|
|||||
|
|
Spectroscopic and X-ray diffraction study of high Tc epitaxial YBCO thin films obtained by pulsed laser deposition |
|
| Authors: | M Branescu A Vailionis M Anastasescu |
| Institution: | a National Institute of Materials Physics, P.O. Box MG-7, Bucharest 077125, Romania b Stanford University, Stanford, CA 94305-4045, USA c Institute of Physical Chemistry, Spl. Independentei 202, Bucharest 060021, Romania |
| Abstract: | We report spectroscopic characterization of epitaxial YBCO thin films grown on LaAlO3 by pulsed laser deposition. Raman spectroscopy and spectroscopic ellipsometry were used for film characterization and the results were correlated with X-ray diffraction measurements. The mentioned techniques allowed us to analyze crystallographic, micro-structural, and morphological properties of YBCO thin films. We also demonstrated that relatively low resolution Raman spectroscopy and spectroscopic ellipsometry are reliable techniques for a rapid and non-destructive characterization of epitaxial YBCO thin films. |
| Keywords: | YBCO films Low resolution Raman spectroscopy Ellipsometry X-ray diffraction |
| 本文献已被 ScienceDirect 等数据库收录！ | |