Influence of the PLD parameters on the crystalline phases and fluorescence of Eu:Y2O3 planar waveguides

Eu³⁺-doped yttrium oxide (Eu:Y₂O₃) films were grown on fused-silica substrates by laser ablation. Depending on oxygen pressure, substrate temperature and laser energy density, the crystalline structure of the films, determined by X-ray diffraction and Raman spectroscopy, changes from monoclinic to cubic. The crystalline structure of the films is confirmed by Eu³⁺ fluorescence spectra and refractive indices, measured by m-line spectroscopy. The cubic crystalline films show low-loss waveguiding properties. PACS 81.15.Fg; 78.55.Hx; 78.20.Ci     

Ca_(1-x)Al_2Si_2O_8∶Eu_x表面结构与荧光强度相互关系的研究

采用固相法分别在1 150,1 250,1 350,1 450℃下制备了Ca_(1-x)Al_2Si_2O_8∶Eu_x(x=0,0.01,0.05,0.15)系列微晶材料。通过X射线衍射仪(XRD)、拉曼光谱仪(Raman)、光致发光光谱仪(PL)和X射线荧光光谱仪(XRF)研究了CaAl_2Si_2O_8表面结构与荧光强度之间的相互关系。XRD和Raman结果表明:在制备CaAl_2Si_2O_8材料的过程中,随着温度不断升高,原材料逐渐结晶形成结构较为完整的CaAl_2Si_2O_8相;并且从拉曼光谱可以清晰看出,当Eu掺杂量相同时,随着烧结温度的升高,Si—O非晶相逐渐减少,硅氧四面体逐步形成,其振动峰位置逐渐向低波数移动,但当温度过高时硅氧四面体破坏形成宽化的的非晶峰;Eu的掺杂阻碍了Al取代Si位置的过程,因此在1 620波数处振动峰先增强后减弱。这种材料表面结构的变化与Eu的掺杂密切相关,影响着材料表面Eu原子数量分布。PL和XRF结果表明:相同Eu掺杂量时,温度越高越有利于Eu原子扩散到样品表面,从而使样品的荧光强度更强。因此样品的荧光强度和样品单位表面积Eu原子数量存在正比关系。     

共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3 )到Eu~(2 )的转变

采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3 向Eu2 的转变 .SiO2 (Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论     

Substrate dependent properties of electrodeposited EuTe thin films

In electrodeposition, substrate besides providing mechanical support to the electrodeposit, affects significantly the structural and morphological properties of a film. Electrodeposition and characterization of EuTe thin films onto different substrates such as stainless steel (SS), titanium (Ti), copper (Cu), fluorine-doped tin oxide (F:SnO₂) covered glasses have been described. The deposition potentials have been estimated from the polarization curves. The reaction mechanism is proposed for the formation of EuTe electrodeposits. Preparative parameters such as deposition potential, current density, and deposition time are studied. The films have been characterized by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and energy dispersive analysis by X-rays (EDAX) techniques. The electrodeposited EuTe films are polycrystalline on all the substrates with same cubic crystal structure. The SEM studies reveal that the surface morphology is different for the substrates studied. However, no cracks have been observed in the SEM micrographs. The AFM images show large spherical grains supporting the polycrystalline nature of the samples. The EDAX analysis shows that the EuTe films are nearly stoichiometric, slightly rich in tellurium.     

Raman characterization of the structural evolution in amorphous and partially nanocrystalline hydrogenated silicon thin films prepared by PECVD

Hydrogenated silicon (Si:H) thin films were obtained by plasma‐enhanced chemical vapor deposition (PECVD). Raman spectroscopy was used to investigate the structural evolution in phosphor‐doped n‐type amorphous hydrogenated silicon thin films, which were prepared under different substrate temperatures and gas pressures. Meanwhile, the effect of nitrogen doping on the structure of P‐doped thin films was also investigated by Raman spectroscopy. Moreover, the transition from the amorphous state to the nanocrystalline state of undoped Si:H films deposited through low argon dilution was studied by Raman spectroscopy, X‐ray diffraction, and transmission electron microscopy. The results show that Raman spectroscopy can sensitively detect the structural evolution in hydrogenated silicon thin films deposited under different conditions in a PECVD system. Copyright © 2010 John Wiley & Sons, Ltd.     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.     

Bi3.15Eu0.85Ti3O12铁电薄膜的结构与光学性能

采用化学溶液沉积法在石英衬底上制备了Bi_3.15Eu_0.85Ti₃O₁₂ (BEuT) 铁电薄膜,研究了 BEuT薄膜的结构和光学性能。XRD结果表明,不同温度退火的BEuT皆形成铋层状钙钛矿型结构,其晶粒尺寸随着退火温度的升高而增大,与SEM观察结果一致。对BEuT薄膜的拉曼光谱研究表明,Eu³⁺主要取代钙钛矿层中的Bi³⁺位。光学透过率曲线显示,在大于500 nm的波段,各BEuT薄膜的透过率均比较高,其禁带宽度约为 3.69 eV。BEuT薄膜的发光随着退火温度的升高而增强,这可归因于其结晶状况的改善。     

Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.     

CaAl_2Si_2O_8∶Eu,Ce,Tb单基三元掺杂荧光材料的制备及其光谱学特征研究

采用高温固相法制备了CaAl_2Si_2O_8∶Eu,Ce,Tb单基三元掺杂的荧光材料。使用X射线衍射仪(XRD)、拉曼光谱仪(Raman)和荧光分光光度计(PL)等测试手段对该荧光材料进行表征。采用XRD表征了样品的物相组成,测试结果表明稀土离子Eu~(2+)置换Ca~(2+)并没有引起CaAl_2Si_2O_8基质晶格结构的变化。拉曼光谱分析证实了样品中硅氧四面体和铝氧四面体的存在,表明了Eu~(2+)替代Ca~(2+)的数量与晶体形态畸变程度有关,Eu~(2+)进入基质晶格的数量影响着硅(铝)氧四面体的数量。PL测试结果表明样品在325nm光激发下,其发射峰主要表现为426nm(蓝光区)的强宽带发射峰和541nm(绿光区)的弱发射峰,其中426nm处的宽带发射峰可通过高斯拟合成三个位于393,419和474nm的拟合峰;对比分析荧光性能以及同等合成条件下样品荧光强度的不同,确定了该荧光材料在三掺Eu∶Ce∶Tb的摩尔比为1∶1∶1.5时所发射荧光最强。CIE色度图坐标显示三种掺杂比例下制备的荧光材料均发射蓝色荧光,光显色性好,色温低,是一种适合作为紫外-近紫外激发的LED用蓝色荧光材料。     

Properties of PbTe/EuTe short period superlattices and their application to laser diodes

Short period superlattices (SPSLs) consisting of PbTe (E_g=0.3eV) and EuTe (E_g-2.0eV) were prepared on KCl (100) substrates by alternate growth of the PbTe (100 Å) and Eu (less than a few atomic layers) using a hot-wall technique. The structural properties were studied through x-ray diffraction and electron-probe micro analysis. The band gap of the SPSL, depending on average Eu (EuTe) composition, was determined by optical transmission measurement. It was found that the band gap of the SPSL of a small EuTe composition increases very sensitively with the EuTe composition, while that of a large EuTe composition depends only on the period length, resulting from the quantum size effect due to large band gap of EuTe (barrier). Results of magneto resistance measurements of the SPSL are also presented. A multiple quantum-well (MQW) laser was fabricated using the SPSL for barrier layers in the MQW active region and cladding layers. The laser operated up to 160 K (pulsed).     

Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.     

共溅射和离子注入制备的SiO2(Eu)薄膜中Eu3+到Eu2+的转变

采用共溅射方法和Eu离子注入热生长的SiO₂方法得到SiO₂(Eu)薄膜,Eu离子的浓度为4%和0.5%.对样品X射线吸收近边结构(XANES)的研究和分析表明,在高温氮气中发生了Eu³⁺向Eu²⁺的转变.SiO₂(Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论 关键词： 2(Eu)薄膜')" href="#">SiO₂(Eu)薄膜 XANES     

不同温度下制备的CdTe薄膜对太阳电池光电性能的影响

在不同温度下用近空间升华法（CSS）制备了CdTe多晶薄膜,结合I-V,C-V特性及深能级瞬态谱研究了不同温度制备的CdTe薄膜对CdS/CdTe太阳电池性能的影响.结果表明,制备温度对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小.在此研究基础上制备出了面积为300 mm×400 mm 关键词： 制备温度 CdTe薄膜 深能级瞬态谱（DLTS） CdS/CdTe太阳电池     

Spectroscopic and X-ray diffraction study of high Tc epitaxial YBCO thin films obtained by pulsed laser deposition

We report spectroscopic characterization of epitaxial YBCO thin films grown on LaAlO₃ by pulsed laser deposition. Raman spectroscopy and spectroscopic ellipsometry were used for film characterization and the results were correlated with X-ray diffraction measurements. The mentioned techniques allowed us to analyze crystallographic, micro-structural, and morphological properties of YBCO thin films. We also demonstrated that relatively low resolution Raman spectroscopy and spectroscopic ellipsometry are reliable techniques for a rapid and non-destructive characterization of epitaxial YBCO thin films.     

光谱分析气体状态对近空间升华沉积CdTe多晶薄膜的影响

在CdTe多晶薄膜太阳电池制备中用近空间升华法生长了CdTe多晶薄膜,沉积工作气体的状态决定了薄膜的结构、性质。文章首先分析了近空间沉积的物理机制,测量了近空间沉积装置内的温度分布,使用氩氧混合气体为工作气体,其中重点讨论了该气体状态(包括气氛和气压)与薄膜的初期成核的关系,即择优取向程度和光能隙与气氛和气压的关系。结果表明,(1)不同气氛下沉积的CdTe薄膜均为立方相结构。随氧浓度的增加,σ增加,氧浓度为6%时,σ最大,之后随氧浓度增加,σ降低,在12%达到最小,然后随氧浓度的增加而增加, 在氧浓度为9%时沉积的结晶更完整。CdTe薄膜的光能隙为1.50～1.51 eV;(2)在氩氧气氛下氧浓度为9%,不同气压下制备的样品,均有立方相CdTe, 此外, 还有CdS和SnO₂:F衍射峰。CdTe晶粒随气压增加有减小趋势,随气压的增加,透过率呈下降趋势,相应的CdTe吸收边向短波方向移动;(3)在氩氧气氛下氧浓度为9%,采用衬底温度550 ℃,源温度620 ℃,沉积时间4 min时制备的CdTe多晶薄膜获得了转换效率优良的结构为SnO₂:F/CdS/CdTe/Au的集成电池。     

沉积时间对球状微米金刚石聚晶结构的生长及其场发射特性影响

利用微波等离子体化学气相沉积法,在覆盖金属钛层的陶瓷衬底上,通过改变沉积时间制备出不同结构的类球状微米金刚石聚晶碳膜.通过扫描电子显微镜、喇曼光谱、X射线衍射谱对碳膜进行了分析测试,并研究了不同沉积时间下沉积的类球状微米金刚石聚晶薄膜的场致电子发射特性,结果显示:不同的沉积时间所制备的碳膜形貌有很大变化,场致电子发射的...     

Structural and Magnetic properties of Cr-diffused CdTe nanocrystalline thin films deposited by electron beam evaporation

Cr-diffused cadmium telluride (CdTe) thin films with different Cr content were prepared using electron beam evaporation method at a substrate temperature of 373 K followed by annealing at 573 K. The structures, composition, chemical and magnetic properties of the prepared films were studied using appropriate techniques. The X-ray diffraction spectra showed a predominant (1 1 1) reflection corresponding to the zinc blende structure of CdTe. Increase of lattice parameter with increase in Cr content has been observed. The cross-sectional HRSEM images displayed a columnar grain growth in the films. EDAX data exposed the presence of Cr, Cd and Te with near stoichiometry. The Raman spectra revealed emission peaks corresponding to A1, TO and LO modes of CdTe showing gradual shift in peak position and decreased intensity confirming the incorporation of Cr into CdTe host lattice. M–H plots displayed a clear well-defined room temperature ferromagnetic hysteresis loop with increase in Cr content.     

Dependence of the microstructural properties on the substrate temperature in strained CdTe (1 0 0)/GaAs (1 0 0) heterostructures

CdTe thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy at various temperatures. The bright-field transmission electron microscopy (TEM) images and the high-resolution TEM (HRTEM) images showed that the crystallinity of CdTe epilayers grown on GaAs substrates was improved by increasing the substrate temperature. The result of selected-area electron diffraction pattern (SADP) showed that the orientation of the grown CdTe thin films was the (1 0 0) orientation. The lattice constant the strain, and the stress of the CdTe thin film grown on the GaAs substrate were determined from the SADP result. Based on the SADP and HRTEM results, a possible atomic arrangement for the CdTe/GaAs heterostructure is presented.     

Preparation,characterization, and conductivity of YLnTiZrO7 (Ln = La,Nd, Sm,and Eu)

The pyrochlore oxide of composition YLnTiZrO₇ (Ln?=?La, Nd, Sm, and Eu) was prepared by sol–gel method. All the samples were characterized by powder X-ray diffraction (XRD), Raman, X-ray photoelectron spectroscopy (XPS), diffused reflectance spectroscopy, and impedance spectroscopy. The powder XRD and Raman studies reveal that these samples were crystallized in cubic lattice with pyrochlore structure. The Rietveld analysis of the samples was carried out to obtain the unit cell parameters and reliability factors. The broad Raman bands observed for all the samples are due to cation/anion disorder in the lattice and nanosize. The XPS analysis of the samples shows the characteristic peaks belonging to Y³⁺, Ln³⁺ (Ln?=?La, Nd, Sm, and Eu), Ti⁴⁺, and Zr⁴⁺. Electrical conductivity of YLaTiZrO₇ (YLTZ) and YEuTiZrO₇ (YETZ) samples was calculated from the impedance as a function of frequency and temperature. These samples have shown conductivity of the order of 10^?5 scm^?1 at 500 °C.     

纳米晶Y_2O_3:Eu~(3+)的反常拉曼散射(英文)

作者用燃烧法制备了8nm-50nm的系列纳米晶Y2O3:Eu3+,利用XRD谱确定了纳米晶的晶体结构及晶粒大小。利用两套由不同波长的激光所激发的拉曼光谱,指认了纳米晶Y2O3:Eu3+的拉曼振动模,研究其拉曼光谱。与传统的拉曼光谱学相比较,光谱呈现出明显的反常,其一,是斯托克斯与相对应的反斯托克斯谱峰波数不相等;其二,随晶粒的减小,拉曼谱有明显的变化,包括谱峰的微移、半高宽的增加,以及谱峰强度比的强烈变化;其三,随着激发波长的变化,光谱也呈现出峰位移动的明显变化。这些反常的散射光谱的变化源于纳米结构的本征缺陷。