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1.
用磁过滤脉冲真空电弧沉积方法制备了CoPt(FePt) C纳米复合薄膜,并在不同温度下进行了退火处理,研究了薄膜中碳的含量以及退火温度对薄膜结构与磁性能的影响.制备态薄膜经过足够高的温度退火后,x射线衍射和磁力显微镜分析发现,在碳基质中生成了面心四方相的CoPt(FePt)纳米颗粒.对于特定组分为Co24Pt31C45和Fe43Pt35C22的薄膜,矫顽力以及颗粒尺寸都随退火温度的升高而增大,当退火温度为700℃时,Co24Pt31C45薄膜的矫顽力为21×105A/m,晶粒尺寸为17nm;当退火温度为650℃时,Fe43Pt35C22相应值分别为28×105A/m和105nm. 关键词: 磁记录材料 磁性薄膜 CoPt FePt纳米复合薄膜  相似文献   

2.
采用溶胶-凝胶工艺在玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.2,0.3,0.4,0.5,0.6,0.7)薄膜.X射线衍射谱(XRD)测试结果发现,在0.1相似文献   

3.
采用直流磁控溅射的方法制备了一系列(CoPt/Ag)n多层膜,然后在不同温度下 进行了退火处理,并对其结构和磁性做了初步的表征,研究了Ag的含量以及薄膜中每一单元 厚度与总厚度对退火后薄膜的结构以及磁性能的影响.结果表明,膜厚较薄时(大约20 nm)有 利于薄膜沿(001)取向生长,Ag的加入不但能够抑制CoPt晶粒的过分长大还可以诱导薄膜的( 001)取向,使退火后的薄膜在垂直于膜面方向上的矫顽力大大增强.对于特定组分为Co 40Pt43Ag17的薄膜,经600℃退火后已经显示了明显的(001) 取向,垂直于膜面方向上的矫顽力为5.6×105 A/m,饱和磁化强度为0.65T, 并 且磁滞回线具有很好的矩形度,剩磁比(s)为0.95. 关键词: 磁记录材料 磁性薄膜 CoPt/Ag纳米复合膜  相似文献   

4.
杨祥  徐兵  周畅  张建华  李喜峰 《发光学报》2019,40(2):209-214
通过溶液法制备了新型有源层钨锌锡氧化物(WZTO)薄膜晶体管(TFT),研究了不同退火温度对WZTO薄膜和TFT器件性能的影响。XRD结果表明即使退火温度达到500℃,WZTO薄膜仍为非晶态结构。W掺杂显著降低了薄膜表面粗糙度,其粗糙度均从0. 9 nm降低到0. 5 nm以下;但不影响薄膜可见光透过率,其透过率均大于85%。同时XPS分析证实随退火温度升高,WZTO薄膜中对应氧空位的峰增加。制备的WZTO器件阈值电压由8. 04 V降至3. 48 V,载流子迁移率随着退火温度的升高而增大,开关电流比达到107。  相似文献   

5.
以共溅射法制备的Cu-In预制膜为衬底材料,以硒粉为原料,尝试了几种特殊的硒化方案,包括单源硒化法、双源硒化法、表面喷粉硒化法、分步硒化退火和同步硒化退火等5种具有代表性和创新性的方案,研究了硒源的摆放方式、升温方法对薄膜质量的影响,比较了不同方法制备的CuInSe2(CIS)薄膜在形貌、成分、相结构等方面的异同.系统地分析了硒化温度、退火温度和退火时间对CuInSe2薄膜成分的影响,研究了各元素的百分含量随硒化退火条件的变化规律,为更准确地把握CIS薄膜的成分和相结构提供有益的借鉴.  相似文献   

6.
李健  朱洁 《物理学报》2007,56(1):574-582
以共溅射法制备的Cu-In预制膜为衬底材料,以硒粉为原料,尝试了几种特殊的硒化方案,包括单源硒化法、双源硒化法、表面喷粉硒化法、分步硒化退火和同步硒化退火等5种具有代表性和创新性的方案,研究了硒源的摆放方式、升温方法对薄膜质量的影响,比较了不同方法制备的CuInSe2(CIS)薄膜在形貌、成分、相结构等方面的异同. 系统地分析了硒化温度、退火温度和退火时间对CuInSe2薄膜成分的影响,研究了各元素的百分含量随硒化退火条件的变化规律,为更准确地把握CIS薄膜的成分和相结构提供有益的借鉴.  相似文献   

7.
采用溶胶-凝胶工艺在玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.2,0.3, 0.4,0.5,0.6,0.7)薄膜.X射线衍射谱(XRD)测试结果发现,在 0.1<x<0.3 范围内,薄膜仍然保持氧化锌六角纤锌矿结构,(002)面衍射峰位向大角度方向移动,超过0.3时出现氧化镁立方相.对镁含量为0.1,0.2,0.3薄膜的光致发光谱研究表明:紫外发光峰随镁含量的增加向短波方向移动.对于Zn0.9Mg0.1O薄膜,在5,5.5和6℃/min的升温速率下,升温速率越快结晶程度越好.在相同升温速率下,随着退火温度从500 ℃升高到560 ℃,样品的结晶程度变好,当退火温度达到590 ℃时,结晶质量下降. 关键词: 氧化锌 结构 禁带宽度 光致发光谱  相似文献   

8.
薛双喜  王浩  S.P.Wong 《物理学报》2007,56(6):3533-3538
采用磁控溅射(Ag/Cu/CoPt)n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜,通过优化薄膜中Ag以及Cu的含量,成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜,该膜在450℃退火即可发生相变,该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明,薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向,Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co40Pt36Cu8Ag16的薄膜,经500℃退火后已经显示了明显的(001)取向,垂直于膜面方向上的矫顽力为5.0×105A/m,并且薄膜中晶粒尺寸仅为4—5nm,为将来CoPt-L10有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词: 磁记录材料 CoPt 纳米复合膜  相似文献   

9.
退火对TiO2薄膜形貌、结构及光学特性影响   总被引:1,自引:0,他引:1  
利用射频磁控溅射技术在熔融石英基片上制备TiO<,2>薄膜,采用X射线衍射、扫描电子显微镜(SEM)、拉曼光谱以及透过谱研究了退火温度和退火气氛对TiO<,2>薄膜的结构、形貌和光学特性的影响.实验结果表明:在大气环境下退火,退火温度越.高,薄膜晶化越好,晶粒明显长大,温度高于700℃退火的薄膜,金红石相已明显形成.实验还发现,退火气氛对金红石相的形成是非常重要的,拉曼光谱反应出Ar气氛退火,抑制了金红石晶相的发育,薄膜仍以锐钛矿相为主.Ar气氛退火的薄膜在可见光范围内的透过率比大气退火的要低,并且由透过率曲线推知:金红石的光学带隙约为2.8 eV,比锐钛矿的光学带隙小0.2 eV.  相似文献   

10.
杨鑫鑫  魏晓旭  王军转  施毅  郑有炓 《物理学报》2013,62(22):227201-227201
过渡金属氧化物二氧化钒(VO2)在温度340 K附近会发生金属绝缘体的转变(metal-insulator transition, MIT). 基于金属绝缘体的转变性质, VO2薄膜材料具有很好的应用前景. 本文首先采用脉冲激光沉积制备了高质量的V2O5薄膜, 再通过高温氢退火还原V2O5薄膜制备出VO2多晶薄膜. 研究了不同的退火温度、退火时间、退火气氛对VO2薄膜制备的影响, 采用X射线衍射、X射线光电子能谱、变温电阻特性测量等手段对样品进行分析, 发现在H2(5%)/Ar退火气氛下, 在一定的退火温度范围内(500–525 ℃), 退火 3 h, 得到了B相和M相共存的VO2薄膜, 具有M相的VO2的MIT特性, 而相同退火温度下退火时间达到4.5 h, 薄膜完全变成B相的VO2. 通过纯Ar气氛下对B相VO2再退火, 得到了转变温度为350 K, 电阻突变接近4个数量级的M相的VO2薄膜. 实现了VO2的B相和M相的相互转变. 关键词: 2薄膜')" href="#">VO2薄膜 金属绝缘体转变 氢退火  相似文献   

11.
CoPt-TiO2 nanocomposite films were synthesized by rapid thermal annealing of CoPt/TiO2 multilayers. The effects of annealing temperature, annealing time, Ag addition and TiO2 volume fraction on the microstructures and magnetic properties of the CoPt-TiO2 nanocomposite films were studied. Results showed that the ordering degree of CoPt and coercivity of CoPt-TiO2 nanocomposites increased with annealing temperature. Increasing annealing time and Ag addition were able to increase the ordering degree and coercivity of CoPt. However, complete L10-ordering of CoPt at 550 °C annealing was not realized by increasing annealing time up to 30 min and Ag addition up to 30 vol.%. Increasing TiO2 volume fraction at 700 °C annealing did not lead to the change of ordering of CoPt. However, the grain structure of the films changed slightly when TiO2 volume fraction was larger than 56%. The coercivity of the film decreased slightly with the addition of TiO2.  相似文献   

12.
The effect of magnetic field annealing of magnetron sputtered CoPt alloy films and Co/Pt bilayers on the crystallographic texture of the obtained chemically ordered (L10) CoPt films is presented. In CoPt alloy films the main effect of the magnetic field is to suppress (1 1 1) growth in the early stages of L10 formation whereas the development of (0 0 1) versus (1 0 0) texture is related to chemical ordering strain. A higher degree of (0 0 1) texture is obtained by magnetically annealing Co/Pt bilayers since the initial (1 1 1) texture in the as-sputtered films is avoided and Co-Pt alloying occurs in the presence of the magnetic field.  相似文献   

13.
The effects of layer thickness and thermal annealing on Curie temperature have been studied for CoPt ultrathin continuous layers in AlN/CoPt multilayer structures. It is found that there exists a critical thickness below which Curie temperature rapidly decreases due to the loss of spin-spin interactions in the vicinity of interface. After high temperature annealing, the in-plane lattice constant of CoPt film is increased and the exchange coupling parameter is decreased. Consequently, Curie temperatures decrease for some films with large thickness, compared with as-deposited state. Upon annealing at 600?°C, CoPt undergoes ordering transformation, which also contributes to the degradation of the Curie temperature. However, when the CoPt film thickness is below 2?nm, the Curie temperature is increased after annealing. Especially for 1?nm thick film, the Curie temperature is strikingly increased from 173?°C to 343?°C after annealing at 600?°C. This effect is attributed to the out-of-plane lattice deformation of CoPt thin layers in AlN/CoPt multilayer structures.  相似文献   

14.
Nanocomposite (001) textured CoPtCu:Ag films consisting of well separated L10 structure CoPtCu nanoparticles have been prepared using a CoPt/Cu/Ag multilayer precursor on SiO2/Si(100) substrate by magnetron sputtering and subsequent vacuum thermal annealing. With a Cu concentration of 6–10% and Ag of 10–20% in atomic ratio, the films start ordering at an annealing temperature of 450 °C, which is roughly lower by 150 °C than that needed for most CoPt-based films especially with (001) texture. The perpendicular coercivities for the film are in the range from 5 kOe to 7 kOe after annealing at 500 °C in vacuum. The (001) texture for the film is partially due to the formation of an Ag underlayer after annealing, the decreasing of the ordering temperature is most-likely related to the formation of CoPtCu alloy nanoparticles in the film. PACS 75.30.Gw; 75.50.Kj; 75.70.Ak  相似文献   

15.
《Current Applied Physics》2018,18(2):241-245
This work investigated the effects of heating rate and annealing on the magneto-optical properties of bismuth-substituted yttrium iron garnet (Bi-YIG) thin films on glass and (111)-oriented single-crystalline gadolinium gallium garnet (GGG) substrates fabricated by metal-organic decomposition (MOD). We modified the MOD method by eliminating the pre-annealing process. We performed annealing at various temperatures to determine the optimal temperature for obtaining the Bi-YIG phase. We then annealed at the optimized temperature using various heating rates. The optimal conditions were annealing for 1 h at 750 °C at a heating rate of 30 °C/min on GGG to obtain highly crystallized fine grains. The Faraday rotation for this film was about −10.5°/μm. The optimized heating rate enhanced the magneto-optical properties due to improved crystallinity and saturated magnetization. The Bi-YIG thin films prepared by this prescribed MOD method exhibited excellent magneto-optical performance and are potential candidates for applications in optical devices.  相似文献   

16.
The L10 CoPt films with (0 0 1) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600° C for 30 min. The preferred orientation of [ZrO2/CoPt]n/Ag films dependence of the Ag underlayer thickness, ZrO2 and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L10 CoPt (0 0 1) texture are obtained in the [ZrO2 (3 nm)/CoPt (5 nm)]3/Ag (10 nm) film. The existence of ZrO2 plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.  相似文献   

17.
采用两种单体同时蒸发沉积聚合方法制备得到聚酰亚胺(PI)薄膜。对不同温度下和不同恒温时间的聚酰胺酸(PAA)薄膜进行了红外分析,将300 ℃恒温3 h以上的薄膜脱膜,用白光干涉仪测量了PI薄膜热环化前后表面质量。采用热重分析仪在不同升温速率条件下对薄膜进行了分析。结果表明,在热环化过程中,随着温度增加亚胺化程度逐渐增加。在300 ℃时随着恒温时间增加亚胺化程度逐渐增加,恒温3 h以上薄膜亚胺化较为完全,可以获得完整且不易破损的自支撑薄膜。在热环化过程中,升温速率较低时薄膜的亚胺化程度在低温区转化率提高,过量单体蒸发更完全,故一般选择较小的升温速率,约10 ℃/min甚至更低。采用上述热环化工艺得到了亚胺化程度较高且不易破损的PI薄膜,其表面均方根粗糙度为9.8 nm。  相似文献   

18.
In this work, the magnetic and microstructural properties of CoPt nanowires are presented as a function of the electrolyte pH and current density during electrodeposition into anodized alumina templates. CoPt nanowires of high aspect ratio have been prepared using electrolyte pH values in the range from 2 to 6. The as-made samples exhibit a face centered cubic (fcc) structure with soft magnetic properties which transform into the face centered tetragonal (fct) L10 phase after thermal treatment. Different pH values of the electrolyte during electrodeposition lead to significantly different microstructures and, therefore, different magnetic properties. The CoPt nanowires prepared at high pH value are composed of fcc nanorods of about 25 nm in length. Thermal annealing of these samples leads to a preferred (0 0 1) orientation (along the direction perpendicular to the direction of nanowires) which increases with annealing time. On the other hand, the CoPt nanowires prepared at lower pH value are composed of uniform fcc nanograins with the size ∼2−3 nm. Magnetization curves for the later sample are virtually identical in both directions indicating an isotropic behavior.  相似文献   

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