Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.     

脱氧La0.5Ca0.5MnO3样品的铁磁-反铁磁转变和电阻率变化

研究了氧空位对La_0.5Ca_0.5MnO₃ （LCMO）多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相. 关键词： 0.5Ca_0.5MnO₃')" href="#">La_0.5Ca_0.5MnO₃ 反铁磁相变 铁磁相变 脱氧     

Simultaneous measurement of thermal and dielectric properties in a conduction calorimeter: Application to the lock-in transition in Rb2ZnCl4 single crystal

A device for simultaneous measurement of thermal properties (specific heat, latent heat and related properties) and electric properties (such as permittivity, dielectric spectroscopy) based on conduction calorimetry is explained. The device is used to study the commensurate-incommensurate (lock-in) phase transition in Rb₂ZnCl₄ single crystal. This transition is found to be first-order. Thermal and dielectric anomalies are discussed.     

等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

使用等离子体活化硒源对电沉积制备的Cu-In-Ga金属预制层进行了硒化处理时, 发现等离子体功率对Cu(In_1-xGa_x)Se₂(CIGS)晶粒的生长有重要影响, 当等离子体功率为75 W时, 制备出单一Cu(In_0.7Ga_0.3)Se₂相的CIGS薄膜. 通过对不同衬底温度的等离子体活化硒源硒化的CIGS 薄膜进行了研究与分析, 并与普通硒化后的薄膜进行对比, 发现高活性硒在低温下会促进Ga-Se二元相的生成, 从而有利于Cu(In_0.7Ga_0.3)Se₂单相的生长. 对等离子体硒化后的CIGS薄膜进行了电池制备, 发现单相CIGS薄膜没有显著提高电池性能. 通过优化工艺, 所制备的CIGS电池效率达到了9.4%. 关键词： 0.7Ga_0.3)Se₂')" href="#">Cu(In_0.7Ga_0.3)Se₂ 电沉积 Cu-In-Ga金属预制层 等离子体活化硒     

Thermoelectric power factor of RuSr2GdCu2O8

The influence of thermal treatment between 1273 and 1333?K in an oxygen atmosphere on the perovskite system RuSr₂GdCu₂O₈ was studied by X-ray diffraction (XRD), scanning electron microscopy, electrical resistivity and Seebeck coefficient measurements. The XRD patterns revealed that the phase purity depends on the sintering process. The samples were found to exhibit very small crystallite sizes in the nanometer range. The electrical resistivity was found to be strongly correlated with the heat treatment. The temperature dependence of electrical resistivity for one sample revealed semiconducting behavior, whereas the others exhibit metallic behavior. All the investigated samples exhibit a positive thermoelectric power, indicating the predominance of positive charge carriers. It was found that the power factor reaches a maximum value of 0.4?×?10^?4?W?m^?1?K^?2 at 300?K.     

Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability

The influence of Si in Sb₂Te₃ on structure and phase stability was studied by experiments and ab initio calculations. With the increase of Si content in Sb₂Te₃ samples, the crystallization temperature increases and the crystalline grain size decreases. The incorporation of Si atoms into Sb₂Te₃ lattice is energetically unfavorable and hence Si atoms most probably accumulated in the boundaries of Sb₂Te₃ grains.     

The structural and magnetic properties of Ni2Mn1−xBxGa Heusler alloys

The influence of the substitution of manganese by boron on the crystal structure and magnetic properties of Ni₂Mn_1−xB_xGa Heusler alloys with 0?x?0.5 has been investigated using X-ray diffraction, thermal expansion, resistivity, and magnetization measurements. The samples with concentrations x<0.25 were found to be of single phase and belonged to the cubic L2₁ crystal structure at room temperature. Crystal cell parameters of the alloys decreased from 5.830 to 5.825 Å with increasing boron concentration (x) from 0 to 0.25. The alloys were ferromagnetically ordered at 5 K and the saturation magnetization decreased with increasing boron concentration. The ferromagnetic ordering and structural transition temperatures for 0?x?0.3 have been observed and the phase (x−T) diagram of the Ni₂Mn_1−xB_xGa system was constructed. The phase (x−T) diagram indicates that the ground state of Ni₂Mn_1−xB_xGa alloys belongs to ferromagnetic martensitic, premartensitic, and austenitic phases in x?0.12, 0.12<x?0.18, and 0.18<x?0.3, respectively. The relative influence of cell parameters and electron concentrations on the phase diagram is discussed.     

Vortex states in mesoscopic single crystals Bi2Sr2CaCu2O8+δ in high magnetic fields

The c-axis resistivity measurements were performed in the vicinity of the ab-plane in order to investigate the interaction between Josephson vortices and pancake vortices in Bi₂Sr₂CaCu₂O_8+δ mesoscopic single crystals. It was found that the angular dependence of the c-axis resistivity drastically changes in high magnetic field regime. The vortex lock-in transition becomes considerably broad in high magnetic fields, while the angular dependence of resistance exhibits the sharp lock-in features in low magnetic field region.     

In situ Raman spectroscopy of phase transformation in CrOx-Y2O3 system at elevated temperatures

A CrO_x-Y₂O₃ sample was prepared by a deposition-precipitation method and phase transformation of the sample under N₂ and air atmospheres was characterized by in situ Raman spectroscopy and X-ray diffraction (XRD) techniques. It was found that when the CrO_x-Y₂O₃ sample was heated, CrO₃ transformed to YCrO₄ and then to YCrO₃ and Cr₂O₃. Also, the transformation started from the surface region of the sample and then extended to the bulk, due to the fact that the phase transformation was detected by Raman spectroscopy at lower temperature compared to that by XRD. In addition, both atmosphere and temperature had influence on the phase transformation in the surface region, while the phase transformation in the bulk was merely dependent on the temperature. It was also found that low oxidation state Cr(III) species on the surface could be re-oxidized to high oxidation state Cr(V) or Cr(VI) species when the thermal treated sample was exposed to ambient air.     

Nickel-induced magnetic behaviour of nano-structured α-Fe2O3, synthesised by facile wet chemical route

We report the synthesis of pristine and nickel containing iron oxide (α-Fe₂O₃) nanocrystallites by facile environmentally benign wet chemical process. The magnetic behaviour of the samples has been found to change progressively with nickel content. The Mössbauer spectra revealed the precipitation of secondary phase of nickel ferrite (NiFe₂O₄) at ～2?wt% nickel contents. The transmission electron micrographs together with asymmetric magnetic hysteresis loop have confirmed the formation of core–shell structure. The Morin temperature of nanostructured α-Fe₂O₃ as estimated by superconducting quantum interference device has been found to be 257, 245, 247 and 242?K at nickel content of 0, 1, 2 and 4?wt%, respectively. The similar trends of increase/decrease in Morin temperature have been noticed by Mössbauer analysis. Furthermore, below Morin temperature, the temperature range of coexisted antiferromagnetic and ferromagnetic states has been found to increase with increase in nickel content.     

Temperature dependence of the indirect band gap, steepness parameter and related optical constants of [Kx(NH4)1−x]2ZnCl4 mixed crystals

Optical transmittance measurements near the absorption edge of [K_x(NH₄)_1−x]₂ZnCl₄ mixed crystals, where x=0.00, 0.232, 0.522, 0.644, 0.859 and 1.00, are reported over 276–350 K range. Analysis reveals that the type of transition is the indirect allowed one. The absorption edge shifted towards lower energy with increasing temperature. It is shown that [K_x(NH₄)_1−x]₂ZnCl₄ mixed crystals with x0.644 reveal a phase transition at 319 K, this phase disappeared at high concentrations of K⁺ ions. The steepness parameter is given, its value is used to estimate the temperature dependence of the indirect energy gap. In the region of the absorption edge, the absorption coefficient obeys Urbach's rule. Urbach parameters are investigated as a function of temperature.     

Influence of calcining temperature on photoluminescence and thermal quenching in europium-doped Y2SiO5 using the MOD process

The crystalline Eu_0.25Y_1.75SiO₅ (EYSO) fine powders were prepared using metallorganic decomposition process, in which the pure X₁- and X₂-Y₂SiO₅ phases were obtained by calcining at temperatures from 850°C to 1600°C. The influence of calcining temperature on photoluminescence (PL) and thermal quenching were systematically investigated from room temperature to 573 K for the first time. As a consequence, the X₂-EYSO was higher in light emission intensities than the X₁-EYSO, but the X₁-EYSO possessed better temperature dependence of PL. The phase structure had a significant effect on the light emission intensity and energy as well as its temperature characteristics in the EYSO.     

The studies of high-temperature and short-time annealing,phase transition process,and magnetic property for LaFe11.7Si1.3 compound

The high-temperature phase transition is analyzed according to the DSC of as-cast LaFe_11.7 Si_1.3 compound and the X-ray patterns of LaFe_11.7Si_1.3 compounds prepared by high-temperature and short-time annealing. Large amount of 1:13 phase begins to appear in LaFe_11.7Si_1.3 compound annealed near the melting point of LaFeSi phase (about 1422?K). When the annealing temperature is close to the temperature of peritectic reaction (about 1497?K), the speed of 1:13 phase formation is the fastest. The phase relation and microstructure of the LaFe_11.7Si_1.3 compounds annealed at 1523?K (5?h), 1373?K (2?h)?+?1523?K (5?h), and 1523?K (7?h) +1373?K (2?h) show that longer time annealing near peritectic reaction is helpful to decrease the impurity phases. For studying the influence of different high-temperature and short-time annealing on magnetic property, the Curie temperature, thermal, and magnetic hystereses, and the magnetocaloric effect of LaFe_11.7Si_1.3 compound annealed at three different temperatures are also investigated. Three compounds all keep the first order of magnetic transition behavior. The maximal magnetic entropy change ΔS_M (T, H) of the samples is 12.9, 16.04, and 23.8?J?kg^?1?K^?1 under a magnetic field of 0–2?T, respectively.     

ELECTROCHEMICAL OXIDATION OF La2CuO4 SINGLE CRYSTALS

Bulk superconducting La₂CuO_4+δ single crystals are obtained by using electrochemical intercalation technique from the as-grown insulating samples. Oxidation is carried out by constant current I=10μA at temperature T=70℃ and room temperature, respectively. Structure and magnetic properties are studied by low-temperature X-ray diffraction and susceptibility measurements. A superconducting phase with T_c of 19K and δ-0.12 can be attributed to the formation of oxygen clusters. Room temperature oxidation is inhomogeneous: two superconducting phases with T_c1 of 24K and T_c2 of 8K and an antiferromagnetic phase are coexisting in the crystal. It is found that the appearance of T_c in this system has the "step" tendency.     

NTCR behavior of Sm-substituted barium zirconium titanate nanocrystalline solid solution

Ceramic solid solution of nanocrystalline barium zirconium titanate in the form of Ba(Zr_0.52Ti_0.48)O₃ substituted by samarium (Sm³⁺) was prepared using the conventional solid state reaction method. The phase assemblage analyzed by the X-ray diffraction technique was fitted for cubic-crystal-symmetry. The change in the grain size depicted the influence of Sm³⁺ ions on the microstructure. The electrical behavior was studied in the temperature range from 323 to 773 K. The sintered samples exhibited a negative temperature coefficient of resistance (NTCR) and superior semiconducting behavior above 513 K. Addition of Sm³⁺ increased the room temperature resistivity of Ba(Zr_0.52Ti_0.48)O₃ solid solution. The results obtained from the thermoelectric power measurement confirm electrons as the majority charge carriers.     

Influence of boron on the giant magnetocaloric effect of La(Fe0.9Si0.1)13

The influences of boron addition on the phase formation, Curie temperature and magnetic entropy change of the NaZn₁₃-type La(Fe_0.9Si_0.1)₁₃ compound have been investigated. Eight boron containing La(Fe_0.9Si_0.1)₁₃B_x samples were prepared with x=0, 0.03, 0.06, 0.1, 0.2, 0.3, 0.5 and 0.6, respectively. Experimental results show that a small amount of B addition in La(Fe_0.9Si_0.1)₁₃ forms the solid solution NaZn₁₃-type structure phase by substituting B for Si or doping B into interstitial position of the lattice, preserves its giant magnetocaloric effects due to their first-order structural/magnetic transition, as well as increase its Curie temperature T_c slightly. The maximum magnetic entropy changes in the magnetic field change of 0–1.6 T are around 20 J kg^–1 K^–1 for the samples with Boron addition less than 0.3, while improving the Curie temperatures by 2 K.     

Influence of deposition temperature on the structural and morphological properties of Be3N2 thin films grown by reactive laser ablation

Be₃N₂ thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 °C, 400 °C, 600 °C and 700 °C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 °C and 700 °C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be₃N₂ stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 °C or 700 °C. However, the samples grown at RT and annealed at 600 °C or 700 °C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 °C, and the sample annealed in situ at 600 °C were amorphous; while the αBe₃N₂ phase was presented on the samples with a substrate temperature of 600 °C, 700 °C and that deposited with the substrate at RT and annealed in situ at 700 °C.     

Ti1－xCrxO2±δ体系的相关系、晶体结构和磁性能研究

采用溶胶凝胶法制备了Ti_1-xCr_xO_2±δ体系系列样品.利用扫描电子显微镜(SEM)，X射线光电子能谱(XPS)，粉末X射线衍射分析(XRD)方法研究了Ti_1-xCr_xO_2±δ系列样品的颗粒尺寸、形貌、组分化学态、相关系和固溶区范围；并利用超导量子干涉磁强计对样品的磁性能进行了研究.采用Rietveld结构精修的方法研究了Cr的不同掺杂量对TiO₂晶体结构的影响，研究表明，1000℃烧结的样品的固溶区范围是x=0—0.03，为金红石单相；随着Cr掺杂量的增加，金红石相晶胞参数规律性地减小；当x>0.03，为金红石相和CrO₂相两相共存.综合XRD和磁性测量结果，500℃烧结的样品的固溶区范围是x=0—0.02，为锐钛矿单相；随着Cr掺杂量的增加，锐钛矿相晶胞参数规律性地减小；当x≥0.04，为锐钛矿相和绿铬矿相(Cr₂O₃)两相共存.XPS实验结果表明，500℃和1000℃退火的样品中Cr都是以Cr⁺³和Cr⁺⁶两种化学态存在，1000℃烧结的样品中可能有更多的Cr³⁺转化为Cr⁶⁺.根据M-H和M-T曲线的测试结果发现，本文500℃烧结的Ti_1-xCr_xO_2±δ体系样品当x=0—0.02时，为室温铁磁性.当x≥0.04时，由铁磁相和顺磁相所组成，在低温下有较强的铁磁性；室温下主要是顺磁相，铁磁相只占据很小的体积分数. 关键词： 1-xCr_xO_2±δ体系')" href="#">Ti_1-xCr_xO_2±δ体系 相关系 固溶区 磁性能     

On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

The photoluminescence (PL) at ∼2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H₂O₂:HF at 50:1 volume ratio, and the other in a solution of HF:H₃PO₄:H₂O₂ at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO_x (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ∼2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeO_xs.     

Proton conductivity and ferroelectric phase transition in hydrogen-bonded ferroelectric NH4IO3

We report on the ac dielectric permittivity (ε) and the electric conductivity (σ_ω), as function of the temperature 300?K?T4IO₃. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm2₁ b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ_{( ω )}?=?A(T)ω ^{s (T)}). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.