脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

N2��Ƶ�ŵ��������(e,N2+, N+)��PIC-MCģ��

采用PIC-MC自洽模型,模拟了氮气电容性耦合射频放电的微观等离子体过程及带电粒子(e,N2+,N+)的行为。结果表明,离子(N2+,N+)的运动状态滞后瞬时射频电场的变化;在两极附近,N2+具较高密度,但能量较低,N+具较低的密度但能量较高,两者的密度差6倍左右。两种离子轰击射频电极的能量分布变化规律类似,随放电参数变化,离子(N2+,N+)能量变化显著,其密度变化不明显。模拟的电子能量几率分布与测量结果一致。     

脉冲放电射流辅助射频辉光放电研究

通过实验研究了脉冲放电射流辅助下大气压氦气射频辉光放电的电学和光学特性。采用组合电极结构,在射频放电前段增加脉冲电极,脉冲放电产生的射流以等离子体子弹形式注入射频放电区域,主要研究脉冲射流辅助射频放电的电流电压曲线、最低放电维持电压、放电强度和空间结构时空分布。研究结果表明:等离子体子弹经过射频放电区域后,由于等离子体子弹引入的活性粒子,会使射频放电区域等离子体强度增强;而射频放电最低维持电压也从0.93 kV降低至0.43 kV。     

He-O2高气压下电容耦合辉光放电数值分析

采用一维的等离子体流体力学模型研究了氦气-氧气高气压下电容耦合放电过程。分别给出了间隙为1.6,2.4和3.2 mm时外加电压的有效值与放电电流有效值特征曲线,并与已有的实验数据作对比,结果表明计算得到的电压-电流特征曲线与实验数据符合得很好。研究发现:氦气-氧气高气压下电容耦合放电过程中荷质比较大的离子在鞘层中的分布随着外电场的变化而变化,而荷质比较小的粒子在整个放电区域基本不随外电场变化而变化;同时杂质形成正负离子在主等离子体区域两端出现了峰值。     

甚高频激发的容性耦合Ar+O_2等离子体电负特性研究

利用探针辅助的脉冲激光诱导负离子剥离诊断技术对掺入5%O_2的容性耦合Ar等离子体电负特性进行了诊断研究.首先详细解析了脉冲激光剥离后探针的电信号,分析了探针偏压在低于或高于空间电位下的探针收集信号特征;根据探针偏压与探针收集信号之间的依赖关系,用来描述Ar+O_2等离子体电负特性的等离子体电负度被定义为脉冲激光剥离出的电子电流与偏压高于空间电位的探针收集到的背景电子电流的饱和比值,并对等离子体电负度随放电气压、射频功率以及轴向位置的变化进行了诊断测量.实验结果表明等离子体的电负度随着射频功率的增加而减小、随着放电气压的上升而变大;由于非对称电极的分布特性,在轴向方向上靠近功率电极时等离子体电负度有升高的趋势,这种趋势可能与鞘层边界附近二次电子的动力学行为以及负离子的产生与消失过程有关.     

不同电流下气体开关电极烧蚀特性实验研究

在不同短路电流条件下,进行了不锈钢(1Cr18Ni9Ti)电极气体火花开关连续多次自击穿放电实验,通过测量电极质量损失、表面粗糙度和自击穿电压的变化,研究电极烧蚀特性及其对自击穿性能的影响。实验结果表明:随着放电电流峰值和周期增大,电极材料烧损速率与电容电荷量呈线性增加,而电极表面烧蚀粗糙度与电流峰值呈线性增大,自击穿电压变化达到峰值和稳定区的放电次数减少,但稳定阶段的自击穿电压值及其相对标准偏差同时减少,五种放电电流情况下,自击穿电压概率密度分布均遵循高斯函数。     

柱面天线射频感性耦合等离子体放电模式特性的实验研究

利用Z-scan、电流、电压探头,通过测量等离子体吸收功率、天线电流、电压、等离子体直流悬浮电位等多种参数,研究了匹配网络、天线耦合强度、导电地面积、气压等多种因素对E,H放电模式特性及模式转化行为的影响.基于Γ型阻抗匹配网络中串联电容对射频电源输出功率的影响,提出了E—H放电模式转化的正负反馈区概念.研究发现：在相同的其他放电条件下,处于正反馈区时等离子体放电易于产生跳变型模式转化,而且模式跳变的临界天线电流、回滞宽度、跳变临界功率、跳变功率差等参数均随阻抗匹配网络参数产生明显变化;在负反馈区内,模式转化过程趋于连续.由于阻抗匹配网络的影响,E—H模式的跳变电流并不是总大于H—E模式的跳变电流.在不同导电地面积、阻抗匹配网络、气压下,模式转化过程中等离子体直流悬浮电位的变化呈现多样性. 关键词： 射频等离子体 感性耦合 容性耦合 模式转化     

N_2-H_2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

H_2-N_2混合气体电容性耦合射频放电在有机低介电系数材料刻蚀中具潜在研究意义.采用paxticle-incell/Monte Carlo模型模拟了双频(13.56 MHz/27.12 MHz)电压源分别接在结构对称的两个电极上的H_2-N_2容性耦合等离子体特征,研究了其电非对称效应.模拟结果表明,通过调节两谐波间的相位角θ,可以改变其电场、等离子体密度、离子流密度的轴向分布及离子轰击电极的能量分布.当相位角θ为0°时,低频电极(晶片)附近主要离子(H_3~+)的密度最小,离子(H_3~+,H_2~+,H~+)轰击低频电极的流密度及平均能量最高;当θ从0°变化90°时,低频电极的自偏压从-103V到106V近似线性增加,轰击电极的离子流密度变化约±18%,H~+离子轰击低频电极的最大能量约减小2.5倍,轰击电极的平均能量约变化2倍,表明氢离子能量和离子流几乎能独立控制.     

同轴介质阻挡放电发生器介质层等效电容和负载特性研究

大气压介质阻挡放电(DBD)可以在常压下产生非平衡等离子体,已经成为热点研究领域.通过脉冲或交变电源激发放电,研究电源输出特性、电源与放电发生器负载间的匹配和外界条件对放电的影响对于理解放电现象和提高放电效率具有重要意义.本文采用Lissajous图形法,分别研究了驱动电压、气流速率等因素影响同轴DBD发生器介质层等效电容及负载幅频特性的规律.结果表明,气流速率和驱动电压等外界条件影响DBD发生器的负载特性:介质层等效电容随气流速率增大而减小,随驱动电压增大而增大;幅频特性曲线均表现出RLC回路谐振现象,谐振频率随气流速率增大而增大,随驱动电压增大而减小.通过对比发现,介质层等效电容随频率的变化曲线与幅频特性曲线具有一致的特征,介质层等效电容是影响电路谐振频率动态变化的主要因素.提出了一种有关介质层等效电容的形成机制.     

An experimental study of the plasma parameters of a hybrid low-pressure RF discharge

This paper presents an experimental study of the plasma parameters of a hybrid radio-frequency (RF) discharge, which is a new modification of an RF discharge. The discharge is maintained by both vortex and potential RF electrical fields. To generate a hybrid RF discharge, an RF power input unit is used in the form of a parallel-connected inductor and capacitor coatings. A blocking capacitor is included in the capacitive channel of the discharge. The paper presents data from the study of the influence of power coupled to the plasma, argon pressure, and blocking capacitance on the plasma parameters, i.e., the electron energy distribution, temperature, and density and plasma potential. The role of the capacitive channel in the variations in properties and the characteristics of the discharge are considered.     

The Spatial and Temporal Evolution of the Glow in an RF Discharge

The temporal and spatial evolution of the glow in a 1.0- and 2.6-MHz radio-frequency (RF) excited discharge has been photographed with a high-speed framing camera. Evidence is presented showing electrons with a ballistic behavior in the body of the glow and a time delay between the maximum optical intensity of the glow and the maximum RF voltage. The effect of the dc self-bias on the glow is also shown. The implications of these observations on the dynamics of the ion motion in the plasma are discussed.     

The influence of external parameters on the peculiarities of a hybrid low-pressure radio-frequency discharge

This paper deals with the experimental study of the patterns of the RF power input into the plasma of a hybrid RF discharge that was sustained by an RF power unit, which consisted of a spiral antenna connected in parallel with capacitor electrodes. At low values of RF generator power, RF power has been shown to be derived in the hybrid discharge through the capacitive channel; the role of the inductive channel becomes more significant at higher RF generator power as the power of the RF generator increases. It was demonstrated that at a low power of the RF generator the RF power occurs in the hybrid discharge essentially through the capacitive channel and then increases as the power of the RF generator increases. The larger the contribution of the inductive channel is, the smaller the value of the dividing capacity included in the capacitive discharge chain is.     

可调谐射频磁探针研究

提出了一种利用可调谐变压器提高磁探针灵敏度的方法。可调谐射频变压器采用在原线圈并联可变电容及在副线圈串联可变电容的结构,用平面分立式法拉第屏蔽抑制变压器原、副线圈间寄生的容性耦合。测量结果表明：在采用中心抽头变压器及法拉第屏蔽的情况下,磁探针的容性耦合大幅度降低;当调节并联或串联电容时,磁探针输出电压均出现共振现象;调节并联电容得到的共振输出电压高于调节串联电容时的对应值;在典型条件下,共振输出电压幅值比无可变电容磁探针提高了约一个量级。建立了探针电路模型,计算结果与测量结果符合较好。     

Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD

The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_x) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiN_x,the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiNx films by means of tuning N_2/SiH_4 ratio and radio frequency(RF) power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR) and micro Raman spectroscopy were used to characterize the SiN_x films by measuring Si-H and N-H bonds' intensities.It was found that the more Si-H bonds lead to the higher dielectric strength.     

双通道电光调Q射频激励波导CO2激光器研究

报道了双通道可调谐电光调Q射频激励波导CO2激光器,其中一通道是光栅选支电调Q的脉冲激光输出,调Q脉冲重复频率1Hz-10kHz可调,,脉冲峰值功率为150W,脉冲宽度为180ns,另一通道是光栅选支连续激光输出,可用压电陶瓷调节激光频率,同时分析了激光外差频率调谐范围,实验上获得最大脉冲激光外差频率调谐范围为150MHz。     

Experimental study of patterns of energy input into hybrid low pressure discharge for varying RF generator power and argon pressure

Patterns of energy release in the plasma of a new modification of RF discharge, viz., hybrid RF discharge, which are maintained by vortex and potential RF electric fields, are experimentally studied. RF power input unit in the form of inductor and capacitor plates connected in parallel are used for initiating this discharge. This paper presents data obtained during the investigation of the influence of power supplied to the plasma and argon pressure on the equivalent resistance of the hybrid discharge, which is the measure of plasma capability of absorbing RF power. The role of the capacitive channel in the balance of RF power supplied to the discharge is considered.     

Deposition and characterization of organosilicon thin films from TEOS+O2 gas mixture

The composition of films deposited in RF glow discharge tubular reactor fed with tetraethoxysilane (TEOS) and oxygen mixtures at various temperatures, gas flows, gas pressures and various self-bias voltages were investigated by means of different diagnostic methods. The thickness, stress in thin films, hardness, composition and optical properties of deposited thin films were determined.The work was supported by the Grant Agency of the Czech Republic, grant No. 202/93/2118.     

Elektrische Charakterisierung von Hochfrequenz-Niederdruck-Gasentladungen

In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities.     

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

An Al Ga N/Ga N high electron mobility transistor(HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency(RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.