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| 共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3 )到Eu~(2 )的转变 | |
| 引用本文： | 刘丰珍,朱美芳,刘涛,李秉程.共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3 )到Eu~(2 )的转变[J].物理学报,2001,50(3). |
| 作者姓名： | 刘丰珍 朱美芳 刘涛 李秉程 |
| 作者单位： | 1. 中国科学技术大学研究生院物理系, 2. 中国科学院高能物理研究所 3. 中国科学院半导体研究所, |
| 摘 要： | 采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3 向Eu2 的转变 .SiO2 (Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论 |
| 关 键 词： | SiO_2(Eu)薄膜 XANES |
THE TRANSITION FROM Eu~(3 )TO Eu~(2 ) IN SiO 2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO\|SPUTTERING |
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| LIU Feng-zhen,ZHU Mei-fang,LIU TAO,LI Bing-cheng.THE TRANSITION FROM Eu~(3 )TO Eu~(2 ) IN SiO 2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO\|SPUTTERING[J].Acta Physica Sinica,2001,50(3). | |
| Authors: | LIU Feng-zhen ZHU Mei-fang LIU TAO LI Bing-cheng |
| Abstract: | Eu ions doped SiO2 thin films,SiO2 (Eu),were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films.The Eu-L3-edge X-ray absorption near edge structure (XANES) spectra of SiO2 (Eu) films show a doublet absorption peak structure with energy difference of 7 eV,which indicates the conversion of Eu3 + to Eu2+ at high annealing temperature in N2.The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 ℃ confirms the above argument. |
| Keywords: | SiO_2(Eu) films XANES |
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