Ⅰ类和Ⅱ类准周期半导体超晶格的电子子带和波函数

本文将包迹函数近似推广用于计算有理数近似下,垂直于超晶格轴的波矢K_⊥不等于零时,准周期半导体超晶格(QSS)的电子子带和波函数,对K_⊥=0的情形,分别计算了Ⅰ类的GaAs/Al_xGa_1-xAs和Ⅱ类的InAs/GaSb QSS的电子子带和波函数,直至代序数m=9和6。对于价带对导带影响强的InAs/GaSb QSS,分别计算了m=5和6时电子子带随K_⊥的变化关系。并提出了利用本文结果计算Ⅰ类的GaAs/Al_xGa_1-xAs QSS带间集体激发的具体方法。     

InxGa1－xAs缓冲层上InyGa1－yAs/(Al)Ga

本文中,发现在In_xGa_1-xAs缓冲层上非故意掺杂的In_yGa_1-yAs/(Al)GaAs超晶格样品中存在着两个互相反向的自建电场区,一个位于样品表面,另一个位于In_xGa_1-xAs缓冲层和超晶格界面。据此,合理地解释了样品的光伏测试结果,并对此类样品的MOCVD生长工艺给予指导。     

LP-MOCVD生长InGaAs/InP应变量子阱的研究

本文研究了LP-MOCVD对不同x值的In_1-xGa_xAs/InP生长条件,并且生长了压缩应变为0.5%三个不同阱宽的InGaAs/InP量子阱结构,利用77KPL光谱分析了能级同阱宽的关系,实现最窄阱宽为4.4nm,最小全半高峰宽为17.0mev.     

Schrdinger方程的一般解与超晶格多量子阱的电子跃迁

假设超晶格量子阱是一个形状任意的周期势阱,电子在超晶格中的运动问题可视为周期场中的运动问题.在量子力学的框架内,从Schr dinger方程和它的一般解出发,利用Bloch理论和传输矩阵方法导出了系统的色散方程;在抛物线近似下,讨论了超晶格量子阱的电子跃迁.结果表明,辐射能量位于红外、远红外或太赫兹波段.     

AlxGa1-xAs/AlyGa1-yAs微腔中的激子吸收增强效应

文章采用Al_xGa_1-xAs/Al_yGa_1-yAs微腔结构,研究了微腔中激子的吸收行为,在室温下观察到了激子吸收的增强效应,激子的峰值吸收强度是自由空间中激子吸收强度的2,6倍;我们从激子与光波场相互作用和腔中模函数的分布建立了计算.激子先吸收的模型,文中给出的微腔结构的数值计算表明激子的吸收增强与实验结果相一致;数值计算表明,微腔中激子吸收的强弱不仅与上、下两腔镜的反射率和腔长有关,而且还取决于量子阱在腔中的位置.     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

正切平方势单量子阱的本征值和本征函数

鉴于“方形”势阱描述量子阱中的电子运动行为过于简单、过于理想,引入了正切平方势来代替,使结果得到了改善。在量子力学框架内,利用正切平方势把电子的Schrdinger方程化为超几何方程,利用系统参数和超几何函数严格地求解了电子的本征值和本征函数,并以Ga_1-xAl_xAs-GaAs-Ga_1-xAl_xAs量子阱为例计算了电子的能级和能级之间的跃迁。结果表明,电子在量子阱中的能量是量子化的,而相邻能级之间的跃迁给出与实验进一步符合的结果。     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律，并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外，用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算，并对计算结果做了比较，发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.     

GaAlAs低温液相外延研究

本文概述了GaAlAs低温液相外延技术在制作超薄外延层,包括量子阶材料中的工作;报道了在700℃和600℃下用液相外延技术生长的GaAlAs层厚度与生长时间的关系,以及在600℃下Ga_1-xAl_xAs外延层中工值与液相中Al含量的关系的实验结果;并且用扫描电镜测得在600℃下10s时间生长的Ga_0.9Al_0.1As层厚为30nm.     

静压下Zn1-xCdxSe/ZnSe窄量子阱的激子和光跃迁

利用波恩公式近似建立了应变与介电常量的定量关系考虑应变对介电常量、有效质量、晶格常量(体积)等诸多物理量的影响,用变分法计算了静压下Zn_1-xCd_xSe/ZnSe窄量子阱中激子结合能和光跃迁能量随压力的变化理论计算结果与其他作者的实验和理论结果进行了比较和讨论.     

Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga<Subscript>1−x</Subscript>Al<Subscript>x</Subscript>As semiconductor superlattice

The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga_1?xAl_xAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.     

Electronic properties of multi-quantum dot structures in Cd 1-xZn xS alloy semiconductors

In this paper, we present a theoretical study of the quantized electronic states in Cd_1-xZn_xS quantum dots. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schr?dinger equation. Electrons and holes are assumed to be confined in dots having a flattened cylindrical geometry with a finite barrier height at the boundary. Optical absorption measurements are used to fit the bandgap edge of the Cd_1-xZn_xS nanocrystals. An analysis of the electron band parameters has been made as a function of Zn composition. Two main features were revealed: (i) a multiplicity in Cd_1-xZn_xS quantum dots with different crystalline sizes has been found to fit accurately experimental data in the composition range 0 ≤x ≤0.2; (ii) the fit did not, however, show a multiplicity for x higher than 0.4. On the other hand, we have calculated the energy level structure of coupled Cd_1-xZn_xS semiconductor quantum dots using the tight-binding approximation. As is found the Zn composition x = 0.4 is expected to be the most favorable to give rise a superlattice behavior for the Cd_1-xZn_xS quantum dots studied.     

InP基InGaAlAs/InGaAsSb应变量子阱激光器的子带跃迁计算

采用有效质量模型下的4×4 Luttinger-Kohn哈密顿量矩阵对In0.53Ga0.39Al0.08As/InxGa1-xAs0.9Sb0.1量子阱结构的能带进行了计算。求得了C1-HH1跃迁波长随In组分及阱宽的变化关系,并采用力学平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明,在结构设计和材料生长中采用合适的材料组分和阱宽,在InP基InGaAlAs/InGaAsSb应变量子阱激光器中能够实现1.6～2.5 μm近中红外波段的激射波长。     

反比相关的双曲余弦平方势与电子的面沟道辐射

带电粒子在晶体沟道中的运动行为决定于粒子-晶体相互作用势.常用的粒子晶体相互作用势有Lindhard势、Moliere和正弦平方势.当超相对论电子沿着晶体的低晶面指数方向入射时,电子和晶体之间的相互作用势可用反比相关的双曲余弦平方势描写.在量子力学框架内,利用这一相互作用势成功地将系统的Schrodinger方程化为超几何方程,从而简化了系统本征值和本征态问题的计算和讨论.考虑到质量的相对论效应和频率的Doppler效应,导出了实验室坐标系中电子的能级分布和辐射谱分布.并以电子的Si(110)面沟道辐射为例,选定一组与入射粒子有关的参数和一组与晶体有关的参数,计算了能量为E=0.5GeV的电子在低位能级之间的跃迁,导出了电子面沟道辐射能量ΔE=49.1MeV,得到了与实验符合的结果.     

Polaronic effects on laser dressed donor impurities in a quantum well

The effect of laser field on the binding energy in a GaAs/Ga1_1−xAl_xAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree–Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor–metal transition.     

GaAs/AlGaAs超晶格的光致发光

在室温下测量了GaAs/A l0.3Ga0.7As超晶格的光致发光,发现在波长λ=761 nm处存在一较强的发光光峰,此发光峰目前尚未见报道。经理论分析表明,此峰是量子阱中的第一激发态电子与受主空穴复合发光。实验还观测到在λ=786 nm处,λ=798 nm处和λ=824 nm处分别存在一发光峰,分析表明λ=786 nm处的发光峰为量子阱阱中费米能级附近的电子与轻空穴复合发光;λ=798 nm处的发光峰为量子阱内的基态电子到轻空穴的复合发光;λ=824 nm处的发光峰为阱中激子复合复合发光。理论计算与实验结果符合的很好。     

Zn1—xMnx／ZnSe应变超晶格分子束外延生长及光学特性研究

用分子束外延方法在ＧａＡｓ（１００）衬底上成功生长了高质量的Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ（ｘ＝０．１６），超晶格结构，用Ｘ射线衍射和低温光致发光（ＰＬ）对其结构，应变分布以及光学性能进行了研究，结果表明，２Ｋ温度下，Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格的光致发光中主发光峰对应于ＺｎＳｅ阱中基态电子和基态轻空穴之间的自由激子跃迁，而且其峰位相对于ＺｎＳｅ薄膜材料的自由激子峰有明显移动。其中，当超晶     

Linear and nonlinear intersubband optical absorption in symmetric double semi-parabolic quantum wells

The linear and the nonlinear intersubband optical absorption in the symmetric double semi-parabolic quantum wells are investigated for typical GaAs/AlxGa1−xAs. Energy eigenvalues and eigenfunctions of an electron confined in finite potential double quantum wells are calculated by numerical methods from Schrödinger equation. Optical properties are obtained using the compact density matrix approach. In this work, the effects of the barrier width, the well width and the incident optical intensity on the optical properties of the symmetric double semi-parabolic quantum wells are investigated. Our results show that not only optical incident intensity but also structure parameters such as the barrier and the well width really affect the optical characteristics of these structures.