具有室温巨隧道磁电阻效应与高自旋极化率的新材料

回顾了隧道磁电阻效应发展简史及其应用,报道了锌铁氧体/氧化铁二相纳米复合材料在室温具有巨磁隧道电阻效应的实验结果,该实验结果表明锌铁氧体是具有高自旋极化率的一类新材料,值得进一步开展相关的研究工作.     

纳米结构ZnxFe3-xO4-α-Fe2O3多晶材料中的巨隧道磁电阻效应

在具有纳米绝缘层的多晶锌铁氧体体系中,当晶界为α-Fe₂O₃纳米量级(6—7nm)的绝缘层时,则构成(Zn_xFe_3-xO₄)-α-Fe₂O₃非均匀体,高分辨电子显微镜已证实了这种微结构,该体系在0.5T磁场、4.2K温度下,磁电阻效应可达1280%,300℃下为158%. 关键词： 隧道磁电阻效应 锌铁氧体 纳米结构     

纳米结构Zn_xFe_(3-x)O_4-α-Fe_2O_3多晶材料中的巨隧道磁电阻效应

在具有纳米绝缘层的多晶锌铁氧体体系中 ,当晶界为α Fe2 O3纳米量级 ( 6— 7nm)的绝缘层时 ,则构成 (ZnxFe3-xO4 ) α Fe2 O3非均匀体 ,高分辨电子显微镜已证实了这种微结构 ,该体系在 0 .5T磁场、4 .2K温度下 ,磁电阻效应可达12 80 % ,3 0 0℃下为 15 8% .     

磁电子学讲座 第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史．综述了自旋极化电子隧穿效应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结（简称ＦＭ／Ｉ／ＦＭ隧道结）中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展．     

第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史，综述了自旋极化电子隧穿产应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展。     

多晶La0.7Sr0.3MnO3的低温输运性质和磁电阻效应

详细研究了由纳米晶粒组成的块体多晶La0.7Sr0.3MnO3(LSM)的电阻率和磁电阻效应,以及它们的温度依赖性.随着温度从室温降低,电阻率(ρ)在250K附近存在一最大值,低于该温度后,样品表现为金属导电特性,随后在50K附近存在一极小值.也就是说在低于50K的温度范围内,随着温度降低ρ反而升高,表现为绝缘体性的导电特性.经研究发现,这种随温度降低ρ反而增加的现象与隧穿效应的理论模型(lnρ∝T-1/2)符合得很好.这种现象是由于传导电子在通过邻近LSM晶粒间表面/界面层时的隧道效应所导致的.这种低温下电阻率的极小值现象来源于隧穿效应和LSM晶粒本征的金属导电特性的相互竞争.还详细研究了相应的隧道磁电阻效应的温度依赖性.     

新型的氧化物磁制冷工质与隧道磁电阻材料--2004年度国家自然科学二等奖获奖项目介绍

文章介绍了2004年度国家自然科学二等奖获奖成果[21].类钙钛矿型材料是一类物理内涵极其丰富的化合物,它是著名的高温超导材料、铁电材料、压电材料,又是庞磁电阻效应材料,目前又显示出具有大磁熵变效应与隧道磁电阻效应.文章作者系统地研究了锰钙钛矿磁性化合物的磁熵变与组成、微结构以及颗粒尺寸的关系,研究结果表明,磁性钙钛矿化合物具有显著的磁熵变,居里温度易调,并且化学稳定性佳,从而成为一类新型的磁制冷工质候选材料.此外,文章作者还研究了钙钛矿化合物纳米颗粒体系的磁电阻效应,发现除人们发现的居里温度附近的本征的庞磁电阻效应外,在很宽的低温区,存在与温度不甚敏感的隧道磁电阻效应.     

多晶La0.7Sr0.3MnO3的低温输运性质和磁电阻效应

详细研究了由纳米晶粒组成的块体多晶La_0.7Sr_0.3MnO₃(LSM)的电阻率和磁电阻效应,以及它们的温度依赖性.随着温度从室温降低,电阻率(ρ)在250K附近存在一最大值,低于该温度后,样品表现为金属导电特性,随后在50K附近存在一极小值.也就是说在低于50K的温度范围内,随着温度降低ρ反而升高,表现为绝缘体性的导电特性.经研究发现,这种随温度降低ρ反而增加的现象与隧穿效应的理论模型(lnρ∝T^-1/2)符合得很好 关键词： 0.7Sr_0.3MnO₃')" href="#">多晶La_0.7Sr_0.3MnO₃ 隧道效应 隧道磁电阻效应     

纳米多晶La0.7Sr0.3MnO3－δ的输运性质和磁电阻效应研究

利用溶胶-凝胶法制备了纳米多晶La_0.7Sr_0.3MnO_3-δ(LSM)块体样品.详细研究了在不同烧结温度下的LSM样品电阻率随测量温度的变化关系和磁电阻效应.随着测量温度从室温降低,电阻率ρ都在250K附近存在最大值,低于该温度后,样品表现为金属导电特性,随后在50K左右存在一极小值.即随着温度从50K左右降低到4.2K,ρ反而逐渐升高,表现为绝缘体性的导电特性.研究表明,在低温下(<50K),ρ随温度降低而升高的现象与隧穿效应的理论模型(lnρ∝T^1/2)符合得很好,表明这种现象是由于传导电子在通过邻近LSM晶粒间表面/界面层时的隧道效应所致.而在50—250K的温度范围内,其电阻率与T²成正比,表现为LSM本征的金属导电特性.因此这种低温下电阻率的极小值现象来源于隧穿效应和LSM晶粒本征的金属导电特性的相互竞争.本文还详细研究了相应的隧道磁电阻效应. 关键词： 0.7Sr_0.3MnO_3-δ')" href="#">多晶La_0.7Sr_0.3MnO_3-δ 隧道效应 隧道磁电阻效应     

磁电阻效应的研究进展

介绍了磁电阻效应的研究状况和进展,总结了铁磁金属的磁电阻效应、磁性多层膜和颗粒膜的巨磁阻效应、磁隧道电阻效应及氧化物铁磁体的超大磁阻效应的理论模型,并简要分析了磁电阻效应的物理机制。     

Magnetoresistance in silicon based ferrite magnetic tunnel junction

We report magnetoresistance for silicon based magnetic tunnel junction. We used cobalt ferrite & cobalt nickel ferrite as free layer and pinned layer. The magnetoresistance measured at room temperature through silicon by fabricating FM/Si/FM magnetic tunnel junction. Magnetoresistance shows a loop type behavior with 3.7%. We have successfully demonstrated spin tunneling through silicon with ferrite junction that opens the door for potential candidate for spintronics devices. The spin-filtering effect for this double spin-filter junction is also discussed.     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device

In this research, we have studied the effect of inelastic electron-phonon interactions on current-voltage characteristic and tunneling magnetoresistance of a polythiophene molecule that is sandwiched between two cobalt electrodes using modified Green's function method as proposed by Walczak. The molecule is described with a modified Su-Schrieffer-Heeger Hamiltonian. The ground state of the molecule is obtained by Hellman-Feynman theorem. Electrodes are described in the wide-band approximation and spin-flip is neglected during conduction. Our calculation results show that with increase in voltage the currents increase and tunneling magnetoresistance decreases. Change in tunneling magnetoresistance due to inelastic interactions is limited in a small bias voltage interval and can be neglected in the other bias voltages.     

自旋场效应晶体管中隧道磁阻的势垒相关反转效应

考虑自旋场效应晶体管中Rashba自旋轨道相互作用和自旋输运量子相干性,研究了势垒强度对自旋场效应晶体管的自旋相关量子输运的影响. 研究发现,势垒强度较低时,隧道结电导随Rashba自旋轨道相互作用强度的变化呈现明显的振荡现象,势垒强度较高时,电导表现出明显的势垒相关“电导开关”现象. 当势垒强度逐渐增强时,平行结构电导呈现出单调下降趋势,而反平行结构电导产生波动,这种波动导致该隧道磁阻也随势垒强度的变化表现出振荡现象,且在合适的准一维电子气厚度情况下隧道磁阻值可以产生正负反转,这个效应将会在基于自旋的电子器件信息的存储上获得应用. 关键词： 自旋场效应管 开关效应 量子相干 隧道磁阻     

Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.     

Qualitative analysis of spin-dependent tunneling in a ferromagnetic metal-insulator-ferromagnetic metal junction

A qualitative analysis of spin-dependent tunneling in ferromagnetic metal-insulator-ferromagnetic metal junctions is performed using the WKB approximation and a parabolic band model. It is shown that, as distinct from other tunneling characteristics, only electrons moving at large angles in the plane of the tunnel barrier contribute to the magnetoresistance. The cause of the rapid decrease in the junction magnetoresistance upon applying a bias voltage across the junction is ascertained. It is shown that this cause is attributed to the mirror character of tunneling and remains valid within the framework of more complicated models.     

Resonant inversion of tunneling magnetoresistance

Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.     

Electron transport in granular amorphous silicon dioxide films with ferromagnetic nanoparticles placed in a magnetic field

Electron transport in amorphous silicon dioxide films with embedded nanoparticles (Co, Nb, Ta) was studied. The mean number of localized states in the interparticle tunneling channel was derived from the temperature dependence of conductivity for various grain concentrations under the assumption of the electron transport being governed by resonance tunneling in a chain of localized states between grains. To confirm the assumption of the inelastic character of tunneling, the dependences of the magnetoresistance on grain concentration, temperature, and magnetic field were studied. Accepting the single-orbital model, where the intergrain tunneling magnetoresistance is determined by s-s tunneling, it was found that the existence of weakly split localized states in the tunneling channel results in a lack of magnetoresistance saturation in strong magnetic fields. The combined effect of a decrease in the s-s tunneling coefficient and of growth in the probability of inelastic electron spin scattering with increasing length of the chain of localized states between particles in which the electron is tunneling accounts for the characteristic temperature-concentration dependences of the magnetoresistance. The experimental observation of these features provides an argument for the electron transport in a-SiO₂(Co,Nb,Ta) structures being governed by inelastic resonance tunneling through intergrain localized states.     

Resonant enhancement of tunneling magnetoresistance in double-barrier magnetic heterostructures

We show that spin-dependent resonant tunneling can dramatically enhance tunneling magnetoresistance. We consider double-barrier structures comprising a semiconductor quantum well between two insulating barriers and two ferromagnetic electrodes. By tuning the width of the quantum well, the lowest resonant level can be moved into the energy interval where the density of states for minority spins is zero. This leads to a great enhancement of the magnetoresistance, which exhibits a strong maximum as a function of the quantum well width. We demonstrate that magnetoresistance exceeding 800% is achievable in GaMnAs/AlAs/GaAs/AlAs/GaMnAs double-barrier structures.