飞秒纳秒脉冲激光微构造和掺杂单晶硅（英文）

在SF6气氛下,分别利用钛宝石飞秒脉冲激光与掺钕钇铝石榴石纳秒脉冲激光对单晶硅表面进行了微构造和重掺杂,以用于光伏材料。对制备的单晶硅表面微结构的形貌、结晶性和硫元素杂质含量与分布进行了研究。实验结果表明纳秒脉冲激光制备的单晶硅表面微结构的薄层电阻较小,缺陷密度较低(结晶性高),硫元素杂质含量较高且在表面分布的范围较广,深度较大(约1μm)。此外,材料的可见-近红外波段吸收率可接近80%。基于纳秒脉冲激光微构造的单晶硅的优异性能,在样品表面制备了有效光照面积达8cm2的太阳能电池。其中,最佳太阳能电池的串联电阻、开路电压、短路电流密度分别为0.5Ω,503mV,35mA/cm2,转换效率约12%。上述太阳能电池性能还可通过优化制备工艺进一步提高。     

飞秒纳秒脉冲激光微构造和掺杂单晶硅

在SF6气氛下，分别利用钛宝石飞秒脉冲激光与掺钕钇铝石榴石纳秒脉冲激光对单晶硅表面进行了微构造和重掺杂，以用于光伏材料。对制备的单晶硅表面微结构的形貌、结晶性和硫元素杂质含量与分布进行了研究。实验结果表明纳秒脉冲激光制备的单晶硅表面微结构的薄层电阻较小，缺陷密度较低（结晶性高），硫元素杂质含量较高且在表面分布的范围较广，深度较大（约1 m）。此外，材料的可见-近红外波段吸收率可接近80%。基于纳秒脉冲激光微构造的单晶硅的优异性能，在样品表面制备了有效光照面积达8 cm2的太阳能电池。其中，最佳太阳能电池的串联电阻、开路电压、短路电流密度分别为0.5 , 503 mV, 35 mA/cm2，转换效率约12%。上述太阳能电池性能还可通过优化制备工艺进一步提高。     

非晶硅薄膜太阳能电池的紫外激光刻蚀工艺

为提高电池的光电转换效率,通过改善激光刻蚀工艺,采用355 nm紫外纳秒激光分别进行了ZnO:Al薄膜（AZO）刻蚀（P1）、非晶硅薄膜（-Si）刻蚀（P2）和背电极刻蚀（P3）研究。采用万用表测量P1隔离电阻,采用电子扫描显微镜（SEM）和三维激光扫描仪测量刻槽的微结构和三维成像,激光拉曼散射光谱检测非晶硅薄膜刻蚀边缘的晶化。实验结果表明,当刻蚀速度600 mm/s,重复频率40 kHz,功率1.74 W的紫外激光刻蚀ZnO:Al薄膜时,刻槽的隔离效果最佳,达20 M; 紫外激光刻蚀能够有效地减小激光热效应引起的热影响和刻槽边缘的晶化范围,提高非晶硅薄膜电池的性能。     

2 μm掺钬固体激光器研究进展

2 μm掺钬固体激光器的输出波长处在大气窗口和人眼安全区,在激光雷达、激光测距、光电对抗和激光医学等方面都有重要应用,因此在2 μm固体激光器研究领域中成为一个研究热点。本文介绍了2 μm掺钬固体激光器能级系统及常用的掺钬晶体,并对基于这些晶体的钬激光器研究进展进行了综述,最后对2 μm钬固体激光器的未来发展方向等进行展望。     

氢退火的BZO前电极对非晶硅薄膜太阳能电池性能的影响

采用低压化学气相沉积方法在玻璃衬底上制备了B掺杂的ZnO（BZO）薄膜,通过氢退火对BZO进行处理,然后作为前电极进行了非晶硅薄膜太阳能电池的制备及性能研究。结果表明：在氢气气氛下退火后,BZO薄膜的载流子浓度基本无变化,但Hall迁移率显著提高,这使得BZO薄膜的导电能力提高;当采用厚度较小、透光率较高的BZO薄膜进行氢退火后作为前电极结构时,非晶硅薄膜太阳能电池的短路电流密度提高0.3~0.4 mA/cm²,电池的转化效率提高0.2%。实验结果可为通过优化前电极结构来提高非晶硅薄膜太阳能电池转化效率提供一种简易的方法。     

飞秒激光直写PMMA制备微流道的工艺技术研究

针对目前PMMA微流道加工质量差和效率低的问题, 对飞秒激光直写PMMA制备微流道的工艺技术进行了研究。通过实验分析了不同激光参数对微流道的宽度、深度、粗糙度、微流道两侧堆积物火山口高度的影响及变化规律。实验结果表明, 当激光扫描速度为20 mm/s时, 激光功率为0.5 W时, 微流道粗糙度较低且变化幅度不明显; 激光能量从0.5 W增加到0.75 W时, 微流道的宽度、深度与激光能量呈线性关系增加; 激光功率大于0.5 W时, 随着激光功率以及加工次数的增加, 微流道宽度、深度、粗糙度以及堆积物火山口的高度逐渐增加。经过计算得出, PMMA的烧蚀阈值为0.357 J/cm2。通过优化工艺参数, 制备出粗糙度较低、表面光滑、深度为16 μm的微流道芯片。     

钙钛矿材料在激光领域的研究进展

钙钛矿材料具有发光量子产率高、自由载流子、结晶结构完美等优点,首先被提出应用于太阳能电池领域,并在近几年得到快速发展,研究也逐渐向电致发光、激光等领域拓展。本文介绍了钙钛矿材料在激光领域的研究进展,着重从4个部分进行叙述:可调节波长范围宽的钙钛矿激光器、稳定性更好的钙钛矿激光器、具有紫外光以及新波长激光输出潜力的钙钛矿激光器、具有非线性光学特性的钙钛矿激光器。列举了多种钙钛矿材料的制备方法及其光学特性;总结了现有钙钛矿激光器的结构特点以及输出模式;剖析了钙钛矿材料在激光领域广泛应用存在的问题,同时对钙钛矿激光器的发展前景进行了分析。为钙钛矿材料在激光领域的进一步研究提供参考。     

激光烧蚀制备分布反馈式有机激光器件

采用激光烧蚀的方法结合激光全息技术,直接在高分子聚合物MEH-PPV薄膜表面烧蚀光栅结构,制备了分布反馈式有机激光器。这一方法具有工艺简单、光栅参数的可控性和重复性好等优点。器件MEH-PPV的膜厚是400 nm。利用波长为355 nm的Nd-YAG纳秒激光器进行单脉冲烧蚀,获得的光栅周期和光栅高度分别为370 nm和 100 nm。利用飞秒激光放大器作为泵浦源激射DFB激光器件,得到激射阈值约为182 μJ·cm^-2·pulse^-1,光谱的波峰约在609 nm处,半高宽为4.2 nm。通过改变两光束的夹角获得了周期为360, 370, 380, 390 nm的光栅,它们对应的激光波峰分别为602.91, 609.24, 613.26, 619.01 nm。     

空气包层大模场面积掺镱光子晶体光纤研究

采用改进的化学气相沉积法和气相液相混合掺杂技术制备大芯径掺镱石英光纤预制棒, 以此作为有源纤芯制备了纤芯直径约90 μm的掺镱双包层光子晶体光纤, 纤芯组分为镱铝磷共掺.双包层光子晶体光纤的模场面积约1330 μm², 纤芯数值孔径0.065,包层数值孔径0.5.首次实现了国产掺镱光子晶体光纤的高功率高效率激光输出, 1 m长的光子晶体光纤激光器实现102 W 激光输出,斜率效率76%.     

射频CO2激光用于轧辊毛化的实验研究

分析了轧辊材料在温度发生变化时对激光吸收系数的影响和毛化加工时各种工艺参数对毛化点的影响.针对Diamond K-50射频激励CO2激光器对轧辊毛化的实验,分析了激光脉冲宽度、重复频率以及毛化扫描速度等参数对毛化点的大小和椭圆度的影响,其中激光脉冲宽度与毛化点大小成线性关系,在脉宽为50～400μs时,毛化点椭圆短轴直径可达90～260μm,满足所需要的毛化加工要求.     

Precise selective scribing of thin-film solar cells by a picosecond laser

In this paper, precise scribing of thin-film solar cells (CIGS/Mo/Glass) via a picosecond laser is investigated. A parametric study is carried out for P1 and P2 scribing to study the effects of laser fluence and overlap ratio on scribing quality and ablation depth. Three ablation regimes are observed for P1 scribing in different laser fluence ranges, due to the involvement of different ablation mechanisms. The optimum scribing conditions are determined for both P1 and P2 scribing, and the potential processing speed is significantly increased. The heat accumulation effect at different repetition rates is studied to extrapolate the results from low to high repetition rates. A two-temperature model-based model is developed to simulate the scribing process for multiple thin films, providing decent prediction of the slot depth for both P1 and P2 scribing.     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.     

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355 nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis, electrical measurements and confocal profiles. In order to evaluate the damage in the silicon layer, Raman spectroscopy has been used for the last laser process step. Raman spectra gives information about the heat affected zone in the amorphous silicon structure through the crystalline fraction calculation. The use of ultrafast sources, such as picoseconds lasers, coupled with UV wavelength gives the possibility to consider materials and substrates different than currently used, making the process more efficient and easy to implement in production lines. This approach with UV laser sources working from the film side offers no restriction in the choice of materials which make up the devices and the possibility to opt for opaque substrates.     

Theoretical analysis and experimental verification of AZO/i-ZnO/CdS/CIGS multilayer stack isolation using 1064 nm and 355 nm laser wavelengths

This study analyzed the thermal field effect and experimental verification of laser scribing of stainless foil based copper indium gallium selenide solar cells of the AZO/i-ZnO/CdS/CIGS multilayer stack films (P3 layer) using Nd:YAG (1064 nm) and ultraviolet (355 nm) lasers. To prevent breakdown of molybdenum films of the solar cell, the laser processing temperature must be lower than the ablation temperature (2896 °C) of the Mo layer, but higher than the ablation temperature (2248 °C) of aluminum doped zinc oxide layer. Therefore, the scribing depth of the P3 layer is limited to the range 1.5–1.7 μm. First, the ANSYS Parameter Design Language program in the ANSYS finite element software is used to establish the simulation mathematical thermal model of the laser scribing process. To simulate the actual laser scribing process, a three-dimensional FE model for laser scribing process with a moving laser beam was constructed. Comparison the theoretical analysis and experimental results indicated that two sets of simulation parameters could not completely remove the P3 layer when the Nd:YAG laser was used. However, when the UV laser was used, the theoretical and experimental results were in favorable agreement. The findings of this study indicate that simulation analysis results can be helpful as reference data for experimental parameters during the actual scribing process.     

Multi-objective optimization of laser-scribed micro grooves on AZO conductive thin film using Data Envelopment Analysis

Laser scribing process has been considered as an effective approach for surface texturization on thin film solar cell. In this study, a systematic method for optimizing multi-objective process parameters of fiber laser system was proposed to achieve excellent quality characteristics, such as the minimum scribing line width, the flattest trough bottom, and the least processing edge surface bumps for increasing incident light absorption of thin film solar cell. First, the Taguchi method (TM) obtained useful statistical information through the orthogonal array with relatively fewer experiments. However, TM is only appropriate to optimize single-objective problems and has to rely on engineering judgment for solving multi-objective problems that can cause uncertainty to some degree. The back-propagation neural network (BPNN) and data envelopment analysis (DEA) were utilized to estimate the incomplete data and derive the optimal process parameters of laser scribing system. In addition, analysis of variance (ANOVA) method was also applied to identify the significant factors which have the greatest effects on the quality of scribing process; in other words, by putting more emphasis on these controllable and profound factors, the quality characteristics of the scribed thin film could be effectively enhanced. The experiments were carried out on ZnO:Al (AZO) transparent conductive thin film with a thickness of 500 nm and the results proved that the proposed approach yields better anticipated improvements than that of the TM which is only superior in improving one quality while sacrificing the other qualities. The results of confirmation experiments have showed the reliability of the proposed method.     

Novel interconnection scheme for thin‐film silicon solar modules with conductive intermediate reflector

Intermediate reflector layers are commonly used for light man‐agement purposes in multi‐junction silicon based devices containing a‐Si:H top‐ and µc‐Si:H bottom‐sub‐cells. A low resistance of such layers can have a severe impact on the solar module performance due to shunting of the bottom sub‐cell by the P2 scribe. A common solution for this problem is the use of an additional scribe line. However, not only the additional processing step is disadvantageous but also the dead area losses are increased as well by the additional scribe. This work introduces a novel solar cell stripe interconnection scheme that requires only three scribing processes with similar dead area losses as they would be apparent in the standard interconnection scheme. An implementation to mini modules shows no negative impact on the electrical properties and simultaneously reducing the required number of scribing steps. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Optimization of laser patterning of textured gallium-doped zinc oxide for amorphous silicon photovoltaics

Laser scribing process of in-house textured gallium-doped zinc oxide (GZO) is optimized, aiming to improve the performance of amorphous silicon (a-Si:H) photovoltaic (PV) modules. The reasons for different scribing quality of textured GZO and SnO₂:F scribed at 1064 nm with pulse duration of 40 ns were analyzed. Apart from separation resistance, quality of the scribed lines was evaluated by laser scan microscopy from three-dimensional images. Other types of lasers, such as laser with shorter pulse duration, laser at 355 nm and laser with Gaussian-to-tophat converter, were used to smooth the edges and flatten the bottoms of the scribed lines. The proper laser scribing realizes the advantages of textured GZO films used as front contacts in PV modules. A short-circuit current density of 14.3 mA/cm² and an initial aperture area efficiency of 8.8% were obtained on 16 cm × 16 cm textured GZO coated glass scribed at 355 nm with pulse duration of 40 ns.     

Selective patterning and scribing of Ti thin film on glass substrate by 532 nm picosecond laser

In this paper, the feasibility of Ti film coated on glass substrate scribed via a 532 nm picosecond laser is investigated. Laser irradiations from the film side and from the transparent substrate side are performed for comparison. Optical microscopy, SEM, surface stylus and contact resistance measurement reveal that the Ti film can be completely removed with no damage to the glass substrate, using optimized process parameters. The complete removal threshold for the film for front-side scribing is found at 120 mJ/cm², while the minimum laser fluence for complete scribing is 70 mJ/cm² in the case of back-side scribing. The lines scribed from the front side exhibit obvious thermal effects such as heat affected zones, burr and micro cracks. Back-side scribing exhibits non-thermal behavior, which also can increase the process speed for the scribing of a Ti film on glass to 1000 mm/s. This makes the back-side laser scribing of Ti film a promising technique.     

Patterning of CIGS thin films induced by rear-side laser ablation of polyimide carrier foil

Laser patterning of thin films is essential for the future development of flexible electronic devices. The damage-free scribing of thermally sensitive thin films such as copper–indium–gallium diselenide (CIGS) that is required for solar module fabrication by integrated interconnections is still challenging. In this study a new approach for non-thermal, damage-free scribing of CIGS films on polyimide foil is proposed and demonstrated. In contrast to the usually used direct laser ablation of the thin-film stack, laser ablation of the polyimide carrier foil at laser fluences higher than 3 J/cm² is utilized to achieve CIGS film delamination and thus the patterning of the thin film. The edges of the patterned CIGS films do not show typical laser-ablation-induced modifications like melting, debris contamination, or crack formation. The mechanism of the thin-film removal is of non-thermal origin and is probably due to stress formation at the CIGS/Mo interface resulting from secondary processes of polyimide laser ablation like shock-wave formation or local sample deformation.     

Analysis of laser scribes at CIGS thin-film solar cells by localized electrical and optical measurements

Laser patterning of thin-film solar cells is essential to perform external serial and integrated monolithic interconnections for module application and has recently received increasing attention. Current investigations show, however, that the efficiency of thin-film Cu(In,Ga)Se₂ (CIGS) modules is reduced due to laser scribing also with ultrashort laser pulses. Hence, to investigate the reasons of the laser-induced material modifications, thin-film CIGS solar cells were laser-scribed with femto- and picosecond laser pulses using different scribing procedures and laser processing parameters. Besides standard electrical current voltage (I–V) measurements, additional electrical and optical analysis were performed such as laser beam-induced current (LBIC), dark lock-in thermography (DLIT), and electroluminescence (EL) measurements to characterize and localize electrical losses due to material removal/modifications at the scribes that effecting the electrical solar cell properties. Both localized as well as distributed shunts were found at laser scribe edges whereas the laser spot intensity distribution affecting the shunt formation. Already laser irradiation below the ablation threshold of the TCO film causes material modification inside the thin film solar cell stack resulting in shunt formation as a result of materials melting near the TCO/CIGS interface that probably induces the damage of the pn-junction.