄膜,分别采用X射线衍射、扫描电子显微镜、霍尔效应测试、光致发光谱对样品进行表征。通过Ga、P掺杂分别得到n、p型ZnO薄膜,n型ZnO薄膜的载流子浓度可以达到1×1019cm-3,p型ZnO薄膜的载流子浓度达到1.66×1016cm-3。所制备的ZnO薄膜具有c轴择优生长取向,并且p型ZnO薄膜具有较好的光致发光特性。     

Characterization and aging effect study of nitrogen-doped ZnO nanofilm

The influence of sputtering and annealing conditions and aging effect on properties of sputtered ZnO:N thin films were investigated. Achieved results confirmed a planar growth of nitrogen-doped ZnO film with a high uniform and smooth surface morphology. Incorporation of nitrogen in the ZnO films made new Raman shifts. X-ray diffraction spectra showed only the ZnO (0 0 2) diffraction peak, which was slightly shifted toward lower angels, compared to pure ZnO, which is the result of incorporating nitrogen in the ZnO films. The amount of this shift was proportional to N concentration. In addition, annealed samples showed better crystallinity with lower shift due to dramatically reduction of N atoms during the annealing. The Hall effect measurements exhibited p-type behaviour on annealed ZnO:N thin films while the un-annealed samples showed n-type conductivity. Aging effect studies demonstrated that the N content of thin films decreased dramatically as time passed. The reduction of N concentration in annealed samples was lower than un-annealed ones after 6 months.     

Effect of substrates on the properties of p-type ZnO films

Influence of substrates on the properties of p-type ZnO films, which were fabricated by N–Al co-doping technique, was studied. Hall measurement results indicated that ZnO films deposited on common glass substrate were p-type conductivity when Zn:N:Al atomic ratio amounts to 1:3:0.1. However, ZnO films deposited on corning 7059 glass substrate showed n-type conductivity. Secondary ion mass spectroscopy demonstrated that Na content incorporated into ZnO films deposited on common glass substrate was more evident than that of corning 7059 glass. In addition, Hall mobility and conductivity of p-type ZnO thin films deposited on silicon substrate were improved largely.     

在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜

采用直流反应磁控溅射方法,通过改变衬底温度并优化生长参数,在玻璃衬底上生长了In-N共掺p型ZnO薄膜。X射线衍射(XRD)测试表明,所得薄膜结晶性能良好,且具有很好的c轴择优取向。Hall测试的结果所得p型ZnO薄膜最低电阻率为35.6Ω·cm,霍尔迁移率为0.111cm2·V-1·s-1,空穴浓度为1.57×1018cm-3。X光电子能谱(XPS)测试表明,铟元素已有效地掺入了ZnO薄膜中,且铟元素有效地促进了氮元素的掺入。紫外可见(UV)透射谱测试表明,在可见光范围内所有薄膜透光率均可达90%。     

Effect of NH4OH concentration on p-type doped ZnO film by solution based process

Highly oriented and large scale p-type ZnO:Al:N films have been successfully synthesized by a simple, solution-based approach. In this approach, p-type doping of zinc oxide was achieved using combination of aqueous ammonia, zinc acetate and aluminium chloride. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), photoluminescence and Hall measurements indicate that the structure of the ZnO:Al:N films were highly influenced by aqueous ammonia concentration. Excessive aqueous ammonia results in randomly oriented film with excessive precipitation.     

Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method

N-doped ZnO films were produced using N₂ as N source by metal-organic chemical vapor deposition (MOCVD) system which has been improved with radio-frequency (RF)-assisted equipments. The data of secondary ion mass spectroscopy (SIMS) indicate that the concentration of N in N-doped ZnO films is around 5 × 10²⁰ cm⁻³, implying that sufficient incorporation of N into ZnO can be obtained by RF-assisted equipment. On this basis, the structural, optical and electrical properties of Al-N codoped ZnO films were studied. Then, the effect of RF power on crystal quality, surface morphologies, optical properties was analyzed using X-ray diffraction, atomic force microscopy and photo-luminescence methods. The results illustrate that the RF plasma is the key factor for the improvement of crystal quality. Then the observation of A⁰X recombination associated with N_O acceptor in low-temperature PL spectrum proved that some N atoms have occupied the positions of O atoms in ZnO films. Hall measurements shown that p-type ZnO film deposited on quartz glasses was obtained when RF power was 150 W for the Al-N codoped ZnO films, while the resistivity of N-doped ZnO films was rather high. Compared with the Al-doped ZnO film, the obviously increased resistivity of codoped films indicates that the formation of N_O acceptors compensate some donors in ZnO films effectively.