Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.1FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO) heterostructures are fabricated on LaAlO3(100) substrates by pulsed laser deposition. Giant remnant polarization value(～ 85 μC/cm2) and large saturated magnetization value(～ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectric properties in the BBFO/LSMO heterostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Magnetic field control of ferroelectric polarization and magnetization of LiCu_2O_2 compound

A spin model of LiCu2O2 compound with ground state of ellipsoidal helical structure is adopted. Taking into account the interchain coupling and exchange anisotropy, we investigate the magnetoelectric properties in a rotating magnetic field and perform the Monte Carlo simulation on a two-dimensional lattice. A prominent anisotropic response is observed in both the magnetization curve and the polarization curve, qualitatively coinciding with the behaviors that are detected in the experiment. In addition, the influences of the magnetic field with various magnitudes on polarization are also explored and analyzed in detail. As the magnetic field increases, a much smoother polarization of angle dependence is exhibited,indicating the strong correlation between the magnetic and ferroelectric orders.     

Theoretical study of mutual control mechanism between magnetization and polarization in multiferroic materials

The mutual control mechanism between magnetization and polarization in multiferroic materials is studied. The system contains a ferromagnetic sublattice and a ferroelectric sublattice. To describe the magneto–electric coupling, we propose a linear coupling Hamiltonian between ferromagnetism and ferroelectricity without microscopic derivation. This coupling enables one to retrieve the hysteresis loops measured experimentally. The thermodynamic properties of the system are calculated, such as the temperature dependences of the magnetization, polarization, internal energy and free energy.The ferromagnetic and ferroelectric hysteresis loops driven by either a magnetic or an electric field are calculated, and the magnetic spin and pseudo-spin are always flipped synchronously under the external magnetic and electric field. Our theoretical results are in agreement with the experiments.     

Soft X-Ray Magneto-optical Faraday Effect around Ni M2,3 Edges

We present magneto-optical （MO） Faraday spectra measured around the M2,3 edges （60-70eV） of Ni films at the Beijing Synchrotron Radiation Facility （BSI~F）. A polarization analysis of the final state of the transmitted radiation from the Ni film is employed to determine the Faraday rotation at the edges. The MO effect becomes resonantly enhanced at the M2,3 edges, and accordingly large values for the rotation angle β of 1.85 ± 0.19° for this ferromagnetic Ni film with thickness of 31 nm are measured. Without the magnetic field, the azimuthal angles do not shift; with parallel and antiparallel magnetic field the rotation angles shift in the opposite way and they are symmetrical. The uncertainty of Faraday rotation angles mainly comes from the data fitting and the state change of the beamline when the angles are measured.     

Multiferroicity in B-site ordered double perovskite Y2MnCrO6

Double perovskite manganite Y2MnCrO6 ceramic Novel multiferroic properties are displayed with respect is synthesized and its multiferroic properties are investigated. to other multiferroics, such as high ferroelectric phase transi- tion temperature, and the coexistence of ferrimagnetism and ferroelectricity. Moreover, the ferroelectric polarization of Y2MnCrO6 below the magnetic phase temperature can be effectively tuned by an external magnetic field, showing a re- markable magnetoelectric effect. These results open an effective avenue to explore magnetic multiferroics with spontaneous magnetization and ferroelectricity, as well as a high ferroelectric transition temperature.     

Physical properties of FePt nanocomposite doped with Ag atoms:First-principles study

L10FePt nanocomposite with high magnetocrystalline anisotropy energy has been extensively investigated in the fields of ultra-high density magnetic recording media. However, the order–disorder transition temperature of the nanocomposite is higher than 600℃, which is a disadvantage for the use of the material due to the sustained growth of FePt grain under the temperature. To address the problem, addition of Ag atoms has been proposed, but the magnetic properties of the doped system are still unclear so far. Here in this paper, we use first-principles method to study the lattice parameters,formation energy, electronic structure, atomic magnetic moment and order–disorder transition temperature of L10FePt with Ag atom doping. The results show that the formation energy of a Ag atom substituting for a Pt site is 1.309 eV, which is lower than that of substituting for an Fe site 1.346 eV. The formation energy of substituting for the two nearest Pt sites is2.560 eV lower than that of substituting for the further sites 2.621 eV, which indicates that Ag dopants tend to segregate L10FePt. The special quasirandom structures(SQSs) for the pure FePt and the FePt doped with two Ag atoms at the stable Pt sites show that the order–disorder transition temperatures are 1377℃ and 600℃, respectively, suggesting that the transition temperature can be reduced with Ag atom, and therefore the FePt grain growth is suppressed. The saturation magnetizations of the pure FePt and the two Ag atoms doped FePt are 1083 emu/cc and 1062 emu/cc, respectively,indicating that the magnetic property of the doped system is almost unchanged.     

Large reversible magnetocaloric effect induced by metamagnetic transition in antiferromagnetic HoNiGa compound

The magnetic properties and magnetocaloric effects(MCE) of Ho Ni Ga compound are investigated systematically.The Ho Ni Ga exhibits a weak antiferromagnetic(AFM) ground state below the Neel temperature TNof 10 K, and the AFM ordering could be converted into ferromagnetic(FM) ordering by external magnetic field. Moreover, the field-induced FM phase exhibits a high saturation magnetic moment and a large change of magnetization around the transition temperature,which then result in a large MCE. A large-?S_M of 22.0 J/kg K and a high RC value of 279 J/kg without magnetic hysteresis are obtained for a magnetic field change of 5 T, which are comparable to or even larger than those of some other magnetic refrigerant materials in the same temperature range. Besides, the μ_0H~(2/3)dependence of |?S_M~(pk)| well follows the linear fitting according to the mean-field approximation, suggesting the nature of second-order FM–PM magnetic transition under high magnetic fields. The large reversible MCE induced by metamagnetic transition suggests that Ho Ni Ga compound could be a promising material for magnetic refrigeration in low temperature range.     

Photovoltaic properties of ferroelectric solar cells based on polycrystalline BiFeO3 films sputtered on indium tin oxide substrates

To study the ferroelectric photovoltaic effect based on polycrystalline films,preparation of high-quality polycrystalline films with low leakage and high remnant polarization is essential.Polycrystalline Bi Fe O3(BFO)thin films with extremely large remnant polarization(2Pr=180μC/cm2)were successfully deposited on glass substrates coated with indium tin oxide using a modified radio frequency magnetron sputtering method.Symmetric and asymmetric cells were constructed to investigate the ferroelectric photovoltaic effect in order to understand the relationship between polarization and photovoltaic response.All examined cells showed polarization-induced photovoltaic effect.Our findings also showed that the ferroelectric photovoltaic effect is highly dependent on the material used for the top electrode and the thickness of the polycrystalline film.     

Magnetic properties of L1_0 FePt thin film influenced by recoverable strains stemmed from the polarization of Pb(Mg_(1/3)Nb_(2/3))O_3–PbTiO_3 substrate

The magnetic properties and magnetization reversible processes of L1_0 FePt(3 nm)/Pb(Mg_(1/3)Nb_(2/3))O_3–PbTiO_3(PMN–PT) heterostructure were investigated by using the phase field model. The simulation results show that the magnetic coercivities and magnetic domains evolution in the L1_0 FePt thin film are significantly influenced by the compressive strains stemming from the polarization of single crystal PMN–PT substrate under an applied electric field. It is found that the magnetic coercivities increase with increasing of the compressive strain. A large compressive strain is beneficial to aligning the magnetic moments along the out-of-plane direction and to the enhancement of perpendicular magnetic anisotropy. The variations of magnetic energy densities show that when compressive strains are different at the magnetization reversible processes, the magnetic anisotropy energies and the magnetic exchange energies firstly increase and then decrease, the negative demagnetization energy peaks appear at coercivities fields, and the magnetoelastic energies are invariable at large external magnetic field with the energy maximum appearing at coercivities fields. The variations of the magnetoelastic energies bring about the perpendicular magnetic anisotropy so that the magnetoelastic energy is lower at the large external magnetic fields, whereas the appearance of magnetoelastic energy peaks is due to the magnetization-altered direction from the normal direction of the plane of the L1_0 FePt thin film at coercivities fields.     

Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study

The electronic structure, magnetic properties, and mechanism of magnetization in two-dimensional(2D) aluminum nitride(AlN) monolayer doped with nonmagnetic elements of group 1A(Li, Na, K) or group 2A(Be, Mg, Ca) were systematically investigated using first-principles studies. Numerical results reveal that the total magnetic moments produced by group 1A and group 2A nonmagnetic doping are 2.0μB and 1.0μB per supercell, respectively. The local magnetic moments of the three N atoms around the doping atom are the primary moment contributors for all these doped AlN monolayers. The p orbital of the dopant atom contributes little to the total magnetic moment, but it influences adjacent atoms significantly, changing their density of states distribution, which results in hybridization among the p orbitals of the three closest N atoms, giving rise to magnetism. Moreover, the doped AlN monolayer, having half-metal characteristics,is a likely candidate for spintronic applications. When two group 1A or group 2A atoms are inserted, their moments are long-range ferromagnetically coupled. Remarkably, the energy of formation shows that, if the monolayer has been grown under N-rich conditions, substitution of a group 2A atom at an Al site is easier than substitution of a group 1A atom.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Room Temperature Ferromagnetism and Optical Tunability in Cu Doped GaN Nanowires

GaN nanowires doped with 2at.% and 6at.% Cu ions are synthesized by chemical vapour deposition method. Structural and compositional analyses demonstrate that the as-grown nanowires are of single crystal wurtzite GaN structure. Magnetic characterizations reveal that the doped GaN nanowires exhibit room temperature ferromagnetism. The measured saturation magnetic moments are 0.37ug and 0.47ug per Cu atom at 300 K for Cu 2 at. % and 6 at. %, respectively. The photoluminescence spectra show that Cu dopant can tune the band gap of the GaN, which leads to a red shift of band-edge emission with increasing dopant concentration.     

Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes

The electronic structure and magnetic properties of the transition-metal(TM) atoms(Sc–Zn, Pt and Au) doped zigzag GaN single-walled nanotubes(NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Codoped GaN NTs induce the largest local moment of 4μB among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it.     

Magnetoelectric effects in multiferroic Y-type hexaferrites Ba(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22)

Y-type hexaferrites with tunable conical magnetic structures are promising single-phase multiferroics that exhibit large magnetoelectric effects. We have investigated the influence of Co substitution on the magnetoelectric properties in the Y-type hexaferrites Ba(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22)(x = 0.0, 0.4, 1.0, 1.6). The spin-induced electric polarization can be reversed by applying a low magnetic field for all the samples. The magnetoelectric phase diagrams of BaBa(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22) are obtained based on the measurements of magnetic field dependence of dielectric constant at selected temperatures. It is found that the substitution of Co ions can preserve the ferroelectric phase up to a higher temperature, and thus is beneficial for achieving single-phase multiferroics at room temperature.     

Sheet Plasma Produced by Hollow Cathode Discharge

A sheet plasma is produced by a hollow cathode discharge under an axial magnetic field. The plasma is about40cm in length, 4cm in width and 1 cm in thickness. The electron density is about 10^8cm^-3. The hollow cathodeis made to be shallow with a large opening, which is different from the ordinary deep hollow cathode. A Langmuirprobe is used to detect the plasma. The electron density and the spatial distribution of the plasma change whenvoltage, pressure and the magnetic field vary. A peak and a data fluctuation at about 200 G-300 G are observedin the variation of electron density (or thickness of the sheet plasma) with the magnetic field. Our work will behelpful in characterizing the sheet plasma and will make the production of dense sheet plasma more controllable.     

Room-Temperature Magnetism Realized by Doping Fe into Ferroelectric LiTaO3

We synthesize LiTal-x FexO3-σ （LTFO） remain single phase up to x = 0.09 ceramics by the conventional solid-state reaction method. The samples The magnetic measurements show that the doping of Fe successfully realizes ferromagnetism of LTFO at room temperature. The dielectric measurements indicate that LTFO is ferroelectric, similarly to LiTaO3 （LTO）, but its ferroelectric Curie temperature seems to decrease with the increasing Fe content. By means of doping Fe ions into LTO, the coexistence of spontaneous electric polarization and spontaneous magnetic moment is realized at room temperature.     

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via S doping in a graphene-based magnetic tunnel junction in detail.It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 5 doping.Also,both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration,which implies a large negative magnetoresistance for this device.The results show that the negative magnetoresistance of over 300% at B=1.0 T is observed by choosing suitable doped parameters,and the temperature plays an important role in the magnetoresistance.Thus it is possible to open a way to effectively manipulate the magnetoresistance devices,and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.     

Anisotropic and mutable magnetization in Kondo lattice CeSb_2

We have systematically studied the behaviors of the resistivity and magnetization of CeSb_2 single crystals as a function of temperature and external field. Four anomalies in the resistivity/magnetization-versus-temperature curves are observed at low magnetic field. They are located at 15.5 K, 11.5 K, 9.5 K, and 6.5 K, corresponding to the paramagnetic–magnetically ordered state(MO), MO-antiferromagnetic(AFM), AFM–AFM, and AFM–ferromagnetic(FM) transitions, respectively.The anomaly at 9.5 K is only visible with H‖[010] by magnetic susceptibility measurements, indicating that the AFM–AFM transition only happens along [010] direction in ab-plane. The four magnetic transitions are strongly suppressed by high external field. Finally, the field-temperature phase diagrams of CeSb_2 with different orientations of the applied field in ab-plane are constructed and indicate the highly anisotropic nature of the magnetization of CeSb_2.     

Generation of Electric Field and Net Charge in Hall Reconnection

Generation of Hall electric field and net charge associated initial conditions of plasma density and magnetic field. with magnetic reconnection is studied under different With inclusion of the Hall effects, decoupling of the electron and ion motions leads to the formation of a narrow layer with strong electric field and large net charge density along the separatrix. The asymmetry of the plasma density or magnetic field or both across the current sheet will largely increase the magnitude of the electric field and net charge. The results indicate that the asymmetry of the magnetic field is more effective in producing larger electric field and charge density. The electric field and net charge are always much larger in the low density or/and high magnetic field side than those in the high density or/and low magnetic field side. Both the electric field and net charge density are linearly dependent on the ratios of the plasma density or the square of the magnetic field across the current sheet. For the case with both initial asymmetries of the magnetic field and density, rather large Hall electric field and charge density are generated.