磁电弹性体中多条位错与Griffith裂纹（英文）

根据本征方程,研究磁电弹性体中若干平行螺型位错与Griffith裂纹的相互作用.结合Muskhelishvili方法和算子理论,得到磁电弹性体中由位错和裂纹所诱导的应力场、电场和磁场的解析解.数值算例表明:在裂纹的端点及位错点上仍然存在应力的奇异性,离位错点越远处广义力越小,结论与已有的结果相符,证明了结论的正确性.当位错点与裂纹端点距离越近时,裂纹与位错间的应力场越小,并逐渐趋近于零.     

磁电弹性体中螺型位错与唇口裂纹的相互作用

研究磁电弹性体中螺型位错与唇口裂纹的相互作用。结合Muskhelishvili方法和干扰技术, 在假定裂纹面具有不可渗透条件下得到磁电弹性体中由位错和唇口裂纹所诱导的应力场、电场和磁场的解析解。应用广义Peach-Koehler公式,得到作用在位错上的影像力。通过数值算例,得到场强度因子的变化规律及影像力和广义力随位错位置的变化规律。     

α-Fe裂纹的分子动力学研究

通过分子动力学方法，模拟了α-Fe裂纹的单轴拉伸实验中的形变过程.研究了不同晶体取向裂纹的形变特点和断裂机理，观察到各种形变现象，如位错形核和发射，位错运动，堆垛层错或孪晶的形成，纳米空洞的形成与连接等.计算结果表明，裂纹扩展是塑性过程和弹性过程相结合的过程，其中塑性过程表现为由裂尖发射的位错导致的原子切变行为，而弹性过程的发生则是由无位错区中的原子断键所导致.同时还研究了α-Fe裂纹的形变特点和断裂机理与温度场和应力场的依赖关系.     

体心立方金属钽Ⅱ型裂纹尖端缺陷萌生的多尺度分析

本文采用多尺度准连续介质法(quasi-continuum method, QC)模拟体心立方(body-centered-cubic, bcc)金属钽(Ta)Ⅱ型裂纹尖端位错的形核与发射过程,获得位错发射位置与应力强度因子关系曲线,分析裂纹尖端缺陷萌生过程,研究全位错分解以及扩展位错形成机理. 位错活动在不同阶段表现出不一致的特征,新位错的发射对于位错运动具有促进作用. 研究表明,裂纹扩展初始阶段首先萌生点缺陷,点缺陷随着加载强度增加会萌生新的点缺陷,点缺陷最终运动到边界,导致Ⅱ型断裂破坏. 在全位错发射之前有不全位错的形核与发射表明全位错的分解分步进行,从势能曲线上来看,也就是两个极小值点的形成机理不同. 关键词： 多尺度 准连续介质法 Ⅱ型裂纹 扩展位错     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸溅金点的存在对应力分布的影响.在此基础上,在应力集中处预置不同长度的初始裂纹用以描述InSb晶片中的位错,以能量释放率为判据,探究InSb芯片碎裂与迸溅金点和位错线长短的关系.结论如下:1)迸溅金点的存在对InSb芯片碎裂的影响是局部的,在迸溅金点与InSb芯片接触区域的两侧会形成两个应力集中点; 2)环绕预置裂纹的能量释放率会随着预置裂纹长度的增加而加速增大,当预置裂纹长度接近InSb芯片上表面时,能量释放率近乎指数增加,并在预置裂纹贯穿InSb芯片时达到最大值; 3)迸溅金点引起的InSb芯片破碎属于Ⅰ型断裂失效模式,在多周期液氮冲击中,位错线在应力集中效应的驱使下逐步扩展,直至贯穿InSb芯片,最终形成宏观碎裂失效现象.     

钾矾晶体中螺位错的双折射端点像

考虑了弹性各向异性和弹光各向异性,得到了含有长程应力场的钾矾KAl(SO_4)_2·12H_2O单晶体中a<111>螺位错的双折射端点像的强度分布,其结果与实验相符。据此,给出了估计晶体中内应力场的主应力大小和方向的方法。 关键词：     

位错规范场对于位错芯区的应用

本文用位错连续分布方法分析了位错所产生的应变和应力场,用位错规范场表出了位错芯区的位错分布,并在一定规范条件下求解了位错规范场。得到了螺位错芯区内、外的应力场。在螺位错芯区外,其应力场与Volterra位错的应力场完全一样,而在芯区内,当ρ趋于零时,螺位错的应力场是有解的。最后计算了螺位错的能量。 关键词：     

晶体缺陷规范场中的刃位错

本文用位错连续分布方法表出了刃位错所产生的应变和应力场,得到了刃位错芯区内、外的应力场,位错芯区的无限小位错分布用缺陷规范场表出,并在一定规范条件下求解了位错规范场,在刃位错芯区外,其应力场与Volterra位错的应力场完全一样,而在芯区内,当r趋于零,刃位错的应力场为有限,消除了应力的奇异性。 关键词：     

铁磁多层膜中的力致磁电阻效应

通过研究外应力场下铁磁多层膜系统中的自旋结构,讨论了系统磁电阻对外应力的依赖关系.结果表明,外应力能够诱发磁电阻效应,且其磁电阻紧密依赖于外应力的大小和方向.一般地对铁磁性层间耦合,其磁电阻与外应力之间的关系紧密地依赖于两铁磁层的磁致伸缩系数以及磁晶各向异性之差异.具体地,大小一定的外应力由磁易轴向磁难轴旋转的过程中,磁电阻先缓慢增大后急剧减小,在磁难轴附近变化较敏锐,并出现峰值.外应力方向一定时,磁电阻随应力的增大先敏锐增强后缓慢减小,且应力方向偏离磁易轴越远,变化趋势越显著.特别地,当外应力完全垂直于磁易轴时,应力大小的变化会引起磁电阻翻倍.而外应力场介于8πM/5≤H_λ≤18πM/5时,磁电阻会随应力的旋转单调上升,并在磁难轴附近急剧增强,产生GMR效应;对反铁磁性层间耦合,其GMR效应对应力大小和方向的响应近似地相反于铁磁性层间耦合情形. 关键词： 铁磁/非磁/铁磁三层膜 自旋结构 磁电阻 应力场     

弹性连续介质中氢致裂纹传播理论

弹性连续介质中的氢原子,在裂纹应力场的诱导下发生聚集,形成氢气团,本文计算了气团分布区平均氢浓度,并将该区看作沿裂纹尖端分布的弹性夹杂,确定了夹杂的本征应变,研究了夹杂的应力场P_ij对裂纹位错密度的影响,求得了裂纹尖端总的应力强度因子,认为氢脆机理是氢气团增大了裂纹尖端应力强度因子,最后还讨论了氢致开裂的物理过程及氢致裂纹扩展速率,所得结果与实验符合很好。 关键词：     

Shielding effect and emission criterion of a screw dislocation near an interfacial blunt crack

Shielding effect and emission criterion of a screw dislocation near an interfacial blunt crack are dealt with in this paper. Utilizing the conformal mapping technique, the closed-form solutions are derived for complex potentials and stress fields due to a screw dislocation located near the interfacial blunt crack. The stress intensity factor on the crack tips and the critical stress intensity factor for dislocation emission are also calculated. The influence of the orientation of the dislocation and the morphology of the blunt crack as well as the material elastic dissimilarity on the shielding effect and the emission criterion is discussed in detail. The results show that positive screw dislocations can reduce the stress intensity factor of the interfacial blunt crack tip (shielding effect). The shielding effect increases with the increase of the shear modulus of the lower half-plane, but it decreases with the increase of the dislocation azimuth angle. The critical loads at infinity for dislocation emission increases with the increase of emission angle and curvature radius of blunt crack tip, and the most probable angle for screw dislocation emission is zero. The present solutions contain previous results as special cases.     

Shielding effect of a nano-circular inclusion acting on semi-infinite wedge cracks

The model of a screw dislocation near a semi-infinite wedge crack tip inside a nano-circular inclusion is proposed to investigate the shielding effect of nano inclusions acting on cracks. Utilizing the complex function method, the closed-form solutions of the stress fields in the matrix and the inclusion region are derived. The stress intensity factor, the image force, as well as the critical loads for dislocation emission are discussed in detail. The results show that the nano inclusion not only enhances the shielding effect exerted by the dislocation, but also provides a shielding effect itself. Moreover, dislocations may be trapped in the nano inclusion even if the matrix is softer than the inclusion. This helps the dislocation shield crack, and reduces the dislocation density within the matrix.     

The interaction between a screw dislocation and an interfacial cruciform crack and collinear linear cracks

The interaction between a screw dislocation and an interfacial cruciform crack and collinear linear cracks under loads at infinity was investigated. General solutions of complex potentials to this problem were derived by using complex potential theory. As illustrative examples, the closed form solution for a screw dislocation interacting with an interfacial cruciform crack and a linear crack is obtained. The stress intensity factor and critical stress intensity factor for dislocation emission are also calculated. The results show that the shielding effect increases with the increase of the shear modulus and the distance between the two cracks, but it decreases with the increase of dislocation azimuth and the distance between the dislocation and the cruciform crack tip. The critical loads at infinity for dislocation emission increase with the increment of the emission angle, the distance the two cracks and the vertical length of the cruciform crack.     

Elastic behaviour of an edge dislocation near a sharp crack emanating from a semi-elliptical blunt crack

The interaction between an edge dislocation and a crack emanating from a semi-elliptic hole is dealt with. Utilizing the complex variable method, closed form solutions are derived for complex potentials and stress fields. The stress intensity factor at the tip of the crack and the image force acting on the edge dislocation are also calculated. The influence of the morphology of the blunt crack and the position of the edge dislocation on the shielding effect to the crack and the image force is examined in detail. The results indicate that the shielding or anti-shielding effect to the stress intensity factor increases acutely when the dislocation approaches the tip of the crack. The effect of the morphology of the blunt crack on the stress intensity factor of the crack and the image force is very significant.     

Screw dislocations interacting with two asymmetrical interfacial cracks emanating from an elliptical hole

The interaction between screw dislocations and two asymmetrical interfacial cracks emanating from an elliptic hole under loads at infinity is studied. The closed-form solution is derived for complex potentials. The stress intensity factor and the critical applied stress for the dislocation emission are also calculated. In the limiting cases, well-known results can be obtained from the present solutions. Moreover, new exact solutions for a screw dislocation interacting with some complicated cracks are derived. The results show that the shielding effect increases with the increase in the length of the other cracks and the minor semi axis, but decreases with the increase of dislocation azimuth. The repulsion acting on the dislocation from the other phase and the other crack extend in the horizontal direction, which makes the dislocation emission at the crack tip take place more easily, but the minor semi axis of the elliptical hole extending in the vertical direction makes it more difficult.     

Crack tip dislocation emission and nanoscale deformation fields in silicon

A micro-crack in silicon was experimentally investigated by using a combination of transmission electron microscopy and geometric phase analysis. The strain fields of the crack tip, with scales of a few tens of nanometers, were mapped. The crack tip dislocation emission and stress relief by dislocation generation around a crack tip can be proved. And, the strain field of an edge dislocation was compared with the Peierls–Nabarro dislocation model at the scale of a dislocation width. We show that the Peierls–Nabarro model is the appropriate theoretical model to describe the deformation fields of the dislocation core.     

Evolution of the concentration of point defects at the tip of a crack

The evolution of the distribution of interstitial impurity atoms in the plastic zone around the tip of a tension crack is analyzed. The transport of point defects is determined by: 1) the hydrostatic component of the elastic stress at the crack tip, created by the superposition of the elastic fields of the crack and dislocations; 2) the elastic field of moving dislocations (“sweeping out” of interstitial impurity atoms); 3) the dislocation-driven transport of point defects present in the dislocation cores. The contributions of each mechanism of transport of point defects to the crack tip are calculated over the entire time from the start of loading of a sample containing a crack until an equilibrium distribution of plastic deformation is established after the cessation of loading. Numerical calculations are carried out for interstitial hydrogen atoms dissolved in an α-Fe crystal. Fiz. Tverd. Tela (St. Petersburg) 39, 1580–1585 (September 1997)     

Solutions to two or four parallel Mode-I permeable cracks in magnetoelectroelastic composite materials

The solutions to two or four parallel Mode-I permeable cracks in magnetoelectroelastic composite materials are derived using the generalized Almansi's theorem under permeable electric and magnetic boundary conditions. The problem can be solved through the Fourier transform with the help of two pairs of dual integral equations, in which unknown variables were jumps of displacements across crack surfaces, not dislocation density functions. To solve the dual integral equations, the jumps of displacements across crack surfaces were directly expanded in a series of Jacobi polynomials to obtain the relations among the electric displacement intensity factors, the magnetic flux intensity factors and the stress intensity factors at the crack tips. The paper presents the interactions of two or four parallel Mode-I cracks in magnetoelectroelastic composite materials and the crack-shielding effect in magnetoelectroelastic composite materials.     

Non-local theory solution of two collinear mode-I permeable cracks in a magnetoelectroelastic composite material plane

The non-local theory solution of two collinear mode-I permeable cracks in a magnetoelectroelastic composite material plane was investigated using the generalized Almansi's theorem and the Schmidt method. The problem was formulated through Fourier transform into two pairs of dual integral equations, in which the unknown variables are the jumps in displacements across the crack surfaces. To solve the dual integral equations, the displacement jumps across the crack surfaces were directly expanded as a series of Jacobi polynomials. Numerical examples were provided to show the effects of crack length, the distance between two collinear cracks and the lattice parameter on the stress field, the electric displacement field and the magnetic flux field near the crack tips. Unlike the classical elasticity solutions, it is found that no stress, electric displacement or magnetic flux singularities are present at the crack tips in a magnetoelectroelastic composite material plane. The non-local elastic solutions yield a finite hoop stress at the crack tip, thus allowing us to use the maximum stress as a fracture criterion.