| 非晶硅薄膜太阳能电池的紫外激光刻蚀工艺 |
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| 引用本文： | 张超,张庆茂,郭亮,吕启涛,吴煜文.非晶硅薄膜太阳能电池的紫外激光刻蚀工艺[J].强激光与粒子束,2012,24(11):2751-2756. |
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| 作者姓名： | 张超 张庆茂 郭亮 吕启涛 吴煜文 |
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| 作者单位： | 1.华南师范大学 广东省微纳光子功能材料与器件重点实验室, 广州 51 0006; |
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| 基金项目： | 中央财政支持地方高校专项资金项目(510-C10293)；粤港关键技术招标东莞专项(20092052060010)；广东省教育部产学研结合重点项目(2010A090200048)； 广东省教育厅学科建设专项(C10360) |
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| 摘 要： | 为提高电池的光电转换效率，通过改善激光刻蚀工艺，采用355 nm紫外纳秒激光分别进行了ZnO:Al薄膜（AZO）刻蚀（P1）、非晶硅薄膜（-Si）刻蚀（P2）和背电极刻蚀（P3）研究。采用万用表测量P1隔离电阻，采用电子扫描显微镜（SEM）和三维激光扫描仪测量刻槽的微结构和三维成像，激光拉曼散射光谱检测非晶硅薄膜刻蚀边缘的晶化。实验结果表明，当刻蚀速度600 mm/s，重复频率40 kHz，功率1.74 W的紫外激光刻蚀ZnO:Al薄膜时，刻槽的隔离效果最佳，达20 M; 紫外激光刻蚀能够有效地减小激光热效应引起的热影响和刻槽边缘的晶化范围，提高非晶硅薄膜电池的性能。
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| 关 键 词： | 激光刻蚀 非晶硅薄膜 热效应 隔离电阻 晶化 |
| 收稿时间： | 2011/11/3 |
Ablating process with 355 nm laser for amorphous silicon thin-film solar cell |
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| Zhang Chao
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Zhang Qingmao
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Guo Liang
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Lü Qitao
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Wu Yuwen.Ablating process with 355 nm laser for amorphous silicon thin-film solar cell[J].High Power Laser and Particle Beams,2012,24(11):2751-2756. |
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| Authors: | Zhang Chao Zhang Qingmao Guo Liang Lü Qitao Wu Yuwen |
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| Affiliation: | 1.Laboratory of Nanophotonic Functional Materials and Devices,South China Normal University,Guangzhou 510006,China;2.School of Physics and Optoelectric Engineering,Guangdong University of Technology,Guangzhou 510006,China;3.School of Mechanical and Automotive Engineering,South China University of Technology,Guangzhou 510641,China;4.Han’s Laser Technology Co Ltd,Shenzhen 518000,China |
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| Abstract: | In order to improve the efficiency of solar cell, we make some changes of laser ablation. This study focuses on using 355 nm laser with nanosecond pulse duration to ablate ZnO:Al (P1), α-Si (P2), and back contact (P3) selectively. Isolation resistances are measured by multimeter. Scanning electron microscope and 3D laser scan microscope are used to measure ablation grooves’ microstructure and 3D images. Laser Raman spectroscopy is employed to detect the crystallization of α-Si in the edge of ablation. The experimental results show that the effect of groove ablated by 355 nm laser whose isolation resistance reaches up to 20 MΩ is best when a 600 mm/s, 40 kHz, 1.74 W laser works on its focal position, and the ablation with 355 nm laser can effectively decrease the influence caused by laser heating effect and the crystallization area of α-Si in the edge of ablation. |
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| Keywords: | laser ablation thin-film amorphous silicon heating effect isolation resistance crystallization |
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